Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM300HA-HB
HIGH POWER SWITCHING USE
INSULATED TYPE
QM300HA-HB
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
APPLICATION
AC motor controllers, UPS, CVCF, Inverters, DC motor controllers, NC equipment, Welders
108MAX.
93
0.3
4
6.5
BX
B
9
16
E
C
13
21
29
20
20
48
0.3
62MAX.
36
MAX.
41.5
MAX.
25.5
MAX.
2M6
2M4
LABEL
B
C
E
BX
I
C
Collector current ........................ 300A
V
CEX
Collector-emitter voltage ........... 600V
h
FE
DC current gain............................. 750
Insulated Type
UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM300HA-HB
HIGH POWER SWITCHING USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS
(Tj=25
C, unless otherwise noted)
Symbol
V
CEX (SUS)
V
CEX
V
CBO
V
EBO
I
C
I
C
P
C
I
B
I
CSM
T
j
T
stg
V
iso
--
--
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Collector reverse current
Collector dissipation
Base current
Surge collector reverse current
(forward diode current)
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
Conditions
I
C
=1A, V
EB
=2V
V
EB
=2V
Emitter open
Collector open
DC
DC (forward diode current)
T
C
=25
C
DC
Peak value of one cycle of 60Hz (half wave)
Charged part to case, AC for 1 minute
Main terminal screw M6
mounting screw M6
B(E) terminal screw M4
BX terminal screw M4
Typical value
Ratings
600
600
600
7
300
300
1560
18
3000
40~+150
40~+125
2500
1.96~2.94
20~30
1.96~2.94
20~30
0.98~1.47
10~15
0.98~1.47
10~15
470
Unit
V
V
V
V
A
A
W
A
A
C
C
V
Nm
kgcm
Nm
kgcm
Nm
kgcm
Nm
kgcm
g
ELECTRICAL CHARACTERISTICS
(Tj=25
C, unless otherwise noted)
Unit
mA
mA
mA
V
V
V
--
s
s
s
C/ W
C/ W
C/ W
Limits
Min.
--
--
--
--
--
--
750
--
--
--
--
--
--
Symbol
I
CEX
I
CBO
I
EBO
V
CE (sat)
V
BE (sat)
V
CEO
h
FE
t
on
t
s
t
f
R
th (j-c) Q
R
th (j-c) R
R
th (c-f)
Parameter
Collector cutoff current
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-emitter reverse voltage
DC current gain
Switching time
Thermal resistance
(junction to case)
Contact thermal resistance
(case to fin)
Test conditions
V
CE
=600V, V
EB
=2V
V
CB
=600V,Emitter open
V
EB
=7V, Collector open
I
C
=300A, I
B
=400mA
I
C
=300A (diode forward voltage)
I
C
=300A, V
CE
=2.5V
V
CC
=300V, I
C
=300A, I
B1
=600mA, I
B2
=6.0A
Transistor part
Diode part
Conductive grease applied
Typ.
--
--
--
--
--
--
--
--
--
--
--
--
--
Max.
4.0
4.0
300
2.5
3.0
1.8
--
2.5
10
2.0
0.09
0.3
0.04
Feb.1999
PERFORMANCE CURVES
COMMON EMITTER OUTPUT
CHARACTERISTICS (TYPICAL)
COMMON EMITTER INPUT
CHARACTERISTIC (TYPICAL)
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION
VOLTAGE (TYPICAL)
SWITCHING TIME VS. COLLECTOR
CURRENT (TYPICAL)
DC CURRENT GAIN VS.
COLLECTOR CURRENT (TYPICAL)
COLLECTOR CURRENT
I
C
(A)
DC CURRENT GAIN
h
FE
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(A)
BASE CURRENT
I
B
(A)
COLLECTOR-EMITTER SA
TURA
TION
VOL
T
AGE
V
CE
(sat)
(V)
SA
TURA
TION VOL
T
AGE
V
CE (sat)
, V
BE (sat)
(V)
SWITCHING TIME
t
on
, t
s
, t
f
(
s)
COLLECTOR CURRENT
I
C
(A)
BASE-EMITTER VOLTAGE
V
BE
(V)
BASE CURRENT
I
B
(A)
COLLECTOR CURRENT
I
C
(A)
MITSUBISHI TRANSISTOR MODULES
QM300HA-HB
HIGH POWER SWITCHING USE
INSULATED TYPE
2
10
1
10
0
10
1
10
1
10
0
10
7
5
4
3
2
1
10
7
5
4
3
2
1.6
2.0
2.4
2.8
3.2
3.6
V
CE
=2.5V
T
j
=25C
1000
800
600
400
200
0
0
1
2
3
4
5
T
j
=25C
I
B
=800mA
I
B
=1.6A
I
B
=200mA
I
B
=400mA
I
B
=100mA
4
10
7
5
4
3
2
3
10
7
5
4
3
2
2
10
1
10
2 3 4 5 7
2
10
2 3 4 5 7
3
10
V
CE
=2.5V
T
j
=25C
T
j
=125C
1
10
7
5
4
3
2
0
10
7
5
4
3
2
1
10
1
10
2 3 4 5 7
2
10
2 3 4 5 7
3
10
V
CE(sat)
V
BE(sat)
T
j
=25C
T
j
=125C
I
B
=400mA
0
7
5
3
2
7
5
3
2
7
5
3
2
5
4
3
2
1
I
C
=100A
T
j
=25C
T
j
=125C
I
C
=300A
I
C
=500A
1
10
7
5
4
3
2
0
10
7
5
4
3
2
1
10
1
10
2 3 4 5 7
2
10
2 3 4 5 7
3
10
t
f
t
on
t
s
I
B2
=6.0A
T
j
=25C
T
j
=125C
V
CC
=300V
I
B1
=0.6A
Feb.1999
SWITCHING TIME VS. BASE
CURRENT (TYPICAL)
REVERSE BIAS SAFE OPERATING AREA
SWITCHING TIME
t
s
, t
f
(
s)
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
BASE REVERSE CURRENT
I
B2
(A)
FORWARD BIAS SAFE OPERATING AREA
DERATING FACTOR OF F. B. S. O. A.
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
CASE TEMPERATURE
T
C
(
C)
REVERSE COLLECTOR CURRENT VS.
COLLECTOR-EMITTER REVERSE
VOLTAGE (DIODE FORWARD
CHARACTERISTICS) (TYPICAL)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (TRANSISTOR)
COLLECTOR-EMITTER REVERSE VOLTAGE
V
CEO
(V)
TIME (s)
COLLECTOR CURRENT
I
C
(A)
COLLECTOR CURRENT
I
C
(A)
DERA
TING F
ACTOR (%)
COLLECTOR REVERSE CURRENT
I
C
(A)
MITSUBISHI TRANSISTOR MODULES
QM300HA-HB
HIGH POWER SWITCHING USE
INSULATED TYPE
Z
th (jc)
(
C/ W)
0
10
1
10
0
10
1
10
2
10
3
10
3
10
2
10
1
10
0
10
0
10
1
10
2
10
3
10
1
10
2
10
1
10
0
10
t
f
7
5
3
2
7
5
3
2
7
5
3
2
0
10
2 3
5 7
1
10
2 3
5 7
2
10
T
j
=25C
T
j
=125C
V
CC
=300V
I
C
=300A
t
s
I
B1
=0.6A
600
0
0
100
600
300
500
500
400
200
100
T
j
=125C
I
B2
=6A
200
300
400
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
T
C
=25C
t
w
=20
S
100
S
500
S
10m
S
DC
1m
S
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
0.1
0.08
0.06
0.02
0
0.04
3
10
2
10
7
5
4
3
2
1
10
7
5
4
3
2
0.2
0.6
1.0
1.4
1.8
2.2
T
j
=25C
T
j
=125C
100
90
60
40
20
0
0
160
20
40
60
80 100 120 140
80
10
70
50
30
NON-REPETITIVE
SECOND
BREAKDOWN
AREA
COLLECTOR
DISSIPATION
Feb.1999
I
rr
(A), Q
rr
(
c)
SURGE COLLECTOR REVERSE CURRENT
I
CSM
(A)
t
rr
(
s)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (DIODE)
RATED SURGE COLLECTOR REVERSE CURRENT
(DIODE FORWARD SURGE CURRENT)
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE (TYPICAL)
CONDUCTION TIME (CYCLES AT 60Hz)
FORWARD CURRENT
I
F
(A)
TIME (s)
Z
th (jc)
(
C/ W)
MITSUBISHI TRANSISTOR MODULES
QM300HA-HB
HIGH POWER SWITCHING USE
INSULATED TYPE
1
10
0
10
0
10
1
10
2
10
3
10
3
10
2
10
1
10
0
10
0
10
1
10
2
10
3
10
2
10
1
10
0
10
1
10
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
I
rr
t
rr
Q
rr
V
CC
=300V
I
B1
=0.6A
I
B2
= 6A
T
j
=25C
T
j
=125C
2
10
1
10
7
5
4
3
2
0
10
7
5
4
3
2
0
3200
2400
800
1600
7
5
3
2
7
5
3
2
7
5
3
2
0.40
0.32
0.24
0.16
0.08
0
2 3
5 7
2 3
5 7
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