Feb.1999
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
APPLICATION
Inverters, Servo drives, DC motor controllers, NC equipment, Welders
QM30TB-2HB
I
C
Collector current .......................... 30A
V
CEX
Collector-emitter voltage ......... 1000V
h
FE
DC current gain............................. 750
Insulated Type
UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
MITSUBISHI TRANSISTOR MODULES
QM30TB-2HB
MEDIUM POWER SWITCHING USE
INSULATED TYPE
7.5 21 7.5 21 7.5 16.5
19
28.5
28.5
21.5
BuP
EuP BvP
EvP BwP
EwP
P
N
U
V
W
BuN
EuN
BvN
EvN
BwN
EwN
127
25
2
5.5
18
40
56
98
110
Tab#110, t=0.5 Tab#250, t=0.8
26.5
17.5
25.6
LABEL
P
N
BuP
EuP
U
BuN
EuN
BvP
EvP
BvN
EvN
V
W
BwP
EwP
BwN
EwN
Note: All Transistor Units are 4-Stage Darlingtons.
Feb.1999
Conditions
I
C
=1A, V
EB
=2V
V
EB
=2V
Emitter open
Collector open
DC
DC (forward diode current)
T
C
=25
C
DC
Peak value of one cycle of 60Hz (half wave)
Charged part to case, AC for 1 minute
Mounting screw M5
Typical value
Ratings
1000
1000
1000
7
30
30
310
2
300
40~+150
40~+125
2500
1.47~1.96
15~20
500
ABSOLUTE MAXIMUM RATINGS
(Tj=25
C, unless otherwise noted)
Symbol
V
CEX (SUS)
V
CEX
V
CBO
V
EBO
I
C
I
C
P
C
I
B
I
CSM
T
j
T
stg
V
iso
--
--
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Collector reverse current
Collector dissipation
Base current
Surge collector reverse current
(forward diode current)
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
Unit
V
V
V
V
A
A
W
A
A
C
C
V
Nm
kgcm
g
MITSUBISHI TRANSISTOR MODULES
QM30TB-2HB
MEDIUM POWER SWITCHING USE
INSULATED TYPE
ELECTRICAL CHARACTERISTICS
(Tj=25
C, unless otherwise noted)
Unit
mA
mA
mA
V
V
V
--
s
s
s
C/ W
C/ W
C/ W
Limits
Min.
--
--
--
--
--
--
750
--
--
--
--
--
--
Symbol
I
CEX
I
CBO
I
EBO
V
CE (sat)
V
BE (sat)
V
CEO
h
FE
t
on
t
s
t
f
R
th (j-c) Q
R
th (j-c) R
R
th (c-f)
Parameter
Collector cutoff current
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-emitter reverse voltage
DC current gain
Switching time
Thermal resistance
(junction to case)
Contact thermal resistance
(case to fin)
Test conditions
V
CE
=1000V, V
EB
=2V
V
CB
=1000V, Emitter open
V
EB
=7V
I
C
=30A, I
B
=40mA
I
C
=30A (diode forward voltage)
I
C
=30A, V
CE
=4V
V
CC
=600V, I
C
=30A, I
B1
=60mA, I
B2
=0.6A
Transistor part (per 1/6 module)
Diode part (per 1/6 module)
Conductive grease applied (per 1/6 module)
Typ.
--
--
--
--
--
--
--
--
--
--
--
--
--
Max.
2.0
2.0
50
4.0
4.0
1.8
--
2.5
15
3.0
0.4
1.5
0.25
Feb.1999
1
10
3
10
2
10
0
10
0
10
1
10
7
5
4
3
2
2
10
7
5
4
3
2
2.6
3.0
3.4
3.8
4.2
4.6
V
CE
=4.0V
T
j
=25C
1
10
7
5
4
3
2
0
10
7
5
4
3
2
1
10
0
10
2 3 4 5 7
1
10
2 3 4 5 7
2
10
V
CE(sat)
V
BE(sat)
T
j
=25C
T
j
=125C
I
B
=40mA
4
10
7
5
4
3
2
3
10
7
5
4
3
2
2
10
0
10
2 3 4 5 7
1
10
2 3 4 5 7
2
10
V
CE
=4V
T
j
=25C
T
j
=125C
V
CE
=10V
50
40
30
20
10
0
0
1
2
3
4
5
I
B
=200mA
I
B
=100mA
I
B
=40mA
I
B
=15mA
I
B
=10mA
T
j
=25C
0
7
5
3
2
7
5
3
2
7
5
3
2
5
4
3
2
1
4
4
4
T
j
=25C
T
j
=125C
I
C
=30A
I
C
=40A
I
C
=10A
1
10
7
5
4
3
2
0
10
7
5
4
3
0
10
2 3 4 5 7
1
10
3
2
T
j
=25C
T
j
=125C
V
CC
=600V
I
B1
=60mA
I
B2
=0.6A
2 3 4 5 7
2
10
t
s
t
f
t
on
PERFORMANCE CURVES
COMMON EMITTER OUTPUT
CHARACTERISTICS (TYPICAL)
COMMON EMITTER INPUT
CHARACTERISTIC (TYPICAL)
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION
VOLTAGE (TYPICAL)
SWITCHING TIME VS. COLLECTOR
CURRENT (TYPICAL)
DC CURRENT GAIN VS.
COLLECTOR CURRENT (TYPICAL)
COLLECTOR CURRENT
I
C
(A)
DC CURRENT GAIN
h
FE
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(A)
BASE CURRENT
I
B
(A)
COLLECTOR-EMITTER SA
TURA
TION
VOL
T
AGE
V
CE
(sat)
(V)
SA
TURA
TION VOL
T
AGE
V
CE (sat)
, V
BE (sat)
(V)
SWITCHING TIME
t
on
, t
s
, t
f
(
s)
COLLECTOR CURRENT
I
C
(A)
BASE-EMITTER VOLTAGE
V
BE
(V)
BASE CURRENT
I
B
(A)
COLLECTOR CURRENT
I
C
(A)
MITSUBISHI TRANSISTOR MODULES
QM30TB-2HB
MEDIUM POWER SWITCHING USE
INSULATED TYPE
Feb.1999
0
10
0
10
1
10
3
10
2
10
1
10
2
10
1
10
0
10
1
10
0
10
1
10
2
10
3
10
80
0
0
200
400
600
800
1000
70
60
50
40
30
20
10
I
B2
=2.5A
T
j
=125C
1
10
7
5
4
3
2
3 4 5 7
0
10
2 3 4 5 7
1
10
0
10
7
5
4
3
3
2
t
s
t
f
2 3
T
j
=25C
T
j
=125C
V
CC
=600V
I
C
=30A
I
B1
=60mA
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
4
4
4
T
C
=25C
1m
S
DC
50
S
500
S
100
S
100
90
60
40
20
0
0
160
20
40
60
80 100 120 140
80
10
70
50
30
2
10
1
10
7
5
4
3
2
0
10
7
5
4
3
2
0.4
0.8
1.2
1.6
2.0
2.4
T
j
=25C
T
j
=125C
7
5
3
2
7
5
3
2
7
5
3
2
0.5
0.4
0.3
0.1
0
4
4
4
2 3 45 7
0.2
3
2
4 5
NONREPETITIVE
COLLECTOR
DISSIPATION
SECOND
BREAKDOWN
AREA
SWITCHING TIME VS. BASE
CURRENT (TYPICAL)
REVERSE BIAS SAFE OPERATING AREA
SWITCHING TIME
t
s
, t
f
(
s)
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
BASE REVERSE CURRENT
I
B2
(A)
FORWARD BIAS SAFE OPERATING AREA
DERATING FACTOR OF F. B. S. O. A.
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
CASE TEMPERATURE
T
C
(
C)
REVERSE COLLECTOR CURRENT VS.
COLLECTOR-EMITTER REVERSE
VOLTAGE (DIODE FORWARD
CHARACTERISTICS) (TYPICAL)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (TRANSISTOR)
COLLECTOR-EMITTER REVERSE VOLTAGE
V
CEO
(V)
TIME (s)
COLLECTOR CURRENT
I
C
(A)
COLLECTOR CURRENT
I
C
(A)
DERA
TING F
ACTOR (%)
COLLECTOR REVERSE CURRENT
I
C
(A)
MITSUBISHI TRANSISTOR MODULES
QM30TB-2HB
MEDIUM POWER SWITCHING USE
INSULATED TYPE
Z
th (jc)
(
C/ W)
Feb.1999
0
10
0
10
1
10
3
10
2
10
1
10
2
10
1
10
0
10
1
10
1
10
2
10
1
10
0
10
0
10
1
10
2
10
3
10
2
10
1
10
7
5
4
3
2
0
10
7
5
4
3
2
0
100
200
300
400
500
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
4
4
4
I
rr
t
rr
Q
rr
T
j
=25C
T
j
=125C
V
CC
=600V
I
B1
=60mA
I
B2
=0.6A
7
5
3
2
7
5
3
2
7
5
3
2
2.0
1.6
1.2
0.8
0.4
0
4
4
4
2 3 4 5 7
3
2
7
5
4
I
rr
(A), Q
rr
(
c)
SURGE COLLECTOR REVERSE CURRENT
I
CSM
(A)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (DIODE)
RATED SURGE COLLECTOR REVERSE CURRENT
(DIODE FORWARD SURGE CURRENT)
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE (TYPICAL)
CONDUCTION TIME (CYCLES AT 60Hz)
FORWARD CURRENT
I
F
(A)
TIME (s)
MITSUBISHI TRANSISTOR MODULES
QM30TB-2HB
MEDIUM POWER SWITCHING USE
INSULATED TYPE
Z
th (jc)
(
C/ W)
t
rr
(
s)
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