Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM30TX-H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
APPLICATION
AC motor controllers, UPS, DC motor controllers, NC equipment
QM30TX-H
I
C
Collector current .......................... 30A
V
CEX
Collector-emitter voltage ........... 600V
h
FE
DC current gain............................... 75
Insulated Type
UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
68
11M4
4
5.4
94
80
(10)
(10)
18.5
18.5
18.5
18.5
20
20
10.5
14
14
62.5
74
86
B1
U
B2
B3
B4
V
B5
B6
W
(P)+
(N)
7
13
13
2
4
24.8
26
28.2
LABEL
B1
B2
B3
B4
U
B5
B6
V
W
P(+)
N()
Note: All Transistor Units are Darlingtons.
Feb.1999
Symbol
V
CEX (SUS)
V
CEX
V
CBO
V
EBO
I
C
I
C
P
C
I
B
I
CSM
T
j
T
stg
V
iso
--
--
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Collector reverse current
Collector dissipation
Base current
Surge collector reverse current
(forward diode current)
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
Ratings
600
600
600
7
30
30
250
1.8
300
40~+150
40~+125
2500
0.98~1.47
10~15
1.47~1.96
15~20
520
Conditions
I
C
=1A, V
EB
=2V
V
EB
=2V
Emitter open
Collector open
DC
DC (forward diode current)
T
C
=25
C
DC
Peak value of one cycle of 60Hz (half wave)
Charged part to case, AC for 1 minute
Main terminal screw M4
Mounting screw M5
Typical value
ABSOLUTE MAXIMUM RATINGS
(Tj=25
C, unless otherwise noted)
Unit
V
V
V
V
A
A
W
A
A
C
C
V
Nm
kgcm
Nm
kgcm
g
MITSUBISHI TRANSISTOR MODULES
QM30TX-H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
ELECTRICAL CHARACTERISTICS
(Tj=25
C, unless otherwise noted)
Unit
mA
mA
mA
V
V
V
--
s
s
s
C/ W
C/ W
C/ W
Limits
Min.
--
--
--
--
--
--
75/100
--
--
--
--
--
--
Symbol
I
CEX
I
CBO
I
EBO
V
CE (sat)
V
BE (sat)
V
CEO
h
FE
t
on
t
s
t
f
R
th (j-c) Q
R
th (j-c) R
R
th (c-f)
Parameter
Collector cutoff current
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-emitter reverse voltage
DC current gain
Switching time
Thermal resistance
(junction to case)
Contact thermal resistance
(case to fin)
Test conditions
V
CE
=600V, V
EB
=2V
V
CB
=600V, Emitter open
V
EB
=7V
I
C
=30A, I
B
=0.4A
I
C
=30A (diode forward voltage)
I
C
=30A, V
CE
=2V/5V
V
CC
=300V, I
C
=30A, I
B1
=I
B2
=0.6A
Transistor part (per 1/6 module)
Diode part (per 1/6 module)
Conductive grease applied (per 1/6 module)
Typ.
--
--
--
--
--
--
--
--
--
--
--
--
--
Max.
1.0
1.0
200
2.0
2.5
1.85
--
1.5
12
3.0
0.5
2.0
0.2
Feb.1999
1
10
0
10
7
5
4
3
2
1
10
7
5
4
3
2
1.0
1.4
1.8
2.2
2.6
3.0
V
CE
=2.0V
T
j
=25C
1
10
7
5
4
3
2
0
10
7
5
4
3
2
1
10
0
10
2 3 4 5 7
1
10
2 3 4 5 7
2
10
V
CE(sat)
V
BE(sat)
T
j
=25C
T
j
=125C
I
B
=0.4A
100
80
60
40
20
0
0
1
2
3
4
5
T
j
=25C
I
B
=2.0A
I
B
=0.3A
I
B
=0.5A
I
B
=0.1A
I
B
=1.0A
3
10
7
5
4
3
2
2
10
7
5
4
3
2
1
10
0
10
2 3 4 5 7
1
10
2 3 4 5 7
2
10
V
CE
=2.0V
T
j
=25C
T
j
=125C
V
CE
=5.0V
0
10
1
10
7
5
4
3
2
2
10
7
5
4
3
2
0
1
2
3
4
5
I
C
=10A
T
j
=25C
T
j
=125C
I
C
=30A
I
C
=20A
7
5
4
3
2
1
10
7
5
4
3
0
10
2 3 4 5 7
1
10
2 3 4 5 7
2
10
7
0
10
7
2
3
1
10
T
j
=25C
T
j
=125C
t
f
t
on
t
s
V
CC
=300V
I
B1
=I
B2
=0.6A
PERFORMANCE CURVES
COMMON EMITTER OUTPUT
CHARACTERISTICS (TYPICAL)
COMMON EMITTER INPUT
CHARACTERISTIC (TYPICAL)
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION
VOLTAGE (TYPICAL)
SWITCHING TIME VS. COLLECTOR
CURRENT (TYPICAL)
DC CURRENT GAIN VS.
COLLECTOR CURRENT (TYPICAL)
COLLECTOR CURRENT
I
C
(A)
DC CURRENT GAIN
h
FE
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(A)
BASE CURRENT
I
B
(A)
COLLECTOR-EMITTER SA
TURA
TION
VOL
T
AGE
V
CE
(sat)
(V)
SA
TURA
TION VOL
T
AGE
V
CE (sat)
, V
BE (sat)
(V)
SWITCHING TIME
t
on
, t
s
, t
f
(
s)
COLLECTOR CURRENT
I
C
(A)
BASE-EMITTER VOLTAGE
V
BE
(V)
BASE CURRENT
I
B
(A)
COLLECTOR CURRENT
I
C
(A)
MITSUBISHI TRANSISTOR MODULES
QM30TX-H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
Feb.1999
0
10
1
10
2
10
0
10
1
10
3
10
2
10
2
10
1
10
0
10
0
10
1
10
2
10
3
10
1
10
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
4
4
4
T
C
=25C
500
S
100
S
DC
1m
S
1
10
7
5
4
3
2
1
10
2 3 4 5 7
0
10
2 3 4 5 7
1
10
0
10
7
5
4
3
3
2
T
j
=25C
T
j
=125C
t
s
t
f
V
CC
=300V
I
C
=30A
I
B1
=0.6A
70
20
0
0
100
700
50
200
400
60
40
30
10
I
B2
=1A
5A
3A
T
j
=125C
300
500 600
100
90
60
40
20
0
0
160
20
40
60
80 100 120 140
80
10
70
50
30
2
10
1
10
7
5
4
3
2
0
10
7
5
4
3
2
0.4
0.8
1.2
1.6
2.0
2.4
T
j
=25C
T
j
=125C
7
5
3
2
7
5
3
2
7
5
3
2
0.5
0.4
0.3
0.1
0
4
4
4
2 3 45 7
0.2
7
5
3
2
4
NONREPETITIVE
COLLECTOR
DISSIPATION
SECOND
BREAKDOWN
AREA
SWITCHING TIME VS. BASE
CURRENT (TYPICAL)
REVERSE BIAS SAFE OPERATING AREA
SWITCHING TIME
t
s
, t
f
(
s)
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
BASE REVERSE CURRENT
I
B2
(A)
FORWARD BIAS SAFE OPERATING AREA
DERATING FACTOR OF F. B. S. O. A.
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
CASE TEMPERATURE
T
C
(
C)
REVERSE COLLECTOR CURRENT VS.
COLLECTOR-EMITTER REVERSE
VOLTAGE (DIODE FORWARD
CHARACTERISTICS) (TYPICAL)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (TRANSISTOR)
COLLECTOR-EMITTER REVERSE VOLTAGE
V
CEO
(V)
TIME (s)
COLLECTOR CURRENT
I
C
(A)
COLLECTOR CURRENT
I
C
(A)
DERA
TING F
ACTOR (%)
COLLECTOR REVERSE CURRENT
I
C
(A)
MITSUBISHI TRANSISTOR MODULES
QM30TX-H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
Z
th (jc)
(
C/ W)
Feb.1999
0
10
1
10
2
10
3
10
0
10
1
10
2
10
1
10
0
10
2
10
1
10
0
10
3
10
2
10
1
10
0
10
1
10
1
10
2
10
1
10
7
5
4
3
2
0
10
7
5
4
3
2
0
100
200
300
400
500
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
4
4
4
I
rr
t
rr
Q
rr
V
CC
=300V
I
B1
=I
B2
=0.6A
T
j
=25C
T
j
=125C
7
5
3
2
7
5
3
2
7
5
3
2
2.0
1.6
1.2
0.8
0.4
0
4
4
4
2 3 4 5 7
3
2
5
4
I
rr
(A), Q
rr
(
c)
SURGE COLLECTOR SURGE CURRENT
I
CSM
(A)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (DIODE)
RATED SURGE COLLECTOR REVERSE CURRENT
(DIODE FORWARD SURGE CURRENT)
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE (TYPICAL)
CONDUCTION TIME (CYCLES AT 60Hz)
FORWARD CURRENT
I
F
(A)
TIME (s)
MITSUBISHI TRANSISTOR MODULES
QM30TX-H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
Z
th (jc)
(
C/ W)
t
rr
(
s)
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