Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM75CY-H
HIGH POWER SWITCHING USE
INSULATED TYPE
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
APPLICATION
UPS, CVCF
QM75CY-H
I
C
Collector current .......................... 75A
V
CEX
Collector-emitter voltage ........... 600V
h
FE
DC current gain............................... 75
Insulated Type
UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
94
34
LABEL
Tab#110,
t=0.5
80
(7)
(7)
20
20
27
B
2
E
2
B
1
6.5
C
1
12
E
1
E
2
C
2
10.5
13
10.5
31
M5
(8)
22.5
6.5
C
2
E
1
E
2
B
2
E
2
C
1
E
1
B
1
E
1
Feb.1999
ABSOLUTE MAXIMUM RATINGS
(Tj=25
C, unless otherwise noted)
ELECTRICAL CHARACTERISTICS
(Tj=25
C, unless otherwise noted)
Unit
mA
mA
mA
V
V
V
--
s
s
s
C/ W
C/ W
C/ W
Limits
Min.
--
--
--
--
--
--
75/100
--
--
--
--
--
--
Symbol
V
CEX (SUS)
V
CEX
V
CBO
V
EBO
I
C
I
C
P
C
I
B
I
CSM
T
j
T
stg
V
iso
--
--
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Collector reverse current
Collector dissipation
Base current
Surge collector reverse current
(forward diode current)
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
Conditions
I
C
=1A, V
EB
=2V
V
EB
=2V
Emitter open
Collector open
DC
DC (forward diode current)
T
C
=25
C
DC
Peak value of one cycle of 60Hz (half wave)
Charged part to case, AC for 1 minute
Main terminal screw M5
Mounting screw M6
Typical value
Ratings
600
600
600
7
75
75
350
4.5
750
40~+150
40~+125
2500
1.47~1.96
15~20
1.96~2.94
20~30
210
Unit
V
V
V
V
A
A
W
A
A
C
C
V
Nm
kgcm
Nm
kgcm
g
Symbol
I
CEX
I
CBO
I
EBO
V
CE (sat)
V
BE (sat)
V
CEO
h
FE
t
on
t
s
t
f
R
th (j-c) Q
R
th (j-c) R
R
th (c-f)
Parameter
Collector cutoff current
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-emitter reverse voltage
DC current gain
Switching time
Thermal resistance
(junction to case)
Contact thermal resistance
(case to fin)
Test conditions
V
CE
=600V, V
EB
=2V
V
CB
=600V, Emitter open
V
EB
=7V
I
C
=75A, I
B
=1A
I
C
=75A (diode forward voltage)
I
C
=50A, V
CE
=2V/5V
V
CC
=300V, I
C
=75A, I
B1
=I
B2
=1.5A
Transistor part (per 1/2 module)
Diode part (per 1/2 module)
Conductive grease applied (per 1/2 module)
Typ.
--
--
--
--
--
--
--
--
--
--
--
--
--
Max.
1.0
1.0
75
2.0
2.5
1.85
--
2.5
15
3.0
0.35
1.3
0.15
MITSUBISHI TRANSISTOR MODULES
QM75CY-H
HIGH POWER SWITCHING USE
INSULATED TYPE
Feb.1999
2
10
1
10
0
10
3
10
2
10
1
10
0
10
1
10
1
10
0
10
2
10
1
10
1
10
1
10
1
10
7
5
4
3
2
0
10
7
5
4
3
2
1.0
3.0
2.6
2.2
1.8
1.4
T
j
=25C
V
CE
=2.0V
200
160
120
80
40
0
0
1
2
3
4
5
T
j
=25C
I
B
=2.0A
I
B
=1.5A
I
B
=0.5A
I
B
=1.0A
1
10
7
5
4
3
2
0
10
7
5
4
3
2
1
10
2 3 4 5 7
2
10
2 3 4 5 7
3
10
T
j
=25C
T
j
=125C
I
B
=1A
V
BE(sat)
V
CE(sat)
3
10
7
5
4
3
2
2
10
7
5
4
3
2
2
0
10
2 3 4 5 7
1
10
2 3 4 5 7
2
10
T
j
=25C
T
j
=125C
V
CE
=5.0V
V
CE
=2.0V
t
s
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
4
4
4
t
on
t
f
T
j
=25C
T
j
=125C
I
B1
=I
B2
=1.5A
V
CC
=300V
7
5
3
2
7
5
3
2
5
4
3
2
1
0
4
4
3
2
4 7
5
T
j
=25C
T
j
=125C
I
C
=100A
I
C
=75A
I
C
=50A
I
C
=30A
PERFORMANCE CURVES
COMMON EMITTER OUTPUT
CHARACTERISTICS (TYPICAL)
COMMON EMITTER INPUT
CHARACTERISTIC (TYPICAL)
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION
VOLTAGE (TYPICAL)
SWITCHING TIME VS. COLLECTOR
CURRENT (TYPICAL)
DC CURRENT GAIN VS.
COLLECTOR CURRENT (TYPICAL)
COLLECTOR CURRENT
I
C
(A)
DC CURRENT GAIN
h
FE
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(A)
BASE CURRENT
I
B
(A)
COLLECTOR-EMITTER SA
TURA
TION
VOL
T
AGE
V
CE
(sat)
(V)
SA
TURA
TION VOL
T
AGE
V
CE (sat)
, V
BE (sat)
(V)
SWITCHING TIME
t
on
, t
s
, t
f
(
s)
COLLECTOR CURRENT
I
C
(A)
BASE-EMITTER VOLTAGE
V
BE
(V)
BASE CURRENT
I
B
(A)
COLLECTOR CURRENT
I
C
(A)
MITSUBISHI TRANSISTOR MODULES
QM75CY-H
HIGH POWER SWITCHING USE
INSULATED TYPE
Feb.1999
3
10
2
10
1
10
3
10
2
10
1
10
0
10
0
10
1
10
3
10
2
10
1
10
100
80
60
40
20
0
0
20
60
100 120
160
40
80
140
10
30
50
70
90
160
0
0
200
400
600
800
120
80
40
140
100
60
20
I
B2
=2A
100
300
500
700
5A
T
C
=125C
1
10
7
5
4
3
2
0
10
7
5
4
3
2
2 3 4 5 7
0
10
2 3 4 5 7
1
10
2
t
s
t
f
V
CC
=300V
I
B1
=1.5A
I
C
=75A
T
j
=25C
T
j
=125C
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
4
4
4
T
C
=25C
100s
1ms
DC
10ms
500s
7
5
3
2
7
5
3
2
7
5
3
2
0.5
0.4
0.3
0.1
0
7
5
3
2
1
10
0
10
0
10
4
4
4
4
2
0.2
2
10
7
5
4
3
2
1
10
7
5
4
3
2
0
2.0
1.6
1.2
0.8
0.4
T
j
=25C
T
j
=125C
0
10
NONREPETITIVE
COLLECTOR
DISSIPATION
SECOND
BREAKDOWN
AREA
t
w
=50s
SWITCHING TIME VS. BASE
CURRENT (TYPICAL)
REVERSE BIAS SAFE OPERATING AREA
SWITCHING TIME
t
s
, t
f
(
s)
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
BASE REVERSE CURRENT
I
B2
(A)
FORWARD BIAS SAFE OPERATING AREA
DERATING FACTOR OF F. B. S. O. A.
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
CASE TEMPERATURE
T
C
(
C)
REVERSE COLLECTOR CURRENT VS.
COLLECTOR-EMITTER REVERSE
VOLTAGE (DIODE FORWARD
CHARACTERISTICS) (TYPICAL)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (TRANSISTOR)
COLLECTOR-EMITTER REVERSE VOLTAGE
V
CEO
(V)
TIME (s)
COLLECTOR CURRENT
I
C
(A)
COLLECTOR CURRENT
I
C
(A)
DERA
TING F
ACTOR (%)
COLLECTOR REVERSE CURRENT
I
C
(A)
MITSUBISHI TRANSISTOR MODULES
QM75CY-H
HIGH POWER SWITCHING USE
INSULATED TYPE
Z
th (jc)
(
C/ W)
Feb.1999
7
5
3
2
7
5
3
2
7
5
3
2
2.0
1.6
1.2
0.8
0.4
0
7
5
3
2
1
10
0
10
0
10
3
10
2
10
1
10
4
4
4
4
2
7
5
3 4
1
10
7
5
3
2
0
10
7
5
4
3
2
0
100
300
500
700
800
2
10
4
400
200
600
7
5
4
3
2
7
5
4
3
2
1
10
2 3 4
0
10
5 7
2 3 4
0
10
1
10
0
10
1
10
2
10
5 7
t
rr
I
rr
Q
rr
T
j
=25C
T
j
=125C
V
CC
=300V
I
B1
=I
B2
=1.5A
1
10
2
10
I
rr
(A), Q
rr
(
c)
SURGE COLLECTOR REVERSE CURRENT
I
CSM
(A)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (DIODE)
RATED SURGE COLLECTOR REVERSE CURRENT
(DIODE FORWARD SURGE CURRENT)
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE (TYPICAL)
CONDUCTION TIME (CYCLES AT 60Hz)
FORWARD CURRENT
I
F
(A)
TIME (s)
MITSUBISHI TRANSISTOR MODULES
QM75CY-H
HIGH POWER SWITCHING USE
INSULATED TYPE
Z
th (jc)
(
C/ W)
t
rr
(
s)
PDF 
ZIP