Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM75E2Y/E3Y-2H
HIGH POWER SWITCHING USE
INSULATED TYPE
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
APPLICATION
DC chopper, DC motor controllers, Inverters
QM75E2Y/E3Y-2H
108
93
(7.5)
(7.5)
34
13
10.5
10.5
E
1
B
1
M5
Tab#110,
t=0.5
6.5
23
30
37
C
1
A
1
E
1
B
1
E
1
D
1
D
2
D
2
D
1
E
1
E
1
B
1
C
1
K
1
12
46.5
5
8
8
15
LABEL
6.5
(E
2
Y)
(E
3
Y)
23
23
I
C
Collector current .......................... 75A
V
CEX
Collector-emitter voltage ......... 1000V
h
FE
DC current gain............................... 75
Insulated Type
UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM75E2Y/E3Y-2H
HIGH POWER SWITCHING USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS
(Transistor part including D1, T
j
=25
C)
Symbol
V
CEX (SUS)
V
CEX
V
CBO
V
EBO
I
C
I
C
P
C
I
B
I
CSM
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Collector reverse current
Collector dissipation
Base current
Surge collector reverse current
(forward diode current)
Conditions
I
C
=1A, V
EB
=2V
V
EB
=2V
Emitter open
Collector open
DC
DC (forward diode current)
T
C
=25
C
DC
Peak value of one cycle of 60Hz (half wave)
Ratings
1000
1000
1000
7
75
75
500
4
750
Unit
V
V
V
V
A
A
W
A
A
ABSOLUTE MAXIMUM RATINGS
(Diode part (D2), T
j
=25
C)
Symbol
V
RRM
V
RSM
V
R (DC)
I
DC
I
FSM
I
2t
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
DC current
Surge (non-repetitive) forward current
I
2t
for fusing
Conditions
DC circuit, resistive, inductive load
Peak value of one cycle of 60Hz (half wave)
Value for one cycle of surge current
Ratings
1000
1100
800
75
1500
9.45
10
3
Unit
V
V
V
A
A
A
2
s
ABSOLUTE MAXIMUM RATINGS
(Common)
Symbol
T
j
T
stg
V
iso
--
--
Parameter
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
Conditions
Charged part to case, AC for 1 minute
Main terminal screw M5
Mounting screw M6
Typical value
Ratings
40~150
40~125
2500
1.47~1.96
15~20
1.96~2.94
20~30
250
Unit
C
C
V
Nm
kgcm
Nm
kgcm
g
Unit
mA
mA
mA
V
V
V
--
s
s
s
C/ W
C/ W
C/ W
Limits
Min.
--
--
--
--
--
--
75/100
--
--
--
--
--
--
Symbol
I
CEX
I
CBO
I
EBO
V
CE (sat)
V
BE (sat)
V
CEO
h
FE
t
on
t
s
t
f
R
th (j-c) Q
R
th (j-c) R
R
th (c-f)
Parameter
Collector cutoff current
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-emitter reverse voltage
DC current gain
Switching time
Thermal resistance
(junction to case)
Contact thermal resistance
(case to fin)
Test conditions
V
CE
=1000V, V
EB
=2V
V
CB
=1000V, Emitter open
V
EB
=7V
I
C
=75A, I
B
=1.5A
I
C
=75A (diode forward voltage)
I
C
=75A, V
CE
=2.8V/5V
V
CC
=600V, I
C
=75A, I
B1
=I
B2
=1.5A
Transistor part
Diode part
Conductive grease applied
Typ.
--
--
--
--
--
--
--
--
--
--
--
--
--
Max.
1.0
1.0
100
2.5
3.5
1.8
--
2.5
15
3.0
0.25
1.2
0.13
ELECTRICAL CHARACTERISTICS
(Transistor part including D1, T
j
=25
C)
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM75E2Y/E3Y-2H
HIGH POWER SWITCHING USE
INSULATED TYPE
ELECTRICAL CHARACTERISTICS
(Diode part (D2), T
j
=25
C)
Symbol
I
RRM
V
FM
t
rr
Q
rr
R
th (j-c)
R
th (c-f)
Parameter
Repetitive peak reverse current
Forward voltage
Reverse recovery time
Reverse recovery charge
Thermal resistance
Contact thermal resistance
Test conditions
V
R
=V
RRM
, T
j
=150
C
I
F
=75A
I
F
=75A, di/dt=150A/
s, V
R
=600V, T
j
=150
C
Junction to case
Conductive grease applied (case to fin)
Unit
mA
V
s
C
C/ W
C/ W
Limits
Min.
--
--
--
--
--
--
Typ.
--
--
--
--
--
--
Max.
15
1.5
1.0
40
0.6
0.13
PERFORMANCE CURVES
COMMON EMITTER INPUT
CHARACTERISTIC (TYPICAL)
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
COLLECTOR CURRENT
I
C
(A)
DC CURRENT GAIN
h
FE
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(A)
BASE CURRENT
I
B
(A)
SA
TURA
TION VOL
T
AGE
V
CE (sat)
, V
BE (sat)
(V)
COLLECTOR CURRENT
I
C
(A)
BASE-EMITTER VOLTAGE
V
BE
(V)
COMMON EMITTER OUTPUT
CHARACTERISTICS (TYPICAL)
DC CURRENT GAIN VS.
COLLECTOR CURRENT (TYPICAL)
4
10
3
10
2
10
1
10
3
10
2
10
1
10
0
10
1
10
0
10
7
5
4
3
2
1
10
7
5
4
3
2
1.8
2.2
2.6
3.0
3.4
3.8
V
CE
=2.8V
T
j
=25C
1
10
1
10
7
5
4
3
2
0
10
7
5
4
3
2
0
10
2 3 4 5 7
1
10
2 3 4 5 7
2
10
T
j
=25C
T
j
=125C
V
BE(sat)
V
CE(sat)
I
B
=1.5A
100
80
60
40
20
0
0
1
2
3
4
5
T
j
=25C
I
B
=0.5A
I
B
=0.2A
I
B
=0.1A
I
B
=1.0A
I
B
=1.5A
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
4
4
4
T
j
=25C
T
j
=125C
V
CE
=2.8V
V
CE
=5.0V
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM75E2Y/E3Y-2H
HIGH POWER SWITCHING USE
INSULATED TYPE
COLLECTOR-EMITTER SATURATION
VOLTAGE (TYPICAL)
SWITCHING TIME VS. COLLECTOR
CURRENT (TYPICAL)
COLLECTOR-EMITTER SA
TURA
TION
VOL
T
AGE
V
CE
(sat)
(V)
SWITCHING TIME
t
on
, t
s
, t
f
(
s)
BASE CURRENT
I
B
(A)
COLLECTOR CURRENT
I
C
(A)
SWITCHING TIME VS. BASE
CURRENT (TYPICAL)
REVERSE BIAS SAFE OPERATING AREA
SWITCHING TIME
t
s
, t
f
(
s)
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
BASE REVERSE CURRENT
I
B2
(A)
FORWARD BIAS SAFE OPERATING AREA
DERATING FACTOR OF F. B. S. O. A.
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
CASE TEMPERATURE
T
C
(
C)
COLLECTOR CURRENT
I
C
(A)
COLLECTOR CURRENT
I
C
(A)
DERA
TING F
ACTOR (%)
3
10
3
10
2
10
1
10
0
10
0
10
1
10
2
10
2
10
1
10
0
10
1
10
0
10
1
10
2
10
3
10
2
10
1
10
0
10
1
10
100
80
60
40
20
0
0
20
60
100 120
160
40
80
140
10
30
50
70
90
160
0
0
1000
800
600
400
200
20
40
60
80
100
120
140
I
B2
=4A
T
j
=125C
I
B2
=2A
2
10
7
5
4
3
2
1
10
7
5
4
3 4 5 7
0
10
2 3 4 5 7
1
10
1
10
2
3
2
0
10
t
s
T
j
=25C
T
j
=125C
I
B1
=1.5A
V
CC
=600V
I
C
=75A
t
f
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
4
4
4
DC
t
w
=50s
1ms
100s
200s
7
5
3
2
7
5
3
2
7
5
3
2
0
5
4
4
4
4
3
2
1
T
j
=25C
T
j
=125C
I
C
=30A
I
C
=75A
I
C
=50A
I
C
=100A
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
4
4
4
T
j
=25C
T
j
=125C
V
CC
=600V
I
B1
=I
B2
=1.5A
t
s
t
on
t
f
T
C
=25C
NON-REPETITIVE
COLLECTOR
DISSIPATION
SECOND BREAK-
DOWN AREA
Feb.1999
PERFORMANCE CURVES (Diode part (D1))
MITSUBISHI TRANSISTOR MODULES
QM75E2Y/E3Y-2H
HIGH POWER SWITCHING USE
INSULATED TYPE
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (TRANSISTOR)
Z
th (j-c)
(
C/W)
TIME (s)
FORWARD CHARACTERISTICS
(TYPICAL)
MAXIMUM SURGE CURRENT
FOR
W
ARD CURRENT
I
F
(A)
CONDUCTION TIME
(CYCLES AT 60Hz)
FORWARD VOLTAGE
V
F
(A)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC
FORWARD CURRENT
I
F
(A)
TIME (s)
I
rr
(A), Q
rr
(
c)
SURGE FORW
ARD CURRENT
I
FSM
(A)
Z
th (j-c)
(
C/W)
t
rr
(
s)
1
10
0
10
1
10
1
10
0
10
3
10
2
10
1
10
0
10
0
10
1
10
2
10
3
10
1
10
0
10
2
10
1
10
7
5
4
3
2
0
10
7
5
4
3
2
0
0.4
0.8
1.2
1.6
2.0
T
j
=25C
T
j
=125C
2
10
1
10
7
5
4
3
2
0
10
7
5
4
3
2
0
800
100
200
300
500
400
600
700
2
10
7
5
4
3
2
1
10
7
5
4
3
2
0
10
0
10
2 3 4 5 7
1
10
2 3 4 5 7
2
10
T
j
=25C
T
j
=125C
V
CC
=600V
I
B1
=I
B2
=1.5A
I
rr
Q
rr
t
rr
7
5
7
5
3
2
7
5
3
2
7
5
3
2
0.4
0.8
1.2
1.6
2.0
0
3
2
7
5
3
2
4
4
4
4
4
7
5
3
2
7
5
3
2
7
5
3
2
0
7
5
3
2
0.32
4
4
4
4
0.28
0.24
0.20
0.16
0.12
0.08
0.04
Feb.1999
I
rr
(A), Q
rr
(
C)
SURGE FORW
ARD CURRENT
I
FSM
(A)
REVERSE RECOVERY CHARACTERISTICS
(VS. di/dt) (TYPICAL)
MAXIMUM SURGE CURRENT
REVERSE RECOVERY CHARACTERISTICS
(VS. I
F
) (TYPICAL)
CONDUCTION TIME (CYCLES AT 60Hz)
FORWARD CURRENT
I
F
(A)
di/dt (A/
s)
I
rr
(A), Q
rr
(
C)
MITSUBISHI TRANSISTOR MODULES
QM75E2Y/E3Y-2H
HIGH POWER SWITCHING USE
INSULATED TYPE
MAXIMUM FORWARD CHARACTERISTIC
FOR
W
ARD CURRENT
I
F
(A)
FORWARD VOLTAGE
V
F
(V)
PERFORMANCE CURVES (Diode part (D2))
Z
th (jc)
(
C/W)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC
TIME (s)
t
rr
(
s)
t
rr
(
s)
2
10
1
10
0
10
0
10
1
10
2
10
3
10
1
10
1
10
2
10
1
10
0
10
2
10
1
10
0
10
1
10
0
10
1
10
2
10
3
10
1
10
2
10
1
10
0
10
1
10
2
10
3
10
1
10
0
10
0
10
3
10
2
10
1
10
0
10
2
10
1
10
7
5
4
3
2
0
10
7
5
4
3
2
0
400
800
1200
1600
2000
200
600
1000
1400
1800
7
5
3
2
7
5
3
2
7
5
3
2
0.6
1.0
1.4
1.8
2.2
T
j
=25C
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
4
4
4
I
rr
t
rr
T
j
=25C
T
j
=150C
V
R
=600V
di/dt=150A/s
Q
rr
7
5
3
2
7
5
3
2
7
5
3
2
0.2
0.4
0.6
0.8
1.0
0
5
3
2
7
5
3
2
4
4
4
4
4
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
4
4
4
T
j
=25C
T
j
=150C
V
R
=300V
I
F
=75A
I
rr
Q
rr
t
rr
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