MITSUBISHI RF MOSFET MODULE
RA18H1213G
1.24-1.30GHz 18W 12.5V, 3 Stage Amp. For MOBILE RADIO
RA18H1213G
MITSUBISHI ELECTRIC
5 April 2004
1/9
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
DESCRIPTION
The RA18H1213G is a 18-watt RF MOSFET Amplifier
Module for 12.5-volt mobile radios that operate in the 1.24- to
1.30-GHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage (V
GG
=0V), only a small leakage current flows into the
drain and the RF input signal attenuates up to 60 dB. The output
power and drain current increase as the gate voltage increases.
With a gate voltage around 4V (minimum), output power and
drain current increases substantially. The nominal output power
becomes available at 4.5V (typical) and 5V (maximum). At
V
GG
=5V, the typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but may
also be used for linear modulation by setting the drain quiescent
current with the gate voltage and controlling the output power with
the input power.
FEATURES
Enhancement-Mode MOSFET Transistors
(I
DD
0 @ V
DD
=12.5V, V
GG
=0V)
P
out
>18W,
T
>20% @ V
DD
=12.5V, V
GG
=5V, P
in
=200mW
Broadband Frequency Range: 1.24-1.30GHz
Low-Power Control Current I
GG
=1mA (typ) at V
GG
=5V
Module Size: 66 x 21 x 9.88 mm
Linear operation is possible by setting the quiescent drain
current with the gate voltage and controlling the output power
with the input power
ORDERING INFORMATION:
ORDER NUMBER
SUPPLY FORM
RA18H1213G-01
Antistatic tray,
10 modules/tray
1 RF Input (P
in
)
2 Gate Voltage (V
GG
), Power Control
3 Drain Voltage (V
DD
), Battery
4 RF Output (P
out
)
5 RF Ground (Case)
BLOCK DIAGRAM
2
4
1
5
3
PACKAGE CODE: H2S
MITSUBISHI RF POWER MODULE
RA18H1213G
RA18H1213G
MITSUBISHI ELECTRIC
5 April 2004
2/9
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MAXIMUM RATINGS
(T
case
=+25C, unless otherwise specified)
SYMBOL PARAMETER
CONDITIONS
RATING
UNIT
V
DD
Drain Voltage
V
GG
<5V, Z
G
=Z
L
=50
17
V
V
GG
Gate Voltage
V
DD
<12.5V, P
in
=0mW, Z
G
=Z
L
=50
6
V
P
in
Input Power
300
mW
P
out
Output Power
f=1.24-1.30GHz,
Z
G
=Z
L
=50
30
W
T
case(OP)
Operation Case Temperature Range
f=1.24-1.30GHz, Z
G
=Z
L
=50
-30 to +110
C
T
stg
Storage Temperature Range
-40 to +110
C
The above parameters are independently guaranteed.
ELECTRICAL CHARACTERISTICS
(T
case
=+25C, Z
G
=Z
L
=50
, unless otherwise specified)
SYMBOL PARAMETER
CONDITIONS
MIN
TYP MAX UNIT
f
Frequency Range
1.24
1.30
GHz
P
out
Output Power
18
W
T
Total Efficiency
20
%
2f
o
2
nd
Harmonic
-30
in
Input VSWR
3:1
--
I
GG
Gate Current
V
DD
=12.5V, V
GG
=5V, P
in
=200mW
1
mA
Gp
Linear power gain
V
DD
=12.5V, V
GG
=5V, P
in
=10dBm
23
dB
IMD3
3
rd
Inter Modulation Distortion
-20
dBc
IMD5
5
th
Inter Modulation Distortion
V
DD
=12.5V, V
GG
=5V
Delta f=f1-f2=10KHz
P
out
=14W P.E.P. (P
in
control)
-25
dBc
--
Stability
V
DD
=10.0-15.5V, P
in
=0-25dBm,
P
out
=1 to 18W (V
GG
control), Load VSWR=3:1
No parasitic oscillation
--
--
Load VSWR Tolerance
V
DD
=15.2V, P
in
=200mW,
P
out
=18W (V
GG
control), Load VSWR=8:1
No degradation or destroy
--
All parameters, conditions, ratings, and limits are subject to change without notice.
MITSUBISHI RF POWER MODULE
RA18H1213G
RA18H1213G
MITSUBISHI ELECTRIC
5 April 2004
3/9
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
TYPICAL PERFORMANCE
(T
case
=+25C, Z
G
=Z
L
=50
, unless otherwise specified)
OUTPUT POWER, TOTAL EFFICIENCY,
2
nd
, 3
rd
HARMONICS versus FREQUENCY
and INPUT VSWR versus FREQUENCY
OUTPUT POWER, POWER GAIN and
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
DRAIN CURRENT versus INPUT POWER
OUTPUT POWER, POWER GAIN and
OUTPUT POWER and DRAIN CURRENT
DRAIN CURRENT versus INPUT POWER
versus DRAIN VOLTAGE
OUTPUT POWER and DRAIN CURRENT
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
versus DRAIN VOLTAGE
0
10
20
30
40
1220
1240
1260
1280
1300
1320
FREQUENCY f(MHz)
OUTPUT POWER P
out
(W)
INPUT VSWR
in
(-)
0
10
20
30
40
50
60
70
80
TOTAL EFFICIENCY
T
(%)
V
DD
=12.5V
V
GG
=5V
P
in
=200mW
P
out
T
in
0
10
20
30
40
50
0
5
10
15
20
25
INPUT POWER P
in
(dBm)
OUTPUT POWER
P
out
(dBm)
POWER GAIN Gp(dB)
0
2
4
6
8
10
DRAIN CURRENT I
DD
(A)
f=1240MHz,
V
DD
=12.5V,
V
GG
=5V
P
out
I
DD
Gp
0
10
20
30
40
50
0
5
10
15
20
25
INPUT POWER P
in
(dBm)
OUTPUT POWER
P
out
(dBm)
POWER GAIN Gp(dB)
0
2
4
6
8
10
DRAIN CURRENT
I
DD
(A)
f=1270MHz,
V
DD
=12.5V,
V
GG
=5V
P
out
Gp
I
DD
0
10
20
30
40
50
6
8
10
12
14
16
DRAIN VOLTAGE V
DD
(V)
OUTPUT POWER P
out
(W)
0
2
4
6
8
10
DRAIN CURRENT I
DD
(A)
P
out
f=1240MHz,
V
GG
=5V,
P
in
=200mW
I
DD
-70
-60
-50
-40
-30
-20
1220
1240
1260
1280
1300
1320
FREQUENCY f(MHz)
HARMONICS (dBc)
V
DD
=12.5V
V
GG
=5V
P
in
=200mW
3
nd
2
rd
0
10
20
30
40
50
0
5
10
15
20
25
INPUT POWER P
in
(dBm)
OUTPUT POWER
P
out
(dBm)
POWER GAIN Gp(dB)
0
2
4
6
8
10
DRAIN CURRENT I
DD
(A)
f=1300MHz,
V
DD
=12.5V,
V
GG
=5V
P
out
Gp
I
DD
0
10
20
30
40
50
6
8
10
12
14
16
DRAIN VOLTAGE V
DD
(V)
OUTPUT POWER P
out
(W)
0
2
4
6
8
10
DRAIN CURRENT I
DD
(A)
P
out
f=1270MHz,
V
GG
=5V,
P
in
=200mW
I
DD
0
10
20
30
40
50
6
8
10
12
14
16
DRAIN VOLTAGE V
DD
(V)
OUTPUT POWER P
out
(W)
0
2
4
6
8
10
DRAIN CURRENT I
DD
(A)
P
out
f=1300MHz,
V
GG
=5V,
P
in
=200mW
I
DD
MITSUBISHI RF POWER MODULE
RA18H1213G
RA18H1213G
MITSUBISHI ELECTRIC
5 April 2004
4/9
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
TYPICAL PERFORMANCE
(T
case
=+25C, Z
G
=Z
L
=50
, unless otherwise specified)
OUTPUT POWER and DRAIN CURRENT
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
versus GATE VOLTAGE
OUTPUT POWER and DRAIN CURRENT
3rd,5th.INTERMODULATION DISTORTIN
versus GATE VOLTAGE
versus
OUTPUT POWER CHARACTERISTICS
3rd,5th.INTERMODULATION DISTORTIN
3rd,5th.INTERMODULATION DISTORTIN
versus
OUTPUT POWER CHARACTERISTICS
versus
OUTPUT POWER CHARACTERISTICS
0
10
20
30
40
50
60
3
3.5
4
4.5
5
5.5
6
GATE VOLTAGE V
GG
(V)
OUTPUT POWER P
out
(W)
0
2
4
6
8
10
12
DRAIN CURRENT I
DD
(A)
P
out
f=1240MHz,
V
DD
=12.5V,
P
in
=200mW
I
DD
0
10
20
30
40
50
60
3
3.5
4
4.5
5
5.5
6
GATE VOLTAGE V
GG
(V)
OUTPUT POWER P
out
(W)
0
2
4
6
8
10
12
DRAIN CURRENT I
DD
(A)
P
out
f=1270MHz,
V
DD
=12.5V,
P
in
=200mW
I
DD
0
10
20
30
40
50
60
3
3.5
4
4.5
5
5.5
6
GATE VOLTAGE V
GG
(V)
OUTPUT POWER P
out
(W)
0
2
4
6
8
10
12
DRAIN CURRENT I
DD
(A)
P
out
f=1300MHz,
V
DD
=12.5V,
P
in
=200mW
I
DD
-60
-50
-40
-30
-20
26 28 30 32 34 36 38 40 42 44
OUTPUT POWER(dBm P.E.P.)
IMD3,IMD5 (dBc)
f=1240MHz
V
DD
=12.5V
V
GG
=5V
IMD3
IMD5
-60
-50
-40
-30
-20
26 28 30 32 34 36 38 40 42 44
OUTPUT POWER(dBm P.E.P.)
IMD3,IMD5 (dBc)
f=1270MHz
V
DD
=12.5V
V
GG
=5V
IMD3
IMD5
-60
-50
-40
-30
-20
26 28 30 32 34 36 38 40 42 44
OUTPUT POWER(dBm P.E.P.)
IMD3,IMD5 (dBc)
f=1300MHz
V
DD
=12.5V
V
GG
=5V
IMD3
IMD5
MITSUBISHI RF POWER MODULE
RA18H1213G
RA18H1213G
MITSUBISHI ELECTRIC
5 April 2004
5/9
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
OUTLINE DRAWING (mm)
1 RF Input (P
in
)
2 Gate Voltage (V
GG
)
3 Drain Voltage (V
DD
)
4 RF Output (P
out
)
5 RF Ground (Case)
12.0 1
16.5 1
43.5 1
55.5 1
66.0 0.5
60.0 0.5
51.5 0.5
3.0 0.3
7.25 0.8
14.0
1
21.0
0.5
9.5
0.5
2.0 0.5
2-R2 0.5
17.0
0.
5
0.45 0.15
4.0
0.3
5
1
2
3
4
3.1 +0.6/
-
0.4
7.5 0.5
2.3
0.3
(9.
8
8)
(50.4)
0.09
0.02
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