MITSUBISHI RF MOSFET MODULE
RA30H3340M
330-400MHz 30W 12.5V MOBILE RADIO
RA30H3340M
MITSUBISHI ELECTRIC
2 Dec 2002
1/9
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
DESCRIPTION
The RA30H3340M is a 30-watt RF MOSFET Amplifier
Module for 12.5-volt mobile radios that operate in the 330- to
400-MHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage (V
GG
=0V), only a small leakage current flows into the
drain and the RF input signal attenuates up to 60 dB. The output
power and drain current increase as the gate voltage increases.
With a gate voltage around 4V (minimum), output power and
drain current increases substantially. The nominal output power
becomes available at 4.5V (typical) and 5V (maximum). At
V
GG
=5V, the typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but may
also be used for linear modulation by setting the drain quiescent
current with the gate voltage and controlling the output power with
the input power.
FEATURES
Enhancement-Mode MOSFET Transistors
(I
DD
0 @ V
DD
=12.5V, V
GG
=0V)
P
out
>30W,
T
>40% @ V
DD
=12.5V, V
GG
=5V, P
in
=50mW
Broadband Frequency Range: 330-400MHz
Low-Power Control Current I
GG
=1mA (typ) at V
GG
=5V
66 x 21 x 9.8 mm
Linear operation is possible by setting the quiescent drain
current with the gate voltage and controlling the output power
with the input power
ORDERING INFORMATION:
ORDER NUMBER
SUPPLY FORM
RA30H3340M-E01
RA30H3340M-01
(Japan - packed without desiccator)
Antistatic tray,
10 modules/tray
1 RF Input (P
in
)
2 Gate Voltage (V
GG
), Power Control
3 Drain Voltage (V
DD
), Battery
4 RF Output (P
out
)
5 RF Ground (Case)
BLOCK DIAGRAM
2
4
1
5
3
MITSUBISHI RF POWER MODULE
RA30H3340M
RA30H3340M
MITSUBISHI ELECTRIC
2 Dec 2002
2/9
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MAXIMUM RATINGS
(T
case
=+25C, unless otherwise specified)
SYMBOL PARAMETER CONDITIONS RATING UNIT
V
DD
Drain Voltage V
GG
<5V 17 V
V
GG
Gate Voltage V
DD
<12.5V, P
in
=0mW 6 V
P
in
Input Power 100 mW
P
out
Output Power
f=330-400MHz,
Z
G
=Z
L
=50
45 W
T
case(OP)
Operation Case Temperature Range -30 to +110 C
T
stg
Storage Temperature Range
-40 to +110 C
Above Parameters are guaranteed independently
ELECTRICAL CHARACTERISTICS
(T
case
=+25C, Z
G
=Z
L
=50
, unless otherwise specified)
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT
f Frequency Range 330 400 MHz
P
out
Output Power 30 W
T
Total Efficiency 40 %
2f
o
2
nd
Harmonic -25 dBc
in
Input VSWR 3:1 --
I
GG
Gate Current
V
DD
=12.5V,
V
GG
=5V,
P
in
=50mW
0.6 mA
-- Stability V
DD
=10.0-15.2V, P
in
=25-70mW,
P
out
<40W (V
GG
control), Load VSWR=3:1 No parasitic oscillation --
--
Load VSWR Tolerance V
DD
=15.2V, P
in
=50mW, P
out
=30W (V
GG
control),
Load VSWR=20:1 No degradation or destroy --
All Parameters, Conditions, Ratings and Limits are subject to change without notice
MITSUBISHI RF POWER MODULE
RA30H3340M
RA30H3340M
MITSUBISHI ELECTRIC
2 Dec 2002
3/9
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
OUTPUT POWER, TOTAL EFFICIENCY, 2
nd
, 3
rd
HARMONICS versus FREQUENCY
and INPUT VSWR versus FREQUENCY
OUTPUT POWER, POWER GAIN and OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER DRAIN CURRENT versus INPUT POWER
0
10
20
30
40
50
60
320 330 340 350 360 370 380 390 400 410
FREQUENCY f(MHz)
OUTPUT POWER
P
out
(W)
INPUT VSWR
in
(-)
0
20
40
60
80
100
120
TOTAL EFFICIENCY
T
(%)
V
DD
=12.5V
V
GG
=5V
P
in
=50mW
P
out
T
in
0
10
20
30
40
50
60
-10
-5
0
5
10
15
20
INPUT POWER P
in
(dBm)
OUTPUT POWER
P
out
(dBm)
POWER GAIN Gp(dB)
0
2
4
6
8
10
12
DRAIN CURRENT
I
DD
(A)
f=330MHz,
V
DD
=12.5V,
V
GG
=5V
P
out
I
DD
Gp
0
10
20
30
40
50
60
-10
-5
0
5
10
15
20
INPUT POWER P
in
(dBm)
OUTPUT POWER
P
out
(dBm)
POWER GAIN Gp(dB)
0
2
4
6
8
10
12
DRAIN CURRENT
I
DD
(A)
f=365MHz,
V
DD
=12.5V,
V
GG
=5V
P
out
Gp
I
DD
-70
-60
-50
-40
-30
-20
320 330 340 350 360 370 380 390 400 410
FREQUENCY f(MHz)
HARMONICS (dBc)
V
DD
=12.5V
V
GG
=5V
P
in
=50mW
2
nd
3
rd
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
OUTPUT POWER and DRAIN CURRENT
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
versus DRAIN VOLTAGE
0
10
20
30
40
50
60
70
80
90
2
4
6
8
10
12
14
16
DRAIN VOLTAGE V
DD
(V)
OUTPUT POWER P
out
(W)
0
2
4
6
8
10
12
14
16
18
DRAIN CURRENT I
DD
(A)
P
out
f=330MHz,
V
GG
=5V,
P
i n
=50mW
I
DD
0
10
20
30
40
50
60
-10
-5
0
5
10
15
20
INPUT POWER P
in
(dBm)
OUTPUT POWER
P
out
(dBm)
POWER GAIN Gp(dB)
0
2
4
6
8
10
12
DRAIN CURRENT
I
DD
(A)
f=400MHz,
V
DD
=12.5V,
V
GG
=5V
P
out
Gp
I
DD
0
10
20
30
40
50
60
70
80
90
2
4
6
8
10
12
14
16
DRAIN VOLTAGE V
DD
(V)
OUTPUT POWER P
out
(W)
0
2
4
6
8
10
12
14
16
18
DRAIN CURRENT I
D
D
(A)
P
o u t
I
DD
f=365MHz,
V
GG
=5V,
P
i n
=50mW
TYPICAL PERFORMANCE
(T
case
=+25C, Z
G
=Z
L
=50
, unless otherwise specified)
MITSUBISHI RF POWER MODULE
RA30H3340M
RA30H3340M
MITSUBISHI ELECTRIC
2 Dec 2002
4/9
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
OUTPUT POWER and DRAIN CURRENT
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
versus GATE VOLTAGE
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
0
10
20
30
40
50
60
2
2.5
3
3.5
4
4.5
5
GATE VOLTAGE V
GG
(V)
OUTPUT POWER P
out
(W)
0
2
4
6
8
10
12
DRAIN CURRENT I
DD
(A)
P
out
f=330MHz,
V
DD
=12.5V,
P
in
=50mW
I
DD
0
10
20
30
40
50
60
70
80
90
2
4
6
8
10
12
14
16
DRAIN VOLTAGE V
DD
(V)
OUTPUT POWER P
out
(W)
0
2
4
6
8
10
12
14
16
18
DRAIN CURRENT I
DD
(A)
P
out
I
DD
f=400MHz,
V
GG
=5V,
P
in
=50mW
0
10
20
30
40
50
60
2
2.5
3
3.5
4
4.5
5
GATE VOLTAGE V
GG
(V)
OUTPUT POWER P
out
(W)
0
2
4
6
8
10
12
DRAIN CURRENT I
DD
(A)
P
out
I
DD
f=365MHz,
V
DD
=12.5V,
P
in
=50mW
0
10
20
30
40
50
60
2
2.5
3
3.5
4
4.5
5
GATE VOLTAGE V
GG
(V)
OUTPUT POWER P
out
(W)
0
2
4
6
8
10
12
DRAIN CURRENT I
DD
(A)
P
out
I
DD
f=400MHz,
V
DD
=12.5V,
P
in
=50mW
TYPICAL PERFORMANCE
(T
case
=+25C, Z
G
=Z
L
=50
, unless otherwise specified)
MITSUBISHI RF POWER MODULE
RA30H3340M
RA30H3340M
MITSUBISHI ELECTRIC
2 Dec 2002
5/9
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
OUTLINE DRAWING
(mm)
1 RF Input (P
in
)
2 Gate Voltage (V
GG
)
3 Drain Voltage (V
DD
)
4 RF Output (P
out
)
5 RF Ground (Case)
12.0 1
16.5 1
43.5 1
55.5 1
66.0 0.5
60.0 0.5
51.5 0.5
3.0 0.3
7.25 0.8
14.0
1
21.0
0.5
9.5
0.5
2.0 0.5
2-R2 0.5
17.0
0.5
0.45 0.15
4.0
0.3
5
1
2
3
4
3.1 +0.6/
-
0.4
7.5 0.5
2.3
0.3
(9.
8
8)
(50.4)
0.09
0.02
MITSUBISHI RF POWER MODULE
RA30H3340M
RA30H3340M
MITSUBISHI ELECTRIC
2 Dec 2002
6/9
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
1 RF Input (P
in
)
2 Gate Voltage (V
GG
)
3 Drain Voltage (V
DD
)
4 RF Output (P
out
)
5 RF Ground (Case)
C1, C2: 4700pF, 22uF in parallel
Directional
Coupler
Attenuator
Power
Meter
Spectrum
Analyzer
Signal
Generator
Attenuator
Pre-
amplifier
Power
Meter
Directional
Coupler
DUT
5
4
3
2
1
Z
G
=50
Z
L
=50
C1
C2
- +
DC Power
Supply V
GG
+ -
DC Power
Supply V
DD
TEST BLOCK DIAGRAM
Attenuator
EQUIVALENT CIRCUIT
1
5
2
3
4
MITSUBISHI RF POWER MODULE
RA30H3340M
RA30H3340M
MITSUBISHI ELECTRIC
2 Dec 2002
7/9
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
PRECAUTIONS, RECOMMENDATIONS and APPLICATION INFORMATION:
Construction:
This module consists of an alumina substrate soldered on a copper flange. For mechanical protection a plastic cap is
attached by Silicone. The MOSFET transistor chips are die bonded onto metal, wire bonded to the substrate and
coated by resin. Lines on the substrate (eventually inductors), chip capacitors and resistors form the bias and matching
circuits. Wire leads soldered onto the alumina substrate provide DC and RF connection.
Following conditions shall be avoided:
a) Bending forces on the alumina substrate (for example during srewing or by fast thermal changes)
b) Mechanical stress on the wire leads (for example by first soldering then screwing or by thermal expansion)
c) Defluxing solvents reacting with the resin coating the MOSFET chips (for example Trichlorethylene)
d) Frequent on/off switching causing thermal expansion of the resin
e) ESD, surge, overvoltage in combination with load VSWR, oscillation, etc.
ESD:
This MOSFET module is sensitive to ESD voltages down to 1000V. Appropriate ESD precautions are required.
Mounting:
The heat sink flatness shall be less than 50m (not flat heat sink or particles between module and heat sink may cause
the ceramic substrate in the module to crack by bending forces, either immediately when screwing or later when
thermal expansion forces are added).
Thermal compound between module and heat sink is recommended for low thermal contact resistance and to reduce
the bending stress on the ceramic substrate caused by temperature difference to the heat sink.
The module shall first be screwed to the heat sink, after this the leads can be soldered to the PCB.
M3 screws are recommended with tightening torque 0.4 to 0.6Nm.
Soldering and Defluxing:
This module is designed for manual soldering.
The leads shall be soldered after the module is screwed onto the heat sink.
The soldering temperature shall be lower than 260C for maximum 10 seconds, or lower than 350C for maximum 3
seconds.
Ethyl Alcohol is recommend to remove flux. Trichlorethylene type solvents must not be used (they may cause bubbles
in the coating of the transistor chips, which can lift off bond wires).
Thermal Design of the Heat Sink:
At P
out
=30W, V
DD
=12.5V and P
in
=50mW each stage transistor operating conditions are:
Stage
P
in
(W)
P
out
(W)
R
th(ch-case)
(C/W)
I
DD
@
T
=40%
(A)
V
DD
(V)
1
st
0.05
1.5
5.0
0.30
2
nd
1.5
9.0
2.4
1.50
3
rd
9.0
30.0
1.2
4.20
12.5
The channel temperatures of each stage transistor T
ch
= T
case
+ (V
DD
x I
DD
- P
out
+ P
in
) x R
th(ch-case)
are:
T
ch1
= T
case
+ (12.5V x 0.30A - 1.5W + 0.05W) x 5.0C/W
= T
case
+ 11.5 C
T
ch2
= T
case
+ (12.5V x 1.50A - 9.0W + 1.50W) x 2.4C/W
= T
case
+ 27.0 C
T
ch3
= T
case
+ (12.5V x 4.20A - 30.0W + 9.0W) x 1.2C/W
= T
case
+ 37.8 C
For long term reliability the module case temperature T
case
is better kept below 90C. For an ambient temperature
T
air
=60C and P
out
=30W the required thermal resistance R
th (case-air)
= ( T
case
- T
air
) / ( (P
out
/
T
) - P
out
+ P
in
) of the heat sink,
including the contact resistance, is:
R
th(case-air)
= (90C - 60C) / (30W/40% 30W + 0.05W) = 0.67 C/W
When mounting the module with the thermal resistance of 0.67 C/W, the channel temperature of each stage transistor
is:
T
ch1
= T
air
+ 41.5 C
T
ch2
= T
air
+ 57.0 C
T
ch3
= T
air
+ 67.8 C
175C maximum rating for the channel temperature ensures application under derated conditions.
MITSUBISHI RF POWER MODULE
RA30H3340M
RA30H3340M
MITSUBISHI ELECTRIC
2 Dec 2002
8/9
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Output Power Control:
Depending on linearity following 2 methods are recommended to control the output power:
a) Non-linear FM modulation:
By Gate voltage V
GG
.
When the Gate voltage is close to zero, the RF input signal is attenuated up to 60dB and only a small leakage
current is flowing from the battery into the Drain.
Around V
GG
=3V the output power and Drain current increases strongly.
Around V
GG
=3.5V, latest at V
GG
=5V, the nominal output power becomes available.
b) Linear AM modulation:
By RF input power P
in
.
The Gate voltage is used to set the Drain quiescent current for the required linearity.
Oscillation:
To test RF characteristic this module is put on a fixture with 2 bias decoupling capacitors each on Gate and Drain, a
4.700pF chip capacitor, located close to the module, and a 22F (or more) electrolytic capacitor.
When an amplifier circuit around this module shows oscillation following may be checked:
a) Do the bias decoupling capacitors have a low inductance pass to the case of the module ?
b) Is the load impedance Z
L
=50
?
c) Is the source impedance Z
G
=50
?
Frequent on/off switching:
In Base Stations frequent on/off switching can result in reduced or no output power, when the resin that coats the
transistor chips gets thermally expanded by the on/off switching. The bond wires in the resin will break after long time
thermally induced mechanical stress.
Quality:
MITSUBISHI ELECTRIC cannot take any liability for failures resulting from Base Station operation time or operating
conditions exceeding those in Mobile Radios.
The technology of this module is the result of more than 20 years experience, field proven in several 10 million
Mobile Radios. Today most returned modules show failures as ESD, substrate crack, transistor burn-out, etc which
are caused by handling or operating conditions. Few degradation failures can be found.
Keep safety first in your circuit
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more
reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead
to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit
designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of
non-flammable material or (iii) prevention against any malfunction or mishap.
RA30H3340M
MITSUBISHI ELECTRIC
2 Dec 2002
9/9
SALES CONTACT
JAPAN:
Mitsubishi Electric Corporation
Semiconductor Sales Promotion Department
2-2-3 Marunouchi, Chiyoda-ku
Tokyo, Japan 100
Email: sod.sophp@hq.melco.co.jp
Phone: +81-3-3218-4854
Fax:
+81-3-3218-4861
GERMANY:
Mitsubishi Electric Europe B.V.
Semiconductor
Gothaer Strasse 8
D-40880 Ratingen, Germany
Email: semis.info@meg.mee.com
Phone: +49-2102-486-0
Fax:
+49-2102-486-3670
HONG KONG:
Mitsubishi Electric Hong Kong Ltd.
Semiconductor Division
41/F. Manulife Tower, 169 Electric Road
North Point, Hong Kong
Email: scdinfo@mehk.com
Phone: +852 2510-0555
Fax:
+852 2510-9822
FRANCE:
Mitsubishi Electric Europe B.V.
Semiconductor
25 Boulevard des Bouvets
F-92741 Nanterre Cedex, France
Email: semis.info@meg.mee.com
Phone: +33-1-55685-668
Fax:
+33-1-55685-739
SINGAPORE:
Mitsubishi Electric Asia PTE Ltd
Semiconductor Division
307 Alexandra Road
#3-01/02 Mitsubishi Electric Building,
Singapore 159943
Email: semicon@asia.meap.com
Phone: +65 64 732 308
Fax:
+65 64 738 984
ITALY:
Mitsubishi Electric Europe B.V.
Semiconductor
Centro Direzionale Colleoni,
Palazzo Perseo 2, Via Paracelso
I-20041 Agrate Brianza, Milano, Italy
Email: semis.info@meg.mee.com
Phone: +39-039-6053-10
Fax:
+39-039-6053-212
TAIWAN:
Mitsubishi Electric Taiwan Company, Ltd.,
Semiconductor Department
9F, No. 88, Sec. 6
Chung Shan N. Road
Taipei, Taiwan, R.O.C.
Email: metwnssi@metwn.meap.com
Phone: +886-2-2836-5288
Fax:
+886-2-2833-9793
U.K.:
Mitsubishi Electric Europe B.V.
Semiconductor
Travellers Lane, Hatfield
Hertfordshire, AL10 8XB, England
Email: semis.info@meuk.mee.com
Phone: +44-1707-278-900
Fax:
+44-1707-278-837
U.S.A.:
Mitsubishi Electric & Electronics USA, Inc.
Electronic Device Group
1050 East Arques Avenue
Sunnyvale, CA 94085
Email: customerservice@edg.mea.com
Phone: 408-730-5900
Fax:
408-737-1129
CANADA:
Mitsubishi Electric Sales Canada, Inc.
4299 14th Avenue
Markham, Ontario, Canada L3R OJ2
Phone: 905-475-7728
Fax:
905-475-1918
AUSTRALIA:
Mitsubishi Electric Australia,
Semiconductor Division
348 Victoria Road
Rydalmere, NSW 2116
Sydney, Australia
Email: semis@meaust.meap.com
Phone: +61 2 9684-7210
+61 2 9684 7212
+61 2 9684 7214
+61 3 9262 9898
Fax:
+61 2 9684-7208
+61 2 9684 7245
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