MITSUBISHI RF POWER MOS FET
RD06HHF1
Silicon MOSFET Power Transistor 30MHz,6W
RD06HHF1
MITSUBISHI ELECTRIC
REV.1 14 May. 2003
1/6
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
DESCRIPTION
RD06HHF1 is a MOS FET type transistor specifically
designed for HF RF power amplifiers applications.
FEATURES
High power gain:
Pout>6W, Gp>16dB @Vdd=12.5V,f=30MHz
APPLICATION
For output stage of high power amplifiers in
HF band mobile radio sets.
ABSOLUTE MAXIMUM RATINGS
(Tc=25
C
UNLESS OTHERWISE NOTED)
SYMBOL PARAMETER CONDITIONS
RATINGS
UNIT
VDSS
Drain to source voltage
50
V
VGSS
Gate to source voltage
+/- 20
V
Pch Channel
dissipation Tc=25
C
34.7
W
Tj Junction
temperature
150
C
Tstg
Storage temperature
-40 to +150
C
Rth-c
Thermal resistance
Junction to case
3.6
C/W
Note 1: Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS
(Tc=25
C
, UNLESS OTHERWISE NOTED)
LIMITS UNIT
SYMBOL PARAMETER
CONDITIONS
MIN TYP MAX.
I
DSS
Zero gate voltage drain current V
DS
=17V, V
GS
=0V -
-
10
uA
I
GSS
Gate to source leak current
V
GS
=10V, V
DS
=0V -
-
1
uA
V
TH
Gate threshold Voltage
V
DS
=12V, I
DS
=1mA 1.5
-
5.5
V
Pout Output
power
V
DD
=12.5V, Pin=0.15W,
6
10
-
W
D
Drain efficiency
f=30MHz, Idq=0.5A
55
65
-
%
Load VSWR tolerance
V
DD
=15.2V,Po=6W(PinControl)
Idq=0.5A,Zg=50
Load VSWR=20:1(All Phase)
No destroy
-
Note : Above parameters , ratings , limits and conditions are subject to change.
OUTLINE DRAWING
1.3+/-0.4
0.5+0.10/-0.15
12.3MIN
4.8MAX
1.2+/-0.4
9.5MAX
5deg
4.5+/-0.5
PIN
1.Gate
2.Source
3.Drain
UNIT:mm
3.1+/-0.6
0.8+0.10/-0.15
2.5 2.5
2
1
3
9.1+/-0.7
12.3+/-0.6
3.2+/-0.4
9+/-0.4
3.6+/-0.2
2
MITSUBISHI RF POWER MOS FET
RD06HHF1
Silicon MOSFET Power Transistor 30MHz,6W
RD06HHF1
MITSUBISHI ELECTRIC
REV.1 14 May. 2003
2/6
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
TYPICAL CHARACTERISTICS
CHANNNEL DISSIPATION VS.
AMBIENT TEMPERATURE
0
10
20
30
40
50
0
40
80
120
160
200
AMBIENT TEMPERATURE Ta(C)
CHANNEL DISSIPATION
Pch(W)
Vgs-Ids CHARACTERISTICS
0
1
2
3
4
5
0
2
4
6
8
10
Vgs(V)
Ids(A)
Ta=+25C
Vds=10V
Vds VS. Crss CHARACTERISTICS
0
2
4
6
8
10
0
10
20
30
Vds(V)
Crss(pF)
Ta=+25C
f=1MHz
Vds VS. Coss CHARACTERISTICS
0
20
40
60
80
100
0
10
20
30
Vds(V)
Coss(pF)
Ta=+25C
f=1MHz
Vds VS. Ciss CHARACTERISTICS
0
10
20
30
40
50
60
0
10
20
30
Vds(V)
Ciss(pF)
Ta=+25C
f=1MHz
Vds-Ids CHARACTERISTICS
0
1
2
3
4
0
2
4
6
8
10
Vds(V)
Ids(A)
Ta=+25C
Vgs=9V
Vgs=8V
Vgs=7V
Vgs=6V
Vgs=5V
Vgs=10V
MITSUBISHI RF POWER MOS FET
RD06HHF1
Silicon MOSFET Power Transistor 30MHz,6W
RD06HHF1
MITSUBISHI ELECTRIC
REV.1 14 May. 2003
3/6
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
TYPICAL CHARACTERISTICS
Pin-Po CHARACTERISTICS
0
10
20
30
40
50
-10
0
10
20
Pin(dBm)
Po(dBm) , Gp(dB) ,
Idd(A)
0
20
40
60
80
100
d(%)
Ta=+25C
f=30MHz
Vdd=12.5V
Idq=0.5A
Po
Gp
Pin-Po CHARACTERISTICS
0
2
4
6
8
10
12
14
0.0
0.1
0.2
0.3
Pin(W)
Pout(W) , Idd(A)
30
40
50
60
70
80
90
100
d(%)
Po
d
Idd
Ta=25C
f=30MHz
Vdd=12.5V
Idq=0.5A
Vgs-Ids CHARACTERISTICS 2
0
1
2
3
4
5
0
2
4
6
8
10
Vgs(V)
Ids(A)
Vds=10V
Tc=-25~+75C
-25C
+75C
+25C
Vdd-Po CHARACTERISTICS
0
2
4
6
8
10
12
14
16
4
6
8
10
12
14
Vdd(V)
Po(W)
0
1
2
3
4
Idd(A)
Idd
Ta=25C
f=30MHz
Pin=0.15W
Idq=0.5A
Zg=ZI=50 ohm
Po
MITSUBISHI RF POWER MOS FET
RD06HHF1
Silicon MOSFET Power Transistor 30MHz,6W
RD06HHF1
MITSUBISHI ELECTRIC
REV.1 14 May. 2003
4/6
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
EQUIVALENT CIRCUIT(f=30MHz)
L4:6Turns,I.D5.6m m ,D1.0m m UEW
C2:470uF*2 in parallel
67
45
88
C2
C2
200pF
L5
100pF
1OHM
L3
220pF
0-50pF
82pF
1K OHM
L3:5Turns,I.D5.6m m ,D1.0m m UEW
L2:10Turns,I.D6m m ,D1.6m m UEW
L2
L1
8.2K OHM
65
46
18
1.5
Dim ensions:m m
RF-IN
V dd
V gg
L1:10Turns,I.D8m m ,D1.0m m UEW
330uF,50V
C1
RF-OUT
C1:100pF,0.022uF,0.1uF in parallel
Note:Board m aterial-glas s epoxi substrate
M icro strip line width= 4.2m m /50OHM ,er:2.7,t= 1.6m m
36
42
45
5
16
35
120pF
220pF
100pF
C1
C1
33uF,50V
C1
75
91
150pF
200pF
100pF
L6
85
100
L5:4Turns,I.D5.6m m ,D1.0m m UEW P= 0.5m m
82pF
30pF
100pF
L4
91
100
L6:7Turns,I.D5.6m m ,D1.0m m UEW
RD06HHF1
MITSUBISHI RF POWER MOS FET
RD06HHF1
Silicon MOSFET Power Transistor 30MHz,6W
RD06HHF1
MITSUBISHI ELECTRIC
REV.1 14 May. 2003
5/6
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD06HHF1 S-PARAMETER DATA (@Vdd=12.5V, Id=500mA)
Freq.
[MHz]
(mag)
(ang)
(mag)
(ang)
(mag)
(ang)
(mag)
(ang)
10
0.985
-18.8
34.407
165.9
0.008
76.2
0.826
-17.3
30
0.900
-50.4
30.427
143.3
0.021
59.4
0.767
-43.6
50
0.799
-74.4
24.979
126.1
0.029
43.2
0.677
-65.0
100
0.667
-109.6
15.565
100.7
0.032
27.3
0.547
-96.8
150
0.636
-129.0
10.953
85.1
0.032
23.1
0.523
-113.4
200
0.630
-140.1
8.194
73.7
0.029
25.3
0.528
-124.7
250
0.645
-148.2
6.528
63.9
0.027
34.5
0.561
-132.7
300
0.663
-155.0
5.315
55.2
0.027
49.1
0.588
-139.6
350
0.685
-160.7
4.437
47.4
0.031
61.8
0.622
-145.9
400
0.708
-165.9
3.771
39.9
0.039
71.0
0.657
-151.7
450
0.729
-170.8
3.233
33.2
0.048
75.8
0.686
-157.0
500
0.752
-175.4
2.826
26.8
0.059
77.9
0.715
-162.3
550
0.771
179.9
2.475
20.7
0.070
76.9
0.743
-167.6
600
0.789
175.4
2.186
15.2
0.083
76.1
0.763
-172.3
650
0.804
171.2
1.943
9.7
0.095
73.7
0.789
-177.3
700
0.819
166.9
1.738
4.6
0.108
71.0
0.804
178.1
750
0.834
162.6
1.560
0.0
0.120
68.1
0.820
173.5
800
0.842
158.5
1.410
-4.5
0.133
65.0
0.837
169.0
850
0.851
154.3
1.275
-8.7
0.145
61.6
0.847
164.8
900
0.859
150.3
1.160
-12.6
0.157
58.2
0.858
160.2
950
0.866
146.2
1.058
-16.9
0.167
54.5
0.869
155.7
1000
0.870
142.3
0.963
-20.0
0.179
51.0
0.876
151.8
S11
S21
S12
S22
MITSUBISHI RF POWER MOS FET
RD06HHF1
Silicon MOSFET Power Transistor 30MHz,6W
RD06HHF1
MITSUBISHI ELECTRIC
REV.1 14 May. 2003
6/6
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more
reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead
to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit
designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable
material or (iii) prevention against any malfunction or mishap.
Keep safety first in your circuit designs!
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