MITSUBISHI RF POWER MOS FET
RD07MVS1
Silicon MOSFET Power Transistor,175MHz,520MHz,7W
RD07MVS1
MITSUBISHI ELECTRIC
REV.1 14 May. 2003
1/8
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
OUTLINE DRAWING
Terminal No.
1.Drain (output)
2.Source (GND)
3.Gate (input)
UNIT:mm
4.6+/-0.05
3.5+/-0.05
2.0+/-0.05
0.9+/-0.1
4.9+/-0.15
LASER MARK
(Gate)
6.0+/-0.15
2
3
1
DESCRIPTION
RD07MVS1 is a MOS FET type transistor
specifically designed for VHF/UHF RF
power amplifiers applications.
FEATURES
High power gain:
Pout>7W, Gp>10dB@Vdd=7.2V,f=520MHz
High Efficiency: 60%typ. (175MHz)
High Efficiency: 55%typ. (520MHz)
APPLICATION
For output stage of high power amplifiers in
VHF/UHF band mobile radio sets.
ABSOLUTE MAXIMUM RATINGS
(Tc=25
C
UNLESS OTHERWISE NOTED)
SYMBOL PARAMETER
CONDITIONS
RATINGS
UNIT
VDSS
Drain to source voltage
30
V
VGSS
Gate to source voltage
+/- 20
V
Pch Channel
dissipation Tc=25
C
50
W
Tj Junction
Temperature
150
C
Tstg
Storage temperature
-40 to +125
C
Rthj-c
Thermal resistance
Junction to case
2.5
C/W
Note 1: Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS
(Tc=25
C
, UNLESS OTHERWISE NOTED)
LIMITS UNIT
SYMBOL PARAMETER
CONDITIONS
MIN TYP MAX.
I
DSS
Zero gate voltage drain current V
DS
=17V, V
GS
=0V -
-
200
uA
I
GSS
Gate to source leak current
V
GS
=10V, V
DS
=0V -
-
1
uA
V
TH
Gate threshold Voltage
V
DS
=12V, I
DS
=1mA 1.4
1.9
2.4
V
Pout1
Output power
f=175MHz , V
DD
=7.2V
7 8 - W
D1
Drain efficiency
Pin=0.3W,Idq=700mA
55
60
-
%
Pout2
Output power
f=520MHz , V
DD
=7.2V
7 8 - W
D2
Drain efficiency
Pin=0.7W,Idq=750mA
50
55
-
%
Load VSWR tolerance
V
DD
=9.2V,Po=7W(PinControl)
f=175MHz,Idq=700mA,Zg=50
Load VSWR=20:1(All Phase)
No destroy
-
Load VSWR tolerance
V
DD
=9.2V,Po=7W(PinControl)
f=520MHz,Idq=750mA,Zg=50
Load VSWR=20:1(All Phase)
No destroy
-
Note : Above parameters , ratings , limits and conditions are subject to change.
MITSUBISHI RF POWER MOS FET
RD07MVS1
Silicon MOSFET Power Transistor,175MHz,520MHz,7W
RD07MVS1
MITSUBISHI ELECTRIC
REV.1 14 May. 2003
2/8
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
TYPICAL CHARACTERISTICS
DRAIN DISSIPATION VS.
AMBIENT TEMPERATURE
0
10
20
30
40
50
60
0
40
80
120
160
200
AMBIENT TEMPERATURE Ta(C)
CHANNEL DISSIPATION
Pch(W)
On PCB(*1)
On PCB(*1) with Heat-sink
*1:The material of the PCB
Glass epoxy (t=0.6 mm)
Vgs-Ids CHARACTERISTICS
0.0
2.0
4.0
6.0
8.0
10.0
0
1
2
3
4
5
Vgs(V)
Ids(A)
Ta=+25C
Vds=10V
Vds VS. Crss CHARACTERISTICS
0
2
4
6
8
10
12
14
16
18
20
0
5
10
15
20
Vds(V)
Crss(pF)
Ta=+25C
f=1MHz
Vds VS. Ciss CHARACTERISTICS
0
20
40
60
80
100
120
140
160
0
5
10
15
20
Vds(V)
Ciss(pF)
Ta=+25C
f=1MHz
Vds VS. Coss CHARACTERISTICS
0
20
40
60
80
100
120
0
5
10
15
20
Vds(V)
Coss(pF)
Ta=+25C
f=1MHz
Vds-Ids CHARACTERISTICS
0
1
2
3
4
5
6
7
8
9
10
0
2
4
6
8
10
Vds(V)
Ids(A)
Ta=+25C
Vgs=5.5V
Vgs=4.5V
Vgs=3V
Vgs=3.5V
Vgs=4V
Vgs=5V
MITSUBISHI RF POWER MOS FET
RD07MVS1
Silicon MOSFET Power Transistor,175MHz,520MHz,7W
RD07MVS1
MITSUBISHI ELECTRIC
REV.1 14 May. 2003
3/8
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
TYPICAL CHARACTERISTICS
Pin-Po CHARACTERISTICS
@f=175MHz
0
10
20
30
40
-5
0
5
10 15 20 25 30
Pin(dBm)
Po(dBm) , Gp(dB) ,
Idd(A)
0
20
40
60
80
d(%)
Ta=+25C
f=175MHz
Vdd=7.2V
Idq=700mA
Po
Gp
Pin-Po CHARACTERISTICS
@f=175MHz
0.0
2.0
4.0
6.0
8.0
10.0
12.0
0
500
1000
Pin(mW)
Pout(W) , Idd(A)
20
40
60
80
100
d(%)
Po
d
Idd
Ta=25C
f=175MHz
Vdd=7.2V
Idq=700mA
Vdd-Po CHARACTERISTICS
@f=175MHz
0
5
10
15
20
25
30
4
6
8
10
12
14
Vdd(V)
Po(W)
0
1
2
3
4
5
6
Idd(A)
Po
Idd
Ta=25C
f=175MHz
Pin=0.3W
Icq=700mA
Zg=ZI=50 ohm
Pin-Po CHARACTERISTICS
@f=520MHz
0
10
20
30
40
0
5
10 15 20 25 30 35
Pin(dBm)
Po(dBm) , Gp(dB) ,
Idd(A)
0
20
40
60
80
d(%)
Ta=+25C
f=520MHz
Vdd=7.2V
Idq=750mA
Po
Gp
Pin-Po CHARACTERISTICS
@f=520MHz
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
Pin(W)
Pout(W) , Idd(A)
30
40
50
60
70
80
90
100
d(%)
Po
d
Idd
Ta=25C
f=520MHz
Vdd=7.2V
Idq=750mA
Vdd-Po CHARACTERISTICS
@f=520MHz
0
5
10
15
20
25
4
6
8
10
12
14
Vdd(V)
Po(W)
0
1
2
3
4
5
Idd(A)
Po
Idd
Ta=25C
f=520MHz
Pin=0.7W
Icq=750mA
Zg=ZI=50 ohm
MITSUBISHI RF POWER MOS FET
RD07MVS1
Silicon MOSFET Power Transistor,175MHz,520MHz,7W
RD07MVS1
MITSUBISHI ELECTRIC
REV.1 14 May. 2003
4/8
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
TYPICAL CHARACTERISTICS
Vgs-Ids CHARACTERISTICS 2
0
2
4
6
8
10
2
3
4
5
Vgs(V)
Ids(A)
Vds=10V
Tc=-25~+75C
-25C
+75C
+25C
MITSUBISHI RF POWER MOS FET
RD07MVS1
Silicon MOSFET Power Transistor,175MHz,520MHz,7W
RD07MVS1
MITSUBISHI ELECTRIC
REV.1 14 May. 2003
5/8
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
EQUIVALENT CIRCUIT(f=175MHz)
EQUIVALENT CIRCUIT(f=520MHz)
W
W
R D07MVS 1
10m m
3m m
16pF
140pF
24.5m m
19.5m m
62pF
R F-in
62pF
Vdd
Vgg
19m m
4.7kOHM
100pF
28.5m m
6.5m m
11.5m m
1m m 11.5m m
10uF,50V
C 2
C 1
L
R F-out
68O HM
180pF
19m m
56pF
W :line width=1.0m m
L: Enam eled wire 7Turns,D :0.43m m ,2.4 6mm O .D
C 1,C 2:1000pF,0.022uF in parallel
Note:B oard m aterial- Teflon substrate
Micro strip line width=2.2m m /50OHM,er:2.7,t=0.8m m
175MHz
5m m
3.5m m
5m m
22pF
22pF
520MHz
Micro strip line width=2.2mm /50OHM,er:2.7,t=0.8mm
Note:Board m aterial- Teflon substrate
C1,C 2:1000pF,0.022uF in parallel
L: Enameled wire 5Turns,D:0.43mm ,2.46mm O.D
W :ine width=1.0m m
6pF
19m m
RF-out
L
C1
C2
10uF,50V
3.5mm
9mm
3.5mm
6.5mm
44.5mm
10pF
4.7kO HM
19m m
Vgg
Vdd
68pF
RF-in
68pF
46m m
37pF
20pF
3.5mm
6.5mm
RD07MVS1
W
W
20pF
18pF
MITSUBISHI RF POWER MOS FET
RD07MVS1
Silicon MOSFET Power Transistor,175MHz,520MHz,7W
RD07MVS1
MITSUBISHI ELECTRIC
REV.1 14 May. 2003
6/8
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
INPUT/OUTPUT IMPEDANCE VS. FREQUENCY CHARACTERISTICS
175MHz Zin*
175MHz Zout*
175MHz Zin* Zout*
Zo=10
Vdd=7.2V, Idq=700mA(Vgg adj.),Pin=0.28W
Zin*=1.55+j5.53
Zout*=3.24-j0.26
Zin*: Complex conjugate of input impedance
Zout*: Complex conjugate of input impedance
520MHz Zin* Zout*
Zo=50
Vdd=7.2V, Idq=750mA(Vgg adj.),Pin=0.7W
Zin*=0.76+j0.06
Zout*=1.61-j0.52
Zin*: Complex conjugate of input impedance
Zout*: Complex conjugate of input impedance
520MHz Zin*
520MHz Zout*
MITSUBISHI RF POWER MOS FET
RD07MVS1
Silicon MOSFET Power Transistor,175MHz,520MHz,7W
RD07MVS1
MITSUBISHI ELECTRIC
REV.1 14 May. 2003
7/8
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD07MVS1 S-PARAMETER DATA (@Vdd=7.2V, Id=100mA)
Freq.
[MHz]
(mag)
(ang)
(mag)
(ang)
(mag)
(ang)
(mag)
(ang)
100
0.890
-174.1
5.508
82.1
0.016
-3.6
0.790
-172.8
150
0.897
-175.6
3.613
75.0
0.015
-8.5
0.801
-174.0
175
0.899
-176.0
3.028
72.4
0.015
-9.6
0.802
-174.1
200
0.901
-176.3
2.604
70.1
0.014
-10.9
0.815
-174.0
250
0.907
-176.7
2.019
65.6
0.014
-12.7
0.844
-174.1
300
0.913
-177.0
1.614
60.7
0.012
-15.3
0.843
-174.1
350
0.918
-177.3
1.308
57.1
0.011
-15.8
0.860
-174.4
400
0.924
-177.8
1.102
54.1
0.010
-14.2
0.879
-175.0
450
0.928
-178.0
0.929
50.1
0.009
-14.8
0.882
-175.1
500
0.933
-178.3
0.790
48.6
0.008
-9.6
0.895
-175.5
520
0.935
-178.5
0.753
47.6
0.007
-7.7
0.901
-175.8
550
0.937
-178.8
0.692
45.3
0.007
-5.6
0.906
-176.2
600
0.940
-179.2
0.595
43.6
0.006
0.4
0.907
-176.6
650
0.942
-179.4
0.529
42.4
0.006
17.1
0.916
-177.2
700
0.944
-179.8
0.467
40.2
0.005
21.8
0.923
-177.6
750
0.947
179.8
0.416
39.4
0.005
40.9
0.921
-178.0
800
0.948
179.4
0.374
38.6
0.004
52.0
0.930
-178.8
850
0.949
179.0
0.343
37.6
0.005
67.1
0.933
-178.9
900
0.951
178.6
0.304
36.5
0.005
72.6
0.932
-179.3
950
0.951
178.2
0.284
37.6
0.006
85.8
0.937
179.8
1000
0.952
177.9
0.262
35.1
0.007
85.1
0.938
179.7
1050
0.950
177.4
0.234
36.0
0.008
89.8
0.938
179.3
1100
0.952
176.9
0.226
35.8
0.009
93.4
0.940
178.2
S11
S21
S12
S22
RD07MVS1 S-PARAMETER DATA (@Vdd=12.5V, Id=100mA)
Freq.
[MHz]
(mag)
(ang)
(mag)
(ang)
(mag)
(ang)
(mag)
(ang)
100
0.883
-172.1
6.013
81.0
0.017
-5.3
0.748
-170.4
150
0.891
-174.1
3.914
72.8
0.016
-10.7
0.765
-171.4
175
0.894
-174.6
3.269
69.8
0.016
-13.1
0.769
-171.4
200
0.897
-175.0
2.798
67.2
0.015
-14.9
0.786
-171.3
250
0.906
-175.6
2.144
62.1
0.014
-18.3
0.822
-171.4
300
0.914
-176.0
1.697
56.9
0.012
-20.4
0.828
-171.6
350
0.920
-176.4
1.361
53.0
0.011
-21.6
0.848
-172.0
400
0.927
-177.0
1.134
49.9
0.010
-21.2
0.871
-172.9
450
0.932
-177.4
0.949
45.8
0.009
-21.8
0.876
-173.2
500
0.937
-177.8
0.800
44.2
0.007
-16.9
0.892
-173.7
520
0.938
-178.0
0.761
43.2
0.007
-16.0
0.898
-174.1
550
0.940
-178.3
0.697
41.1
0.006
-13.3
0.904
-174.6
600
0.944
-178.8
0.594
39.3
0.005
-7.2
0.906
-175.1
650
0.946
-179.1
0.527
38.2
0.004
4.5
0.917
-175.9
700
0.948
-179.5
0.464
36.1
0.004
17.4
0.924
-176.3
750
0.950
-179.9
0.412
35.5
0.004
28.0
0.922
-176.9
800
0.951
179.6
0.368
34.5
0.004
56.9
0.931
-177.8
850
0.953
179.2
0.336
33.6
0.004
66.4
0.934
-178.0
900
0.954
178.8
0.297
32.3
0.005
78.3
0.933
-178.3
950
0.954
178.4
0.276
33.8
0.006
87.4
0.939
-179.4
1000
0.954
178.0
0.254
31.1
0.006
90.9
0.941
-179.5
1050
0.952
177.5
0.226
32.2
0.007
94.7
0.940
-179.9
1100
0.954
177.0
0.219
32.0
0.008
98.0
0.943
178.9
S11
S21
S12
S22
MITSUBISHI RF POWER MOS FET
RD07MVS1
Silicon MOSFET Power Transistor,175MHz,520MHz,7W
RD07MVS1
MITSUBISHI ELECTRIC
REV.1 14 May. 2003
8/8
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more
reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead
to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit
designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable
material or (iii) prevention against any malfunction or mishap.
Keep safety first in your circuit designs!
PDF 
ZIP