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Электронный компонент: RD20HMF1

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MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
RD20HMF1
RoHS Compliance, Silicon MOSFET Power Transistor,900MHz,20W
RD20HMF1
MITSUBISHI ELECTRIC
10 Jan 2006
OBSERVE HANDLING PRECAUTIONS
DESCRIPTION
RD20HMF1 is a MOS FET type transistor specifically
designed for 900MHz-band RF power amplifiers
applications.

FEATURES
High power gain:
Pout>20W, Gp>8.2dB @Vdd=12.5V,f=900MHz
High Efficiency: 55%typ.

APPLICATION
For output stage of high power amplifiers in 900MHz band
OUTLINE DRAWING
14.0+/-0.4
3.0+/-0.4
5.1+/-0.5
R1.6
2.3+/-0.3
4-C1
2
6.6+/-0.3
0.10
2.8+/-0.3
3
18.0+/-0.3
22.0+/-0.3
7.6+/-0.3
1
7.2+/-0.5
PIN
1.Drain
2.Source
3.Gate
UNIT:mm
Mobile radio sets.

RoHS COMPLIANT
RD20HMF1-101 is a RoHS compliant products.
RoHS compliance is indicate by the letter "G" after
the Lot Marking.
ABSOLUTE MAXIMUM RATINGS
(Tc=25
C
UNLESS OTHERWISE NOTED)
SYMBOL PARAMETER CONDITIONS
RATINGS
UNIT
V
DSS
Drain to source voltage
Vgs=0V
30
V
V
GSS
Gate to source voltage
Vds=0V
+/-20
V
Pch Channel
dissipation Tc=25
C
71.4
W
Pin Input
power
Zg=Zl=50
6
W
ID Drain
current
-
6
A
Tch Channel
temperature
-
175
C
Tstg
Storage temperature
-
-40 to +175
C
Rth j-c
Thermal resistance
junction to case
2.1
C/W
Note 1: Above parameters are guaranteed independently.


ELECTRICAL CHARACTERISTICS (Tc=25
C
, UNLESS OTHERWISE NOTED)
LIMITS UNIT
SYMBOL PARAMETER
CONDITIONS
MIN
TYP MAX.
I
DSS
Zero gate voltage drain current V
DS
=17V, V
GS
=0V -
-
5
uA
I
GSS
Gate to source leak current
V
GS
=10V, V
DS
=0V -
-
1
uA
V
TH
Gate threshold voltage
V
DS
=12V, I
DS
=1mA 1.0
-
3.0
V
Pout
Output power
f=900MHz ,V
DD
=12.5V 20
25
-
W
D
Drain efficiency
Pin=3.0W, Idq=1.0A
50
55
-
%
Load VSWR tolerance
V
DD
=15.2V,Po=20W(PinControl)
Idq=1.0A,Zg=50
Load VSWR=20:1(All Phase)
No destroy
-
Note : Above parameters , ratings , limits and conditions are subject to change.
1/7
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
RD20HMF1
RoHS Compliance, Silicon MOSFET Power Transistor,900MHz,20W
RD20HMF1
MITSUBISHI ELECTRIC
10 Jan 2006
OBSERVE HANDLING PRECAUTIONS
TYPICAL CHARACTERISTICS
CHANNNEL DISSIPATION VS.
AMBIENT TEMPERATURE
0
20
40
60
80
100
0
40
80
120
160
200
AMBIENT TEMPERATURE Ta(C)
CHA
NNE
L
DI
S
S
I
P
A
T
I
O
N P
c
h
(
W
)
Vds-Ids CHARACTERISTICS
0
2
4
6
8
10
0
2
4
6
8
10
Vds(V)
Ids
(
A
)
Ta=+25C
Vgs=4.5V
Vgs=4V
Vgs=3.5V
Vgs=3V
Vgs=2.5V
Vgs=2V
Vgs=5V
Vds VS. Ciss CHARACTERISTICS
0
20
40
60
80
100
0
5
10
15
20
Vds(V)
Ci
s
s
(
p
F
)
Ta=+25C
f=1MHz
Vds VS. Coss CHARACTERISTICS
0
20
40
60
80
100
120
140
0
5
10
15
20
Vds(V)
Co
s
s
(
p
F
)
Ta=+25C
f=1MHz
Vds VS. Crss CHARACTERISTICS
0
2
4
6
8
10
12
14
0
5
10
15
20
Vds(V)
Cr
s
s
(
p
F
)
Ta=+25C
f=1MHz
Vgs-Ids CHARACTERISTICS
0
2
4
6
8
10
0
1
2
3
4
5
Vgs(V)
Id
s
(
A
)
Ta=+25C
Vds=10V
2/7
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
RD20HMF1
RoHS Compliance, Silicon MOSFET Power Transistor,900MHz,20W
RD20HMF1
MITSUBISHI ELECTRIC
10 Jan 2006
OBSERVE HANDLING PRECAUTIONS
TYPICAL CHARACTERISTICS
Pin-Po CHARACTERISTICS
0
10
20
30
40
50
20
25
30
35
40
Pin(dBm)
P
o
(d
B
m
) ,
G
p
(d
B
)
,

I
d
d
(
A
)
0
20
40
60
80
100

d(
%
)
Ta=+25C
f=900MHz
Vdd=12.5V
Idq=1.0A
Po
Gp
Vdd-Po CHARACTERISTICS
0
5
10
15
20
25
30
35
4
6
8
10
12
14
Vdd(V)
Po
(
W
)
0
1
2
3
4
5
6
7
Idd(
A
)
Po
Idd
Ta=25C
f=900MHz
Pin=3.0W
Idq=1.0A
Zg=ZI=50 ohm
Pin-Po CHARACTERISTICS
0
5
10
15
20
25
30
0
1
2
3
4
5
6
Pin(W)
P
out(
W
)
,
I
dd(
A
)
0
20
40
60
80
100
120


d(
%
)
Po
d
Idd
Ta=25C
f=900MHz
Vdd=12.5V
Idq=1.0A
3/7
MITSUBISHI RF POWER MOS FET
RD20HMF1
RoHS Compliance, Silicon MOSFET Power Transistor,900MHz,20W
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
TEST CIRCUIT(f=900MHz)
22F,50V
L2:1Turns,I.D3mm,D1.5mm silver plateted copper wire
6pF
6pF
5pF
5pF
90
17
38
2pF
6pF
10.8
4.8
8
C2
17
11
8
100
90
micro strip line width=4.2mm/50OHM,er:2.7,t=1.6mm
Note:Board material-Teflon substrate
C1:1000pF,22000pF in parallel
RF-OUT
C1
L1:1Turns,I.D3mm,D1.5mm silver plateted copper wire
Vgg
Vdd
RF-in
82pF
Dimensions:mm
8pF
9pF
82pF
15
53
100
4.7OHM
L1
C2:100pF*2 in parallel
C3
C3:1000pF,22000pF in parallel
L2
900MHz
RD20HMF1




























RD20HMF1
MITSUBISHI ELECTRIC
10 Jan 2006
4/7
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
RD20HMF1
RoHS Compliance, Silicon MOSFET Power Transistor,900MHz,20W
RD20HMF1
MITSUBISHI ELECTRIC
10 Jan 2006
OBSERVE HANDLING PRECAUTIONS
INPUT/OUTPUT IMPEDANCE VS.FREQUENCY CHARACTERISTICS
f=900MHz Zout
f=900MHz Zin
Zo=10
Zin , Zout
f Zin Zout
(MHz) (ohm) (ohm)
Conditions
900 1.78+j2.50
2.52+j1.76
Po=20W, Vdd=12.5V,Pin=3W
5/7
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
RD20HMF1
RoHS Compliance, Silicon MOSFET Power Transistor,900MHz,20W
RD20HMF1
MITSUBISHI ELECTRIC
10 Jan 2006
OBSERVE HANDLING PRECAUTIONS
RD20HMF1 S-PARAMETER DATA (@Vdd=12.5V,Id=800mA)
Freq
[MHz]
(mag)
(ang)
(mag)
(ang)
(mag)
(ang)
(mag)
(ang)
100
0.862
-168.4
8.814
83.5
0.016
-4.3
0.798
-172.5
200
0.868
-173.3
4.213
70.7
0.014
-10.9
0.813
-173.9
300
0.872
-174.8
2.614
60.4
0.012
-11.0
0.834
-174.6
400
0.882
-174.8
1.820
52.2
0.011
-16.2
0.856
-174.8
500
0.897
-176.1
1.343
44.6
0.009
-12.5
0.876
-175.6
600
0.912
-176.8
1.028
38.7
0.007
-5.3
0.887
-175.6
700
0.917
-177.8
0.812
33.5
0.006
7.6
0.907
-176.6
800
0.926
-178.6
0.663
29.4
0.005
25.8
0.920
-177.9
900
0.934
-179.3
0.560
25.9
0.006
43.8
0.930
-178.6
1000
0.947
179.5
0.482
23.0
0.007
54.0
0.941
-179.0
1100
0.953
178.6
0.421
19.7
0.008
62.2
0.947
-179.9
1200
0.959
177.2
0.358
16.8
0.009
68.5
0.950
179.3
1300
0.962
176.4
0.320
14.3
0.011
70.8
0.949
178.5
1400
0.966
174.8
0.292
12.3
0.013
75.6
0.951
177.8
1500
0.965
173.6
0.269
10.2
0.015
74.7
0.954
176.7
1600
0.963
172.0
0.244
8.1
0.016
75.4
0.944
175.4
1700
0.958
170.4
0.222
6.2
0.018
76.9
0.946
174.7
1800
0.956
168.8
0.202
3.8
0.020
74.8
0.949
173.2
1900
0.955
166.9
0.186
1.9
0.022
74.8
0.945
171.8
2000
0.953
165.2
0.177
0.3
0.024
73.3
0.947
170.1
2100
0.954
163.2
0.168
-2.0
0.026
74.1
0.945
168.6
2200
0.954
160.9
0.160
-3.6
0.028
71.7
0.945
166.9
2300
0.956
159.0
0.151
-6.2
0.030
70.0
0.943
164.7
2400
0.951
156.6
0.139
-8.1
0.032
67.4
0.935
162.6
2500
0.954
154.8
0.129
-10.0
0.034
65.4
0.935
160.4
2600
0.946
152.6
0.124
-12.1
0.037
63.6
0.936
158.0
2700
0.949
150.4
0.114
-13.3
0.039
60.1
0.934
155.2
2800
0.942
148.1
0.105
-13.0
0.040
56.5
0.933
152.4
2900
0.946
146.1
0.099
-12.1
0.041
54.0
0.932
149.9
3000
0.938
144.1
0.094
-10.3
0.044
51.0
0.931
147.2
S11
S21
S12
S22
6/7
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
RD20HMF1
RoHS Compliance, Silicon MOSFET Power Transistor,900MHz,20W
RD20HMF1
MITSUBISHI ELECTRIC
10 Jan 2006
OBSERVE HANDLING PRECAUTIONS
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more
reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to
personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit
designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable
material or (iii) prevention against any malfunction or mishap.
Keep safety first in your circuit designs!
7/7