ChipFind - документация

Электронный компонент: RM60SZ-6S

Скачать:  PDF   ZIP
Feb.1999
MITSUBISHI DIODE MODULES
RM60SZ-6S,-6R
MEDIUM POWER GENERAL USE
NON-INSULATED TYPE
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
APPLICATION
Welders
RM60SZ-6S,6R
I
F(AV)
Average forward current ............ 60A
V
RRM
Repetitive peak reverse voltage
....................... 300V
TRIPLE ARMS
Non-Insulated Type
93.5
80
2
6.5
12.5
26
17.5
20
20
3M5
6.5
21
30
A
1
(S)
SR
1
A
(R)
LABEL
SR
2
SR
3
A
2
A
3
SR
1
SR
2
SR
3
K
1
K
2
K
3
K
Feb.1999
ABSOLUTE MAXIMUM RATINGS
Unit
V
V
V
MITSUBISHI DIODE MODULES
RM60SZ-6S,-6R
MEDIUM POWER GENERAL USE
INSULATED TYPE
6
300
400
240
Symbol
V
RRM
V
RSM
VR
(DC)
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Reverse DC voltage
Voltage class
Unit
A
A
A
A
2
s
Hz
C
C
Nm
kgcm
Nm
kgcm
g
Conditions
Three-phase, half wave average current, T
C
=110
C
One half cycle at 60Hz, peak value
Value for one cycle of surge current
Main terminal screw M5
Mounting screw M6
Typical value
Ratings
95
60
1200
6.0
10
3
1000
40~150
40~125
1.47~1.96
15~20
1.96~2.94
20~30
130
Symbol
IF
(RMS)
IF
(AV)
I
FSM
I
2t
f
T
j
T
stg
--
--
Parameter
RMS forward current
Average forward current
Surge (non-repetitive) forward current
I
2t
for fusing
Maximum operating frequency
Junction temperature
Storage temperature
Mounting torque
Weight
Unit
mA
V
C/ W
C/ W
Limits
Symbol
I
RRM
V
FM
R
th (j-c)
R
th (c-f)
Parameter
Repetitive reverse current
Forward voltage
Thermal resistance
Contact thermal resistance
Min.
--
--
--
--
Typ.
--
--
--
--
Max.
1.5
1.2
0.3
0.25
ELECTRICAL CHARACTERISTICS
Test conditions
T
j
=150
C, V
RRM
applied
T
j
=25
C, I
FM
=200A, instantaneous meas.
Junction to case (per 1/3 module)
Case to fin, conductive grease applied (per 1/3 module)
Feb.1999
MITSUBISHI DIODE MODULES
RM60SZ-6S,-6R
MEDIUM POWER GENERAL USE
NON-INSULATED TYPE
PERFORMANCE CURVES
MAXIMUM FORWARD CHARACTERISTIC
ALLOWABLE SURGE
(NON-REPETITIVE) FORWARD CURRENT
FOR
W
ARD CURRENT (A)
CONDUCTION TIME
(CYCLES AT 60Hz)
FORWARD VOLTAGE DROP (V)
MAXIMUM TRANSIENT THERMAL IMPEDANCE
(JUNCTION TO CASE)
MAXIMUM POWER DISSIPATION
TIME (s)
AVERAGE FORWARD CURRENT (A)
ALLOWABLE CASE TEMPERATURE
VS. AVERAGE FORWARD CURRENT
CASE TEMPERA
TURE (
C)
AVERAGE FORWARD CURRENT (A)
TRANSIENT THERMAL IMPEDANCE
(
C/
W)
SURGE (NON-REPETITIVE)
FOR
W
ARD CURRENT (A)
POWER DISSIP
A
TION (W)
3
10
2
10
1
10
0
10
1
10
0
10
3
10
2
10
1
10
0
10
70
50
30
20
7
5
3
2
0
200
1600
10
1
100
400
600
800
1000
1200
1400
7
5
3
2
7
5
3
2
7
5
3
2
0.40
0
7
5
3
2
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.8
7
5
3
2
7
5
3
2
7
5
3
2
1.0
1.6
1.4
1.2
T
j
=25C
80
0
0
60
80
20
20
40
60
40
160
60
0
60
80
20
80
40
100
120
140
RESISTIVE, INDUCTIVE LOAD
RESISTIVE, INDUCTIVE LOAD