Feb.1999
MITSUBISHI SEMICONDUCTOR
HIGH-SPEED SWITCHING THYRISTOR ARRAY
SA01, SA02, SA04, SA07
THYRISTOR ARRAY
SA SERIES FOR STROBE FLASHER
SA01, SA02, SA04, SA07
APPLICATION
Automatic strobe flasher
Symbol
V
DRM
V
1
V
DSM
V
1
V
RRM
I
FGM
T
opr
T
stg
Parameter
Repetitive peak off-state voltage
Non-repetitive peak off-state voltage
Repetitive peak reverse voltage
Pulse current ability
Peak gate forward current
Operating ambient temperature
Storage temperature
Unit
V
V
V
A
A
C
C
Main
400
400
See electrical characteristics
20 ~ +60
40 ~ +125
SA01
Main
Aux
SA02
SA04
SA07
Aux
480
600
480
600
480
600
450
600
0.5
0.3
0.5
1.0
1.0
0.5
0.3
1.0
MAXIMUM RATINGS
(T
a
= 20 ~ +60
C, unless otherwise noted)
1
2
3
4
5
MAIN THYRISTOR: ANODE
MAIN THYRISTOR: GATE
MAIN AND AUX. THYRISTOR: CATHODE
AUX. THYRISTOR: GATE
AUX. THYRISTOR: ANODE
OUTLINE DRAWING
Dimensions
in mm
2
1
15
2
4
3 = 12
+0.5
0
8 MAX
10 MAX
3
MIN
1
0.5
3
1
0.5
1
4 MAX
3
4
5
5
2
4
3
SA SERIES
1
FAMILY CONSTITUTION
Application
Compact strobe
Middle class strobe
Built-in strobe
Commutating characteristics
C
M
=700
F, I
TM
=200A,
C
C
=2.2
F
C
M
=1000
F, I
TM
=230A,
C
C
=2.5
F
C
M
=700
F, I
TM
=200A,
C
C
=1.4
F
Guide No.
(ASA100)
25
32
25
Type
SA01
SA02
SA04
SA07
Aux thyristor
High sensitive I
GT
=
250
A
High holding current I
H
25mA
High holding current I
H
25mA
High sensitive I
GT
250
A
Main
Aux
Main
Aux
V
1. Connect 1k
resistor between gate to cathode.
Feb.1999
MITSUBISHI SEMICONDUCTOR
HIGH-SPEED SWITCHING THYRISTOR ARRAY
SA01, SA02, SA04, SA07
THYRISTOR ARRAY
SA SERIES FOR STROBE FLASHER
Symbol
I
DRM
I
RRM
I
GT
V
GT
I
H
Unit
A
A
mA
V
mA
V
1. Connect 1k
resistor between gate to cathode.
V
2. Minimum value
SA01
SA02
SA04
SA07
Main
100
100
30
1.5
--
Aux
20
20
0.25
1.0
1.0
Parameter
Repetitive peak off-state current
V
1
Repetitive peak reverse current
Gate trigger current
Gate trigger voltage
Holding current
V
2
ELECTRICAL CHARACTERISTICS
(T
a
=25
C, unless otherwise noted)
Main
100
100
30
1.5
--
Aux
100
100
30
1.5
25
Main
100
100
50
2.0
--
Aux
100
100
30
1.5
25
Main
100
100
80
1.5
--
Aux
20
20
0.25
1.0
1.0
47n
C
C
trg
22k
i1
i5
iG
1k
L
C
M
V
CM
+
-
10k
10
470 470
SR1FM
10n
1
5
2
4
3
1
2
3
4
5
2
1
5
4
2
3
0
IP
trg
0
0
0
iG
i1
i5
iG
tw
t
t
t
t
SAOX
SA120
AUX THYRISTOR
MAIN THYRISTOR
47n
Fig. 1 Test circuit
Fig. 3 Pin position and Equivalent circuit
Fig. 2 The voltage and current waveforms
Feb.1999
MITSUBISHI SEMICONDUCTOR
HIGH-SPEED SWITCHING THYRISTOR ARRAY
SA01, SA02, SA04, SA07
THYRISTOR ARRAY
SA SERIES FOR STROBE FLASHER
10
1
10
3
7
5
3
2
20
0
20
10
2
7
5
3
2
40
60
80
4
4
10
30
50
70
10
MAIN THYRISTOR
SA02,04
AUX THYRISTOR
SA01,07
AUX THYRISTOR
TYPICAL EXAMPLE
0.6
0.4
0.2
0
0.2
0.4
80
30
10
20
0
10 20
40 50 60 70
0.5
0.3
0.1
0.1
0.3
TYPICAL EXAMPLE
MAIN THYRISTOR
AUX THYRISTOR
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (C)
100 (%)
GATE TRIGGER CURRENT
( T
j
=
t
C
)
GATE TRIGGER CURRENT
( T
j
=
25
C
)
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (C)
100 (%)
GATE TRIGGER VOLTAGE
( T
j
=
t
C
)
GATE TRIGGER VOLTAGE
( T
j
=
25
C
)
COMMUTATION CHARACTERISTICS IN STROBE APPLICATION
SA series commutates at arbitrary conducting duration t
w
under following condition. (See Fig. 1, 2)
Please confer following sheets in case that C
M
or I
TM
is different from mentioned value. (See shown under)
COMMUTATING CHARACTERISTICS
(T
a
=25
C, Single pulse operation)
SA01
SA02
SA04
350
1000
230
25
2.5
Unit
V
F
A
H
F
SA07
700
200
1.4
700
200
2.2
Parameter
Main capacitor charging voltage
Main capacitor
Peak on-state current
Anode reactor
Commutating capacitor
Symbol
V
CM
C
M
I
TM
L
C
C
NOTICE
Please consider counterplans against induced noise across common impedance. (between common cathode 3 and the ground point of trigger
cicuit for the auxiliary thyristor)
PERFORMANCE CURVES
Feb.1999
MITSUBISHI SEMICONDUCTOR
HIGH-SPEED SWITCHING THYRISTOR ARRAY
SA01, SA02, SA04, SA07
THYRISTOR ARRAY
SA SERIES FOR STROBE FLASHER
1000
800
600
400
200
0
220
120
140
160
180
200
C
C
= 0.8
F
C
C
= 0.9
F
C
C
= 1.0
F
C
C
= 1.1
F
C
C
= 1.2
F
C
C
= 1.3
F
C
C
= 1.4
F
C
C
= 1.5
F
1000
800
600
400
200
0
220
120
140
160
180
200
C
C
= 1.8
F
C
C
= 1.9
F
C
C
= 2.0
F
C
C
= 2.1
F
C
C
= 2.2
F
C
C
= 2.3
F
C
C
= 1.7
F
V
CM
= 350V T
a
= 25C
L = 25H SEE FIG.1
1.8
1.6
1.4
1.2
1.0
0.8
100
50
10
0
20 30 40
60 70 80 90
1.7
1.5
1.3
1.1
0.9
TYPICAL EXAMPLE
10
1
10
3
7
5
3
2
20
0
20
10
2
7
5
3
2
40
60
80
4
4
10
10
30
50
70
TYPICAL EXAMPLE
SA01,07 AUX THYRISTOR
SA02,04 AUX THYRISTOR
10
2
2 3
10
0
5 7 10
1
2 3 5 7 10
2
2 3 5 7 10
3
10
4
7
5
3
2
10
3
7
5
3
2
7
5
3
2
10
1
TYPICAL EXAMPLE
MAIN
THYRISTOR
SA01,07 AUX THYRISTOR
SA02,04 AUX THYRISTOR
1400
1200
1000
800
600
400
260
160
180
200
220
240
C
C
= 2.4
F
C
C
= 2.2
F
C
C
= 2.0
F
C
C
= 1.8
F
C
C
= 2.6
F
C
C
= 2.8
F
V
CM
= 350V
L = 25H
T
a
= 25C
SEE FIG.1
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (C)
100 (%)
HOLDING CURRENT
( T
j
= t
C
)
HOLDING CURRENT
( T
j
=
25
C
)
GATE TRIGGER CURRENT VS.
GATE TRIGGER PULSE WIDTH
GATE TRIGGER PULSE WIDTH (s)
100 (%)
GATE TRIGGER CURRENT
( tw
)
GATE TRIGGER CURRENT
( DC
)
COMMUTATING CHARACTERISTICS
(SA01,SA02)
MAIN CAPACITOR (F)
PEAK ON-STATE CURRENT (A)
COMMUTATING CHARACTERISTICS
(SA07)
MAIN CAPACITOR (F)
PEAK ON-STATE CURRENT (A)
COMMUTATING CHARACTERISTICS
(SA04)
MAIN CAPACITOR (F)
PEAK ON-STATE CURRENT (A)
COMMUTATING CAPACITOR VS.
AMBIENT TEMPERATURE
AMBIENT TEMPERATURE (C)
100 (%)
COMMUTATING CAPACITOR
( Ta = tC
)
COMMUTATING CAPACITOR
( Ta = 25C
)
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