Feb.1999
MITSUBISHI THYRISTOR MODULES
TM20RA-M,-H
MEDIUM POWER GENERAL USE
INSULATED TYPE
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
APPLICATION
DC motor control, NC equipment, Inverters, Servo drives, contactless switches,
electric furnace temperature control, light dimmers
TM20RA-M,-H
I
T (AV)
Average on-state current ............ 20A
I
F (AV)
Average forward current ............ 20A
V
RRM
Repetitive peak reverse voltage
........ 400/800V
V
DRM
Repetitive peak off-state voltage
........ 400/800V
MIX DOUBLE ARMS
Insulated Type
UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
G
1
K
1
A
1
A
2
K
2
8.5
15
36
4M4
13
18
32
2
5.5
60
47.6
Tab#110, t=0.5
11
2.0
16.5
24.5
30
CR
G
1
A
1
A
2
SR
K
1
K
2
LABEL
Feb.1999
ABSOLUTE MAXIMUM RATINGS
Unit
V
V
V
V
V
V
MITSUBISHI THYRISTOR MODULES
TM20RA-M,-H
MEDIUM POWER GENERAL USE
INSULATED TYPE
M
400
480
320
400
480
320
H
800
960
640
800
960
640
Symbol
V
RRM
V
RSM
V
R (DC)
V
DRM
V
DSM
V
D (DC)
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage
Non-repetitive peak off-state voltage
DC off-state voltage
Unit
A
A
A
A
2
s
A/
s
W
W
V
V
A
C
C
V
Nm
kgcm
Nm
kgcm
g
Conditions
Single-phase, half-wave 180
conduction, T
C
=87
C
One half cycle at 60Hz, peak value
Value for one cycle of surge current
V
D
=1/2V
DRM
, I
G
=0.5A, T
j
=125
C
Charged part to case
Main terminal screw M4
Mounting screw M5
Typical value
Ratings
30
20
400
6.7
10
2
100
5.0
0.5
10
5.0
2.0
40~125
40~125
2500
0.98~1.47
10~15
1.47~2.45
15~25
80
Symbol
I
T (RMS)
, I
F (RMS)
I
T (AV)
, I
F (AV)
I
TSM
, I
FSM
I
2t
di/dt
P
GM
P
G (AV)
V
FGM
V
RGM
I
FGM
T
j
T
stg
V
iso
--
--
Parameter
RMS current
Average current
Surge (non-repetitive) current
I
2t
for fusing
Critical rate of rise of on-state current
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
Voltage class
ELECTRICAL CHARACTERISTICS
Unit
mA
mA
V
V/
s
V
V
mA
C/ W
C/ W
M
Limits
Symbol
I
RRM
I
DRM
V
TM
, V
FM
dv/dt
V
GT
V
GD
I
GT
R
th (j-c)
R
th (c-f)
--
Parameter
Repetitive peak reverse current
Repetitive peak off-state current
Foward voltage
Critical rate of rise of off-state voltage
Gate trigger voltage
Gate non-trigger voltage
Gate trigger current
Thermal resistance
Contact thermal resistance
Insulation resistance
Test conditions
T
j
=125
C, V
RRM
applied
T
j
=125
C, V
DRM
applied
T
j
=125
C, I
TM
=I
FM
=60A, instantaneous meas.
T
j
=125
C, V
D
=2/3V
DRM
T
j
=25
C, V
D
=6V, R
L
=2
T
j
=125
C, V
D
=1/2V
DRM
T
j
=25
C, V
D
=6V, R
L
=2
Junction to case (per 1/2 module)
Case to fin, conductive grease applied (per 1/2 module)
Measured with a 500V megohmmeter between main terminal
and case
Min.
--
--
--
500
--
0.25
10
--
--
10
Typ.
--
--
--
--
--
--
--
--
--
--
Max.
4.0
4.0
1.8
--
3.0
--
50
1.0
0.25
--
Note: Items of the above table applies to the Thyristor part and the Diode part as circled in the following tables.
Feb.1999
1
10
3
10
2
10
0
10
0
10
1
10
1
10
0
10
4
10
3
10
2
10
1
10
1
10
2
10
3
10
1
10
0
10
70
50
30
20
7
5
3
2
0
100
500
200
300
400
10
1
100
0.5
7
5
3
2
7
5
3
2
7
5
3
2
1.5
2.5
3.5
4.5
T
j
=125C
7
5
3
2
7
5
3
2
7
5
3
2
3
2
7
5
3
2
7
5
3
2
4
7
5
4
V
GT
=3.0V
I
GT
=
50mA
I
FGM
=2.0A
P
GM
=5.0W
V
FGM
=10V
V
GD
=0.25V
P
G(AV)
=
0.50W
T
j
=
25C
7
5
3
2
7
5
3
2
7
5
3
2
0.2
0.4
0.6
0.8
1.0
0
7
5
3
2
MITSUBISHI THYRISTOR MODULES
TM20RA-M,-H
MEDIUM POWER GENERAL USE
INSULATED TYPE
MAXIMUM RATINGS
Item
Thyristor
Diode
V
RRM
V
RSM
V
R (DC)
V
DRM
--
V
DSM
--
V
D (DC)
--
I
T (RMS)
I
F (RMS)
I
T (AV)
I
F (AV)
I
TSM
I
FSM
I
2t
di/dt
--
Item
Thyristor
Diode
P
GM
--
PG
(AV)
--
V
FGM
--
I
FGM
--
T
j
T
stg
ELECTRICAL CHARACTERISTICS
Item
Thyristor
Diode
I
RRM
I
DRM
--
dv/dt
--
V
GT
--
V
GD
--
V
TM
V
FM
I
GT
--
R
th (j-c)
PERFORMANCE CURVES
MAXIMUM FORWARD CHARACTERISTIC
RATED SURGE (NON-REPETITIVE)
CURRENT
GATE CHARACTERISTICS
MAXIMUM TRANSIENT THERMAL
IMPEDANCE (JUNCTION TO CASE)
CURRENT (A)
GA
TE VOL
T
AGE (V)
SURGE (NON-REPETITIVE)
CURRENT (A)
TRANSIENT THERMAL IMPEDANCE
(
C/
W)
CONDUCTION TIME (CYCLE AT 60Hz)
FORWARD VOLTAGE (V)
GATE CURRENT (mA)
TIME (s)
R
th (c-f)
Feb.1999
0
0
40
20
10
40
30
35
30
25
20
15
10
5
5
35
15
25
=30
60
180
270
120
90
DC
360
0
0
20
10
5
40
15
35
30
25
20
15
10
5
=30
60
120
90
180
360
130
50
60
70
80
90
100
110
120
0
20
10
5
15
=30
60
90
180
120
360
50
0
40
20
10
130
30
120
110
80
100
90
70
60
5
35
15
25
270
=30 60
90
120
180
DC
360
0
0
50
20
10
80
30
70
60
50
40
30
20
10
40
=180
60
90
30
360
80
0
50
20
10
130
30
85
40
90
95
100
105
110
115
120
125
360
=30
60,90
180
RESISTIVE, INDUCTIVE
LOAD
PER SINGLE MODULE
RESISTIVE, INDUCTIVE
LOAD
PER SINGLE ELEMENT
RESISTIVE, INDUCTIVE
LOAD
PER SINGLE
ELEMENT
RESISTIVE, INDUCTIVE
LOAD
PER SINGLE ELEMENT
RESISTIVE, INDUCTIVE
LOAD
PER SINGLE ELEMENT
RESISTIVE, INDUCTIVE
LOAD
PER SINGLE MODULE
MAXIMUM AVERAGE
POWER DISSIPATION
(SINGLE PHASE HALFWAVE)
LIMITING VALUE OF THE AVERAGE
CURRENT (SINGLE PHASE HALFWAVE)
A
VERAGE POWER DISSIP
A
TION (W)
AVERAGE CURRENT (A)
AVERAGE CURRENT (A)
MAXIMUM AVERAGE POWER
DISSIPATION (RECTANGULAR WAVE)
LIMITING VALUE OF THE AVERAGE
CURRENT (RECTANGULAR WAVE)
AVERAGE CURRENT (A)
AVERAGE CURRENT (A)
A
VERAGE POWER DISSIP
A
TION (W)
RMS CURRENT (A)
RMS CURRENT (A)
A
VERAGE POWER DISSIP
A
TION (W)
CASE TEMPERA
TURE (
C)
CASE TEMPERA
TURE (
C)
CASE TEMPERA
TURE (
C)
MITSUBISHI THYRISTOR MODULES
TM20RA-M,-H
MEDIUM POWER GENERAL USE
INSULATED TYPE
LIMITING VALUE OF THE RMS CURRENT
(REVERSE-PARALLEL CONNECTION,
THREE-PHASE THREE-LINE CONNECTION)
MAXIMUM AVERAGE POWER DISSIPATION
(REVERSE-PARALLEL CONNECTION,
THREE-PHASE THREE-LINE CONNECTION)
Feb.1999
0
0
40
20
10
80
30
70
60
50
40
30
20
10
35
15
5
25
=30
60
120
90
180
360
360
130
50
60
70
80
90
100
110
120
0
40
20
10
30
35
15
5
25
=30
60 90
180
120
0
0
80
40
20
80
60
70
60
50
40
30
20
10
10
70
30
50
=30
60
120
90
360
50
0
80
40
20
130
60
120
110
100
90
80
70
60
10
70
30
50
90
=30
60
120
360
RESISTIVE,
INDUCTIVE
LOAD
RESISTIVE,
INDUCTIVE
LOAD
RESISTIVE,
INDUCTIVE
LOAD
RESISTIVE,
INDUCTIVE
LOAD
CASE TEMPERA
TURE (
C)
(PER SINGLE MODULE)
POWER DISSIP
A
TION (W)
(PER SINGLE MODULE)
MAXIMUM POWER DISSIPATION
(SINGLE PHASE FULLWAVE RECTIFIED)
LIMITING VALUE OF
THE DC OUTPUT CURRENT
(SINGLE PHASE FULLWAVE RECTIFIED)
DC OUTPUT CURRENT (A)
(PER TWO MODULES)
DC OUTPUT CURRENT (A)
(PER TWO MODULES)
MITSUBISHI THYRISTOR MODULES
TM20RA-M,-H
MEDIUM POWER GENERAL USE
INSULATED TYPE
CASE TEMPERA
TURE (
C)
(PER SINGLE MODULE)
POWER DISSIP
A
TION (W)
(PER SINGLE MODULE)
MAXIMUM POWER DISSIPATION
(THREE-PHASE FULLWAVE RECTIFIED)
LIMITING VALUE OF THE DC
OUTPUT CURRENT
(THREE-PHASE FULLWAVE RECTIFIED)
DC OUTPUT CURRENT (A)
(PER THREE MODULES)
DC OUTPUT CURRENT (A)
(PER THREE MODULES)
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