161
Feb.1999
MITSUBISHI THYRISTOR MODULES
TM55RZ/EZ-M,-H
MEDIUM POWER GENERAL USE
INSULATED TYPE
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
APPLICATION
DC motor control, NC equipment, AC motor control, contactless switches,
electric furnace temperature control, light dimmers
TM55RZ/EZ-M,-H
I
T (AV)
Average on-state current ............ 55A
I
F (AV)
Average forward current ............ 55A
V
RRM
Repetitive peak reverse voltage
........ 400/800V
V
DRM
Repetitive peak off-state voltage
........ 400/800V
MIX DOUBLE ARMS
Insulated Type
UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
93.5
80
17.5
20
20
3M5
2
6.5
26
12.5
K1
G1
Tab#110, t=0.5
30
21
6.5
9
(RZ)
A
1
K
2
CR
K
1
K
1
G
1
A
2
(EZ)
A
1
CR
K
1
K
2
K
1
G
1
SR
A
2
SR
LABEL
A1K2
K1
A2
Feb.1999
ABSOLUTE MAXIMUM RATINGS
Unit
V
V
V
V
V
V
MITSUBISHI THYRISTOR MODULES
TM55RZ/EZ-M,-H
MEDIUM POWER GENERAL USE
INSULATED TYPE
M
400
480
320
400
480
320
H
800
960
640
800
960
640
Symbol
V
RRM
V
RSM
V
R (DC)
V
DRM
V
DSM
V
D (DC)
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage
Non-repetitive peak off-state voltage
DC off-state voltage
Unit
A
A
A
A
2
s
A/
s
W
W
V
V
A
C
C
V
Nm
kgcm
Nm
kgcm
g
Conditions
Single-phase, half-wave 180
conduction, T
C
=86
C
One half cycle at 60Hz, peak value
Value for one cycle of surge current
V
D
=1/2V
DRM
, I
G
=1.0A, T
j
=125
C
Charged part to case
Main terminal screw M5
Mounting screw M6
Typical value
Ratings
86
55
1100
5.0
10
3
100
5.0
0.5
10
5.0
2.0
40~125
40~125
2500
1.47~1.96
15~20
1.96~2.94
20~30
160
Symbol
I
T (RMS)
, I
F (RMS)
I
T (AV)
, I
F (AV)
I
TSM
, I
FSM
I
2t
di/dt
P
GM
P
G (AV)
V
FGM
V
RGM
I
FGM
T
j
T
stg
V
iso
--
--
Parameter
RMS current
Average current
Surge (non-repetitive) current
I
2t
for fusing
Critical rate of rise of on-state current
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
Voltage class
ELECTRICAL CHARACTERISTICS
Unit
mA
mA
V
V/
s
V
V
mA
C/ W
C/ W
M
Limits
Symbol
I
RRM
I
DRM
V
TM
, V
FM
dv/dt
V
GT
V
GD
I
GT
R
th (j-c)
R
th (c-f)
--
Parameter
Repetitive peak reverse current
Repetitive peak off-state current
Forward voltage
Critical rate of rise of off-state voltage
Gate trigger voltage
Gate non-trigger voltage
Gate trigger current
Thermal resistance
Contact thermal resistance
Insulation resistance
Test conditions
T
j
=125
C, V
RRM
applied
T
j
=125
C, V
DRM
applied
T
j
=125
C, I
TM
=I
FM
=165A, instantaneous meas.
T
j
=125
C, V
D
=2/3V
DRM
T
j
=25
C, V
D
=6V, R
L
=2
T
j
=125
C, V
D
=1/2V
DRM
T
j
=25
C, V
D
=6V, R
L
=2
Junction to case (per 1/2 module)
Case to fin, conductive grease applied (per 1/2 module)
Measured with a 500V megohmmeter between main terminal
and case
Min.
--
--
--
500
--
0.25
15
--
--
10
Typ.
--
--
--
--
--
--
--
--
--
--
Max.
10
10
1.35
--
3.0
--
100
0.5
0.2
--
Note: Items of the above table applies to the Thyristor part and the Diode part as circled in the following tables.
Feb.1999
MITSUBISHI THYRISTOR MODULES
TM55RZ/EZ-M,-H
MEDIUM POWER GENERAL USE
INSULATED TYPE
MAXIMUM RATINGS
Item
Thyristor
Diode
V
RRM
V
RSM
V
R (DC)
V
DRM
--
V
DSM
--
V
D (DC)
--
I
T (RMS)
I
F (RMS)
I
T (AV)
I
F (AV)
I
TSM
I
FSM
I
2t
di/dt
--
Item
Thyristor
Diode
P
GM
--
PG
(AV)
--
V
FGM
--
I
FGM
--
T
j
T
stg
ELECTRICAL CHARACTERISTICS
Item
Thyristor
Diode
I
RRM
I
DRM
--
dv/dt
--
V
GT
--
V
GD
--
V
TM
V
FM
I
GT
--
R
th (j-c)
PERFORMANCE CURVES
MAXIMUM FORWARD CHARACTERISTIC
RATED SURGE (NON-REPETITIVE)
CURRENT
GATE CHARACTERISTICS
MAXIMUM TRANSIENT THERMAL
IMPEDANCE (JUNCTION TO CASE)
CURRENT (A)
GA
TE VOL
T
AGE (V)
SURGE (NON-REPETITIVE)
CURRENT (A)
TRANSIENT THERMAL IMPEDANCE
(
C/
W)
CONDUCTION TIME (CYCLE AT 60Hz)
FORWARD VOLTAGE (V)
GATE CURRENT (mA)
TIME (s)
R
th (c-f)
3
10
2
10
1
10
0
10
0
10
1
10
1
10
0
10
4
10
3
10
2
10
1
10
1
10
3
10
2
10
1
10
0
10
70
50
30
20
7
5
3
2
200
400
1200
600
800
1000
10
1
100
7
5
3
2
7
5
3
2
7
5
3
2
3
2
7
5
3
2
7
5
3
2
4
7
5
4
V
GT
=3.0V
I
GT
=
100mA
I
FGM
=2.0A
P
GM
=5W
V
FGM
=10V
V
GD
=0.25V
P
G(AV)
=
0.50W
T
j
=25C
0.4
7
5
3
2
7
5
3
2
7
5
3
2
0.8
1.2
2.0
2.4
1.6
T
j
=125C
7
5
3
2
7
5
3
2
7
5
3
2
0.8
0
7
5
3
2
0.1
0.2
0.3
0.4
0.5
0.6
0.7
Feb.1999
MAXIMUM AVERAGE POWER
DISSIPATION (SINGLE PHASE HALFWAVE)
LIMITING VALUE OF THE AVERAGE
CURRENT (SINGLE PHASE HALFWAVE)
A
VERAGE POWER DISSIP
A
TION (W)
AVERAGE CURRENT (A)
AVERAGE CURRENT (A)
MAXIMUM AVERAGE
POWER DISSIPATION
(RECTANGULAR WAVE)
LIMITING VALUE OF THE AVERAGE
CURRENT (RECTANGULAR WAVE)
AVERAGE CURRENT (A)
AVERAGE CURRENT (A)
LIMITING VALUE OF THE RMS CURRENT
(REVERSE-PARALLEL CONNECTION,
THREE-PHASE THREE-LINE CONNECTION)
MAXIMUM AVERAGE POWER DISSIPATION
(REVERSE-PARALLEL CONNECTION,
THREE-PHASE THREE-LINE CONNECTION)
A
VERAGE POWER DISSIP
A
TION (W)
RMS CURRENT (A)
RMS CURRENT (A)
A
VERAGE POWER DISSIP
A
TION (W)
CASE TEMPERA
TURE (
C)
CASE TEMPERA
TURE (
C)
CASE TEMPERA
TURE (
C)
MITSUBISHI THYRISTOR MODULES
TM55RZ/EZ-M,-H
MEDIUM POWER GENERAL USE
INSULATED TYPE
0
0
100
20
100
80
20
40
60
40
60
80
360
=30
60
270
DC
180
120
90
130
50
60
70
80
90
100
110
120
0
100
20
80
40
60
=30 60
DC
270
360
180
90
120
0
0
160
40
20
160
60
140
120
100
80
60
40
20
80 100 120 140
=180
60
90
30
360
80
0
160
40
20
130
60
85
80
90
95
100
105
110
115
120
125
100 120 140
360
=30
180
60
90
0
0
80
30
10
50
70
80
10
20
30
40
50
60
70
20
40
60
=30
120
90
180
360
60
130
50
0
60
80
10
20
50
60
70
80
90
100
110
120
30
40
70
=30 60 90
360
120 180
RESISTIVE,
INDUCTIVE LOAD
PER SINGLE ELEMENT
RESISTIVE, INDUCTIVE
LOAD
PER SINGLE
ELEMENT
RESISTIVE, INDUCTIVE
LOAD
PER SINGLE ELEMENT
RESISTIVE, INDUCTIVE
LOAD
PER SINGLE MODULE
RESISTIVE, INDUCTIVE
LOAD
PER SINGLE
ELEMENT
RESISTIVE, INDUCTIVE
LOAD
PER SINGLE MODULE
Feb.1999
CASE TEMPERA
TURE (
C)
(PER SINGLE MODULE)
POWER DISSIP
A
TION (W)
(PER SINGLE MODULE)
MAXIMUM POWER DISSIPATION
(SINGLE PHASE FULLWAVE RECTIFIED)
LIMITING VALUE OF
THE DC OUTPUT CURRENT
(SINGLE PHASE FULLWAVE RECTIFIED)
DC OUTPUT CURRENT (A)
(PER TWO MODULES)
DC OUTPUT CURRENT (A)
(PER TWO MODULES)
MITSUBISHI THYRISTOR MODULES
TM55RZ/EZ-M,-H
MEDIUM POWER GENERAL USE
INSULATED TYPE
CASE TEMPERA
TURE (
C)
(PER SINGLE MODULE)
POWER DISSIP
A
TION (W)
(PER SINGLE MODULE)
MAXIMUM POWER DISSIPATION
(THREE-PHASE FULLWAVE RECTIFIED)
LIMITING VALUE OF THE DC
OUTPUT CURRENT
(THREE-PHASE FULLWAVE RECTIFIED)
DC OUTPUT CURRENT (A)
(PER THREE MODULES)
DC OUTPUT CURRENT (A)
(PER THREE MODULES)
0
0
160
80
40
160
120
140
120
100
80
60
40
20
20
140
60
100
=30
60
120
90
360
50
0
160
80
40
130
120
60
20
140
60
100
70
80
90
100
110
120
90
=30
60
120
360
0
0
160
60
20
160
100
140
120
100
80
60
40
20
120
40
80
140
=30
60
120
90
180
360
130
80
0
160
40
20
100 120
85
90
95
100
105
110
115
120
125
60
80
140
360
=30 60 90
180
120
RESISTIVE,
INDUCTIVE
LOAD
RESISTIVE,
INDUCTIVE
LOAD
RESISTIVE,
INDUCTIVE
LOAD
RESISTIVE,
INDUCTIVE
LOAD
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