Feb.1999
MITSUBISHI THYRISTOR MODULES
TM60SZ-M
MEDIUM POWER GENERAL USE
NON-INSULATED TYPE
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
APPLICATION
Welders
TM60SZ-M
I
T (AV)
Average on-state current ............ 60A
V
RRM
Repetitive peak reverse voltage
................ 400V
V
DRM
Repetitive peak off-state voltage
................ 400V
TRIPLE ARMS
Non-Insulated Type
93.5
80
26
2
6.5
12.5
3M5
K
3
K
2
K
1
G
3
K
3
G
2
K
2
G
1
K
1
K
3
K
2
K
1
17.5
20
20
30
21
6.5
9
K
3
G
3
K
3
K
2
G
2
K
1
G
1
K
2
K
1
A
CR
3
CR
2
CR
1
A
Tab#110, t=0.5
LABEL
Feb.1999
ABSOLUTE MAXIMUM RATINGS
Unit
V
V
V
V
V
V
MITSUBISHI THYRISTOR MODULES
TM60SZ-M
MEDIUM POWER GENERAL USE
NON-INSULATED TYPE
M
400
480
320
400
480
320
Symbol
V
RRM
V
RSM
V
R (DC)
V
DRM
V
DSM
V
D (DC)
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage
Non-repetitive peak off-state voltage
DC off-state voltage
Unit
A
A
A
A
2
s
A/
s
W
W
V
V
A
C
C
Nm
kgcm
Nm
kgcm
g
Conditions
Three-phase, half-wave, T
C
=125
C
One half cycle at 60Hz, peak value
Value for one cycle of surge current
V
D
=1/2V
DRM
, I
G
=1.0A, T
j
=150
C
Main terminal screw M5
Mounting screw M6
Typical value
Ratings
95
60
1200
6.0
10
3
50
5.0
0.5
10
5.0
2.0
40~+150
40~+125
1.47~1.96
15~20
1.96~2.94
20~30
160
Symbol
I
T (RMS)
I
T (AV)
I
TSM
I
2t
di/dt
P
GM
P
G (AV)
V
FGM
V
RGM
I
FGM
T
j
T
stg
--
--
Parameter
RMS on-state current
Average on-state current
Surge (non-repetitive) on-state current
I
2t
for fusing
Critical rate of rise of on-state current
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Mounting torque
Weight
Voltage class
ELECTRICAL CHARACTERISTICS
Unit
mA
mA
V
V/
s
V
V
mA
C/ W
C/ W
Limits
Symbol
I
RRM
I
DRM
V
TM
dv/dt
V
GT
V
GD
I
GT
R
th (j-c)
R
th (c-f)
Parameter
Repetitive peak reverse current
Repetitive peak off-state current
On-state voltage
Critical rate of rise of off-state voltage
Gate trigger voltage
Gate non-trigger voltage
Gate trigger current
Thermal resistance
Contact thermal resistance
Test conditions
T
j
=150
C, V
RRM
applied
T
j
=150
C, V
DRM
applied
T
j
=150
C, I
TM
=180A, instantaneous meas.
T
j
=150
C, V
D
=2/3V
DRM
T
j
=25
C, V
D
=6V, R
L
=2
T
j
=150
C, V
D
=1/2V
DRM
T
j
=25
C, V
D
=6V, R
L
=2
Junction to case (per 1/3 module)
Case to fin, conductive grease applied (per 1/3 module)
Min.
--
--
--
200
--
0.25
15
--
--
Typ.
--
--
--
--
--
--
--
--
--
Max.
25
25
1.2
--
3.0
--
100
0.3
0.3
Feb.1999
1
10
2
10
3
10
0
10
0
10
1
10
1
10
0
10
4
10
3
10
2
10
1
10
1
10
3
10
2
10
1
10
0
10
7
5
3
2
7
5
3
2
7
5
3
2
3
2
7
5
3
2
7
5
3
2
4
7
5
4
V
GT
=3.0V
I
GT
=
100mA
I
FGM
=2.0A
P
GM
=5.0W
V
FGM
=10V
V
GD
=0.25V
P
G(AV)
=
0.50W
T
j
=25C
0.6
7
5
3
2
7
5
3
2
7
5
3
2
0.8
1.0
1.6
2.0
1.4
1.2
1.8
T
j
=150C
70
50
30
20
7
5
3
2
0
200
1600
10
1
100
400
600
800
1000
1200
1400
7
5
3
2
7
5
3
2
7
5
3
2
0.40
0
7
5
3
2
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0
0
80
30
10
50
70
80
10
20
30
40
50
60
70
20
40
60
=30
120
90
180
60
150
70
0
60
80
10
20
50
80
90
100
110
120
130
140
30
40
70
=30 60 90
360
180
120
PER SINGLE ELEMENT
RESISTIVE,
INDUCTIVE
LOAD
RESISTIVE,
INDUCTIVE LOAD
PER SINGLE
ELEMENT
360
MITSUBISHI THYRISTOR MODULES
TM60SZ-M
MEDIUM POWER GENERAL USE
NON-INSULATED TYPE
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTIC
RATED SURGE (NON-REPETITIVE)
ON-STATE CURRENT
GATE CHARACTERISTICS
MAXIMUM TRANSIENT THERMAL
IMPEDANCE (JUNCTION TO CASE)
ON-ST
A
TE CURRENT
(A)
GA
TE VOL
T
AGE
(V)
SURGE (NON-REPETITIVE)
ON-ST
A
TE CURRENT
(A)
TRANSIENT THERMAL IMPEDANCE
(
C/
W)
CONDUCTION TIME
(CYCLE AT 60Hz)
ON-STATE VOLTAGE
(V)
GATE CURRENT
(mA)
TIME (s)
MAXIMUM AVERAGE ON-STAGE
POWER DISSIPATION
(SINGLE PHASE HALFWAVE)
LIMITING VALUE OF THE AVERAGE
ON-STATE CURRENT
(SINGLE PHASE HALFWAVE)
AVERAGE ON-STATE CURRENT
(A)
AVERAGE ON-STATE CURRENT
(A)
A
VERAGE ON-ST
A
TE POWER
DISSIP
A
TION
(W)
CASE TEMPERA
TURE
(
C)
Feb.1999
MITSUBISHI THYRISTOR MODULES
TM60SZ-M
MEDIUM POWER GENERAL USE
NON-INSULATED TYPE
MAXIMUM AVERAGE ON-STATE
POWER DISSIPATION
(RECTANGULAR WAVE)
LIMITING VALUE OF THE AVERAGE
ON-STATE CURRENT
(RECTANGULAR WAVE)
AVERAGE ON-STATE CURRENT
(A)
AVERAGE ON-STATE CURRENT
(A)
CASE TEMPERA
TURE
(
C)
A
VERAGE ON-ST
A
TE POWER
DISSIP
A
TION
(W)
100
0
100
20
150
80
110
40
60
120
130
140
360
=30 60
270 DC
180
90
120
RESISTIVE,
INDUCTIVE
LOAD
0
0
100
20
100
80
20
40
60
40
60
80
360
=30
60
270
DC
180
120
90
RESISTIVE,
INDUCTIVE LOAD
PER SINGLE
ELEMENT
PER SINGLE
ELEMENT
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