1
Motorola Bipolar Power Transistor Device Data
Complementary Silicon Power
Transistors
. . . designed for generalpurpose switching and amplifier applications.
DC Current Gain -- hFE = 2070 @ IC = 4 Adc
CollectorEmitter Saturation Voltage --
VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc
Excellent Safe Operating Area
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
VCEO
60
Vdc
CollectorEmitter Voltage
VCER
70
Vdc
CollectorBase Voltage
VCB
100
Vdc
EmitterBase Voltage
VEB
7
Vdc
Collector Current -- Continuous
IC
15
Adc
Base Current
IB
7
Adc
Total Power Dissipation @ TC = 25
_
C
Derate above 25
_
C
PD
115
0.657
Watts
W/
_
C
Operating and Storage Junction Temperature
Range
TJ, Tstg
65 to + 200
_
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
JC
1.52
_
C/W
160
0
0
25
50
75
100
125
150
175
200
Figure 1. Power Derating
TC, CASE TEMPERATURE (
C)
P
D
, POWER DISSIP
A
TION (W
A
TTS)
140
120
100
80
60
40
20
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by 2N3055/D
Motorola, Inc. 1995
2N3055
MJ2955
CASE 107
TO204AA
(TO3)
*Motorola Preferred Device
15 AMPERE
POWER TRANSISTORS
COMPLEMENTARY
SILICON
60 VOLTS
115 WATTS
*
*
NPN
PNP
2N3055 MJ2955
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TC = 25
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
*OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage (1)
(IC = 200 mAdc, IB = 0)
VCEO(sus)
60
--
Vdc
CollectorEmitter Sustaining Voltage (1)
(IC = 200 mAdc, RBE = 100 Ohms)
VCER(sus)
70
--
Vdc
Collector Cutoff Current
(VCE = 30 Vdc, IB = 0)
ICEO
--
0.7
mAdc
Collector Cutoff Current
(VCE = 100 Vdc, VBE(off) = 1.5 Vdc)
(VCE = 100 Vdc, VBE(off) = 1.5 Vdc, TC = 150
_
C)
ICEX
--
--
1.0
5.0
mAdc
Emitter Cutoff Current
(VBE = 7.0 Vdc, IC = 0)
IEBO
--
5.0
mAdc
*ON CHARACTERISTICS (1)
DC Current Gain
(IC = 4.0 Adc, VCE = 4.0 Vdc)
(IC = 10 Adc, VCE = 4.0 Vdc)
hFE
20
5.0
70
--
--
CollectorEmitter Saturation Voltage
(IC = 4.0 Adc, IB = 400 mAdc)
(IC = 10 Adc, IB = 3.3 Adc)
VCE(sat)
--
1.1
3.0
Vdc
BaseEmitter On Voltage
(IC = 4.0 Adc, VCE = 4.0 Vdc)
VBE(on)
--
1.5
Vdc
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
(VCE = 40 Vdc, t = 1.0 s, Nonrepetitive)
Is/b
2.87
--
Adc
DYNAMIC CHARACTERISTICS
Current Gain -- Bandwidth Product
(IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 MHz)
fT
2.5
--
MHz
*SmallSignal Current Gain
(IC = 1.0 Adc, VCE = 4.0 Vdc, f = 1.0 kHz)
hfe
15
120
--
*SmallSignal Current Gain Cutoff Frequency
(VCE = 4.0 Vdc, IC = 1.0 Adc, f = 1.0 kHz)
fhfe
10
--
kHz
* Indicates Within JEDEC Registration. (2N3055)
(1) Pulse Test: Pulse Width
v
300
s, Duty Cycle
v
2.0%.
20
6
Figure 2. Active Region Safe Operating Area
VCE, COLLECTOREMITTER VOLTAGE (VOLTS)
10
6
4
2
1
0.6
0.4
0.2
10
20
40
60
2N3055, MJ2955
I C
, COLLECT
OR
CURRENT
(AMP)
dc
500
s
1 ms
250
s
50
s
BONDING WIRE LIMIT
THERMALLY LIMITED @ TC = 25
C (SINGLE PULSE)
SECOND BREAKDOWN LIMIT
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 2 is based on TC = 25
_
C; TJ(pk) is
variable depending on power level. Second breakdown pulse
limits are valid for duty cycles to 10% but must be derated for
temperature according to Figure 1.
2N3055 MJ2955
3
Motorola Bipolar Power Transistor Device Data
V
CE
, COLLECT
OREMITTER VOL
T
AGE (VOL
TS)
V
CE
, COLLECT
OREMITTER VOL
T
AGE (VOL
TS)
500
0.1
Figure 3. DC Current Gain
IC, COLLECTOR CURRENT (AMP)
5.0
0.2
0.3
0.5 0.7
1.0
2.0 3.0
5.0
10
100
50
30
20
200
70
h
FE
, DC CURRENT
GAIN
TJ = 150
C
25
C
55
C
VCE = 4.0 V
NPN
2N3055
PNP
MJ2955
200
0.1
IC, COLLECTOR CURRENT (AMP)
10
0.2
0.3
0.5 0.7 1.0
2.0
3.0
5.0
10
70
30
20
100
50
h
FE
, DC CURRENT
GAIN
TJ = 150
C
25
C
55
C
VCE = 4.0 V
7.0
10
300
7.0
7.0
Figure 4. Collector Saturation Region
2.0
5.0
IB, BASE CURRENT (mA)
0
10
20
50
100
200
500
1000 2000
5000
1.6
1.2
0.8
0.4
IC = 1.0 A
TJ = 25
C
4.0 A
8.0 A
2.0
IB, BASE CURRENT (mA)
0
1.6
1.2
0.8
0.4
1.4
0.1
IC, COLLECTOR CURRENT (AMPERES)
0.2
0.3
0.5 0.7
1.0
2.0
3.0
5.0
10
1.0
0.6
0.4
0.2
0
TJ = 25
C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
V
,
VOL
T
AGE
(VOL
TS)
Figure 5. "On" Voltages
1.2
0.8
7.0
VBE @ VCE = 4.0 V
2.0
0.1
IC, COLLECTOR CURRENT (AMP)
0.2
0.3
0.5
1.0
2.0
3.0
5.0
10
1.2
0.4
0
TJ = 25
C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
V
,
VOL
T
AGE
(VOL
TS)
1.6
0.8
VBE @ VCE = 4.0 V
5.0
10
20
50
100
200
500
1000 2000
5000
IC = 1.0 A
TJ = 25
C
4.0 A
8.0 A
2N3055 MJ2955
4
Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO204AA OUTLINE SHALL APPLY.
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
1.550 REF
39.37 REF
B
1.050
26.67
C
0.250
0.335
6.35
8.51
D
0.038
0.043
0.97
1.09
E
0.055
0.070
1.40
1.77
G
0.430 BSC
10.92 BSC
H
0.215 BSC
5.46 BSC
K
0.440
0.480
11.18
12.19
L
0.665 BSC
16.89 BSC
N
0.830
21.08
Q
0.151
0.165
3.84
4.19
U
1.187 BSC
30.15 BSC
V
0.131
0.188
3.33
4.77
A
N
E
C
K
T
SEATING
PLANE
2 PL
D
M
Q
M
0.13 (0.005)
Y
M
T
M
Y
M
0.13 (0.005)
T
Q
Y
2
1
U
L
G
B
V
H
CASE 107
TO204AA (TO3)
ISSUE Z
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Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different
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2N3055/D
*2N3055/D*
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