312
Motorola Bipolar Power Transistor Device Data
Silicon NPN Power Transistors
. . . designed for mediumspeed switching and amplifier applications. These devices
feature:
Total Switching Time at 3 A typically 1.15
s
Gain Ranges Specified at 1 A and 3 A
Low VCE(sat): typically 0.5 V at IC = 5 A and IB = 0.5 A
Excellent Safe Operating Areas
Complement to 2N379192
MAXIMUM RATINGS
Rating
Symbol
2N3715
2N3716
Unit
CollectorEmitter Voltage
VCEO
60
80
Volts
CollectorBase Voltage
VCB
80
100
Volts
EmitterBase Voltage
VEB
7.0
7.0
Volts
Collector Current
IC
10
10
Amps
Base Current
IB
4.0
4.0
Amps
Power Dissipation
PD
150
150
Watts
Thermal Resistance
JC
1.17
1.17
_
C/W
Operating Junction and Storage Temperature Range
TJ, Tstg
65 to + 200
_
C
Safe Area Limits are indicated by Figures 12, 13. Both limits are applicable and must be observed.
140
120
100
80
60
40
0
20
0
25
50
75
100
125
150
175
200
Figure 1. PowerTemperature Derating Curve
TC, CASE TEMPERATURE (
C)
P
D
, POWER DISSIP
A
TION (W
A
TTS)
160
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by 2N3715/D
Motorola, Inc. 1995
2N3715
2N3716
10 AMPERE
POWER TRANSISTORS
SILICON NPN
60 80 VOLTS
150 WATTS
NPN
CASE 107
TO204AA
(TO3)
REV 7
2N3715 2N3716
313
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TC = 25
_
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
EmitterBase Cutoff Current
(VEB = 7.0 Vdc)
All Types
IEBO
--
5.0
mAdc
CollectorEmitter Cutoff Current
(VCE = 80 Vdc, VBE = 1.5 Vdc)
2N3715
(VCE = 100 Vdc, VBE = 1.5 Vdc)
2N3716
(VCE = 60 Vdc, VBE = 1.5 Vdc, TC = 150
_
C)
2N3715
(VCE = 80 Vdc, VBE = 1.5 Vdc, TC = 150
_
C)
2N3716
ICEX
--
--
--
--
1.0
1.0
10
10
mAdc
CollectorEmitter Sustaining Voltage (1)
(IC = 200 mAdc, IB = 0)
2N3715
2N3716
VCEO(sus)*
60
80
--
--
Vdc
DC Current Gain (1)
(IC = 1.0 Adc, VCE = 2.0 Vdc)
2N3715, 2N3716
(IC = 3.0 Adc, VCE = 2.0 Vdc)
2N3715, 2N3716
hFE*
50
30
150
--
--
CollectorEmitter Saturation Voltage (1)
(IC = 5.0 Adc, IB = 0.5 Adc)
2N3715, 2N3716
VCE(sat)*
--
0.8
Vdc
BaseEmitter Saturation Voltage (1)
(IC = 5.0 Adc, IB = 0.5 Adc)
2N3715, 2N3716
VBE(sat)*
--
1.5
Vdc
BaseEmitter Voltage (1)
(IC = 3.0 Adc, VCE = 2.0 Vdc)
All Types
VBE*
--
1.5
Vdc
Small Signal Current Gain
(VCE = 10 Vdc, IC = 0.5 Adc, f = 1.0 MHz)
All Types
hfe
4.0
--
--
Switching Times (Figure 2)
Typ
s
(IC = 5.0 A, IB1 = IB2 = 0.5 Adc)
Rise Time
Storage Time
Fall Time
tr
ts
tf
0.45
0.3
0.4
(1) Pulse Test: Pulse Width
v
300
s, Duty Cycle
v
2.0%.
1.5
0.1
Figure 2. Typical Switching Times
IC, COLLECTOR CURRENT (AMPS)
1.0
0.7
0.5
0.3
0.2
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
SWITCHING
TIMES (
s)
ts
tf
tr
IB1 = IB2
+11.5 V
ton ~ 30
s
9 V
TEST CIRCUIT
~ 4.8 ms
WAVE SHAPE
AT POINT A
IC = 5 A, IB1 = IB2 = 0.5 A
f
150 cps
DUTY CYCLE
2%
+ 30 V
6
4 W
900
100
4 V
900
100
1 W
20
1 W
A
Hg RELAYS
+ 62 V
9 V
100
toff
~ 1.7 ms
2N3715 2N3716
314
Motorola Bipolar Power Transistor Device Data
10
0.1
Figure 3. Collector Current versus Base Current
IB, BASE CURRENT (mA)
7.0
5.0
3.0
2.0
1.0
0.07
0.05
0.01
0.2
0.5
1.0
5.0
20
50
100
1000
200
0.03
0.02
I C
, COLLECT
OR CURRENT
(AMPS)
TJ = 175
C
2.0
10
500
40
C
VCE = 2 V
SEE NOTES 1, 2
25
C
2N3715, 2N3716
1000
0
Figure 4. Base CurrentVoltage Variations
VBE, BASEEMITTER VOLTAGE (VOLTS)
700
1.0
0.4
0.8
1.6
2.0
I B
, BASE CURRENT
(mA)
TJ = 175
C
1.2
40
C
VCE = 2 V
SEE NOTE 2
25
C
500
300
200
100
70
50
30
20
10
7.0
5.0
3.0
2.0
10
0.1
Figure 5. Collector CurrentVoltage Variations
VBE, BASEEMITTER VOLTAGE (VOLTS)
7
5
3
2
1
0.7
0.5
0.1
0.4
1.6
2.0
0.3
0.2
I C
, COLLECT
OR CURRENT
(AMPS)
TJ = 175
C
0.8
1.2
40
C
25
C
2N3715, 2N3716
VCE = 2 V
SEE NOTE 2
0.1
0.2
0.3
0.5
0.7
NOTE 1. Dotted line indicates metered base current plus the ICBO of the transistor at 175
_
C.
NOTE 2. Pulse test: pulse width
200
sec, duty cycle
1.5%.
2N3715 2N3716
315
Motorola Bipolar Power Transistor Device Data
Figure 6. CollectorEmitter Saturation Voltage Variations
IB, BASE CURRENT (mA)
1.4
0.1
10
1.2
1.0
0.8
0.6
0.4
0.2
20
30
50
70
100
200
300
500
700
1000
2000
V
CE(sat)
, COLLECT
OREMITTER SA
TURA
TION
VOL
T
AGE (VOL
TS)
TJ =
25
C
40
C
175
C
SEE NOTE 2
IC = 5 A
Figure 7. BaseEmitter Saturation Voltage Variations
IB, BASE CURRENT (mA)
1.4
0.1
10
1.2
1.0
0.8
0.6
0.4
0.2
20
30
50
70
100
200
300
500
700
1000
2000
V
BE(sat)
, BASEEMITTER SA
TURA
TION
VOL
T
AGE (VOL
TS)
10
Figure 8. Collector Current versus
BaseEmitter Voltage
VBE, BASEEMITTER VOLTAGE (VOLTS)
, COLLECT
OR CURRENT
(mA)
I C
0.1
0.6
0.4
0.2
0
0.2
0.4
TJ = 175
C
REVERSE
FORWARD
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
TJ = 100
C
VCE = VCEO 20 V
SEE NOTE 2
100
Figure 9. Collector Current versus
BaseEmitter Resistance
RBE, EXTERNAL BASEEMITTER RESISTANCE (OHMS)
, COLLECT
OR CURRENT
(mA)
I C
0.1
1
10
100
1000
10,000
100,000
50
30
20
10
5.0
3.0
2.0
1.0
0.5
0.3
0.2
IC = 3 A
IC = 1 A
IC = 5 A
IC = 3 A
IC = 1 A
TJ =
25
C
40
C
175
C
SEE NOTE 2
VCE = VCEO 20 V
SEE NOTE 2
TJ = 175
C
TJ = 100
C
2N3715 2N3716
316
Motorola Bipolar Power Transistor Device Data
Figure 10. Current Gain Variations
IC, COLLECTOR CURRENT (AMPS)
0
0.01
200
150
100
50
0.02
0.03
0.05
0.07
0.1
0.2
0.3
0.5
0.7
1.0
10
2.0
3.0
5.0
7.0
TJ = 175
C
40
C
VCE = 2 V
25
C
hFE
+
IC ICBO
IB
)
ICBO
Figure 11. Current Gain -- Bandwidth Product versus Collector Current
IC, COLLECTOR CURRENT (AMPS)
0
0.1
8
6
4
2
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
VCE = 6 V
f
, CURRENT
GAIN -- BANDWIDTH PRODUCT
(mc)
h
FE
, CURRENT
GAIN
10
0
Figure 12. 2N3715
VCE, COLLECTOREMITTER VOLTAGE (VOLTS)
7
5
3
2
1
0.7
0.5
0.1
10
20
30
40
50
60
70
0.3
0.2
I C
, COLLECT
OR CURRENT
(AMPS)
DC to 5 ms
500
s
250
s
10
0
Figure 13. 2N3716
VCE, COLLECTOREMITTER VOLTAGE (VOLTS)
7
5
3
2
1
0.7
0.5
0.1
10
20
30
40
50
60
70
0.3
0.2
I C
, COLLECT
OR CURRENT
(AMPS)
500
s
250
s
50
s
SAFE OPERATING AREAS
80
90
DC to 5 ms
1 ms
50
s
1 ms
The Safe Operating Area Curves indicate IC VCE limits
below which the device will not go into secondary break-
down. Collector load lines for specific circuits must fall within
the applicable Safe Area to avoid causing a collectoremitter
short. (Duty cycle of the excursions make no significant
change in these safe areas.) To insure operation below the
maximum TJ, the powertemperature derating curve must be
observed for both steady state and pulse power conditions.
2N3715 2N3716
317
Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO204AA OUTLINE SHALL APPLY.
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
1.550 REF
39.37 REF
B
1.050
26.67
C
0.250
0.335
6.35
8.51
D
0.038
0.043
0.97
1.09
E
0.055
0.070
1.40
1.77
G
0.430 BSC
10.92 BSC
H
0.215 BSC
5.46 BSC
K
0.440
0.480
11.18
12.19
L
0.665 BSC
16.89 BSC
N
0.830
21.08
Q
0.151
0.165
3.84
4.19
U
1.187 BSC
30.15 BSC
V
0.131
0.188
3.33
4.77
A
N
E
C
K
T
SEATING
PLANE
2 PL
D
M
Q
M
0.13 (0.005)
Y
M
T
M
Y
M
0.13 (0.005)
T
Q
Y
2
1
U
L
G
B
V
H
CASE 107
TO204AA (TO3)
ISSUE Z
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