1
Motorola SmallSignal Transistors, FETs and Diodes Device Data
General Purpose Transistors
PNP Silicon
MAXIMUM RATINGS
Rating
Symbol
2N4036
2N4037
Unit
Collector Emitter Voltage
VCEO
65
40
Vdc
Collector Base Voltage
VCBO
90
60
Vdc
Emitter Base Voltage
VEBO
7.0
7.0
Vdc
Base Current
IB
0.5
Adc
Collector Current -- Continuous
IC
1.0
Adc
Continuous Power Dissipation
at or Below TC = 25
C
Linear Derating Factor
PD
5.0
28.6
5.0
28.6
Watts
mW/
C
Continuous Power Dissipation
at or Below TA = 25
C
Linear Derating Factor
PD
1.0
5.72
1.0
5.72
Watts
mW/
C
Operating and Storage Junction
Temperature Range
TJ, Tstg
65 to +200
C
Lead Temperature
1/16
from Case for 10 Seconds
TL
230
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
2N4036
2N4037
Unit
Thermal Resistance, Junction to Case
R
q
JC
35
35
C/W
ELECTRICAL CHARACTERISTICS
(TA = 25
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector Emitter Sustaining Voltage(1)
(IC = 100 mAdc, IB = 0)
2N4036
2N4037
VCEO(sus)
65
40
--
--
Vdc
Collector Base Breakdown Voltage
(IC = 0.1 mAdc)
2N4037
V(BR)CBO
60
--
Vdc
Collector Cutoff Current
(VCE = 85 Vdc, VEB = 1.5 Vdc)
2N4036
(VCE = 30 Vdc, VEB = 1.5 Vdc, TC = 150
C)
2N4037
ICEX
--
--
0.1
100
mAdc
Collector Cutoff Current
(VCB = 90 Vdc, IE = 0)
2N4036
(VCB = 60 Vdc, IE = 0)
2N4037
ICBO
--
--
1.0
0.25
Adc
Emitter Cutoff Current
(VEB = 7.0 Vdc, IC = 0)
2N4036
(VEB = 5.0 Vdc, IC = 0)
2N4037
IEBO
--
--
10
1.0
Adc
1. Pulse Test: Pulse Width
v
300
m
s, Duty Cycle
v
2.0%.
Order this document
by 2N4036/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
2N4036
2N4037
CASE 7904, STYLE 1
TO39 (TO205AD)
1
2
3
Motorola, Inc. 1997
COLLECTOR
3
2
BASE
1
EMITTER
2N4036 2N4037
2
Motorola SmallSignal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25
C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 0.1 mAdc, VCE = 10 Vdc)
2N4036
(IC = 1.0 mAdc, VCE = 10 Vdc)
2N4037
(IC = 150 mAdc, VCE = 10 Vdc)(1)
2N4036
2N4037
(IC = 150 mAdc, VCE = 2.0 Vdc)(1)
2N4036
(IC = 500 mAdc, VCE = 10 Vdc)(1)
2N4036
hFE
20
15
40
50
20
20
--
--
140
250
200
--
--
Collector Emitter Saturation Voltage(1)
2N4036
(IC = 150 mAdc, IB = 15 mAdc)
2N4037
VCE(sat)
--
--
0.65
1.4
Vdc
Base Emitter Saturation Voltage(1)
(IC = 150 mAdc, IB = 15 mAdc)
2N4036
VBE(sat)
--
1.4
Vdc
Base Emitter On Voltage(1)
(IC = 150 mAdc, VCE = 10 Vdc)
2N4037
VBE(on)
--
1.5
Vdc
SMALL SIGNAL CHARACTERISTICS
CollectorBase Capacitance
(VCB = 10 Vdc, f = 1.0 MHz)
2N4037
Ccb
--
30
pF
Current Gain -- High Frequency
2N4036
(IC = 50 mAdc, VCE = 10 Vdc, f = 20 MHz)
2N4037
|hfe|
3.0
3.0
--
10
--
SWITCHING CHARACTERISTICS
Rise Time
(IB1 = 15 mAdc)
2N4036
tr
--
70
ns
Storage Time
(IB2 = 15 mAdc)
2N4036
ts
--
600
ns
Fall Time
(IB2 = 15 mAdc)
2N4036
tf
--
100
ns
TurnOn Time
(IB1 = IB2)
2N4036
ton
--
110
ns
TurnOff Time
(IB1 = IB2)
2N4036
toff
--
700
ns
1. Pulse Test: Pulse Width
v
300
m
s, Duty Cycle
v
2.0%.
2N4036 2N4037
3
Motorola SmallSignal Transistors, FETs and Diodes Device Data
300
s
500
s
1.0 ms
50
s
100
s
DC OPERATION
PULSED OPERATION*
9.3
5.0
3.0
2.0
1.0
7.0
h
FE
, NORMALIZED DC CURRENT
GAIN
P
T
, MAXIMUM
TRANSIST
OR
DISSIP
A
TION (W)
I CBO
, COLLECT
OR CUT
OFF CURRENT
(mA)
I C
, COLLECT
OR
CURRENT
(mA)
h
FE
, SMALLSIGNAL
FOR
W
ARD
CURRENT
TRANSFER RA
TIO
I C
, COLLECT
OR
CURRENT
(A)
0.1
Figure 1. Current Gain Characteristics versus
CollectorEmitter Voltage
IC, COLLECTOR CURRENT (mA)
75
Figure 2. Dissipation Derating Curve
CASE OR AMBIENT TEMPERATURE (TC OR TA)
C
10
7.0
200
TJ, JUNCTION TEMPERATURE (
C)
0.5
VCE(sat), COLLECTORTOEMITTER SATURATION VOLTAGE (V)
10 5
400
Figure 3. Typical CollectorCutoff Current
versus Junction Temperature
Figure 4. Typical SaturationVoltage
Characteristics
100
IC, COLLECTOR CURRENT (mA)
100
VCE, COLLECTORTOEMITTER VOLTAGE (V)
8.0
0.01
Figure 5. Typical SmallSignal Beta
Characteristics
Figure 6. Maximum Safe Operating Areas
(SOA)
1.0
0.1
1.0
10
100
VCE = 10 V
AMBIENT TEMPERATURE (TA) = 25
C
(AT TA)
(AT TC)
6.0
5.0
4.0
3.0
2.0
1.0
0
25 0
50
100
150
200
10 6
10 7
10 8
10 9
1010
175
150
125
100
75
50
25
0
COLLECTORTOBASE
VOLTAGE 40 V
20 V
600
200
0
0.15
0.25
0.35
AMBIENT TEMPERATURE (TA) = 25
C
COLLECTOR CURRENT (IC) = 10
BASE CURRENT (IB)
1000
10
1.0
10
6.0
4.0
2.0
0
COLLECTORTOEMITTER VOLTAGE
(VCE) = 10 V
FREQUENCY = 20 MHz
AMBIENT TEMPERATURE (TA) = 25
C
CASE TEMPERATURE (TC) = 25
C
(CURVES MUST BE DERATED LINEARLY
WITH INCREASE OF TEMPERATURE)
VCEO MAX = 40 V
(2N4037)
VCEO MAX = 65 V
(2N4036)
*FOR SINGLE
NONREPETITIVE PULSE
0.1
1.0
10
1.0
IC MAX.
(CONTINUOUS)
NORMALIZED
POWER
MULTIPLIER
2N4036 2N4037
4
Motorola SmallSignal Transistors, FETs and Diodes Device Data
PACKAGE DIMENSIONS
CASE 07904
(TO205AD)
ISSUE N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION J MEASURED FROM DIMENSION A
MAXIMUM.
4. DIMENSION B SHALL NOT VARY MORE THAN
0.25 (0.010) IN ZONE R. THIS ZONE
CONTROLLED FOR AUTOMATIC HANDLING.
5. DIMENSION F APPLIES BETWEEN DIMENSION
P AND L. DIMENSION D APPLIES BETWEEN
DIMENSION L AND K MINIMUM. LEAD
DIAMETER IS UNCONTROLLED IN DIMENSION
P AND BEYOND DIMENSION K MINIMUM.
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
SEATING
PLANE
R
E
F
B
C
K
L
P
D
3 PL
T
A
H
M
J
G
2
3
1
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.335
0.370
8.51
9.39
B
0.305
0.335
7.75
8.50
C
0.240
0.260
6.10
6.60
D
0.016
0.021
0.41
0.53
E
0.009
0.041
0.23
1.04
F
0.016
0.019
0.41
0.48
G
0.200 BSC
5.08 BSC
H
0.028
0.034
0.72
0.86
J
0.029
0.045
0.74
1.14
K
0.500
0.750
12.70
19.05
L
0.250
6.35
M
45 BSC
45 BSC
P
0.050
1.27
R
0.100
2.54
_
_
M
A
M
0.36 (0.014)
H
M
T
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2N4036/D
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