1
Motorola SmallSignal Transistors, FETs and Diodes Device Data
Amplifier Transistor
PNP Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector Emitter Voltage
VCEO
50
Vdc
Collector Base Voltage
VCBO
50
Vdc
Emitter Base Voltage
VEBO
3.0
Vdc
Collector Current -- Continuous
IC
50
mAdc
Total Device Dissipation @ TA = 25
C
Derate above 25
C
PD
625
5.0
mW
mW/
C
Total Device Dissipation @ TC = 25
C
Derate above 25
C
PD
1.5
12
Watts
mW/
C
Operating and Storage Junction
Temperature Range
TJ, Tstg
55 to +150
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
R
q
JA
200
C/W
Thermal Resistance, Junction to Case
R
q
JC
83.3
C/W
ELECTRICAL CHARACTERISTICS
(TA = 25
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
50
--
Vdc
Collector Base Breakdown Voltage
(IC = 100
Adc, IE = 0)
V(BR)CBO
50
--
Vdc
Collector Cutoff Current
(VCB = 35 Vdc, IE = 0)
ICBO
--
50
nAdc
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0)
IEBO
--
50
nAdc
1. Pulse Test: Pulse Width
300
m
s, Duty Cycle
2.0%.
Preferred devices are Motorola recommended choices for future use and best overall value.
Order this document
by 2N5087/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
2N5087
Motorola Preferred Device
CASE 2904, STYLE 1
TO92 (TO226AA)
1
2
3
Motorola, Inc. 1997
COLLECTOR
3
2
BASE
1
EMITTER
(Replaces 2N5086/D)
2N5087
2
Motorola SmallSignal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25
C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 100
Adc, VCE = 5.0 Vdc)
(IC = 1.0 mAdc, VCE = 5.0 Vdc)
(IC = 10 mAdc, VCE = 5.0 Vdc)(1)
hFE
250
250
250
800
--
--
--
Collector Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
VCE(sat)
--
0.3
Vdc
Base Emitter On Voltage
(IC = 1.0 mAdc, VCE = 5.0 Vdc)
VBE(on)
--
0.85
Vdc
SMALL SIGNAL CHARACTERISTICS
Current Gain -- Bandwidth Product
(IC = 500
Adc, VCE = 5.0 Vdc, f = 20 MHz)
fT
40
--
MHz
CollectorBase Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Ccb
--
4.0
pF
SmallSignal Current Gain
(IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz)
hfe
250
900
--
Noise Figure
(IC = 20
Adc, VCE = 5.0 Vdc, RS = 1.0 k
, f = 1.0 kHz)
(IC = 100
Adc, VCE = 5.0 Vdc, RS = 3.0 k
, f = 1.0 kHz)
NF
--
--
2.0
2.0
dB
1. Pulse Test: Pulse Width
300
m
s, Duty Cycle
2.0%.
2N5087
3
Motorola SmallSignal Transistors, FETs and Diodes Device Data
TYPICAL NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25
C)
Figure 1. Noise Voltage
f, FREQUENCY (Hz)
5.0
7.0
10
3.0
Figure 2. Noise Current
f, FREQUENCY (Hz)
1.0
10
20
50
100
200
500
1.0 k
2.0 k
5.0 k
10 k
1.0
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.1
BANDWIDTH = 1.0 Hz
RS
0
IC = 10
A
100
A
e
n
, NOISE VOL
T
AGE
(nV)
I n
, NOISE CURRENT
(pA)
30
A
BANDWIDTH = 1.0 Hz
RS
IC = 1.0 mA
300
A
100
A
30
A
10
A
10
20
50
100
200
500
1.0 k 2.0 k
5.0 k
10 k
2.0
1.0 mA
0.2
300
A
NOISE FIGURE CONTOURS
(VCE = 5.0 Vdc, TA = 25
C)
500 k
100
200
500
1.0 k
10 k
5.0 k
20 k
50 k
100 k
200 k
2.0 k
1.0 M
500 k
100
200
500
1.0 k
10 k
5.0 k
20 k
50 k
100 k
200 k
2.0 k
1.0 M
Figure 3. Narrow Band, 100 Hz
IC, COLLECTOR CURRENT (
A)
Figure 4. Narrow Band, 1.0 kHz
IC, COLLECTOR CURRENT (
A)
10
0.5 dB
BANDWIDTH = 1.0 Hz
R
S
, SOURCE RESIST
ANCE
(OHMS)
R
S
, SOURCE RESIST
ANCE
(OHMS)
Figure 5. Wideband
IC, COLLECTOR CURRENT (
A)
10
10 Hz to 15.7 kHz
R
S
, SOURCE RESIST
ANCE
(OHMS)
Noise Figure is Defined as:
NF
+
20 log10
en2
)
4KTRS
)
In
2RS2
4KTRS
1 2
= Noise Voltage of the Transistor referred to the input. (Figure 3)
= Noise Current of the Transistor referred to the input. (Figure 4)
= Boltzman's Constant (1.38 x 1023 j/
K)
= Temperature of the Source Resistance (
K)
= Source Resistance (Ohms)
en
In
K
T
RS
1.0 dB
2.0 dB
3.0 dB
20
30
50 70 100
200 300
500 700 1.0 k
10
20
30
50 70 100
200 300
500 700 1.0 k
500 k
100
200
500
1.0 k
10 k
5.0 k
20 k
50 k
100 k
200 k
2.0 k
1.0 M
20
30
50
70
100
200 300
500 700 1.0 k
BANDWIDTH = 1.0 Hz
5.0 dB
0.5 dB
1.0 dB
2.0 dB
3.0 dB
5.0 dB
0.5 dB
1.0 dB
2.0 dB
3.0 dB
5.0 dB
2N5087
4
Motorola SmallSignal Transistors, FETs and Diodes Device Data
TYPICAL STATIC CHARACTERISTICS
Figure 6. DC Current Gain
IC, COLLECTOR CURRENT (mA)
400
0.003
h , DC CURRENT
GAIN
FE
TJ = 125
C
55
C
25
C
VCE = 1.0 V
VCE = 10 V
Figure 7. Collector Saturation Region
IC, COLLECTOR CURRENT (mA)
1.4
Figure 8. Collector Characteristics
IC, COLLECTOR CURRENT (mA)
V
,
VOL
T
AGE
(VOL
TS)
1.0
2.0
5.0
10
20
50
1.6
100
TJ = 25
C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE(on) @ VCE = 1.0 V
*
q
VC for VCE(sat)
q
VB for VBE
0.1
0.2
0.5
Figure 9. "On" Voltages
IB, BASE CURRENT (mA)
0.4
0.6
0.8
1.0
0.2
0
V
CE
, COLLECT
OREMITTER VOL
T
AGE (VOL
TS)
0.002
TA = 25
C
IC = 1.0 mA
10 mA
100 mA
Figure 10. Temperature Coefficients
50 mA
VCE, COLLECTOREMITTER VOLTAGE (VOLTS)
40
60
80
100
20
0
0
I C
, COLLECT
OR
CURRENT
(mA)
TA = 25
C
PULSE WIDTH = 300
s
DUTY CYCLE
2.0%
IB = 400
A
350
A
300
A
250
A
200
A
*APPLIES for IC/IB
hFE/2
25
C to 125
C
55
C to 25
C
25
C to 125
C
55
C to 25
C
40
60
0.005
0.01
0.02 0.03
0.05 0.07 0.1
0.2
0.3
0.5 0.7
1.0
2.0
3.0
5.0 7.0
10
20
30
50 70 100
0.005 0.01 0.02 0.05 0.1 0.2
0.5
1.0 2.0
5.0 10
20
5.0
10
15
20
25
30
35
40
1.2
1.0
0.8
0.6
0.4
0.2
0
2.4
0.8
0
1.6
0.8
1.0
2.0
5.0
10
20
50
100
0.1
0.2
0.5
200
100
80
V
, TEMPERA
TURE COEFFICIENTS (mV/
C)
150
A
100
A
50
A
2N5087
5
Motorola SmallSignal Transistors, FETs and Diodes Device Data
TYPICAL DYNAMIC CHARACTERISTICS
C, CAP
ACIT
ANCE
(pF)
Figure 11. TurnOn Time
IC, COLLECTOR CURRENT (mA)
500
Figure 12. TurnOff Time
IC, COLLECTOR CURRENT (mA)
2.0
5.0
10
20
30
50
1000
Figure 13. CurrentGain -- Bandwidth Product
IC, COLLECTOR CURRENT (mA)
Figure 14. Capacitance
VR, REVERSE VOLTAGE (VOLTS)
Figure 15. Input Impedance
IC, COLLECTOR CURRENT (mA)
Figure 16. Output Admittance
IC, COLLECTOR CURRENT (mA)
3.0
1.0
500
0.5
10
t, TIME
(ns)
t, TIME
(ns)
f
,
CURRENTGAIN -- BANDWIDTH PRODUCT
(MHz)
T
h , OUTPUT
ADMITT
ANCE ( mhos)
oe
m
h ie
, INPUT
IMPEDANCE (k
)
5.0
7.0
10
20
30
50
70
100
300
7.0
70
100
VCC = 3.0 V
IC/IB = 10
TJ = 25
C
td @ VBE(off) = 0.5 V
tr
10
20
30
50
70
100
200
300
500
700
2.0
1.0
VCC = 3.0 V
IC/IB = 10
IB1 = IB2
TJ = 25
C
ts
tf
50
70
100
200
300
0.7 1.0
2.0
3.0
5.0 7.0
10
20
30
50
TJ = 25
C
VCE = 20 V
5.0 V
1.0
2.0
3.0
5.0
7.0
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
0.05
Cib
Cob
2.0
5.0
10
20
50
1.0
0.2
100
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
0.1
0.2
0.5
VCE = 10 Vdc
f = 1.0 kHz
TA = 25
C
2.0
5.0
10
20
50
1.0
2.0
100
3.0
5.0
7.0
10
20
30
50
70
100
200
0.1
0.2
0.5
VCE = 10 Vdc
f = 1.0 kHz
TA = 25
C
200
3.0
5.0 7.0
20
10
30
50 70 100
TJ = 25
C
2N5087
6
Motorola SmallSignal Transistors, FETs and Diodes Device Data
Figure 17. Thermal Response
t, TIME (ms)
1.0
0.01
r(t) TRANSIENT
THERMAL
RESIST
ANCE
(NORMALIZED)
0.01
0.02
0.03
0.05
0.07
0.1
0.2
0.3
0.5
0.7
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
500
1.0 k 2.0 k
5.0 k 10 k
20 k
50 k 100 k
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
DUTY CYCLE, D = t1/t2
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1 (SEE AN569)
Z
JA(t) = r(t)
R
JA
TJ(pk) TA = P(pk) Z
JA(t)
t1
t2
P(pk)
FIGURE 19
Figure 18. ActiveRegion Safe Operating Area
TJ, JUNCTION TEMPERATURE (
C)
104
40
I C
, COLLECT
OR
CURRENT
(nA)
Figure 19. Typical Collector Leakage Current
VCE, COLLECTOREMITTER VOLTAGE (VOLTS)
400
2.0
I C
, COLLECT
OR
CURRENT
(mA)
DESIGN NOTE: USE OF THERMAL RESPONSE DATA
A train of periodical power pulses can be represented by the model
as shown in Figure 19. Using the model and the device thermal
response the normalized effective transient thermal resistance of
Figure 17 was calculated for various duty cycles.
To find Z
JA(t), multiply the value obtained from Figure 17 by the
steady state value R
JA.
Example:
The 2N5087 is dissipating 2.0 watts peak under the following
conditions:
t1 = 1.0 ms, t2 = 5.0 ms (D = 0.2)
Using Figure 17 at a pulse width of 1.0 ms and D = 0.2, the reading of
r(t) is 0.22.
The peak rise in junction temperature is therefore
T = r(t) x P(pk) x R
JA = 0.22 x 2.0 x 200 = 88
C.
For more information, see AN569.
The safe operating area curves indicate ICVCE limits of the
transistor that must be observed for reliable operation. Collector load
lines for specific circuits must fall below the limits indicated by the
applicable curve.
The data of Figure 18 is based upon TJ(pk) = 150
C; TC or TA is
variable depending upon conditions. Pulse curves are valid for duty
cycles to 10% provided TJ(pk)
150
C. TJ(pk) may be calculated from
the data in Figure 17. At high case or ambient temperatures, thermal
limitations will reduce the power than can be handled to values less
than the limitations imposed by second breakdown.
102
101
100
101
102
103
20
0
+ 20
+ 40
+ 60
+ 80 + 100 + 120 + 140 + 160
VCC = 30 V
ICEO
ICBO
AND
ICEX @ VBE(off) = 3.0 V
TA = 25
C
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
1.0 ms
10
s
TC = 25
C
1.0 s
dc
dc
4.0
6.0
10
20
40
60
100
200
4.0
6.0
8.0 10
20
40
TJ = 150
C
100
s
2N5087
7
Motorola SmallSignal Transistors, FETs and Diodes Device Data
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
F
B
K
G
H
SECTION XX
C
V
D
N
N
X X
SEATING
PLANE
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.175
0.205
4.45
5.20
B
0.170
0.210
4.32
5.33
C
0.125
0.165
3.18
4.19
D
0.016
0.022
0.41
0.55
F
0.016
0.019
0.41
0.48
G
0.045
0.055
1.15
1.39
H
0.095
0.105
2.42
2.66
J
0.015
0.020
0.39
0.50
K
0.500
12.70
L
0.250
6.35
N
0.080
0.105
2.04
2.66
P
0.100
2.54
R
0.115
2.93
V
0.135
3.43
1
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
CASE 02904
(TO226AA)
ISSUE AD
2N5087
8
Motorola SmallSignal Transistors, FETs and Diodes Device Data
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals"
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2N5087/D
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