1
Motorola SmallSignal Transistors, FETs and Diodes Device Data
JFET Amplifiers
PChannel -- Depletion
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain Gate Voltage
VDG
40
Vdc
Reverse Gate Source Voltage
VGSR
40
Vdc
Forward Gate Current
IG(f)
10
mAdc
Total Device Dissipation @ TA = 25
C
Derate above 25
C
PD
350
2.8
mW
mW/
C
Junction Temperature Range
TJ
65 to +135
C
Storage Channel Temperature Range
Tstg
65 to +150
C
ELECTRICAL CHARACTERISTICS
(TA = 25
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Gate Source Breakdown Voltage
(IG = 10
Adc, VDS = 0)
2N5460, 2N5461, 2N5462
V(BR)GSS
40
--
--
Vdc
Gate Reverse Current
(VGS = 20 Vdc, VDS = 0)
2N5460, 2N5461, 2N5462
(VGS = 30 Vdc, VDS = 0)
(VGS = 20 Vdc, VDS = 0, TA = 100
C)
2N5460, 2N5461, 2N5462
(VGS = 30 Vdc, VDS = 0, TA = 100
C)
IGSS
--
--
--
--
5.0
1.0
nAdc
Adc
Gate Source Cutoff Voltage
2N5460
(VDS = 15 Vdc, ID = 1.0
Adc)
2N5461
2N5462
VGS(off)
0.75
1.0
1.8
--
--
--
6.0
7.5
9.0
Vdc
Gate Source Voltage
(VDS = 15 Vdc, ID = 0.1 mAdc)
2N5460
(VDS = 15 Vdc, ID = 0.2 mAdc)
2N5461
(VDS = 15 Vdc, ID = 0.4 mAdc)
2N5462
VGS
0.5
0.8
1.5
--
--
--
4.0
4.5
6.0
Vdc
ON CHARACTERISTICS
Zero Gate Voltage Drain Current
2N5460
(VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)
2N5461
2N5462
IDSS
1.0
2.0
4.0
--
--
--
5.0
9.0
16
mAdc
SMALL SIGNAL CHARACTERISTICS
Forward Transfer Admittance
2N5460
(VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)
2N5461
2N5462
yfs
1000
1500
2000
--
--
--
4000
5000
6000
m
mhos
Output Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)
yos
--
--
75
m
mhos
Input Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)
Ciss
--
5.0
7.0
pF
Reverse Transfer Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)
Crss
--
1.0
2.0
pF
FUNCTIONAL CHARACTERISTICS
Noise Figure
(VDS = 15 Vdc, VGS = 0, RG = 1.0 Megohm, f = 100 Hz, BW = 1.0 Hz)
NF
--
1.0
2.5
dB
Equivalent ShortCircuit Input Noise Voltage
(VDS = 15 Vdc, VGS = 0, f = 100 Hz, BW = 1.0 Hz)
en
--
60
115
nV
Hz
Order this document
by 2N5460/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
2N5460
thru
2N5462
CASE 2904, STYLE 7
TO92 (TO226AA)
1
2
3
Motorola, Inc. 1997
2 DRAIN
1 SOURCE
3
GATE
2N5460 thru 2N5462
2
Motorola SmallSignal Transistors, FETs and Diodes Device Data
Y
fs
FOR
W
ARD
TRANSFER
ADMITT
ANCE
(
mhos)
m
Y
fs
FOR
W
ARD
TRANSFER
ADMITT
ANCE
(
mhos)
m
DRAIN CURRENT versus GATE
SOURCE VOLTAGE
FORWARD TRANSFER ADMITTANCE
versus DRAIN CURRENT
I D
, DRAIN CURRENT
(mA)
Y
fs
FOR
W
ARD
TRANSFER
ADMITT
ANCE
(
mhos)
m
4.0
4000
0
0.2
VGS, GATESOURCE VOLTAGE (VOLTS)
Figure 1. VGS(off) = 2.0 Volts
1.0
ID, DRAIN CURRENT (mA)
3.5
I D
, DRAIN CURRENT
(mA)
10
10000
0
1.0
VGS, GATESOURCE VOLTAGE (VOLTS)
Figure 2. VGS(off) = 4.0 Volts
ID, DRAIN CURRENT (mA)
I D
, DRAIN CURRENT
(mA)
16
10000
0
VGS, GATESOURCE VOLTAGE (VOLTS)
Figure 3. VGS(off) = 5.0 Volts
ID, DRAIN CURRENT (mA)
Figure 4. VGS(off) = 2.0 Volts
Figure 5. VGS(off) = 4.0 Volts
Figure 6. VGS(off) = 5.0 Volts
3.0
2.5
2.0
1.5
1.0
0.5
0
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
VDS = 15 V
200
300
500
700
1000
2000
3000
0.2
0.3
0.5
0.7
2.0
3.0
4.0
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0
0.5
1.5
2.0
2.5
3.0
3.5
4.0
500
700
1000
2000
3000
5000
7000
0.5
0.7
1.0
2.0
3.0
5.0
7.0
14
12
10
8.0
6.0
4.0
2.0
0
1.0
2.0
3.0
8.0
4.0
5.0
6.0
7.0
500
700
1000
2000
3000
5000
7000
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
TA = 55
C
25
C
125
C
VDS = 15 V
f = 1.0 kHz
VDS = 15 V
TA = 55
C
25
C
125
C
VDS = 15 V
TA = 55
C
25
C
125
C
VDS = 15 V
f = 1.0 kHz
VDS = 15 V
f = 1.0 kHz
2N5460 thru 2N5462
3
Motorola SmallSignal Transistors, FETs and Diodes Device Data
1000
0.1
0.2
ID, DRAIN CURRENT (mA)
Figure 7. Output Resistance
versus Drain Current
10
0.5
1.0
2.0
5.0
10
r oss
,
OUTPUT
RESIST
ANCE (k ohms)
C, CAP
ACIT
ANCE
(pF)
10
0
VDS, DRAINSOURCE VOLTAGE (VOLTS)
Figure 8. Capacitance versus
DrainSource Voltage
0
NF
, NOISE FIGURE (dB)
5.0
10
f, FREQUENCY (Hz)
Figure 9. Noise Figure versus Frequency
0
NF
, NOISE FIGURE (dB)
10
RS, SOURCE RESISTANCE (k Ohms)
Figure 10. Noise Figure versus
Source Resistance
0
Figure 11. Equivalent Low Frequency Circuit
20
30
50
70
100
200
300
500
700
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10
20
30
40
4.0
3.0
2.0
1.0
20 30 50
100
200 300 500
1000 2000 3000
10,000
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
1.0
10
100
1000
10,000
NOTE:
1. Graphical data is presented for dc conditions. Tabular
data is given for pulsed conditions (Pulse Width = 630 ms,
Duty Cycle = 10%).
* Cosp is Coss in parallel with Series Combination of Ciss and Crss.
vi
Crss
Ciss
ross
Coss
| yfs | vi
COMMON SOURCE
y PARAMETERS FOR FREQUENCIES
BELOW 30 MHz
yis = j
Ciss
yos = j
Cosp * + 1/ross
yfs = yfs |
yrs = j
Crss
VDS = 15 V
f = 1.0 kHz
IDSS = 3.0 mA
6.0 mA
10 mA
f = 1.0 MHz
VGS = 0
Ciss
Coss
Crss
VDS = 15 V
VGS = 0
RG = 1.0 Megohm
VDS = 15 V
VGS = 0
f = 100 Hz
2N5460 thru 2N5462
4
Motorola SmallSignal Transistors, FETs and Diodes Device Data
PACKAGE DIMENSIONS
CASE 02904
(TO226AA)
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
F
B
K
G
H
SECTION XX
C
V
D
N
N
X X
SEATING
PLANE
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.175
0.205
4.45
5.20
B
0.170
0.210
4.32
5.33
C
0.125
0.165
3.18
4.19
D
0.016
0.022
0.41
0.55
F
0.016
0.019
0.41
0.48
G
0.045
0.055
1.15
1.39
H
0.095
0.105
2.42
2.66
J
0.015
0.020
0.39
0.50
K
0.500
12.70
L
0.250
6.35
N
0.080
0.105
2.04
2.66
P
0.100
2.54
R
0.115
2.93
V
0.135
3.43
1
ISSUE AD
STYLE 7:
PIN 1. SOURCE
2. DRAIN
3. GATE
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
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