1
Motorola SmallSignal Transistors, FETs and Diodes Device Data
JFET Switching
NChannel -- Depletion
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain Source Voltage
VDS
25
Vdc
Drain Gate Voltage
VDG
25
Vdc
Gate Source Voltage
VGS
25
Vdc
Forward Gate Current
IGF
10
mAdc
Total Device Dissipation @ TC = 25
C
Derate above 25
C
PD
350
2.8
mW
mW/
C
Junction Temperature Range
TJ
65 to +150
C
Storage Temperature Range
Tstg
65 to +150
C
ELECTRICAL CHARACTERISTICS
(TA = 25
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Gate Source Breakdown Voltage (IG = 10
Adc, VDS = 0)
V(BR)GSS
25
--
Vdc
Gate Reverse Current (VGS = 15 Vdc, VDS = 0)
IGSS
--
1.0
nAdc
Drain Cutoff Current (VDS = 12 Vdc, VGS = 10 V)
Drain Cutoff Current
(VDS = 12 Vdc, VGS = 10 V, TA = 100
C)
ID(off)
--
--
10
2.0
nAdc
Adc
ON CHARACTERISTICS
Zero Gate Voltage Drain Current(1)
(VDS = 15 Vdc, VGS = 0)
IDSS
15
--
mAdc
GateSource Forward Voltage
(IG(f) = 1.0 mAdc, VDS = 0)
VGS(f)
--
1.0
Vdc
DrainSource OnVoltage
(ID = 7.0 mAdc, VGS = 0)
VDS(on)
--
1.5
Vdc
Static DrainSource On Resistance
(ID = 0.1 mAdc, VGS = 0)
rDS(on)
--
150
Ohms
SMALL SIGNAL CHARACTERISTICS
SmallSignal DrainSource "ON" Resistance
(VGS = 0, ID = 0, f = 1.0 kHz)
rds(on)
--
150
Ohms
Input Capacitance
(VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)
Ciss
--
5.0
pF
Reverse Transfer Capacitance
(VDS = 0, VGS = 10 Vdc, f = 1.0 MHz)
Crss
--
1.2
pF
SWITCHING CHARACTERISTICS
TurnOn Delay Time
(VDD = 10 Vdc, ID(on) = 7.0 mAdc,
V
0 V
10 Vd ) (S
Fi
1)
td(on)
--
5.0
ns
Rise Time
(
)
VGS(on) = 0, VGS(off) = 10 Vdc) (See Figure 1)
tr
--
5.0
ns
TurnOff Delay Time
(VDD = 10 Vdc, ID(on) = 7.0 mAdc,
V
0 V
10 Vd ) (S
Fi
1)
td(off)
--
15
ns
Fall Time
(
)
VGS(on) = 0, VGS(off) = 10 Vdc) (See Figure 1)
tf
--
10
ns
1. Pulse Test: Pulse Width < 300
s, Duty Cycle < 3.0%.
Order this document
by 2N5555/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
CASE 2904, STYLE 5
TO92 (TO226AA)
1
2
3
2N5555
Motorola, Inc. 1997
1 DRAIN
2 SOURCE
3
GATE
2N5555
2
Motorola SmallSignal Transistors, FETs and Diodes Device Data
Figure 1. Switching Times Test Circuit
PULSE
GENERATOR
(50 OHMS)
50 OHM COAXIAL CABLE
1.0 k
50
1.0 k
10 k
VDD
50 OHM
COAXIAL
CABLE
TEKTRONIX
567
SAMPLING
SCOPE
Rin =
50 OHMS
INPUT PULSE
RISE TIME < 1.0 ns
FALL TIME < 1.0 ns
NOMINAL VALUE OF "ON" PULSE WIDTH = 400 ns
DUTY CYCLE
1.0%
GENERATOR SOURCE IMPEDANCE = 50 OHMS
VGS(on)
VGS(off)
INPUT PULSE
FALL TIME
INPUT PULSE
RISE TIME
PULSE WIDTH
90%
90%
50%
10%
50%
10%
td(on)
td(off)
10%
90%
10%
90%
tr
tf
OUTPUT
INPUT
P
G
, POWER GAIN (dB)
POWER GAIN
2.0
ID, DRAIN CURRENT (mA)
Figure 2. Effects of Drain Current
4.0
24
8.0
12
16
20
0
4.0
6.0
8.0
10
12
14
f = 100 MHz
400 MHz
Tchannel = 25
C
VDS = 15 Vdc
VGS = 0 V
Figure 3. 100 MHz and 400 MHz Neutralized Test Circuit
*L1
17 turns, (approx. -- depends upon circuit layout) AWG #28
enameled copper wire, close wound on 9/32
ceramic coil
form. Tuning provided by a powdered iron slug.
*
L2
41/2 turns, AWG #18 enameled copper wire, 5/16
long,
3/8
I.D. (AIR CORE).
*
L3
31/2 turns, AWG #18 enameled copper wire, 1/4
long,
3/8
I.D. (AIR CORE).
**L1
6 turns, (approx. -- depends upon circuit layout) AWG #24
enameled copper wire, close wound on 7/32
ceramic coil
form. Tuning provided by an aluminum slug.
**
L2
1 turn, AWG #16 enameled copper wire, 3/8
I.D.
(AIR CORE).
**
L3
1/2 turn, AWG #16 enameled copper wire, 1/4
I.D.
(AIR CORE).
Adjust VGS for
ID = 50 mA
VGS < 0 Volts
NOTE:
The noise source is a hotcold body
(AIL type 70 or equivalent) with a
test receiver (AIL type 136 or equivalent).
Reference
Designation
VALUE
100 MHz
400 MHz
C1
7.0 pF
1.8 pF
C2
1000 pF
17 pF
C3
3.0 pF
1.0 pF
C4
112 pF
0.88.0 pF
C5
112 pF
0.88.0 pF
C6
0.0015
F
0.001
F
C7
0.0015
F
0.001
F
L1
3.0
H*
0.2
H**
L2
0.15
H*
0.03
H**
L3
0.14
H*
0.022
H**
INPUT
TO 50
SOURCE
NEUTRALIZING
COIL
L1
C5
L3
Rg
C1
C6
C4
L2
C3
TO 500
LOAD
CASE
C7
COMMON
ID = 5.0 mA
VGS
VDS
+15 V
C2
2N5555
3
Motorola SmallSignal Transistors, FETs and Diodes Device Data
NF
, NOISE FIGURE (dB)
2.0
VDS, DRAINSOURCE VOLTAGE (VOLTS)
0
10
2.0
4.0
6.0
8.0
0
4.0
6.0
8.0
10
12
14
ID = 5.0 mA
100 MHz
VDS = 15 Vdc
f1 = 399 MHz
f2 = 400 MHz
NF
, NOISE FIGURE (dB)
2.0
ID, DRAIN CURRENT (mA)
1.5
6.5
2.5
3.5
4.5
5.5
0
4.0
6.0
8.0
10
12
14
Figure 4. Effects of DrainSource Voltage
Figure 5. Effects of Drain Current
NOISE FIGURE
(Tchannel = 25
C)
Pin, INPUT POWER PER TONE (dB)
+ 40
Figure 6. Third Order Intermodulation Distortion
P
, OUTPUT
POWER PER
T
ONE
(dB)
out
16
18
20
f = 400 MHz
f = 400 MHz
100 MHz
VDS = 15 V
VGS = 0 V
+ 20
0
20
40
60
80
100
120
140
160
120
100
80
60
40
20
0
+ 20
3RD ORDER INTERCEPT
FUNDAMENTAL
OUTPUT @ IDSS,
0.25 IDSS
3RD ORDER IMD
OUTPUT @ IDSS,
0.25 IDSS
INTERMODULATION CHARACTERISTICS
2N5555
4
Motorola SmallSignal Transistors, FETs and Diodes Device Data
f, FREQUENCY (MHz)
30
10
bis @ IDSS
f, FREQUENCY (MHz)
5.0
Figure 7. Input Admittance (yis)
Figure 8. Reverse Transfer Admittance (yrs)
COMMON SOURCE CHARACTERISTICS
ADMITTANCE PARAMETERS
(VDS = 15 Vdc, Tchannel = 25
C)
f, FREQUENCY (MHz)
20
f, FREQUENCY (MHz)
10
Figure 9. Forward Transadmittance (yfs)
Figure 10. Output Admittance (yos)
g
is
, INPUT
CONDUCT
ANCE
(mmhos)
20
10
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
20
30
50 70 100
200 300
500 700 1000
b
is
, INPUT
SUSCEPT
ANCE
(mmhos)
g
fs
, FOR
W
ARD
TRANSCONDUCT
ANCE
(mmhos)
|b
fs
|, FOR
W
ARD
SUSCEPT
ANCE
(mmhos)
g
rs
, REVERSE
TRANSADMITT
ANCE
(mmhos)
b
rs
, REVERSE SUSCEPT
ANCE
(mmhos)
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
g
os
, OUTPUT
ADMITT
ANCE
(mhos)
b
os
, OUTPUT
SUSCEPT
ANCE
(mhos)
3.0
0.05
0.07
0.1
0.2
0.3
0.7
0.5
1.0
2.0
10
20
30
50
70
100
200 300
500 700 1000
10
20
30
50 70 100
200 300
500 700 1000
0.01
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
30
50 70
100
200 300
500 700 1000
bis @ 0.25 IDSS
gis @ IDSS
gis @ 0.25 IDSS
brs @ IDSS
0.25 IDSS
grs @ IDSS, 0.25 IDSS
gfs @ IDSS
|bfs| @ IDSS
|bfs| @ 0.25 IDSS
bos @ IDSS and 0.25 IDSS
gos @ IDSS
gos @ 0.25 IDSS
gfs @ 0.25 IDSS
2N5555
5
Motorola SmallSignal Transistors, FETs and Diodes Device Data
Figure 11. S11s
Figure 12. S12s
0
350
340
330
10
20
30
180
190
200
210
170
160
150
320
310
300
290
280
270
260
250
240
230
220
40
50
60
70
80
90
100
110
120
130
140
0
350
340
330
10
20
30
180
190
200
210
170
160
150
320
310
300
290
280
270
260
250
240
230
220
40
50
60
70
80
90
100
110
120
130
140
0
350
340
330
10
20
30
180
190
200
210
170
160
150
320
310
300
290
280
270
260
250
240
230
220
40
50
60
70
80
90
100
110
120
130
140
0
350
340
330
10
20
30
180
190
200
210
170
160
150
320
310
300
290
280
270
260
250
240
230
220
40
50
60
70
80
90
100
110
120
130
140
1.0
0.9
0.8
0.7
0.6
0.4
0.3
0.2
0.1
0.0
1.0
0.9
0.8
0.7
0.6
0.6
0.5
0.4
0.3
0.3
0.4
0.5
0.6
900
900
800
700
600
500
400
300
200
100
800
700
600
500
400
300
200
100
ID = 0.25 IDSS
ID = IDSS
100
200
300
400
600
700
800
900
500
ID = IDSS, 0.25 IDSS
900
500
800
700
600
500
400
300
200
100
ID = 0.25 IDSS
ID = IDSS
100
200
300
400
900
600
700
800
900
800
600
400
300
200
200
100
ID = 0.25 IDSS
ID = IDSS
900
100
500
700
300
400
500
600
700
800
Figure 13. S21s
Figure 14. S22s
COMMON SOURCE CHARACTERISTICS
SPARAMETERS
(VDS = 15 Vdc, Tchannel = 25
C, Data Points in MHz)
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