1
Motorola SmallSignal Transistors, FETs and Diodes Device Data
Amplifier Transistors
PNP Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector Emitter Voltage
VCEO
60
Vdc
Collector Base Voltage
VCBO
60
Vdc
Emitter Base Voltage
VEBO
5.0
Vdc
Collector Current -- Continuous
IC
1.0
Adc
Total Device Dissipation @ TA = 25
C
Derate above 25
C
PD
0.8
4.6
Watts
mW/
C
Total Device Dissipation @ TC = 25
C
Derate above 25
C
PD
3.7
20
Watts
mW/
C
Operating and Storage Junction
Temperature Range
TJ, Tstg
65 to + 200
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
R
q
JA
219
C/W
Thermal Resistance, Junction to Case
R
q
JC
50
C/W
ELECTRICAL CHARACTERISTICS
(TA = 25
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector Cutoff Current
(IE = 0, VCES = 60 Vdc)
(IE = 0, VCES = 60 Vdc, TAmb = 150
C)
ICES
--
--
100
100
nAdc
Adc
Collector Emitter Breakdown Voltage
(IC = 100
Adc, IE = 0)
V(BR)CES
60
--
Vdc
Collector Emitter Breakdown Voltage(1)
(IC = 10 mAdc, IB = 0)
V(BR)CEO
60
--
Vdc
Emitter Base Breakdown Voltage
(IE = 100
m
Adc, IC = 0)
V(BR)EBO
5.0
--
Vdc
1. Pulsed: Pulse Duration = 300
m
s, Duty Cycle = 2.0%.
Order this document
by BC16116/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
BC161-16
CASE 7904, STYLE 1
TO39 (TO205AD)
1
2
3
Motorola, Inc. 1997
COLLECTOR
3
2
BASE
1
EMITTER
(Replaces BC16016/D)
BC161-16
2
Motorola SmallSignal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25
C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain(1)
(IC = 100 mAdc, VCE = 1.0 Vdc)
hFE
100
250
--
Collector Emitter Saturation Voltage(1)
(IC = 1.0 Adc, IB = 0.1 Adc)
VCE(sat)
--
1.0
Vdc
Base Emitter Saturation Voltage(1)
(IC = 1.0 Adc, VCE = 1.0 Vdc)
VBE(on)
--
1.7
Vdc
SMALL SIGNAL CHARACTERISTICS
Gain Bandwidth Product
(IC = 50 mAdc, VCE = 10 Vdc, f = 20 MHz)
fT
50
--
MHz
Input Capacitance
(VEB = 10 Vdc, f = 1.0 MHz)
Cib
--
180
pF
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cobo
--
30
pF
TurnOn Time
(IC = 100 mAdc, IB1 = 5.0
Adc)
ton
--
500
ns
TurnOff Time
(IC = 100 mAdc, IB1 = IB2 = 5.0
Adc)
toff
--
650
ns
1. Pulsed: Pulse Duration = 300
m
s, Duty Cycle = 2.0%.
Figure 1. TurnOn
Figure 2. TurnOff
SWITCHING TIME EQUIVALENT TEST CIRCUITS
200
30 V
59
1N916
PULSE WIDTH = 200 ns
RISE TIME
2.0 ns
DUTY CYCLE
2.0%
RB
RC
SCOPE
200
RB
+ 3.0 V
30 V
59
RC
SCOPE
2 < t1 < 500
s
2 <
t2 < 5.0 ns
2 <
t3 > 1.0
s
DUTY CYCLE = 2.0%
+ 2.0 V
0
10.85 V
0
+ 8.8 V
t1
t2
t3
11.2 V
BC161-16
3
Motorola SmallSignal Transistors, FETs and Diodes Device Data
Figure 3. Capacitances
REVERSE VOLTAGE (VOLTS)
100
0.1
Figure 4. Charge Data
IC, COLLECTOR CURRENT (mA)
VCC = 30 V
IC/IB = 10
Q, CHARGE (nC)
CAP
ACIT
ANCE (pF)
QT
QA
Ceb
Figure 5. Delay Time
IC, COLLECTOR CURRENT (mA)
10
Figure 6. Rise Time
IC, COLLECTOR CURRENT (mA)
TRANSIENT CHARACTERISTICS
25
C
100
C
Ccb
t, TIME
(ns)
t, TIME
(ns)
IC/IB = 10
VBE(off) = 2.0 V
VBE(off) = 0 V
VCC = 30 V
IC/IB = 10
1.0
2.0
3.0
5.0
10
20
30
50
0.2 0.3 0.5 1.0 2.0 3.0 5.0 10
20 30 50
100
10
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20 30
50
100
200 300
500
1000
100
5.0
7.0
10
20
30
50
70
20 30
50 70 100
200 300 500 700 1000
10
20 30
50 70 100
200 300 500 700 1000
100
5.0
7.0
10
20
30
50
70
Figure 7. Storage Time
IC, COLLECTOR CURRENT (mA)
Figure 8. Fall Time
IC, COLLECTOR CURRENT (mA)
200
1000
10
t , F
ALL
TIME
(ns)
f
t , ST
ORAGE
TIME
(ns)
s
IB1 = IB2
IC/IB = 10
VCC = 30 V
ts
= ts 1/3 tf
VCC = 30 V
IC/IB = 10
IB1 = IB2
10
20
30
50
70
100
200
300
500
700
20 30
50 70 100
200 300 500 700 1000
10
20
30
70
50
100
10
20 30
50 70 100
200 300 500 700 1000
BC161-16
4
Motorola SmallSignal Transistors, FETs and Diodes Device Data
SMALL SIGNAL CHARACTERISTICS
NOISE FIGURE
VCE = 10 Vdc, TA = 25
C
Figure 9. Frequency Effects
f, FREQUENCY (kHz)
10
0.01
Figure 10. Source Resistance Effects
RS, SOURCE RESISTANCE (OHMS)
NF
, NOISE FIGURE (dB)
NF
, NOISE FIGURE (dB)
10
m
A
IC = 1.0 mA, RS = 100
h PARAMETERS
VCE = 10 Vdc, f = 1.0 kHz, TA = 25
C
Figure 11. Current Gain
IC, COLLECTOR CURRENT (mA)
70
100
200
300
50
Figure 12. Input Impedance
IC, COLLECTOR CURRENT (mA)
h , CURRENT
GAIN
30
fe
100
A, RS = 680
10
A, RS = 7.0 k
RS = OPTIMUM SOURCE RESISTANCE
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0
0.02 0.03 0.05
0.1
0.2 0.3 0.5
1.0
2.0 3.0 5.0
10
100
m
A
IC = 1.0 mA
f = 1.0 kHz
10
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0
50
100
200 300 500
1.0k
2.0k 3.0k 5.0k 10k
20k 30k 50k
20
15
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
This group of graphs illustrates the relationship of the "h" parameters for this series of transistors. To obtain these
curves, 4 units were selected and identified by number - the same units were used to develop curves on each graph.
UNIT 4
3
2
1
30
0.3
0.5
0.7
1.0
5.0
7.0
2.0
3.0
10
20
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
UNIT 1
2
3
4
h ie
, INPUT
IMPEDANCE (k OHMS)
Figure 13. Voltage Feedback Ratio
IC, COLLECTOR CURRENT (mA)
100
Figure 14. Output Admittance
IC, COLLECTOR CURRENT (mA)
h , OUTPUT
ADMITT
ANCE ( mhos)
oe
m
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
UNIT 1
3
2
4
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
UNIT 1
2
3
4
h , VOL
T
AGE
FEEDBACK
RA
TIO (X 10 )
re
4
10
2.0
7.0
5.0
1.0
3.0
20
30
50
70
100
10
2.0
7.0
5.0
1.0
3.0
20
30
50
70
BC161-16
5
Motorola SmallSignal Transistors, FETs and Diodes Device Data
0.1
IC, COLLECTOR CURRENT (mA)
h
FE
, DC CURRENT
GAIN (NORMALIZED)
TJ = 175
C
25
C
55
C
VCE = 1.0 V
VCE = 10 V
STATIC CHARACTERISTICS
0
IB, BASE CURRENT (mA)
Figure 15. DC Current Gain
V
CE
, COLLECT
OREMITTER VOL
T
AGE (VOL
TS)
Figure 16. Collector Saturation Region
10
7.0
5.0
3.0
2.0
1.0
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
100
200
300
500
700 1000
0.2
0.4
0.6
0.8
1.0
0.005 0.007 0.01
0.02 0.03 0.05 0.07 0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20 30
50
IC = 1.0 mA
500 mA
100 mA
10 mA
TJ = 25
C
Figure 17. "On" Voltages
IC, COLLECTOR CURRENT (mA)
Figure 18. Temperature Coefficients
IC, COLLECTOR CURRENT (mA)
0.6
1.0
VBE(sat) @ IC/IB = 10
VOL
T
AGE (VOL
TS)
COEFFICIENT
(mV/
C)
0.4
0.8
1.0
0.2
0
2.0 3.0 5.0 10
20 30 50 100 200 300 500 1000
VBE(on) @ VCE = 1.0 V
VCE(sat) @ IC/IB = 10
1.0
2.0
0
+ 1.0
3.0
4.0
1.0 2.0 3.0 5.0 10
20 30 50 100 200 300 500 1000
VC for VCE(sat)
VB for VBE
BC161-16
6
Motorola SmallSignal Transistors, FETs and Diodes Device Data
RATINGS AND THERMAL DATA
The safe operating area curves indicate ICVCE limits of the
transistor that must be observed for reliable operation. Collector
load lines for specific circuits must fall below the limits indicated by
the applicable curve.
The data of Figure 19 is based upon TJ(pk) = 200
C; TC is variable
depending upon conditions. Pulse curves are valid for duty cycles
to 10% provided TJ(pk)
200
C. At high case temperatures, thermal
limitations will reduce the power that can be handled to values less
than the limitations imposed by second breakdown.
VCE, COLLECTOREMITTER VOLTAGE (VOLTS)
1.0
3.0
2.0 3.0 5.0
10
20 30
50
100
I C
, COLLECT
OR
CURRENT
(AMP)
0.03
0.05
0.07
0.1
0.2
0.3
0.5
1.0
2.0
7.0
70
TJ = 200
C
0.1 ms
1.0 ms
dc
SECONDARY BREAKDOWN
LIMITED
BONDING WIRE LIMITED
THERMALLY LIMITED
TC = 25
C (SINGLE PULSE)
CURVES APPLY BELOW
RATED VCEO
Figure 19. Safe Operating Area
BC161-16
7
Motorola SmallSignal Transistors, FETs and Diodes Device Data
PACKAGE DIMENSIONS
CASE 07904
(TO205AD)
ISSUE N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION J MEASURED FROM DIMENSION A
MAXIMUM.
4. DIMENSION B SHALL NOT VARY MORE THAN
0.25 (0.010) IN ZONE R. THIS ZONE
CONTROLLED FOR AUTOMATIC HANDLING.
5. DIMENSION F APPLIES BETWEEN DIMENSION
P AND L. DIMENSION D APPLIES BETWEEN
DIMENSION L AND K MINIMUM. LEAD
DIAMETER IS UNCONTROLLED IN DIMENSION
P AND BEYOND DIMENSION K MINIMUM.
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
SEATING
PLANE
R
E
F
B
C
K
L
P
D
3 PL
T
A
H
M
J
G
2
3
1
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.335
0.370
8.51
9.39
B
0.305
0.335
7.75
8.50
C
0.240
0.260
6.10
6.60
D
0.016
0.021
0.41
0.53
E
0.009
0.041
0.23
1.04
F
0.016
0.019
0.41
0.48
G
0.200 BSC
5.08 BSC
H
0.028
0.034
0.72
0.86
J
0.029
0.045
0.74
1.14
K
0.500
0.750
12.70
19.05
L
0.250
6.35
M
45 BSC
45 BSC
P
0.050
1.27
R
0.100
2.54
_
_
M
A
M
0.36 (0.014)
H
M
T
BC161-16
8
Motorola SmallSignal Transistors, FETs and Diodes Device Data
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BC16116/D
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