1
Motorola SmallSignal Transistors, FETs and Diodes Device Data
Amplifier Transistors
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol
BC
182
BC
183
BC
184
Unit
Collector Emitter Voltage
VCEO
50
30
30
Vdc
Collector Base Voltage
VCBO
60
45
45
Vdc
Emitter Base Voltage
VEBO
6.0
Vdc
Collector Current -- Continuous
IC
100
mAdc
Total Device Dissipation @ TA = 25
C
Derate above 25
C
PD
350
2.8
mW
mW/
C
Total Device Dissipation @ TC = 25
C
Derate above 25
C
PD
1.0
8.0
Watts
mW/
C
Operating and Storage Junction
Temperature Range
TJ, Tstg
55 to +150
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
R
q
JA
357
C/W
Thermal Resistance, Junction to Case
R
q
JC
125
C/W
ELECTRICAL CHARACTERISTICS
(TA = 25
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage
(IC = 2.0 mA, IB = 0)
BC182
BC183
BC184
V(BR)CEO
50
30
30
--
--
--
--
--
--
V
Collector Base Breakdown Voltage
(IC = 10
m
A, IE = 0)
BC182
BC183
BC184
V(BR)CBO
60
45
45
--
--
--
--
--
--
V
Emitter Base Breakdown Voltage
(IE = 100
m
A, IC = 0)
V(BR)EBO
6.0
--
--
V
Collector Cutoff Current
(VCB = 50 V, VBE = 0)
BC182
(VCB = 30 V, VBE = 0)
BC183
BC184
ICBO
--
--
--
0.2
0.2
0.2
15
15
15
nA
EmitterBase Leakage Current
(VEB = 4.0 V, IC = 0)
IEBO
--
--
15
nA
Order this document
by BC182/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
BC182,A,B
BC183
BC184
CASE 2904, STYLE 17
TO92 (TO226AA)
1
2
3
Motorola, Inc. 1996
COLLECTOR
1
2
BASE
3
EMITTER
BC182,A,B BC183 BC184
2
Motorola SmallSignal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25
C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 10
A, VCE = 5.0 V)
BC182
BC183
BC184
(IC = 2.0 mA, VCE = 5.0 V)
BC182
BC183
BC184
(IC = 100 mA, VCE = 5.0 V)
BC182
BC183
BC184
hFE
40
40
100
120
120
250
80
80
130
--
--
--
--
--
--
--
--
--
--
--
--
500
800
800
--
--
--
--
Collector Emitter On Voltage
(IC = 10 mA, IB = 0.5 mA)
(IC = 100 mA, IB = 5.0 mA)(1)
VCE(sat)
--
--
0.07
0.2
0.25
0.6
V
Base Emitter Saturation Voltage
(IC = 100 mA, IB = 5.0 mA)(1)
VBE(sat)
--
--
1.2
V
BaseEmitter On Voltage
(IC = 100
A, VCE = 5.0 V)
(IC = 2.0 mA, VCE = 5.0 V)
(IC = 100 mA, VCE = 5.0 V)(1)
VBE(on)
--
0.55
--
0.5
0.62
0.83
--
0.7
--
V
DYNAMIC CHARACTERISTICS
Current Gain -- Bandwidth Product
(IC = 0.5 mA, VCE = 3.0 V, f = 100 MHz)
BC182
BC183
BC184
(IC = 10 mA, VCE = 5.0 V, f = 100 MHz)
BC182
BC183
BC184
fT
--
--
--
150
150
150
100
120
140
200
240
280
--
--
--
--
--
--
MHz
Common Base Output Capacitance
(VCB = 10 V, IC = 0, f = 1.0 MHz)
Cob
--
--
5.0
pF
Common Base Input Capacitance
(VEB = 0.5 V, IC = 0, f = 1.0 MHz)
Cib
--
8.0
--
pF
SmallSignal Current Gain
(IC = 2.0 mA, VCE = 5.0 V, f = 1.0 kHz)
BC182
BC183
BC184
BC182A
BC182B
hfe
125
125
240
125
240
--
--
--
--
--
500
900
900
260
500
--
Noise Figure
(IC = 0.2 mA, VCE = 5.0 V, RS = 2.0 k
,
f = 1.0 kHz)
(IC = 0.2 mA, VCE = 5.0 V, RS = 2.0 k
,
BC184
f = 1.0 kHz, f = 200 Hz)
BC182
BC183
BC184
NF
--
--
--
--
2.0
2.0
2.0
2.0
4.0
10
10
4.0
dB
1. Pulse Test: Tp 300 s, Duty Cycle 2.0%.
BC182,A,B BC183 BC184
3
Motorola SmallSignal Transistors, FETs and Diodes Device Data
2.0
1.5
1.0
0.2
0.3
0.4
0.6
0.8
200
0.2
0.5
1.0
2.0
5.0
10
20
50
100
IC, COLLECTOR CURRENT (mAdc)
Figure 1. Normalized DC Current Gain
h
FE
, NORMALIZED DC CURRENT
GAIN
VCE = 10 V
TA = 25
C
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.2
0.1
0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20 30
50 70 100
IC, COLLECTOR CURRENT (mAdc)
Figure 2. "Saturation" and "On" Voltages
V
, VOL
T
AGE (VOL
TS)
TA = 25
C
VBE(sat) @ IC/IB = 10
VBE(on) @ VCE = 10 V
VCE(sat) @ IC/IB = 10
400
20
30
40
60
80
100
200
300
0.5
1.0
0.7
2.0
3.0
5.0 7.0
10
20
30
50
IC, COLLECTOR CURRENT (mAdc)
Figure 3. CurrentGain -- Bandwidth Product
f T
, CURRENTGAIN -- BANDWIDTH PRODUCT
(MHz)
C, CAP
ACIT
ANCE (pF)
10
1.0
2.0
3.0
5.0
7.0
0.4
0.6 0.8 1.0
2.0
4.0
6.0 8.0 10
20
40
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Capacitances
VCE = 10 V
TA = 25
C
TA = 25
C
Cib
Cob
r b
, BASE SPREADING RESIST
ANCE (OHMS)
170
160
150
140
130
120
10
0.1
0.2
0.3
0.5
1.0
2.0
3.0
5.0
IC, COLLECTOR CURRENT (mAdc)
Figure 5. Base Spreading Resistance
VCE = 10 V
f = 1.0 kHz
TA = 25
C
BC182,A,B BC183 BC184
4
Motorola SmallSignal Transistors, FETs and Diodes Device Data
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
F
B
K
G
H
SECTION XX
C
V
D
N
N
X X
SEATING
PLANE
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.175
0.205
4.45
5.20
B
0.170
0.210
4.32
5.33
C
0.125
0.165
3.18
4.19
D
0.016
0.022
0.41
0.55
F
0.016
0.019
0.41
0.48
G
0.045
0.055
1.15
1.39
H
0.095
0.105
2.42
2.66
J
0.015
0.020
0.39
0.50
K
0.500
12.70
L
0.250
6.35
N
0.080
0.105
2.04
2.66
P
0.100
2.54
R
0.115
2.93
V
0.135
3.43
1
CASE 02904
(TO226AA)
ISSUE AD
STYLE 17:
PIN 1. COLLECTOR
2. BASE
3. EMITTER
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different
applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does
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associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
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BC182/D
*BC182/D*
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