1
Motorola SmallSignal Transistors, FETs and Diodes Device Data
Amplifier Transistors
PNP Silicon
MAXIMUM RATINGS
Rating
Symbol
BC
212
BC
213
BC
214
Unit
Collector Emitter Voltage
VCEO
50
30
30
Vdc
Collector Base Voltage
VCBO
60
45
45
Vdc
Emitter Base Voltage
VEBO
5.0
Vdc
Collector Current -- Continuous
IC
100
mAdc
Total Device Dissipation @ TA = 25
C
Derate above 25
C
PD
350
2.8
mW
mW/
C
Total Device Dissipation @ TC = 25
C
Derate above 25
C
PD
1.0
8.0
Watts
mW/
C
Operating and Storage Junction
Temperature Range
TJ, Tstg
55 to +150
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
R
q
JA
357
C/W
Thermal Resistance, Junction to Case
R
q
JC
125
C/W
ELECTRICAL CHARACTERISTICS
(TA = 25
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Collector Emitter Breakdown Voltage
BC212
(IC = 2.0 mAdc, IB = 0)
BC213
BC214
V(BR)CEO
50
30
30
--
--
--
--
--
--
Vdc
Collector Base Breakdown Voltage
BC212
(IC = 10
m
A, IE = 0)
BC213
BC214
V(BR)CBO
60
45
45
--
--
--
--
--
--
Vdc
Emitter Base Breakdown Voltage
BC212
(IE = 10
m
Adc, IC = 0)
BC213
BC214
V(BR)EBO
5
5
5
--
--
--
--
--
--
Vdc
CollectorEmitter Leakage Current
BC212
(VCB = 30 V)
BC213
BC214
ICBO
--
--
--
--
--
--
15
15
15
nAdc
EmitterBase Leakage Current
BC212
(VEB = 4.0 V, IC = 0)
BC213
BC214
IEBO
--
--
--
--
--
--
15
15
15
nAdc
Order this document
by BC212/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
BC212,B
BC213
BC214
CASE 2904, STYLE 17
TO92 (TO226AA)
1
2
3
Motorola, Inc. 1996
COLLECTOR
3
2
BASE
1
EMITTER
BC212,B BC213 BC214
2
Motorola SmallSignal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25
C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 10
Adc, VCE = 5.0 Vdc)
BC212
BC213
BC214
(IC = 2.0 mAdc, VCE = 5.0 Vdc)
BC212
BC213
BC214
(IC = 100 mAdc, VCE = 5.0 Vdc)(1)
BC212, BC214
BC213
hFE
40
40
100
60
80
140
--
--
--
--
--
--
--
--
120
140
--
--
--
--
--
600
--
--
--
Collector Emitter Saturation Voltage
(IC = 10 mAdc, IB = 0.5 mAdc)
(IC = 100 mAdc, IB = 5.0 mAdc)(1)
VCE(sat)
--
--
0.10
0.25
--
0.6
Vdc
Base Emitter Saturation Voltage
(IC = 100 mAdc, IB = 5.0 mAdc)
VBE(sat)
--
1.0
1.4
Vdc
BaseEmitter On Voltage
(IC = 2.0 mAdc, VCE = 5.0 Vdc)
VBE(on)
0.6
0.62
0.72
Vdc
DYNAMIC CHARACTERISTICS
Current Gain -- Bandwidth Product
(IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
BC212
BC214
BC213
fT
--
--
--
280
320
360
--
--
--
MHz
CommonBase Output Capacitance
(VCB = 10 Vdc, IC = 0, f = 1.0 MHz)
Cob
--
--
6.0
pF
Noise Figure
(IC = 0.2 mAdc, VCE = 5.0 Vdc,
RS = 2.0 k
, f = 1.0 kHz)
BC214
(IC = 0.2 mAdc, VCE = 5.0 Vdc,
RS = 2.0 k
, f = 1.0 kHz, f = 200 Hz)
BC212, BC213
NF
--
--
--
--
2
10
dB
SmallSignal Current Gain
(IC = 2.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz)
BC212
BC213
BC214
BC212B
hfe
60
80
140
200
--
--
--
--
--
--
--
400
--
1. Pulse Test: Tp 300 s, Duty Cycle 2.0%.
BC212,B BC213 BC214
3
Motorola SmallSignal Transistors, FETs and Diodes Device Data
2.0
1.5
1.0
0.2
0.3
0.5
0.7
200
0.2
0.5
1.0
2.0
5.0
10
20
50
100
IC, COLLECTOR CURRENT (mAdc)
Figure 1. Normalized DC Current Gain
h
FE
, NORMALIZED DC CURRENT
GAIN
VCE = 10 V
TA = 25
C
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.1
IC, COLLECTOR CURRENT (mAdc)
Figure 2. "Saturation" and "On" Voltages
V
, VOL
T
AGE (VOL
TS)
TA = 25
C
VBE(sat) @ IC/IB = 10
VBE(on) @ VCE = 10 V
VCE(sat) @ IC/IB = 10
400
20
30
40
60
80
100
200
300
IC, COLLECTOR CURRENT (mAdc)
Figure 3. CurrentGain -- Bandwidth Product
f T
, CURRENTGAIN -- BANDWIDTH PRODUCT
(MHz)
C, CAP
ACIT
ANCE (pF)
10
1.0
2.0
3.0
5.0
7.0
0.4
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Capacitances
TA = 25
C
Cib
Cob
r b
, BASE SPREADING RESIST
ANCE (OHMS)
150
140
130
120
110
100
IC, COLLECTOR CURRENT (mAdc)
Figure 5. Output Admittance
0.2
0.5
1.0
2.0
5.0
10
20
50
100
VCE = 10 V
TA = 25
C
0.5
1.0
2.0 3.0
5.0
10
20 30
50
0.6
1.0
2.0
4.0
6.0
10
20 30 40
1.0
IC, COLLECTOR CURRENT (mAdc)
Figure 6. Base Spreading Resistance
VCE = 10 V
f = 1.0 kHz
TA = 25
C
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
VCE = 10 V
f = 1.0 kHz
TA = 25
C
0.1
0.2
0.5
1.0
2.0
5.0
10
0.01
0.03
0.05
0.1
0.3
0.5
h , OUTPUT
ADMITT
ANCE (OHMS)
ob
150
BC212,B BC213 BC214
4
Motorola SmallSignal Transistors, FETs and Diodes Device Data
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
F
B
K
G
H
SECTION XX
C
V
D
N
N
X X
SEATING
PLANE
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.175
0.205
4.45
5.20
B
0.170
0.210
4.32
5.33
C
0.125
0.165
3.18
4.19
D
0.016
0.022
0.41
0.55
F
0.016
0.019
0.41
0.48
G
0.045
0.055
1.15
1.39
H
0.095
0.105
2.42
2.66
J
0.015
0.020
0.39
0.50
K
0.500
12.70
L
0.250
6.35
N
0.080
0.105
2.04
2.66
P
0.100
2.54
R
0.115
2.93
V
0.135
3.43
1
CASE 02904
(TO226AA)
ISSUE AD
STYLE 17:
PIN 1. COLLECTOR
2. BASE
3. EMITTER
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different
applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does
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associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
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BC212/D
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