1
Motorola SmallSignal Transistors, FETs and Diodes Device Data
Amplifier Transistors
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector Emitter Voltage
VCEO
20
Vdc
Collector Emitter Voltage
VCES
25
Vdc
Emitter Base Voltage
VEBO
5.0
Vdc
Collector Current -- Continuous
IC
1.0
Adc
Total Device Dissipation @ TA = 25
C
Derate above 25
C
PD
625
5.0
mW
mW/
C
Total Device Dissipation @ TC = 25
C
Derate above 25
C
PD
1.5
12
Watt
mW/
C
Operating and Storage Junction
Temperature Range
TJ, Tstg
55 to +150
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
R
q
JA
200
C/W
Thermal Resistance, Junction to Case
R
q
JC
83.3
C/W
ELECTRICAL CHARACTERISTICS
(TA = 25
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage
(IC = 10 mA, IB = 0)
V(BR)CEO
20
--
--
Vdc
Collector Base Breakdown Voltage
(IC = 100
A, IE = 0 )
V(BR)CBO
25
--
--
Vdc
Emitter Base Breakdown Voltage
(IE = 100
A, IC = 0)
V(BR)EBO
5.0
--
--
Vdc
Collector Cutoff Current
(VCB = 25 V, IE = 0)
(VCB = 25 V, IE = 0, TJ = 150
C)
ICBO
--
--
--
--
10
1.0
Adc
mAdc
Emitter Cutoff Current
(VEB = 5.0 V, IC = 0)
IEBO
--
--
10
Adc
ON CHARACTERISTICS
DC Current Gain
(VCE = 10 V, IC = 5.0 mA)
(VCE = 1.0 V, IC = 0.5 A)
(VCE = 1.0 V, IC = 1.0 A)
hFE
50
85
60
--
--
--
--
375
--
--
Bandwidth Product (IC = 10 mA, VCE = 5.0 V, f = 20 MHz)
fT
65
--
--
MHz
CollectorEmitter Saturation Voltage (IC = 1.0 A, IB = 100 mA)
VCE(sat)
--
--
0.5
V
BaseEmitter On Voltage (IC = 1.0 A, VCE = 1.0 V)
VBE(on)
--
--
1.0
V
Order this document
by BC368/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
NPN
BC368
PNP
BC369
CASE 2904, STYLE 14
TO92 (TO226AA)
1
2
3
Voltage and current are negative
for PNP transistors
Motorola, Inc. 1996
COLLECTOR
2
3
BASE
1
EMITTER
COLLECTOR
2
3
BASE
1
EMITTER
NPN
PNP
NPN BC368 PNP BC369
2
Motorola SmallSignal Transistors, FETs and Diodes Device Data
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
IB, BASE CURRENT (mA)
Figure 2. Collector Saturation Region
IC, COLLECTOR CURRENT (mA)
Figure 3. "On" Voltages
160
40
0
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Temperature Coefficient
0.8
IC, COLLECTOR CURRENT (mA)
Figure 5. CurrentGain -- Bandwidth Product
Cobo
Cibo
5.0
1.0
2.4
2.0
1.2
V
CE
, COLLECT
OR VOL
T
AGE (VOL
TS)
V
, VOL
T
AGE (VOL
TS)
VB
,
TEMPERA
TURE COEFFICIENT
(mV/
C)
C, CAP
ACIT
ANCE (pF)
1.0
0.8
0.6
0.4
0.2
0
0.01
0.1
10
100
1.0
1.0
0.8
0.6
0.4
0.2
0
1.0
10
1000
100
10
2.0
TJ = 25
C
IC = 10 mA
TJ = 25
C
VBE(on) @ VCE = 1.0 V
VCE(sat) @ IC/IB = 10
VB for VBE
Cibo
h
FE
, CURRENT
GAIN
200
20
1000
10
50
100
100
20
VCE = 1.0 V
TJ = 25
C
70
50
200
500
0.02
0.05
0.2
0.5
2.0
5.0
20
50
50 mA
100 mA
250 mA
500 mA
1000 mA
2.0
5.0
20
50
200
500
1.6
2.8
1.0
10
1000
100
2.0
5.0
20
50
200
500
120
80
15
3.0
20
4.0
25
5.0
TJ = 25
C
Cobo
300
70
30
IC, COLLECTOR CURRENT (mA)
Figure 6. Capacitance
10
20
50
200
100
100
200
500
f T
, CURRENTGAIN -- BANDWIDTH PRODUCT
(MHz)
50
1000
VCE = 10 V
TJ = 25
C
f = 20 MHz
VBE(sat) @ IC/IB = 10
NPN BC368 PNP BC369
3
Motorola SmallSignal Transistors, FETs and Diodes Device Data
PACKAGE DIMENSIONS
STYLE 14:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
F
B
K
G
H
SECTION XX
C
V
D
N
N
X X
SEATING
PLANE
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.175
0.205
4.45
5.20
B
0.170
0.210
4.32
5.33
C
0.125
0.165
3.18
4.19
D
0.016
0.022
0.41
0.55
F
0.016
0.019
0.41
0.48
G
0.045
0.055
1.15
1.39
H
0.095
0.105
2.42
2.66
J
0.015
0.020
0.39
0.50
K
0.500
12.70
L
0.250
6.35
N
0.080
0.105
2.04
2.66
P
0.100
2.54
R
0.115
2.93
V
0.135
3.43
1
CASE 02904
(TO226AA)
ISSUE AD
NPN BC368 PNP BC369
4
Motorola SmallSignal Transistors, FETs and Diodes Device Data
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BC368/D
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