1
Motorola SmallSignal Transistors, FETs and Diodes Device Data
High Voltage
Darlington Transistors
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol
BC372
BC373
Unit
Collector Emitter Voltage
VCES
100
80
Vdc
Collector Base Voltage
VCBO
100
80
Vdc
Emitter Base Voltage
VEBO
12
Vdc
Collector Current -- Continuous
IC
1.0
Adc
Total Device Dissipation @ TA = 25
C
Derate above 25
C
PD
625
5.0
mW
mW/
C
Total Device Dissipation @ TC = 25
C
Derate above 25
C
PD
1.5
12
Watt
mW/
C
Operating and Storage Junction
Temperature Range
TJ, Tstg
55 to +150
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
R
q
JA
200
C/W
Thermal Resistance, Junction to Case
R
q
JC
83.3
C/W
ELECTRICAL CHARACTERISTICS
(TA = 25
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(1)
(IC = 100
m
Adc, IB = 0)
BC372
BC373
V(BR)CES
100
80
--
--
--
--
Vdc
Collector Base Breakdown Voltage
(IC = 100
m
Adc, IE = 0)
BC372
BC373
V(BR)CBO
100
80
--
--
--
--
Vdc
Emitter Base Breakdown Voltage
(IE = 10
m
Adc, IC = 0)
V(BR)EBO
12
--
--
Vdc
Collector Cutoff Current
(VCB = 80 Vdc, IE = 0)
BC372
(VCB = 60 Vdc, IE = 0)
BC373
ICBO
--
--
--
--
100
100
nAdc
Emitter Cutoff Current
(VEB = 10 V, IC = 0)
IEBO
--
--
100
nAdc
1. Pulse Test: Pulse Width = 300
m
s, Duty Cycle 2.0%.
Order this document
by BC372/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
BC372
BC373
CASE 2904, STYLE 1
TO92 (TO226AA)
1
2
3
Motorola, Inc. 1996
COLLECTOR 3
BASE
2
EMITTER 1
BC372 BC373
2
Motorola SmallSignal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25
C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS(1)
DC Current Gain
(IC = 250 mAdc, VCE = 5.0 Vdc)
(IC = 100 mAdc, VCE = 5.0 Vdc)
hFE
8.0
10
--
--
--
160
K
Collector Emitter Saturation Voltage
(IC = 250 mAdc, IB = 0.25 mAdc)
VCE(sat)
--
1.0
1.1
Vdc
Base Emitter Saturation Voltage
(IC = 250 mAdc, IB = 0.25 mAdc)
VBE(sat)
--
1.4
2.0
Vdc
DYNAMIC CHARACTERISTICS
CurrentGain Bandwidth Product
(IC = 100 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
fT
100
200
--
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cob
--
10
25
pF
Noise Figure
(IC = 1.0 mAdc, VCE = 5.0 Vdc, Rg = 100 k ohm, f = 1.0 kHz)
NF
--
2.0
--
dB
1. Pulse Test: Pulse Width = 300
m
s, Duty Cycle 2.0%.
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
100 K
1 K
1
h
FE
, DC CURRENT
GAIN
IC, COLLECTOR CURRENT (mA)
Figure 2. "Saturation" and "On" Voltages
VOL
T
AGE (V)
1.6
1.2
1
0
5
100
10
500
10
100
1000
10 K
TA = 125
C
25
C
55
C
VCE = 5 V
1.4
0.8
0.6
VBE(sat) @ IC/IB = 100
0.2
VBE(on) @ VCE = 5 V
VCE(sat) @ IC/IB = 100
0.4
Figure 3. CurrentGain -- Bandwidth Product
IC, COLLECTOR CURRENT (mA)
1000
100
10
VCE = 5 V
TJ = 25
C
f
, CURRENTGAIN -- BANDWIDTH PRODUCT
(MHz)
T
0.6
10
1
600
100
C, CAP
ACIT
ANCE (pF)
Figure 4. Capacitances
VR, REVERSE VOLTAGE (VOLTS)
10
0.1
100
Cib
100
1
10
Cob
BC372 BC373
3
Motorola SmallSignal Transistors, FETs and Diodes Device Data
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
F
B
K
G
H
SECTION XX
C
V
D
N
N
X X
SEATING
PLANE
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.175
0.205
4.45
5.20
B
0.170
0.210
4.32
5.33
C
0.125
0.165
3.18
4.19
D
0.016
0.022
0.41
0.55
F
0.016
0.019
0.41
0.48
G
0.045
0.055
1.15
1.39
H
0.095
0.105
2.42
2.66
J
0.015
0.020
0.39
0.50
K
0.500
12.70
L
0.250
6.35
N
0.080
0.105
2.04
2.66
P
0.100
2.54
R
0.115
2.93
V
0.135
3.43
1
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
CASE 02904
(TO226AA)
ISSUE AD
BC372 BC373
4
Motorola SmallSignal Transistors, FETs and Diodes Device Data
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BC372/D
*BC372/D*
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