1
Motorola SmallSignal Transistors, FETs and Diodes Device Data
Low Noise Transistors
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol
BC549
BC550
Unit
Collector Emitter Voltage
VCEO
30
45
Vdc
Collector Base Voltage
VCBO
30
50
Vdc
Emitter Base Voltage
VEBO
5.0
Vdc
Collector Current -- Continuous
IC
100
mAdc
Total Device Dissipation @ TA = 25
C
Derate above 25
C
PD
625
5.0
mW
mW/
C
Total Device Dissipation @ TC = 25
C
Derate above 25
C
PD
1.5
12
Watt
mW/
C
Operating and Storage Junction
Temperature Range
TJ, Tstg
55 to +150
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
R
q
JA
200
C/W
Thermal Resistance, Junction to Case
R
q
JC
83.3
C/W
ELECTRICAL CHARACTERISTICS
(TA = 25
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage
(IC = 10 mAdc, IB = 0)
BC549B,C
BC550B,C
V(BR)CEO
30
45
--
--
--
--
Vdc
Collector Base Breakdown Voltage
(IC = 10
Adc, IE = 0)
BC549B,C
BC550B,C
V(BR)CBO
30
50
--
--
--
--
Vdc
Emitter Base Breakdown Voltage
(IE = 10
m
Adc, IC = 0)
V(BR)EBO
5.0
--
--
Vdc
Collector Cutoff Current
(VCB = 30 V, IE = 0)
(VCB = 30 V, IE = 0, TA = +125
C)
ICBO
--
--
--
--
15
5.0
nAdc
Adc
Emitter Cutoff Current
(VEB = 4.0 Vdc, IC = 0)
IEBO
--
--
15
nAdc
Order this document
by BC549B/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
BC549B,C
BC550B,C
CASE 2904, STYLE 17
TO92 (TO226AA)
1
2
3
Motorola, Inc. 1996
COLLECTOR
1
2
BASE
3
EMITTER
BC549B,C BC550B,C
2
Motorola SmallSignal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25
C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 10
Adc, VCE = 5.0 Vdc)
BC549B/550B
BC549C/550C
(IC = 2.0 mAdc, VCE = 5.0 Vdc)
BC549B/550B
BC549C/550C
hFE
100
100
200
420
150
270
290
500
--
--
450
800
--
Collector Emitter Saturation Voltage
(IC = 10 mAdc, IB = 0.5 mAdc)
(IC = 10 mAdc, IB = see note 1)
(IC = 100 mAdc, IB = 5.0 mAdc, see note 2)
VCE(sat)
--
--
--
0.075
0.3
0.25
0.25
0.6
0.6
Vdc
BaseEmitter Saturation Voltage
(IC = 100 mAdc, IB = 5.0 mAdc)
VBE(sat)
--
1.1
--
Vdc
BaseEmitter On Voltage
(IC = 10
Adc, VCE = 5.0 Vdc)
(IC = 100
Adc, VCE = 5.0 Vdc)
(IC = 2.0 mAdc, VCE = 5.0 Vdc)
VBE(on)
--
--
0.55
0.52
0.55
0.62
--
--
0.7
Vdc
SMALLSIGNAL CHARACTERISTICS
Current Gain -- Bandwidth Product
(IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
fT
--
250
--
MHz
CollectorBase Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Ccbo
--
2.5
--
pF
SmallSignal Current Gain
(IC = 2.0 mAdc, VCE = 5.0 V, f = 1.0 kHz)
BC549B/BC550B
BC549C/BC550C
hfe
240
450
330
600
500
900
--
Noise Figure
(IC = 200
Adc, VCE = 5.0 Vdc, RS = 2.0 k
, f = 1.0 kHz)
(IC = 200
Adc, VCE = 5.0 Vdc, RS = 100 k
, f = 1.0 kHz)
NF1
NF2
--
--
0.6
--
2.5
10
dB
NOTES:
1. IB is value for which IC = 11 mA at VCE = 1.0 V.
2. Pulse test = 300
s Duty cycle = 2%.
RS
in
en
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
BC549B,C BC550B,C
3
Motorola SmallSignal Transistors, FETs and Diodes Device Data
2.0
1.5
1.0
0.2
0.3
0.4
0.6
0.8
200
0.2
0.5
1.0
2.0
5.0
10
20
50
100
IC, COLLECTOR CURRENT (mAdc)
Figure 2. Normalized DC Current Gain
h
FE
, NORMALIZED DC CURRENT
GAIN
VCE = 10 V
TA = 25
C
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.2
0.1
0.5
1.0
2.0
5.0
10
20
50
100
IC, COLLECTOR CURRENT (mAdc)
Figure 3. "Saturation" and "On" Voltages
V
, VOL
T
AGE (VOL
TS)
TA = 25
C
VBE(sat) @ IC/IB = 10
VBE(on) @ VCE = 10 V
VCE(sat) @ IC/IB = 10
400
20
30
40
60
80
100
200
300
0.5
1.0
0.7
2.0
5.0 7.0
10
20
50
IC, COLLECTOR CURRENT (mAdc)
Figure 4. CurrentGain -- Bandwidth Product
f T
, CURRENTGAIN -- BANDWIDTH PRODUCT
(MHz)
C, CAP
ACIT
ANCE (pF)
10
1.0
2.0
3.0
5.0
7.0
0.4
0.6
1.0
2.0
4.0
10
20
40
VR, REVERSE VOLTAGE (VOLTS)
Figure 5. Capacitance
VCE = 10 V
TA = 25
C
TA = 25
C
Cib
Cob
r b
, BASE SPREADING RESIST
ANCE (OHMS)
170
160
150
140
130
120
10
0.1
0.2
0.5
1.0
2.0
5.0
IC, COLLECTOR CURRENT (mAdc)
Figure 6. Base Spreading Resistance
VCE = 10 V
f = 1.0 kHz
TA = 25
C
BC549B,C BC550B,C
4
Motorola SmallSignal Transistors, FETs and Diodes Device Data
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
F
B
K
G
H
SECTION XX
C
V
D
N
N
X X
SEATING
PLANE
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.175
0.205
4.45
5.20
B
0.170
0.210
4.32
5.33
C
0.125
0.165
3.18
4.19
D
0.016
0.022
0.41
0.55
F
0.016
0.019
0.41
0.48
G
0.045
0.055
1.15
1.39
H
0.095
0.105
2.42
2.66
J
0.015
0.020
0.39
0.50
K
0.500
12.70
L
0.250
6.35
N
0.080
0.105
2.04
2.66
P
0.100
2.54
R
0.115
2.93
V
0.135
3.43
1
CASE 02904
(TO226AA)
ISSUE AD
STYLE 17:
PIN 1. COLLECTOR
2. BASE
3. EMITTER
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different
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BC549B/D
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