1
Motorola SmallSignal Transistors, FETs and Diodes Device Data
Amplifier Transistors
PNP Silicon
MAXIMUM RATINGS
Rating
Symbol
BC
556
BC
557
BC
558
Unit
Collector Emitter Voltage
VCEO
65
45
30
Vdc
Collector Base Voltage
VCBO
80
50
30
Vdc
Emitter Base Voltage
VEBO
5.0
Vdc
Collector Current -- Continuous
IC
100
mAdc
Total Device Dissipation @ TA = 25
C
Derate above 25
C
PD
625
5.0
mW
mW/
C
Total Device Dissipation @ TC = 25
C
Derate above 25
C
PD
1.5
12
Watt
mW/
C
Operating and Storage Junction
Temperature Range
TJ, Tstg
55 to +150
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
R
q
JA
200
C/W
Thermal Resistance, Junction to Case
R
q
JC
83.3
C/W
ELECTRICAL CHARACTERISTICS
(TA = 25
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage
(IC = 2.0 mAdc, IB = 0)
BC556
BC557
BC558
V(BR)CEO
65
45
30
--
--
--
--
--
--
V
Collector Base Breakdown Voltage
(IC = 100
Adc)
BC556
BC557
BC558
V(BR)CBO
80
50
30
--
--
--
--
--
--
V
Emitter Base Breakdown Voltage
(IE = 100
m
Adc, IC = 0)
BC556
BC557
BC558
V(BR)EBO
5.0
5.0
5.0
--
--
--
--
--
--
V
CollectorEmitter Leakage Current
(VCES = 40 V)
BC556
(VCES = 20 V)
BC557
BC558
(VCES = 20 V, TA = 125
C)
BC556
BC557
BC558
ICES
--
--
--
--
--
--
2.0
2.0
2.0
--
--
--
100
100
100
4.0
4.0
4.0
nA
A
Order this document
by BC556/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
BC556,B
BC557A,B,C
BC558B
CASE 2904, STYLE 17
TO92 (TO226AA)
1
2
3
Motorola, Inc. 1996
COLLECTOR
1
2
BASE
3
EMITTER
BC556,B BC557A,B,C BC558B
2
Motorola SmallSignal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25
C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 10
Adc, VCE = 5.0 V)
BC557A
BC556B/557B/558B
BC557C
(IC = 2.0 mAdc, VCE = 5.0 V)
BC556
BC557
BC558
BC557A
BC556B/557B/558B
BC557C
(IC = 100 mAdc, VCE = 5.0 V)
BC557A
BC556B/557B/558B
BC557C
hFE
--
--
--
120
120
120
120
180
420
--
--
--
90
150
270
--
--
--
170
290
500
120
180
300
--
--
--
500
800
800
220
460
800
--
--
--
--
Collector Emitter Saturation Voltage
(IC = 10 mAdc, IB = 0.5 mAdc)
(IC = 10 mAdc, IB = see Note 1)
(IC = 100 mAdc, IB = 5.0 mAdc)
VCE(sat)
--
--
--
0.075
0.3
0.25
0.3
0.6
0.65
V
Base Emitter Saturation Voltage
(IC = 10 mAdc, IB = 0.5 mAdc)
(IC = 100 mAdc, IB = 5.0 mAdc)
VBE(sat)
--
--
0.7
1.0
--
--
V
BaseEmitter On Voltage
(IC = 2.0 mAdc, VCE = 5.0 Vdc)
(IC = 10 mAdc, VCE = 5.0 Vdc)
VBE(on)
0.55
--
0.62
0.7
0.7
0.82
V
SMALLSIGNAL CHARACTERISTICS
Current Gain -- Bandwidth Product
(IC = 10 mA, VCE = 5.0 V, f = 100 MHz)
BC556
BC557
BC558
fT
--
--
--
280
320
360
--
--
--
MHz
Output Capacitance
(VCB = 10 V, IC = 0, f = 1.0 MHz)
Cob
--
3.0
6.0
pF
Noise Figure
(IC = 0.2 mAdc, VCE = 5.0 V,
BC556
RS = 2.0 k
W
, f = 1.0 kHz,
f = 200 Hz)
BC557
BC558
NF
--
--
--
2.0
2.0
2.0
10
10
10
dB
SmallSignal Current Gain
(IC = 2.0 mAdc, VCE = 5.0 V, f = 1.0 kHz)
BC556
BC557/558
BC557A
BC556B/557B/558B
BC557C
hfe
125
125
125
240
450
--
--
220
330
600
500
900
260
500
900
--
Note 1: IC = 10 mAdc on the constant base current characteristics, which yields the point IC = 11 mAdc, VCE = 1.0 V.
BC556,B BC557A,B,C BC558B
3
Motorola SmallSignal Transistors, FETs and Diodes Device Data
BC557/BC558
Figure 1. Normalized DC Current Gain
IC, COLLECTOR CURRENT (mAdc)
2.0
Figure 2. "Saturation" and "On" Voltages
IC, COLLECTOR CURRENT (mAdc)
0.2
0.2
Figure 3. Collector Saturation Region
IB, BASE CURRENT (mA)
Figure 4. BaseEmitter Temperature Coefficient
IC, COLLECTOR CURRENT (mA)
0.6
0.7
0.8
0.9
1.0
0.5
0
0.2
0.4
0.1
0.3
1.6
1.2
2.0
2.8
2.4
1.2
1.6
2.0
0.02
1.0
10
0
20
0.1
0.4
0.8
h
FE
, NORMALIZED DC CURRENT
GAIN
V
, VOL
T
AGE (VOL
TS)
V
CE
, COLLECT
OREMITTER VOL
T
AGE (V)
VB
,
TEMPERA
TURE COEFFICIENT
(mV/
C)
1.5
1.0
0.7
0.5
0.3
0.2
10
100
1.0
TA = 25
C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE(on) @ VCE = 10 V
VCE = 10 V
TA = 25
C
55
C to +125
C
IC = 100 mA
IC = 20 mA
0.5 1.0
2.0
5.0 10
20
50
100 200
0.1 0.2
0.5
1.0
2.0
5.0
10
20
50
100
IC = 200 mA
IC = 50 mA
IC =
10 mA
Figure 5. Capacitances
VR, REVERSE VOLTAGE (VOLTS)
10
Figure 6. CurrentGain Bandwidth Product
IC, COLLECTOR CURRENT (mAdc)
0.4
1.0
80
100
200
300
400
60
20
40
30
7.0
5.0
3.0
2.0
0.5
C, CAP
ACIT
ANCE (pF)
f
, CURRENTGAIN BANDWIDTH PRODUCT
(MHz)
T
TA = 25
C
Cob
Cib
0.6
1.0
2.0
4.0 6.0
10
20 30 40
150
1.0
2.0 3.0
5.0
10
20
30
50
VCE = 10 V
TA = 25
C
TA = 25
C
1.0
BC556,B BC557A,B,C BC558B
4
Motorola SmallSignal Transistors, FETs and Diodes Device Data
BC556
Figure 7. DC Current Gain
IC, COLLECTOR CURRENT (AMP)
Figure 8. "On" Voltage
IC, COLLECTOR CURRENT (mA)
0.8
1.0
0.6
0.2
0.4
1.0
2.0
0.1
1.0
10
200
0.2
0.2
0.5
0.2
1.0
10
200
TJ = 25
C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE @ VCE = 5.0 V
Figure 9. Collector Saturation Region
IB, BASE CURRENT (mA)
Figure 10. BaseEmitter Temperature Coefficient
IC, COLLECTOR CURRENT (mA)
1.0
1.2
1.6
2.0
0.02
1.0
10
0
20
0.1
0.4
0.8
V
CE
, COLLECT
OREMITTER VOL
T
AGE (VOL
TS)
VB
,
TEMPERA
TURE COEFFICIENT
(mV/
C)
0.2
2.0
10
200
1.0
TJ = 25
C
IC =
10 mA
h
FE
, DC CURRENT
GAIN (NORMALIZED)
V
, VOL
T
AGE (VOL
TS)
VCE = 5.0 V
TA = 25
C
0
0.5
2.0
5.0
20
50
100
0.05
0.2
0.5
2.0
5.0
100 mA
20 mA
1.4
1.8
2.2
2.6
3.0
0.5
5.0
20
50
100
55
C to 125
C
VB for VBE
2.0 5.0
20
50 100
Figure 11. Capacitance
VR, REVERSE VOLTAGE (VOLTS)
40
Figure 12. CurrentGain Bandwidth Product
IC, COLLECTOR CURRENT (mA)
0.1 0.2
1.0
50
2.0
2.0
10
100
100
200
500
50
20
20
10
6.0
4.0
1.0
10
100
VCE = 5.0 V
C, CAP
ACIT
ANCE (pF)
f
, CURRENTGAIN BANDWIDTH PRODUCT T
0.5
5.0
20
TJ = 25
C
Cob
Cib
8.0
50 mA
200 mA
BC556,B BC557A,B,C BC558B
5
Motorola SmallSignal Transistors, FETs and Diodes Device Data
Figure 13. Thermal Response
t, TIME (ms)
1.0
r(t),
TRANSIENT
THERMAL
2.0
5.0
1.0
0.5
0.2
0.1
RESIST
ANCE (NORMALIZED)
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
20
50
10
200
500
100
1.0 k
2.0 k
5.0 k
10 k
Figure 14. Active Region -- Safe Operating Area
VCE, COLLECTOREMITTER VOLTAGE (V)
200
1.0
I C
, COLLECT
OR CURRENT
(mA)
TA = 25
C
D = 0.5
0.2
0.1
0.05
SINGLE PULSE
SINGLE PULSE
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
3 ms
TJ = 25
C
Z
JC(t) = (t) R
JC
R
JC = 83.3
C/W MAX
Z
JA(t) = r(t) R
JA
R
JA = 200
C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) TC = P(pk) R
JC(t)
t1
t2
P(pk)
DUTY CYCLE, D = t1/t2
100
50
10
5.0
2.0
5.0
10
30 45 65
100
1 s
BC558
BC557
BC556
The safe operating area curves indicate ICVCE limits of the
transistor that must be observed for reliable operation. Collector load
lines for specific circuits must fall below the limits indicated by the
applicable curve.
The data of Figure 14 is based upon TJ(pk) = 150
C; TC or TA is
variable depending upon conditions. Pulse curves are valid for duty
cycles to 10% provided TJ(pk)
150
C. TJ(pk) may be calculated from
the data in Figure 13. At high case or ambient temperatures, thermal
limitations will reduce the power than can be handled to values less
than the limitations imposed by second breakdown.
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