Motorola SmallSignal Transistors, FETs and Diodes Device Data

General Purpose Transistors

NPN Silicon

These transistors are designed for general purpose amplifier

applications. They are housed in the SOT323/SC70 which is
designed for low power surface mount applications.

MAXIMUM RATINGS

Rating

Symbol

BC846

BC847

BC848

Unit

Collector Emitter Voltage

VCEO

Collector Base Voltage

VCBO

Emitter Base Voltage

VEBO

6.0

5.0

Collector Current -- Continuous

100

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR 5 Board, (1)

TA = 25

150

Thermal Resistance, Junction to Ambient

833

C/W

Total Device Dissipation

2.4

mW/

Junction and Storage Temperature

TJ, Tstg

55 to +150

DEVICE MARKING

BC846AWT1 = 1A; BC846BWT1 = 1B; BC847AWT1 = 1E; BC847BWT1 = 1F;
BC847CWT1 = 1G; BC848AWT1 = 1J; BC848BWT1 = 1K; BC848CWT1 = 1L

ELECTRICAL CHARACTERISTICS

(TA = 25

C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector Emitter Breakdown Voltage

BC846 Series

(IC = 10 mA)

BC847 Series
BC848 Series

V(BR)CEO

65
45
30

--
--
--

Collector Emitter Breakdown Voltage

BC846 Series

(IC = 10

A, VEB = 0)

BC847 Series
BC848 Series

V(BR)CES

80
50
30

--
--
--

Collector Base Breakdown Voltage

BC846 Series

(IC = 10

BC847 Series
BC848 Series

V(BR)CBO

80
50
30

--
--
--

Emitter Base Breakdown Voltage

BC846 Series

(IE = 1.0

BC847 Series
BC848 Series

V(BR)EBO

6.0
6.0
5.0

--
--
--

Collector Cutoff Current (VCB = 30 V)

(VCB = 30 V, TA = 150

ICBO

--
--

5.0

1. FR5 = 1.0 x 0.75 x 0.062 in

Thermal Clad is a trademark of the Bergquist Company.

Order this document

by BC846AWT1/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

BC846AWT1,BWT1

BC847AWT1,BWT1,

CWT1

BC848AWT1,BWT1,

CWT1

CASE 41902, STYLE 3

SOT323/SC70

Motorola, Inc. 1996

COLLECTOR

BASE

EMITTER

BC846AWT1,BWT1 BC847AWT1,BWT1,CWT1 BC848AWT1,BWT1,CWT1

Motorola SmallSignal Transistors, FETs and Diodes Device Data

ELECTRICAL CHARACTERISTICS

(TA = 25

C unless otherwise noted) (Continued)

Characteristic

Symbol

Min

Typ

Max

Unit

ON CHARACTERISTICS

DC Current Gain

BC846A, BC847A, BC848A

(IC = 10

A, VCE = 5.0 V)

BC846B, BC847B, BC848B
BC847C, BC848C

(IC = 2.0 mA, VCE = 5.0 V)

BC846A, BC847A, BC848A
BC846B, BC847B, BC848B
BC847C, BC848C

hFE

--
--
--

110

200
420

150
270

180
290
520

--
--
--

220
450
800

Collector Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)

Collector Emitter Saturation Voltage

(IC = 100 mA, IB = 5.0 mA)

VCE(sat)

--
--

0.25

0.6

Base Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)

Base Emitter Saturation Voltage

(IC = 100 mA, IB = 5.0 mA)

VBE(sat)

--
--

0.7
0.9

--
--

Base Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V)

Base Emitter Voltage

(IC = 10 mA, VCE = 5.0 V)

VBE(on)

580

660

700
770

SMALL SIGNAL CHARACTERISTICS

Current Gain -- Bandwidth Product

(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)

100

MHz

Output Capacitance (VCB = 10 V, f = 1.0 MHz)

Cobo

4.5

Noise Figure (IC = 0.2 mA,

BC846A, BC847A, BC848A

VCE = 5.0 Vdc, RS = 2.0 k

BC846B, BC847B, BC848B

f = 1.0 kHz, BW = 200 Hz)

BC847C, BC848C

--
--

4.0

Figure 1. Normalized DC Current Gain

IC, COLLECTOR CURRENT (mAdc)

2.0

Figure 2. "Saturation" and "On" Voltages

IC, COLLECTOR CURRENT (mAdc)

0.2

0.5

1.0

0.2

100

Figure 3. Collector Saturation Region

IB, BASE CURRENT (mA)

Figure 4. BaseEmitter Temperature Coefficient

IC, COLLECTOR CURRENT (mA)

2.0

5.0

200

0.6

0.7

0.8

0.9

1.0

0.5

0.2

0.4

0.1

0.3

1.6

1.2

2.0

2.8

2.4

1.2

1.6

2.0

0.02

1.0

0.1

0.4

0.8

, NORMALIZED DC CURRENT

GAIN

, VOL

T
AGE (VOL

TS)

, COLLECT

OREMITTER VOL

T
AGE (V)

,
TEMPERA

TURE COEFFICIENT

(mV/

1.5

1.0

0.8

0.6

0.4

0.3

0.2

0.5

1.0

2.0

100

7.0

5.0

3.0

0.7

0.3

0.1

0.2

1.0

100

TA = 25

VBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

VBE(on) @ VCE = 10 V

VCE = 10 V
TA = 25

C to +125

TA = 25

IC = 50 mA

IC = 100 mA

IC = 200 mA

IC =

20 mA

IC =

10 mA

1.0

BC846AWT1,BWT1 BC847AWT1,BWT1,CWT1 BC848AWT1,BWT1,CWT1

Motorola SmallSignal Transistors, FETs and Diodes Device Data

BC847/BC848

Figure 5. Capacitances

VR, REVERSE VOLTAGE (VOLTS)

Figure 6. CurrentGain Bandwidth Product

IC, COLLECTOR CURRENT (mAdc)

0.4

0.6

1.0

Figure 7. DC Current Gain

IC, COLLECTOR CURRENT (mA)

Figure 8. "On" Voltage

IC, COLLECTOR CURRENT (mA)

2.0

6.0

100

200

300

400

0.8

1.0

0.6

0.2

0.4

1.0

2.0

0.1

1.0

100

0.2

0.5

7.0

5.0

3.0

2.0

0.7

1.0

2.0

7.0

5.0

3.0

0.5

0.2

1.0

200

TA = 25

VBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

VBE @ VCE = 5.0 V

VCE = 10 V
TA = 25

Figure 9. Collector Saturation Region

IB, BASE CURRENT (mA)

Figure 10. BaseEmitter Temperature Coefficient

IC, COLLECTOR CURRENT (mA)

1.0

1.2

1.6

2.0

0.02

1.0

0.1

0.4

0.8

, COLLECT

OREMITTER VOL

T
AGE (VOL

TS)

,
TEMPERA

TURE COEFFICIENT

(mV/

0.2

2.0

200

1.0

TA = 25

200 mA

50 mA

IC =

10 mA

, DC CURRENT

GAIN (NORMALIZED)

, VOL

T
AGE (VOL

TS)

C, CAP

ACIT

ANCE (pF)

, CURRENTGAIN BANDWIDTH PRODUCT

(MHz)

0.8

4.0

8.0

TA = 25

Cob

Cib

VCE = 5 V
TA = 25

0.5

2.0

5.0

100

0.05

0.2

0.5

2.0

5.0

100 mA

20 mA

1.4

1.8

2.2

2.6

3.0

0.5

5.0

100

C to 125

VB for VBE

BC846AWT1,BWT1 BC847AWT1,BWT1,CWT1 BC848AWT1,BWT1,CWT1

Motorola SmallSignal Transistors, FETs and Diodes Device Data

INFORMATION FOR USING THE SOT323/SC70 SURFACE MOUNT PACKAGE

MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS

Surface mount board layout is a critical portion of the total

design. The footprint for the semiconductor packages must
be the correct size to insure proper solder connection

interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.

SOT323/SC70

inches

0.035

0.9

0.075

0.7

1.9

0.028

0.65

0.025

0.65

0.025

SOT323/SC70 POWER DISSIPATION

The power dissipation of the SOT323/SC70 is a function

of the pad size. This can vary from the minimum pad size for
soldering to a pad size given for maximum power dissipation.
Power dissipation for a surface mount device is determined
by TJ(max), the maximum rated junction temperature of the
die, R

JA, the thermal resistance from the device junction to

ambient, and the operating temperature, TA. Using the
values provided on the data sheet for the SOT323/SC70
package, PD can be calculated as follows:

PD =

TJ(max) TA

The values for the equation are found in the maximum

ratings table on the data sheet. Substituting these values into
the equation for an ambient temperature TA of 25

C, one can

calculate the power dissipation of the device which in this
case is 150 milliwatts.

PD =

150

C 25

833

C/W

= 150 milliwatts

The 833

C/W for the SOT323/SC70 package assumes

the use of the recommended footprint on a glass epoxy
printed circuit board to achieve a power dissipation of
150 milliwatts. There are other alternatives to achieving
higher power dissipation from the SOT323/SC70
package. Another alternative would be to use a ceramic
substrate or an aluminum core board such as Thermal
Clad

. Using a board material such as Thermal Clad, an

aluminum core board, the power dissipation can be doubled
using the same footprint.

SOLDERING PRECAUTIONS

The melting temperature of solder is higher than the rated

temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within a
short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.

Always preheat the device.

The delta temperature between the preheat and
soldering should be 100

C or less.*

When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering method,
the difference shall be a maximum of 10

The soldering temperature and time shall not exceed
260

C for more than 10 seconds.

When shifting from preheating to soldering, the
maximum temperature gradient shall be 5

C or less.

After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and result
in latent failure due to mechanical stress.

Mechanical stress or shock should not be applied during
cooling.

* Soldering a device without preheating can cause excessive
thermal shock and stress which can result in damage to the
device.

BC846AWT1,BWT1 BC847AWT1,BWT1,CWT1 BC848AWT1,BWT1,CWT1

Motorola SmallSignal Transistors, FETs and Diodes Device Data

PACKAGE DIMENSIONS

CASE 41902

ISSUE G

SOT323/SC70

STYLE 3:

PIN 1. BASE

2. EMITTER
3. COLLECTOR

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

DIM

MIN

MAX

MIN

MAX

MILLIMETERS

INCHES

0.071

0.087

1.80

2.20

0.045

0.053

1.15

1.35

0.035

0.049

0.90

1.25

0.012

0.016

0.30

0.40

0.047

0.055

1.20

1.40

0.000

0.004

0.00

0.10

0.004

0.010

0.10

0.25

0.017 REF

0.425 REF

0.026 BSC

0.650 BSC

0.028 REF

0.700 REF

0.031

0.039

0.80

1.00

0.079

0.087

2.00

2.20

0.012

0.016

0.30

0.40

0.05 (0.002)

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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different
applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does
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associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
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BC846AWT1/D

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