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1
Motorola SmallSignal Transistors, FETs and Diodes Device Data
General Purpose Transistors
PNP Silicon
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT323/SC70 which is
designed for low power surface mount applications.
MAXIMUM RATINGS
Rating
Symbol
BC856
BC857
BC858
Unit
Collector Emitter Voltage
VCEO
65
45
30
V
Collector Base Voltage
VCBO
80
50
30
V
Emitter Base Voltage
VEBO
5.0
5.0
5.0
V
Collector Current -- Continuous
IC
100
100
100
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR 5 Board, (1)
TA = 25
C
PD
150
mW
Thermal Resistance, Junction to Ambient
R
q
JA
833
C/W
Junction and Storage Temperature
TJ, Tstg
55 to +150
C
DEVICE MARKING
BC856AWT1 = 3A; BC856BWT1 = 3B; BC857AWT1 = 3E; BC857BWT1 = 3F;
BC858AWT1 = 3J; BC858BWT1 = 3K; BC858CWT1 = 3L
ELECTRICAL CHARACTERISTICS
(TA = 25
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage
BC856 Series
(IC = 10 mA)
BC857 Series
BC858 Series
V(BR)CEO
65
45
30
--
--
--
--
--
--
V
Collector Emitter Breakdown Voltage
BC856 Series
(IC = 10
A, VEB = 0)
BC857 Series
BC858 Series
V(BR)CES
80
50
30
--
--
--
--
--
--
V
Collector Base Breakdown Voltage
BC856 Series
(IC = 10
m
A)
BC857 Series
BC858 Series
V(BR)CBO
80
50
30
--
--
--
--
--
--
V
Emitter Base Breakdown Voltage
BC856 Series
(IE = 1.0
m
A)
BC857 Series
BC858 Series
V(BR)EBO
5.0
5.0
5.0
--
--
--
--
--
--
V
Collector Cutoff Current (VCB = 30 V)
Collector Cutoff Current
(VCB = 30 V, TA = 150
C)
ICBO
--
--
--
--
15
4.0
nA
A
1. FR5 = 1.0 x 0.75 x 0.062 in
Thermal Clad is a registered trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
Order this document
by BC856AWT1/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
BC856AWT1,BWT1
BC857AWT1,BWT1
BC858AWT1,BWT1,
CWT1
Motorola Preferred Devices
CASE 41902, STYLE 3
SOT323/SC70
1
2
3
Motorola, Inc. 1996
COLLECTOR
3
1
BASE
2
EMITTER
BC856AWT1,BWT1 BC857AWT1,BWT1 BC858AWT1,BWT1,CWT1
2
Motorola SmallSignal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25
C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
BC856A, BC857A, BC585A
(IC = 10
A, VCE = 5.0 V)
BC856A, BC857A, BC858A
BC858C
(IC = 2.0 mA, VCE = 5.0 V)
BC856A, BC857A, BC858A
BC856B, BC857B, BC858B
BC858C
hFE
--
--
--
125
220
420
90
150
270
180
290
520
--
--
--
250
475
800
--
Collector Emitter Saturation Voltage
(IC = 10 mA, IB = 0.5 mA)
(IC = 100 mA, IB = 5.0 mA)
VCE(sat)
--
--
--
--
0.3
0.65
V
Base Emitter Saturation Voltage
(IC = 10 mA, IB = 0.5 mA)
(IC = 100 mA, IB = 5.0 mA)
VBE(sat)
--
--
0.7
0.9
--
--
V
Base Emitter On Voltage
(IC = 2.0 mA, VCE = 5.0 V)
(IC = 10 mA, VCE = 5.0 V)
VBE(on)
0.6
--
--
--
0.75
0.82
V
SMALL SIGNAL CHARACTERISTICS
Current Gain -- Bandwidth Product
(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)
fT
100
--
--
MHz
Output Capacitance
(VCB = 10 V, f = 1.0 MHz)
Cob
--
--
4.5
pF
Noise Figure
(IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 k
,
f = 1.0 kHz, BW = 200 Hz)
NF
--
--
10
dB
BC856AWT1,BWT1 BC857AWT1,BWT1 BC858AWT1,BWT1,CWT1
3
Motorola SmallSignal Transistors, FETs and Diodes Device Data
BC857/BC858
Figure 1. Normalized DC Current Gain
IC, COLLECTOR CURRENT (mAdc)
2.0
Figure 2. "Saturation" and "On" Voltages
IC, COLLECTOR CURRENT (mAdc)
0.2
0.2
Figure 3. Collector Saturation Region
IB, BASE CURRENT (mA)
Figure 4. BaseEmitter Temperature Coefficient
IC, COLLECTOR CURRENT (mA)
0.6
0.7
0.8
0.9
1.0
0.5
0
0.2
0.4
0.1
0.3
1.6
1.2
2.0
2.8
2.4
1.2
1.6
2.0
0.02
1.0
10
0
20
0.1
0.4
0.8
h
FE
, NORMALIZED DC CURRENT
GAIN
V
, VOL
T
AGE (VOL
TS)
V
CE
, COLLECT
OREMITTER VOL
T
AGE (V)
VB
,
TEMPERA
TURE COEFFICIENT
(mV/
C)
1.5
1.0
0.7
0.5
0.3
0.2
10
100
1.0
TA = 25
C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE(on) @ VCE = 10 V
VCE = 10 V
TA = 25
C
55
C to +125
C
IC = 100 mA
IC = 20 mA
0.5 1.0
2.0
5.0 10
20
50
100 200
0.1 0.2
0.5
1.0
2.0
5.0
10
20
50
100
IC = 200 mA
IC = 50 mA
IC =
10 mA
Figure 5. Capacitances
VR, REVERSE VOLTAGE (VOLTS)
10
Figure 6. CurrentGain Bandwidth Product
IC, COLLECTOR CURRENT (mAdc)
0.4
1.0
80
100
200
300
400
60
20
40
30
7.0
5.0
3.0
2.0
0.5
C, CAP
ACIT
ANCE (pF)
f
, CURRENTGAIN BANDWIDTH PRODUCT
(MHz)
T
TA = 25
C
Cob
Cib
0.6
1.0
2.0
4.0 6.0
10
20 30 40
150
1.0
2.0 3.0
5.0
10
20
30
50
VCE = 10 V
TA = 25
C
TA = 25
C
1.0
BC856AWT1,BWT1 BC857AWT1,BWT1 BC858AWT1,BWT1,CWT1
4
Motorola SmallSignal Transistors, FETs and Diodes Device Data
BC856
Figure 7. DC Current Gain
IC, COLLECTOR CURRENT (AMP)
Figure 8. "On" Voltage
IC, COLLECTOR CURRENT (mA)
0.8
1.0
0.6
0.2
0.4
1.0
2.0
0.1
1.0
10
200
0.2
0.2
0.5
0.2
1.0
10
200
TJ = 25
C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE @ VCE = 5.0 V
Figure 9. Collector Saturation Region
IB, BASE CURRENT (mA)
Figure 10. BaseEmitter Temperature Coefficient
IC, COLLECTOR CURRENT (mA)
1.0
1.2
1.6
2.0
0.02
1.0
10
0
20
0.1
0.4
0.8
V
CE
, COLLECT
OREMITTER VOL
T
AGE (VOL
TS)
VB
,
TEMPERA
TURE COEFFICIENT
(mV/
C)
0.2
2.0
10
200
1.0
TJ = 25
C
IC =
10 mA
h
FE
, DC CURRENT
GAIN (NORMALIZED)
V
, VOL
T
AGE (VOL
TS)
VCE = 5.0 V
TA = 25
C
0
0.5
2.0
5.0
20
50
100
0.05
0.2
0.5
2.0
5.0
100 mA
20 mA
1.4
1.8
2.2
2.6
3.0
0.5
5.0
20
50
100
55
C to 125
C
VB for VBE
2.0 5.0
20
50 100
Figure 11. Capacitance
VR, REVERSE VOLTAGE (VOLTS)
40
Figure 12. CurrentGain Bandwidth Product
IC, COLLECTOR CURRENT (mA)
0.1 0.2
1.0
50
2.0
2.0
10
100
100
200
500
50
20
20
10
6.0
4.0
1.0
10
100
VCE = 5.0 V
C, CAP
ACIT
ANCE (pF)
f
, CURRENTGAIN BANDWIDTH PRODUCT T
0.5
5.0
20
TJ = 25
C
Cob
Cib
8.0
50 mA
200 mA
BC856AWT1,BWT1 BC857AWT1,BWT1 BC858AWT1,BWT1,CWT1
5
Motorola SmallSignal Transistors, FETs and Diodes Device Data
Figure 13. Thermal Response
t, TIME (ms)
1.0
r(t),
TRANSIENT
THERMAL
2.0
5.0
1.0
0.5
0.2
0.1
RESIST
ANCE (NORMALIZED)
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
20
50
10
200
500
100
1.0 k
2.0 k
5.0 k
10 k
Figure 14. Active Region Safe Operating Area
VCE, COLLECTOREMITTER VOLTAGE (V)
200
1.0
I C
, COLLECT
OR CURRENT
(mA)
TA = 25
C
D = 0.5
0.2
0.1
0.05
SINGLE PULSE
SINGLE PULSE
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
3 ms
TJ = 25
C
Z
JC(t) = r(t) R
JC
R
JC = 83.3
C/W MAX
Z
JA(t) = r(t) R
JA
R
JA = 200
C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) TC = P(pk) R
JC(t)
t1
t2
P(pk)
DUTY CYCLE, D = t1/t2
100
50
10
5.0
2.0
5.0
10
30 45 65
100
1 s
BC558
BC557
BC556
The safe operating area curves indicate ICVCE limits of the
transistor that must be observed for reliable operation. Collector load
lines for specific circuits must fall below the limits indicated by the
applicable curve.
The data of Figure 14 is based upon TJ(pk) = 150
C; TC or TA is
variable depending upon conditions. Pulse curves are valid for duty
cycles to 10% provided TJ(pk)
150
C. TJ(pk) may be calculated from
the data in Figure 13. At high case or ambient temperatures, thermal
limitations will reduce the power that can be handled to values less
than the limitations imposed by the secondary breakdown.
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