1
Motorola SmallSignal Transistors, FETs and Diodes Device Data
General Purpose Transistor
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector Emitter Voltage
VCEO
20
Vdc
Collector Base Voltage
VCBO
30
Vdc
Emitter Base Voltage
VEBO
5.0
Vdc
Collector Current -- Continuous
IC
100
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR 5 Board(1)
TA = 25
C
Derate above 25
C
PD
225
1.8
mW
mW/
C
Thermal Resistance, Junction to Ambient
R
q
JA
556
C/W
Total Device Dissipation
Alumina Substrate,(2) TA = 25
C
Derate above 25
C
PD
300
2.4
mW
mW/
C
Thermal Resistance, Junction to Ambient
R
q
JA
417
C/W
Junction and Storage Temperature
TJ, Tstg
55 to +150
C
DEVICE MARKING
BCW33LT1 = D3
ELECTRICAL CHARACTERISTICS
(TA = 25
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage
(IC = 2.0 mAdc, IB = 0)
V(BR)CEO
32
--
Vdc
Collector Base Breakdown Voltage
(IC = 10
m
Adc, IB = 0)
V(BR)CBO
32
--
Vdc
Emitter Base Breakdown Voltage
(IE = 10
m
Adc, IC = 0)
V(BR)EBO
5.0
--
Vdc
Collector Cutoff Current
(VCB = 32 Vdc, IE = 0)
(VCB = 32 Vdc, IE = 0, TA = 100
C)
ICBO
--
--
100
10
nAdc
Adc
1. FR 5 = 1.0
0.75
0.062 in.
2. Alumina = 0.4
0.3
0.024 in. 99.5% alumina.
Thermal Clad is a trademark of the Bergquist Company
Order this document
by BCW33LT1/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
BCW33LT1
1
2
3
CASE 318 08, STYLE 6
SOT 23 (TO 236AB)
Motorola, Inc. 1996
COLLECTOR
3
1
BASE
2
EMITTER
BCW33LT1
2
Motorola SmallSignal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25
C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 2.0 mAdc, VCE = 5.0 Vdc)
hFE
420
800
--
Collector Emitter Saturation Voltage
(IC = 10 mAdc, IB = 0.5 mAdc)
VCE(sat)
--
0.25
Vdc
Base Emitter On Voltage
(IC = 2.0 mAdc, VCE = 5.0 Vdc)
VBE(on)
0.55
0.70
Vdc
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cobo
--
4.0
pF
Noise Figure
(VCE = 5.0 Vdc, IC = 0.2 mAdc, RS = 2.0 k
, f = 1.0 kHz, BW = 200 Hz)
NF
--
10
dB
Figure 1. TurnOn Time
Figure 2. TurnOff Time
EQUIVALENT SWITCHING TIME TEST CIRCUITS
*Total shunt capacitance of test jig and connectors
10 k
+ 3.0 V
275
CS < 4.0 pF*
10 k
+ 3.0 V
275
CS < 4.0 pF*
1N916
300 ns
DUTY CYCLE = 2%
+10.9 V
0.5 V
<1.0 ns
10 < t1 < 500
s
DUTY CYCLE = 2%
+10.9 V
0
9.1 V
< 1.0 ns
t1
BCW33LT1
3
Motorola SmallSignal Transistors, FETs and Diodes Device Data
TYPICAL NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25
C)
Figure 3. Noise Voltage
f, FREQUENCY (Hz)
5.0
7.0
10
20
3.0
Figure 4. Noise Current
f, FREQUENCY (Hz)
2.0
10
20
50
100
200
500
1 k
2 k
5 k
10 k
100
50
20
10
5.0
2.0
1.0
0.5
0.2
0.1
BANDWIDTH = 1.0 Hz
RS = 0
IC = 1.0 mA
100
A
e
n
, NOISE VOL
T
AGE (nV)
I n
, NOISE CURRENT
(pA)
30
A
BANDWIDTH = 1.0 Hz
RS
10
A
300
A
IC = 1.0 mA
300
A
100
A
30
A
10
A
10
20
50
100
200
500
1 k
2 k
5 k
10 k
NOISE FIGURE CONTOURS
(VCE = 5.0 Vdc, TA = 25
C)
Figure 5. Narrow Band, 100 Hz
IC, COLLECTOR CURRENT (
A)
500 k
Figure 6. Narrow Band, 1.0 kHz
IC, COLLECTOR CURRENT (
A)
10
2.0 dB
BANDWIDTH = 1.0 Hz
R
S
, SOURCE RESIST
ANCE (OHMS)
R
S
, SOURCE RESIST
ANCE (OHMS)
Figure 7. Wideband
IC, COLLECTOR CURRENT (
A)
10
10 Hz to 15.7 kHz
R
S
, SOURCE RESIST
ANCE (OHMS)
Noise Figure is defined as:
NF
+
20 log10
en2
)
4KTRS
)
In
2RS2
4KTRS
1 2
= Noise Voltage of the Transistor referred to the input. (Figure 3)
= Noise Current of the Transistor referred to the input. (Figure 4)
= Boltzman's Constant (1.38 x 1023 j/
K)
= Temperature of the Source Resistance (
K)
= Source Resistance (Ohms)
en
In
K
T
RS
3.0 dB 4.0 dB
6.0 dB
10 dB
50
100
200
500
1 k
10 k
5 k
20 k
50 k
100 k
200 k
2 k
20
30
50 70 100
200 300
500 700
1 k
10
20
30
50 70 100
200 300
500 700
1 k
500 k
100
200
500
1 k
10 k
5 k
20 k
50 k
100 k
200 k
2 k
1 M
500 k
50
100
200
500
1 k
10 k
5 k
20 k
50 k
100 k
200 k
2 k
20
30
50
70
100
200 300
500 700
1 k
BANDWIDTH = 1.0 Hz
1.0 dB
2.0 dB
3.0 dB
5.0 dB
8.0 dB
1.0 dB
2.0 dB
3.0 dB
5.0 dB
8.0 dB
BCW33LT1
4
Motorola SmallSignal Transistors, FETs and Diodes Device Data
TYPICAL STATIC CHARACTERISTICS
Figure 8. Collector Saturation Region
IC, COLLECTOR CURRENT (mA)
1.4
Figure 9. Collector Characteristics
IC, COLLECTOR CURRENT (mA)
V
, VOL
T
AGE (VOL
TS)
1.0
2.0
5.0
10
20
50
1.6
100
TJ = 25
C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE(on) @ VCE = 1.0 V
*
q
VC for VCE(sat)
q
VB for VBE
0.1
0.2
0.5
Figure 10. "On" Voltages
IB, BASE CURRENT (mA)
0.4
0.6
0.8
1.0
0.2
0
V
CE
, COLLECT
OREMITTER VOL
T
AGE (VOL
TS)
0.002
BCW33LT1
TJ = 25
C
IC = 1.0 mA
10 mA
100 mA
Figure 11. Temperature Coefficients
50 mA
VCE, COLLECTOREMITTER VOLTAGE (VOLTS)
40
60
80
100
20
0
0
I C
, COLLECT
OR CURRENT
(mA)
TA = 25
C
PULSE WIDTH = 300
s
DUTY CYCLE
2.0%
IB = 500
A
400
A
300
A
200
A
100
A
*APPLIES for IC/IB
hFE/2
25
C to 125
C
55
C to 25
C
25
C to 125
C
55
C to 25
C
0.005 0.01 0.02 0.05 0.1 0.2
0.5
1.0 2.0
5.0 10
20
5.0
10
15
20
25
30
35
40
1.2
1.0
0.8
0.6
0.4
0.2
0
2.4
0.8
0
1.6
0.8
1.0
2.0
5.0
10
20
50
100
0.1
0.2
0.5
V
,
TEMPERA
TURE COEFFICIENTS (mV/
C)
BCW33LT1
5
Motorola SmallSignal Transistors, FETs and Diodes Device Data
TYPICAL DYNAMIC CHARACTERISTICS
C, CAP
ACIT
ANCE (pF)
Figure 12. TurnOn Time
IC, COLLECTOR CURRENT (mA)
300
Figure 13. TurnOff Time
IC, COLLECTOR CURRENT (mA)
2.0
5.0
10
20
30
50
1000
Figure 14. CurrentGain -- Bandwidth Product
IC, COLLECTOR CURRENT (mA)
Figure 15. Capacitance
VR, REVERSE VOLTAGE (VOLTS)
3.0
1.0
500
0.5
10
t,
TIME (ns)
t,
TIME (ns)
f
, CURRENTGAIN BANDWIDTH PRODUCT
(MHz)
T
3.0
5.0
7.0
10
20
30
50
70
100
200
7.0
70
100
VCC = 3.0 V
IC/IB = 10
TJ = 25
C
td @ VBE(off) = 0.5 Vdc
tr
10
20
30
50
70
100
200
300
500
700
2.0
5.0
10
20
30
50
3.0
1.0
7.0
70 100
VCC = 3.0 V
IC/IB = 10
IB1 = IB2
TJ = 25
C
ts
tf
50
70
100
200
300
0.7 1.0
2.0
3.0
5.0 7.0
10
20
30
50
TJ = 25
C
f = 100 MHz
VCE = 20 V
5.0 V
1.0
2.0
3.0
5.0
7.0
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
0.05
TJ = 25
C
f = 1.0 MHz
Cib
Cob
Figure 16. Thermal Response
t, TIME (ms)
1.0
0.01
r(t)
TRANSIENT
THERMAL
RESIST
ANCE
(NORMALIZED)
0.01
0.02
0.03
0.05
0.07
0.1
0.2
0.3
0.5
0.7
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
500
1.0 k 2.0 k
5.0 k 10 k
20 k
50 k 100 k
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
DUTY CYCLE, D = t1/t2
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1 (SEE AN569)
Z
JA(t) = r(t)
R
JA
TJ(pk) TA = P(pk) Z
JA(t)
t1
t2
P(pk)
FIGURE 19A
BCW33LT1
6
Motorola SmallSignal Transistors, FETs and Diodes Device Data
Figure 16A.
TJ, JUNCTION TEMPERATURE (
C)
104
4
0
I C
, COLLECT
OR CURRENT
(nA)
DESIGN NOTE: USE OF THERMAL RESPONSE DATA
A train of periodical power pulses can be represented by the model
as shown in Figure 16A. Using the model and the device thermal
response the normalized effective transient thermal resistance of
Figure 16 was calculated for various duty cycles.
To find Z
JA(t), multiply the value obtained from Figure 16 by the
steady state value R
JA.
Example:
The MPS3904 is dissipating 2.0 watts peak under the following
conditions:
t1 = 1.0 ms, t2 = 5.0 ms. (D = 0.2)
Using Figure 16 at a pulse width of 1.0 ms and D = 0.2, the reading of
r(t) is 0.22.
The peak rise in junction temperature is therefore
T = r(t) x P(pk) x R
JA = 0.22 x 2.0 x 200 = 88
C.
For more information, see AN569.
102
101
100
101
102
103
2
0
0
+ 20
+ 40
+ 60
+ 80 + 100 + 120 + 140 + 160
VCC = 30 Vdc
ICEO
ICBO
AND
ICEX @ VBE(off) = 3.0 Vdc
BCW33LT1
7
Motorola SmallSignal Transistors, FETs and Diodes Device Data
INFORMATION FOR USING THE SOT23 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor packages must
be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
SOT23
mm
inches
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
SOT23 POWER DISSIPATION
The power dissipation of the SOT23 is a function of the
pad size. This can vary from the minimum pad size for
soldering to a pad size given for maximum power dissipation.
Power dissipation for a surface mount device is determined
by TJ(max), the maximum rated junction temperature of the
die, R
JA, the thermal resistance from the device junction to
ambient, and the operating temperature, TA. Using the
values provided on the data sheet for the SOT23 package,
PD can be calculated as follows:
PD =
TJ(max) TA
R
JA
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values into
the equation for an ambient temperature TA of 25
C, one can
calculate the power dissipation of the device which in this
case is 225 milliwatts.
PD =
150
C 25
C
556
C/W
= 225 milliwatts
The 556
C/W for the SOT23 package assumes the use
of the recommended footprint on a glass epoxy printed circuit
board to achieve a power dissipation of 225 milliwatts. There
are other alternatives to achieving higher power dissipation
from the SOT23 package. Another alternative would be to
use a ceramic substrate or an aluminum core board such as
Thermal Clad
TM
. Using a board material such as Thermal
Clad, an aluminum core board, the power dissipation can be
doubled using the same footprint.
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within a
short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
Always preheat the device.
The delta temperature between the preheat and
soldering should be 100
C or less.*
When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering method,
the difference shall be a maximum of 10
C.
The soldering temperature and time shall not exceed
260
C for more than 10 seconds.
When shifting from preheating to soldering, the
maximum temperature gradient shall be 5
C or less.
After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and result
in latent failure due to mechanical stress.
Mechanical stress or shock should not be applied during
cooling.
* Soldering a device without preheating can cause excessive
thermal shock and stress which can result in damage to the
device.
BCW33LT1
8
Motorola SmallSignal Transistors, FETs and Diodes Device Data
PACKAGE DIMENSIONS
D
J
K
L
A
C
B S
H
G
V
3
1
2
CASE 31808
ISSUE AE
SOT23 (TO236AB)
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
DIM
A
MIN
MAX
MIN
MAX
MILLIMETERS
0.1102
0.1197
2.80
3.04
INCHES
B
0.0472
0.0551
1.20
1.40
C
0.0350
0.0440
0.89
1.11
D
0.0150
0.0200
0.37
0.50
G
0.0701
0.0807
1.78
2.04
H
0.0005
0.0040
0.013
0.100
J
0.0034
0.0070
0.085
0.177
K
0.0180
0.0236
0.45
0.60
L
0.0350
0.0401
0.89
1.02
S
0.0830
0.0984
2.10
2.50
V
0.0177
0.0236
0.45
0.60
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different
applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does
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against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
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BCW33LT1/D
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