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1
Motorola Bipolar Power Transistor Device Data
Complementary Silicon Plastic
Power Transistors
. . . designed for use in general purpose amplifier and switching applications.
Collector Emitter Saturation Voltage --
VCE(sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc
Collector Emitter Sustaining Voltage --
VCEO(sus) = 80 Vdc (Min) -- BD243B, BD244B
VCEO(sus)
= 100 Vdc (Min) -- BD243C, BD244C
High Current Gain Bandwidth Product
fT = 3.0 MHz (Min) @ IC = 500 mAdc
Compact TO220 AB Package
MAXIMUM RATINGS
Rating
Symbol
BD243B
BD244B
BD243C
BD244C
Unit
CollectorEmitter Voltage
VCEO
80
100
Vdc
CollectorBase Voltage
VCB
80
100
Vdc
EmitterBase Voltage
VEB
5.0
Vdc
Collector Current -- Continuous
Peak
IC
6
10
Adc
Base Current
IB
2.0
Adc
Total Device Dissipation
@ TC = 25
_
C
Derate above 25
_
C
PD
65
0.52
Watts
W/
_
C
Operating and Storage Junction
Temperature Range
TJ, Tstg
65 to + 150
_
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
JC
1.92
_
C/W
80
60
40
20
0
0
20
40
60
80
100
120
140
160
Figure 1. Power Derating
TC, CASE TEMPERATURE (
C)
P
D
, POWER DISSIP
A
TION (W
A
TTS)
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BD243B/D
Motorola, Inc. 1995
BD243B
BD243C
BD244B
BD244C
6 AMPERE
POWER TRANSISTORS
COMPLEMENTARY
SILICON
80 100 VOLTS
65 WATTS
*Motorola Preferred Device
CASE 221A06
TO220AB
NPN
PNP
*
*
REV 7
BD243B BD243C BD244B BD244C
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TC = 25
_
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
CollectorEmitter Sustaining Voltage (1)
(IC = 30 mAdc, IB = 0)
BD243B, BD244B
BD243C, BD244C
VCEO(sus)
80
100
--
--
Vdc
(IC = 30 mAdc, IB = 0)
BD243B, BD244B
BD243C, BD244C
80
100
--
--
Collector Cutoff Current
(VCE = 60 Vdc, IB = 0)
BD243B, BD243C, BD244B, BD244C
ICEO
--
0.7
mAdc
Collector Cutoff Current
(VCE = 80 Vdc, VEB = 0)
BD243B, BD244B
(VCE = 100 Vdc, VEB = 0)
BD243C, BD244C
ICES
--
--
400
400
Adc
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
IEBO
--
1.0
mAdc
ON CHARACTERISTICS (1)
DC Current Gain
(IC = 0.3 Adc, VCE = 4.0 Vdc)
(IC = 3.0 Adc, VCE = 4.0 Vdc)
hFE
30
15
--
--
--
CollectorEmitter Saturation Voltage
(IC = 6.0 Adc, IB = 1.0 Adc)
VCE(sat)
--
1.5
Vdc
BaseEmitter On Voltage
(IC = 6.0 Adc, VCE = 4.0 Vdc)
VBE(on)
--
2.0
Vdc
DYNAMIC CHARACTERISTICS
CurrentGain -- Bandwidth Product (2)
(IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz)
fT
3.0
--
MHz
SmallSignal Current Gain
(IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 kHz)
hfe
20
--
--
(1) Pulse Test: Pulsewidth
v
300
s, Duty Cycle
v
2.0%.
(2) fT = hfe
ftest
Figure 2. Switching Time Test Circuit
2.0
0.06
Figure 3. TurnOn Time
IC, COLLECTOR CURRENT (AMP)
t,
TIME (
s)
1.0
0.7
0.5
0.3
0.1
0.07
0.02
0.1
0.2
0.4
0.6
2.0
6.0
td @ VBE(off) = 5.0 V
TJ = 25
C
VCC = 30 V
IC/IB = 10
+ 11 V
0
VCC
30 V
SCOPE
RB
4 V
tr, tf
v
10 ns
DUTY CYCLE = 1.0%
RC
tr
0.03
0.05
1.0
4.0
D1 MUST BE FAST RECOVERY TYPE eg.
1N5825 USED ABOVE IB
[
100 mA
MSD6100 USED BELOW IB
[
100 mA
25
s
9.0 V
D1
51
RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
0.2
BD243B BD243C BD244B BD244C
3
Motorola Bipolar Power Transistor Device Data
Figure 4. Thermal Response
t, TIME OR PULSE WIDTH (ms)
1.0
0.01
0.01
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.02
r(t) EFFECTIVE
TRANSIENT
THERMAL
RESIST
ANCE (NORMALIZED)
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
1000
500
R
JC(max) = 1.92
C/W
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) TC = P(pk) R
JC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D = 0.5
SINGLE PULSE
0.2
0.05
0.1
0.02
0.01
SINGLE
PULSE
0.03
0.3
3.0
30
300
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMAL LIMITATION @ TC = 25
C
CURVES APPLY BELOW RATED VCEO
10
5.0
Figure 5. Active Region Safe Operating Area
5.0
1.0
0.1
10
20
60
100
TJ = 150
C
BD243B, BD244B
BD243C, BD244C
5.0 ms
0.5 ms
0.2
2.0
0.5
I C
, COLLECT
OR CURRENT
(AMP)
VCE, COLLECTOREMITTER VOLTAGE (VOLTS)
3.0
0.3
40
80
1.0
ms
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC VCE limits of
the transistor that must be observed for reliable operation,
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150
_
C: TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
v
150
_
C, TJ(pk) may be calculated from the data in Fig-
ure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
5.0
0.06
Figure 6. Turn-Off Time
IC, COLLECTOR CURRENT (AMP)
t,
TIME (
s)
2.0
1.0
0.5
0.3
0.2
0.1
0.07
0.05
0.1
0.2
0.4
0.6
2.0
6.0
TJ = 25
C
VCC = 30 V
IC/IB = 10
IB1 = IB2
ts
1.0
4.0
0.7
3.0
tf
300
0.5
Figure 7. Capacitance
VR, REVERSE VOLTAGE (VOLTS)
30
1.0
2.0
3.0
5.0
20
30
50
10
CAP
ACIT
ANCE (pF)
200
100
70
50
TJ = 25
C
Cib
Cob
BD243B BD243C BD244B BD244C
4
Motorola Bipolar Power Transistor Device Data
V
CE
, COLLECT
OREMITTER VOL
T
AGE (VOL
TS)
500
0.06
Figure 8. DC Current Gain
IC, COLLECTOR CURRENT (AMP)
5.0
0.1
0.2
0.3 0.4
0.6
1.0
2.0
6.0
100
50
30
10
2.0
0.06
Figure 9. Collector Saturation Region
IC, COLLECTOR CURRENT (AMPS)
0.2
0.3
0.6
2.0 3.0 4.0
6.0
0.8
0.4
0
TJ = 25
C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
V
, VOL
T
AGE (VOL
TS)
2.0
10
Figure 10. "On" Voltages
IB, BASE CURRENT (mA)
0
20
30
50
100
200 300
500
1000
1.6
1.2
0.8
0.4
IC = 1.0 A
TJ = 25
C
2.5 A
5.0 A
300
70
h
FE
, DC CURRENT
GAIN
TJ = 150
C
25
C
55
C
VCE = 2.0 V
+ 2.5
0.06
Figure 11. Temperature Coefficients
IC, COLLECTOR CURRENT (AMP)
0.2
0.3
0.5
1.0
3.0 0.4
0.6
V
,
TEMPERA
TURE COEFFICIENTS (mV/
C)
+ 2.0
+ 1.5
+ 0.5
0
0.5
1.0
1.5
2.0
2.5
VB FOR VBE
*
VC FOR VCE(sat)
*APPLIES FOR IC/IB
5.0
103
Figure 12. Collector Cut-Off Region
VBE, BASE-EMITTER VOLTAGE (VOLTS)
102
101
100
101
, COLLECT
OR CURRENT
(
A)
I C 10
2
10 3
0.3 0.2 0.1
0
+ 0.1 + 0.2 + 0.3
+ 0.4 + 0.5 + 0.6
VCE = 30 V
TJ = 150
C
100
C
REVERSE
FORWARD
IC = ICES
10M
Figure 13. Effects of BaseEmitter Resistance
TJ, JUNCTION TEMPERATURE (
C)
20
40
60
80
100
120
140
160
1.0M
100k
R
BE
, EXTERNAL
BASEEMITTER RESIST
ANCE (OHMS)
VCE = 30 V
IC = 10 x ICES
IC
ICES
(TYPICAL ICES VALUES
OBTAINED FROM FIGURE 12)
7.0
0.1
1.0
0.4
1.6
1.2
VBE @ VCE = 4.0 V
+ 1.0
2.0
0.1
IC = 2 x ICES
200
20
4.0
+ 25
C to + 150
C
55
C to + 25
C
+ 25
C to + 150
C
55
C to + 25
C
25
C
+ 0.7
10k
1.0k
0.1k
BD243B BD243C BD244B BD244C
5
Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS
CASE 221A06
TO220AB
ISSUE Y
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.570
0.620
14.48
15.75
B
0.380
0.405
9.66
10.28
C
0.160
0.190
4.07
4.82
D
0.025
0.035
0.64
0.88
F
0.142
0.147
3.61
3.73
G
0.095
0.105
2.42
2.66
H
0.110
0.155
2.80
3.93
J
0.018
0.025
0.46
0.64
K
0.500
0.562
12.70
14.27
L
0.045
0.060
1.15
1.52
N
0.190
0.210
4.83
5.33
Q
0.100
0.120
2.54
3.04
R
0.080
0.110
2.04
2.79
S
0.045
0.055
1.15
1.39
T
0.235
0.255
5.97
6.47
U
0.000
0.050
0.00
1.27
V
0.045
1.15
Z
0.080
2.04
B
Q
H
Z
L
V
G
N
A
K
F
1
2 3
4
D
SEATING
PLANE
T
C
S
T
U
R
J
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