1
Motorola Bipolar Power Transistor Device Data
Plastic Medium-Power
Silicon NPN Darlingtons
. . . for use as output devices in complementary generalpurpose amplifier applica-
tions.
High DC Current Gain --
hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc
Monolithic Construction
BD675, 675A, 677, 677A, 679, 679A, 681 are complementary with BD676, 676A,
678, 678A, 680, 680A, 682
BD 677, 677A, 679, 679A are equivalent to MJE 800, 801, 802, 803
MAXIMUM RATINGS
Rating
Symbol
BD675
BD675A
BD677
BD677A
BD679
BD679A
BD681
Unit
CollectorEmitter Voltage
VCEO
45
60
80
100
Vdc
CollectorBase Voltage
VCB
45
60
80
100
Vdc
EmitterBase Voltage
VEB
5.0
Vdc
Collector Current
IC
4.0
Adc
Base Current
IB
0.1
Adc
Total Device Dissipation
@TC = 25
_
C
Derate above 25
_
C
PD
40
0.32
Watts
W/
_
C
Operating and Storage Junction
Temperating Range
TJ, Tstg
55 to + 150
_
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
JC
3.13
_
C/W
50
40
10
5.0
0
15
30
45
60
75
105
135
150
165
Figure 1. Power Temperature Derating
TC, CASE TEMPERATURE (
C)
P
D
, POWER DISSIP
A
TION (W
A
TTS)
120
90
45
20
15
30
25
35
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BD675/D
Motorola, Inc. 1995
BD675
BD675A
BD677
BD677A
BD679
BD679A
BD681
4.0 AMPERE
DARLINGTON
POWER TRANSISTORS
NPN SILICON
60, 80, 100 VOLTS
40 WATTS
*Motorola Preferred Device
CASE 7708
TO225AA TYPE
*
REV 7
BD675 BD675A BD677 BD677A BD679 BD679A BD681
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TC = 25
_
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage(1)
BD675, 675A
(IC = 50 mAdc, IB = 0)
BD677, 677A
BD679, 679A
BD681
BVCEO
45
60
80
100
--
--
--
--
Vdc
Collector Cutoff Current (VCE = Half Rated VCEO, IB = 0)
ICEO
--
500
Adc
Collector Cutoff Current
(VCB = Rated BVCEO, IE = 0)
(VCB = Rated BVCEO, IE = 0, TC = 100'C)
ICBO
--
--
0.2
2.0
mAdc
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
IEBO
--
2.0
mAdc
ON CHARACTERISTICS
DC Currert Gain(1)
(IC = 1.5 Adc,VCE = 3.0 Vdc)
BD675, 677, 679, 681
(IC = 2.0 Adc, VCE = 3.0 Vdc)
BD675A, 677A, 679A
hFE
750
750
--
--
--
CollectorEmitter Saturation Voltage(1)
(IC = 1.5 Adc, IB = 30 mAdc)
BD677, 679, 681
(IC = 2.0 Adc, IB = 40 mAdc)
BD675A, 677A, 679A
VCE(sat)
--
--
2.5
2.8
Vdc
BaseEmitter On Voltage(1)
(IC = 1.5 Adc, VCE = 3.0 Vdc)
BD677, 679, 681
(IC = 2.0 Adc, VCE = 3 0 Vdc)
BD675A, 677A, 679A
VBE(on)
--
--
2.5
2.5
Vdc
DYNAMIC CHARACTERISTICS
Small Signal Current Gain (IC = 1.5 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)
hfe
1.0
--
--
(1) Pulse Test: Pulse Width
v
300
s, Duty Cycle
v
2.0%.
Figure 2. DC Safe Operating Area
5.0
1.0
VCE, COLLECTOREMITTER VOLTAGE (VOLTS)
2.0
1.0
0.5
0.05
2.0
5.0
10
50
100
BONDING WIRE LIMIT
THERMALLY LIMIT at TC = 25
C
SECONDARY BREAKDOWN LIMIT
0.2
0.1
I C
, COLLECT
OR CURRENT
(AMP)
TC = 25
C
BD675, 675A
BD677, 677A
BD679, 679A
BD681
20
There are two limitations on the power handling ability of a
transistor average junction temperature and secondary
breakdown. Safe operating area curves indicate IC VCE lim-
its of the transistor that must be observed for reliable opera-
tion; e.g., the transistor must not be subjected to greater
dissipation than the curves indicate.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the limita-
tions imposed by secondary breakdown.
Figure 3. Darlington Circuit Schematic
BASE
NPN
BD675, 675A
BD677, 677A
BD679, 679A
BD681
COLLECTOR
EMITTER
[
8.0 k
[
120
BD675 BD675A BD677 BD677A BD679 BD679A BD681
3
Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS
CASE 7708
TO225AA TYPE
ISSUE V
STYLE 1:
PIN 1.
EMITTER
2.
COLLECTOR
3.
BASE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
B
A
M
K
F
C
Q
H
V
G
S
D
J
R
U
1
3
2
2 PL
M
A
M
0.25 (0.010)
B
M
M
A
M
0.25 (0.010)
B
M
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.425
0.435
10.80
11.04
B
0.295
0.305
7.50
7.74
C
0.095
0.105
2.42
2.66
D
0.020
0.026
0.51
0.66
F
0.115
0.130
2.93
3.30
G
0.094 BSC
2.39 BSC
H
0.050
0.095
1.27
2.41
J
0.015
0.025
0.39
0.63
K
0.575
0.655
14.61
16.63
M
5 TYP
5 TYP
Q
0.148
0.158
3.76
4.01
R
0.045
0.055
1.15
1.39
S
0.025
0.035
0.64
0.88
U
0.145
0.155
3.69
3.93
V
0.040
1.02
_
_
BD675 BD675A BD677 BD677A BD679 BD679A BD681
4
Motorola Bipolar Power Transistor Device Data
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Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different
applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does
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BD675/D
*BD675/D*
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