1
Motorola SmallSignal Transistors, FETs and Diodes Device Data
One Watt Amplifier Transistors
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol
BDB01C
BDB01D
Unit
Collector Emitter Voltage
VCEO
80
100
Vdc
Collector Base Voltage
VCES
80
100
Vdc
Emitter Base Voltage
VEBO
5.0
Vdc
Collector Current -- Continuous
IC
0.5
Adc
Total Device Dissipation
@ TA = 25
C
Derate above 25
C
PD
1.0
8.0
Watt
mW/
C
Total Device Dissipation
@ TC = 25
C
Derate above 25
C
PD
2.5
20
Watt
mW/
C
Operating and Storage Junction
Temperature Range
TJ, Tstg
55 to +150
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
R
q
JA
125
C/W
Thermal Resistance, Junction to Case
R
q
JC
50
C/W
ELECTRICAL CHARACTERISTICS
(TA = 25
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector Emitter Voltage
(IC = 10 mA, IB = 0)
BDB01C
BDB01D
V(BR)CEO
80
100
--
--
Vdc
Collector Cutoff Current
(VCB = 80 V, IE = 0)
BDB01C
(VCB = 100 V, IE = 0)
BDB01D
ICBO
--
--
0.01
0.01
m
Adc
Emitter Cutoff Current
(IC = 0, VEB = 5.0 V)
IEBO
--
100
nAdc
Order this document
by BDB01C/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
BDB01C,D
CASE 2905, STYLE 1
TO92 (TO226AE)
1
2
3
Motorola, Inc. 1996
COLLECTOR
3
2
BASE
1
EMITTER
BDB01C,D
2
Motorola SmallSignal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25
C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 100 mA, VCE = 1.0 V)
(IC = 500 mA, VCE = 2.0 V)
hFE
40
25
400
--
--
Collector Emitter Saturation Voltage(1)
(IC = 1000 mA, IB = 100 mA)
VCE(sat)
--
0.7
Vdc
Collector Emitter On Voltage(1)
(IC = 1000 mA, VCE = 1.0 V)
VBE(on)
--
1.2
Vdc
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth Product
(IC = 200 mA, VCE = 5.0 V, f = 20 MHz)
fT
50
--
MHz
Output Capacitance
(VCB = 10 V, IE = 0, f = 1.0 MHz)
Cob
--
30
pF
1. Pulse Test: Pulse Width
v
300
m
s, Duty Cycle 2.0%.
Figure 1. DC Current Gain
IC, COLLECTOR CURRENT (mA)
400
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
100
200
200
100
80
60
40
h
FE
, DC CURRENT
GAIN
TJ = 125
C
25
C
55
C
VCE = 1.0 V
300
500
IB, BASE CURRENT (mA)
Figure 2. Collector Saturation Region
V
CE
, COLLECT
OREMITTER VOL
T
AGE (VOL
TS)
1.0
0.8
0.6
0.4
0.2
0
0.1
10
1.0
TJ = 25
C
IC = 10 mA
0.05
0.2
0.5
2.0
5.0
20
100 mA
250 mA
50
mA
50
500 mA
IC, COLLECTOR CURRENT (mA)
Figure 3. On Voltages
V
, VOL
T
AGE (VOL
TS)
1.0
0.8
0.6
0.4
0.2
0
0.5
1.0
200
20
TJ = 25
C
VBE(on) @ VCE = 1.0 V
VCE(sat) @ IC/IB = 10
5.0
10
50
100
VBE(sat) @ IC/IB = 10
2.0
500
BDB01C,D
3
Motorola SmallSignal Transistors, FETs and Diodes Device Data
BDB01A
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN
LIMIT
100
s
1.0 ms
1.0 s
TC = 25
C
TA = 25
C
dc
dc
DUTY CYCLE
10%
BDB01B
BDB01C
BDB01D
IC, COLLECTOR CURRENT (mA)
Figure 4. BaseEmitter Temperature Coefficient
0.8
2.8
1.0
100
10
VB for VBE
0.5
2.0
5.0
20
50
200
1.2
1.6
2.0
2.4
VB
,
TEMPERA
TURE COEFFICIENT
(mV/
C)
500
C, CAP
ACIT
ANCE (pF)
Figure 5. Capacitance
VR, REVERSE VOLTAGE (VOLTS)
100
50
20
10
5.0
2.0
1.0
0.5
0.2
0.1
80
60
40
20
10
4.0
TJ = 25
C
Cobo
Cibo
8.0
6.0
Figure 6. CurrentGain -- Bandwidth Product
IC, COLLECTOR CURRENT (mA)
200
70
50
30
20
10
7.0
5.0
3.0
2.0
300
200
100
70
50
30
VCE = 2.0 V
TJ = 25
C
f
, CURRENTGAIN -- BANDWIDTH PRODUCT
(MHz)
T
100
VCE, COLLECTOREMITTER VOLTAGE (VOLTS)
2 k
1.0
I C
, COLLECT
OR CURRENT
(mA)
2.0
5.0
Figure 7. Active RegionSafe Operating Area
500
200
100
50
20
10
10
20
60 80 100
1 k
45
BDB01C,D
4
Motorola SmallSignal Transistors, FETs and Diodes Device Data
PACKAGE DIMENSIONS
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
CASE 02905
(TO226AE)
ISSUE AD
R
A
P
L
F
B
K
G
H
C
V
N
N
X X
SEATING
PLANE
1
J
SECTION XX
D
2 3
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSIONS D AND J APPLY BETWEEN L AND K
MIMIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.175
0.205
4.44
5.21
B
0.290
0.310
7.37
7.87
C
0.125
0.165
3.18
4.19
D
0.018
0.022
0.46
0.56
F
0.016
0.019
0.41
0.48
G
0.045
0.055
1.15
1.39
H
0.095
0.105
2.42
2.66
J
0.018
0.024
0.46
0.61
K
0.500
12.70
L
0.250
6.35
N
0.080
0.105
2.04
2.66
P
0.100
2.54
R
0.135
3.43
V
0.135
3.43
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BDB01C/D
*BDB01C/D*
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