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1
Motorola Bipolar Power Transistor Device Data
Darlington Complementary
Silicon Power Transistors
. . . designed for general purpose and low speed switching applications.
High DC Current Gain -- hFE = 2500 (typ.) at IC = 4.0
CollectorEmitter Sustaining Voltage at 100 mAdc
VCEO(sus) = 80 Vdc (min.) -- BDX33B, 34B
VCEO(sus) =
100 Vdc (min.) -- BDX33C, 34C
Low CollectorEmitter Saturation Voltage
VCE(sat) = 2.5 Vdc (max.) at IC = 3.0 Adc -- BDX33B, 33C/34B, 34C
Monolithic Construction with BuildIn BaseEmitter Shunt resistors
TO220AB Compact Package
MAXIMUM RATINGS
Rating
Symbol
BDX33B
BDX34B
BDX33C
BDX34C
Unit
CollectorEmitter Voltage
VCEO
80
100
Vdc
CollectorBase Voltage
VCB
80
100
Vdc
EmitterBase Voltage
VEB
5.0
Vdc
Collector Current -- Continuous
Peak
IC
10
15
Adc
Base Current
IB
0.25
Adc
Total Device Dissipation
@ TC = 25
_
C
Derate above 25
_
C
PD
70
0.56
Watts
W/
_
C
Operating and Storage Junction
Temperature Range
TJ, Tstg
65 to + 150
_
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
JC
1.78
_
C/W
80
60
40
20
0
0
20
40
60
80
100
120
140
160
Figure 1. Power Derating
TC, CASE TEMPERATURE (
C)
P
D
, POWER DISSIP
A
TION (W
A
TTS)
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BDX33B/D
Motorola, Inc. 1995
BDX33B
BDX33C
BDX34B
BDX34C
DARLINGTON
10 AMPERE
COMPLEMENTARY
SILICON
POWER TRANSISTORS
80 100 VOLTS
70 WATTS
*Motorola Preferred Device
CASE 221A06
TO220AB
*
*
NPN
PNP
REV 7
BDX33B BDX33C BDX34B BDX34C
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TC = 25
_
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage1
(IC = 100 mAdc, IB = 0)
BDX33B/BDX34B
BDX33C/BDX34C
VCEO(sus)
80
100
--
--
Vdc
CollectorEmitter Sustaining Voltage1
(IC = 100 mAdc, IB = 0, RBE = 100)
BDX33B/BDX34B
BDX33C/BDX33C
VCER(sus)
80
100
--
--
Vdc
CollectorEmitter Sustaining Voltage1
(IC = 100 mAdc, IB = 0, VBE = 1.5 Vdc)
BDX33B/BDX34B
BDX33C/BDX34C
VCEX(sus)
80
100
--
--
Vdc
Collector Cutoff Current
(VCE = 1/2 rated VCEO, IB = 0)
TC = 25
_
C
TC = 100
_
C
ICEO
--
--
0.5
10
mAdc
Collector Cutoff Current
(VCB = rated VCBO, IE = 0)
TC = 25
_
C
TC = 100
_
C
ICBO
--
--
1.0
5.0
mAdc
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
IEBO
--
10
mAdc
ON CHARACTERISTICS
DC Current Gain1
(IC = 3.0 Adc, VCE = 3.0 Vdc)
BDX33B, 33C/34B, 34C
hFE
750
--
--
CollectorEmitter Saturation Voltage
(IC = 3.0 Adc, IB = 6.0 mAdc)
BDX33B, 33C/34B, 34C
VCE(sat)
--
2.5
Vdc
BaseEmitter On Voltage
(IC = 3.0 Adc, VCE = 3.0 Vdc)
BDX33B, 33C/34B, 34C
VBE(on)
--
2.5
Vdc
Diode Forward Voltage
(IC = 8.0 Adc)
VF
--
4.0
Vdc
1 Pulse Test: Pulse Width
v
300
s, Duty Cycle
v
2.0%.
2 Pulse Test non repetitive: Pulse Width = 0.25 s.
BDX33B BDX33C BDX34B BDX34C
3
Motorola Bipolar Power Transistor Device Data
Figure 1. Thermal Response
t, TIME OR PULSE WIDTH (ms)
1.0
0.01
0.01
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.02
r(t) EFFECTIVE
TRANSIENT
THERMAL
RESIST
ANCE (NORMALIZED)
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
1000
500
R
JC(t) = r(t) R
JC
R
JC = 1.92
C/W
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) TC = P(pk) R
JC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D = 0.5
SINGLE PULSE
0.2
0.05
0.1
0.02
0.01
SINGLE
PULSE
0.03
0.3
3.0
30
300
20
1.0
10
5.0
2.0
1.0
0.5
0.02
3.0
5.0
7.0
10
20
30
50
100
70
0.2
dc
5.0 ms
1.0 ms
BDX33B
BDX33C
500
s
100
s
TC = 25
C
CURVES APPLY BELOW RATED VCEO
0.05
0.1
2.0
20
1.0
Figure 2. ActiveRegion Safe Operating Area
VCE, COLLECTOREMITTER VOLTAGE (VOLTS)
10
5.0
2.0
1.0
0.5
0.02
3.0
5.0
7.0
10
20
30
50
100
70
0.2
I C
, COLLECT
OR CURRENT
(AMP)
dc
5.0 ms
1.0 ms
BDX34B
BDX34C
500
s
100
s
TC = 25
C
BONDING WIRE LIMITED
THERMALLY LIMITED @ TC = 25
C
(SINGLE PULSE)
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW RATED VCEO
0.05
0.1
2.0
VCE, COLLECTOREMITTER VOLTAGE (VOLTS)
I C
, COLLECT
OR CURRENT
(AMP)
BONDING WIRE LIMITED
THERMALLY LIMITED @ TC = 25
C
(SINGLE PULSE)
SECOND BREAKDOWN LIMITED
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC VCE limits of
the transistor that must be observed for reliable operation,
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate. The data of Fig. 3 is based on
TJ(pk) = 150
_
C; TC is variable depending on conditions. Se-
cond breakdown pulse limits are valid for duty cycles to 10%
provided TJ(pk) = 150
_
C. TJ(pk) may be calculated from the
data in Fig. . At high case temperatures, thermal limitations
will reduce the power that can be handled to values less than
the limitations imposed by second breakdown.
10,000
1.0
Figure 3. SmallSignal Current Gain
f, FREQUENCY (kHz)
10
2.0
5.0
10
20
50
100
200
1000
500
300
100
5000
h
FE
, SMALLSIGNAL
CURRENT
GAIN
20
3000
200
500
2000
1000
30
50
300
0.1
Figure 4. Capacitance
VR, REVERSE VOLTAGE (VOLTS)
30
1.0
2.0
5.0
20
100
10
C, CAP
ACIT
ANCE (pF)
200
100
70
50
TJ = 25
C
Cib
Cob
50
0.2
0.5
TJ = 25
C
VCE = 4.0 Vdc
IC = 3.0 Adc
PNP
NPN
PNP
NPN
BDX33B BDX33C BDX34B BDX34C
4
Motorola Bipolar Power Transistor Device Data
0.1
Figure 5. DC Current Gain
IC, COLLECTOR CURRENT (AMP)
0.2
0.3
0.5 0.7
1.0
2.0
10
500
300
h
FE
, DC CURRENT
GAIN
TJ = 150
C
25
C
55
C
VCE = 4.0 V
200
7.0
NPN
BDX33B, 33C
PNP
BDX34B, 34C
20,000
5000
10,000
3000
2000
1000
3.0
5.0
0.1
IC, COLLECTOR CURRENT (AMP)
0.2 0.3
0.5 0.7
1.0
2.0
10
500
300
h
FE
, DC CURRENT
GAIN
TJ = 150
C
25
C
55
C
200
7.0
20,000
5000
10,000
3000
2000
1000
3.0
5.0
VCE = 4.0 V
V
CE
, COLLECT
OREMITTER VOL
T
AGE (VOL
TS)
V
CE
, COLLECT
OREMITTER VOL
T
AGE (VOL
TS)
Figure 6. Collector Saturation Region
3.0
IB, BASE CURRENT (mA)
0.3
0.5
1.0
2.0
3.0
5.0 7.0
30
2.6
2.2
1.8
1.4
IC = 2.0 A
TJ = 25
C
4.0 A
6.0 A
1.0
0.7
20
10
3.0
IB, BASE CURRENT (mA)
0.3
0.5
1.0
2.0
3.0
5.0 7.0
30
2.6
2.2
1.8
1.4
IC = 2.0 A
TJ = 25
C
4.0 A
6.0 A
1.0
0.7
20
10
IC, COLLECTOR CURRENT (AMP)
VBE(sat) @ IC/IB = 250
V
, VOL
T
AGE (VOL
TS)
Figure 7. "On" Voltages
IC, COLLECTOR CURRENT (AMP)
V
, VOL
T
AGE (VOL
TS)
VBE(sat) @ IC/IB = 250
VCE(sat) @ IC/IB = 250
TJ = 25
C
VBE @ VCE = 4.0 V
VBE @ VCE = 4.0 V
VCE(sat) @ IC/IB = 250
TJ = 25
C
0.1
0.2 0.3
0.5 0.7
1.0
2.0
10
7.0
3.0
5.0
0.1
0.2 0.3
0.5 0.7
1.0
2.0
10
7.0
3.0
5.0
3.0
2.5
2.0
1.5
1.0
0.5
3.0
2.5
2.0
1.5
1.0
0.5
BDX33B BDX33C BDX34B BDX34C
5
Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS
CASE 221A06
TO220AB
ISSUE Y
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.570
0.620
14.48
15.75
B
0.380
0.405
9.66
10.28
C
0.160
0.190
4.07
4.82
D
0.025
0.035
0.64
0.88
F
0.142
0.147
3.61
3.73
G
0.095
0.105
2.42
2.66
H
0.110
0.155
2.80
3.93
J
0.018
0.025
0.46
0.64
K
0.500
0.562
12.70
14.27
L
0.045
0.060
1.15
1.52
N
0.190
0.210
4.83
5.33
Q
0.100
0.120
2.54
3.04
R
0.080
0.110
2.04
2.79
S
0.045
0.055
1.15
1.39
T
0.235
0.255
5.97
6.47
U
0.000
0.050
0.00
1.27
V
0.045
1.15
Z
0.080
2.04
B
Q
H
Z
L
V
G
N
A
K
F
1
2 3
4
D
SEATING
PLANE
T
C
S
T
U
R
J
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