1
Motorola SmallSignal Transistors, FETs and Diodes Device Data
AM/FM Transistor
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector Emitter Voltage
VCEO
40
Vdc
Collector Base Voltage
VCBO
40
Vdc
Emitter Base Voltage
VEBO
4.0
Vdc
Collector Current -- Continuous
IC
25
mAdc
Total Device Dissipation @ TA = 25
C
Derate above 25
C
PD
350
2.8
mW
mW/
C
Total Device Dissipation @ TC = 25
C
Derate above 25
C
PD
1.0
8.0
Watt
mW/
C
Operating and Storage Junction
Temperature Range
TJ, Tstg
55 to +150
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
R
q
JA
357
C/W
Thermal Resistance, Junction to Case
R
q
JC
125
C/W
ELECTRICAL CHARACTERISTICS
(TA = 25
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
40
--
--
Vdc
CollectorBase Breakdown Voltage (IC = 100
Adc, IE = 0)
V(BR)CBO
40
--
--
Vdc
EmitterBase Breakdown Voltage (IE = 10
Adc, IC = 0)
V(BR)EBO
4.0
--
--
Vdc
Collector Cutoff Current (VCB = 20 Vdc, IE = 0)
ICBO
--
--
100
nAdc
ON CHARACTERISTICS
DC Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc)
hFE
65
--
220
--
BaseEmitter On Voltage (IC = 1.0 mAdc, VCE = 10 Vdc)
VBE(on)
0.65
0.7
0.74
Vdc
SMALLSIGNAL CHARACTERISTICS
CurrentGain -- Bandwidth Product
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 100 MHz)
fT
--
600
--
MHz
Common Emitter Feedback Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cre
--
0.28
0.34
pF
1. Pulse Test: Pulse Width
v
300
m
s, Duty Cycle
v
2.0%.
Order this document
by BF240/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
BF240
CASE 2904, STYLE 21
TO92 (TO226AA)
1
2
3
Motorola, Inc. 1996
COLLECTOR
1
3
BASE
2
EMITTER
REV 1
BF240
2
Motorola SmallSignal Transistors, FETs and Diodes Device Data
VCE = 10 V
TA = 25
C
f
, CURRENTGAIN -- BANDWIDTH PRODUCT
(MHz)
T
C, CAP
ACIT
ANCE (pF)
BF240
1000
10
20
100
200
300
500
700
100
0.2 0.3 0.5 0.7 1
3
5
10
20
IC, COLLECTOR CURRENT (mA)
Figure 1. CurrentGain -- Bandwidth Product
10
0.2
0.1
VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Capacitances
0.3
0.4
0.5
0.7
1
2
0.2
0.5
1
3
5
10
20
Cre @ IE = 0
Cob
Cib
200
0.1
IC, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
0.2 0.3 0.5 0.7 1
2
3
5 7 10
20
100
10
20
30
50
70
h
FE
, DC CURRENT
GAIN
100
1
2
5
10
20
50
2
3
4
5
6
7
8
IC, COLLECTOR CURRENT (mA)
Figure 4. b11e
VCE = 10 V
TA = 25
C
BF240
mmhos
VCE = 10 V
100 MHz
45 MHz
10.7 MHz
b11e 470 kHz < 0.2 mmhos
mmhos
100
1
2
5
10
20
50
2
3
4
5
6
7
8
IC, COLLECTOR CURRENT (mA)
Figure 5. b21e
VCE = 10 V
100 MHz
45 MHz
10.7 MHz
b21e, at 470 kHz < 0.5 mmhos
mhos
2000
1
2
3
4
5
6
7
IC, COLLECTOR CURRENT (mA)
Figure 6. b22e (boe)
20
50
100
200
500
1000
VCE = 10 V
100 MHz
45 MHz
10.7 MHz
470 kHz
BF240
3
Motorola SmallSignal Transistors, FETs and Diodes Device Data
10
0.1
0.2
0.5
1
2
5
2
3
4
5
6
7
8
IC, COLLECTOR CURRENT (mA)
Figure 7. g11e (gie)
mmhos
VCE = 10 V
100 MHz
45 MHz
10.7 MHz
mmhos
200
2
5
10
20
50
1
2
3
4
5
6
7
IC, COLLECTOR CURRENT (mA)
Figure 8. g21e (Yfe)
VCE = 10 V
f = 0.47 to 45 MHz
mhos
200
1
2
3
4
5
6
7
IC, COLLECTOR CURRENT (mA)
Figure 9. g22e (goe)
2
5
10
20
50
100
VCE = 10 V
100 MHz
45 MHz
10.7 MHz
470 kHz
100
470 kHz
BF240
4
Motorola SmallSignal Transistors, FETs and Diodes Device Data
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
F
B
K
G
H
SECTION XX
C
V
D
N
N
X X
SEATING
PLANE
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.175
0.205
4.45
5.20
B
0.170
0.210
4.32
5.33
C
0.125
0.165
3.18
4.19
D
0.016
0.022
0.41
0.55
F
0.016
0.019
0.41
0.48
G
0.045
0.055
1.15
1.39
H
0.095
0.105
2.42
2.66
J
0.015
0.020
0.39
0.50
K
0.500
12.70
L
0.250
6.35
N
0.080
0.105
2.04
2.66
P
0.100
2.54
R
0.115
2.93
V
0.135
3.43
1
CASE 02904
(TO226AA)
ISSUE AD
STYLE 21:
PIN 1. COLLECTOR
2. EMITTER
3. BASE
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BF240/D
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