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1
Motorola SmallSignal Transistors, FETs and Diodes Device Data
High Voltage Transistors
PNP Silicon
MAXIMUM RATINGS
Rating
Symbol
BF421
BF423
Unit
Collector Emitter Voltage
VCEO
300
250
Vdc
Collector Base Voltage
VCBO
300
250
Vdc
Emitter Base Voltage
VEBO
5.0
Vdc
Collector Current -- Continuous
IC
500
mAdc
Total Device Dissipation
@ TA = 25
C
Derate above 25
C
PD
625
5.0
mW
mW/
C
Total Device Dissipation
@ TC = 25
C
Derate above 25
C
PD
1.5
12
Watts
mW/
C
Operating and Storage Junction
Temperature Range
TJ, Tstg
55 to +150
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
R
q
JA
200
C/W
Thermal Resistance, Junction to Case
R
q
JC
83.3
C/W
ELECTRICAL CHARACTERISTICS
(TA = 25
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (1)
(IC = 1.0 mAdc, IB = 0)
BF421
BF423
V(BR)CEO
300
250
--
--
Vdc
Collector Base Breakdown Voltage
(IC = 100
m
Adc, IE = 0)
BF421
BF423
V(BR)CBO
300
250
--
--
Vdc
Emitter Base Breakdown Voltage
(IE = 100
m
Adc, IC = 0)
BF421
BF423
V(BR)EBO
5.0
5.0
--
--
Vdc
Collector Cutoff Current
(VCB = 200 Vdc, IE = 0)
BF421
BF423
ICBO
--
--
0.01
--
m
Adc
Emitter Cutoff Current
(VEB = 5.0 Vdc, IC = 0)
BF421
BF423
IEBO
--
--
100
--
nAdc
1. Pulse Test: Pulse Width
v
300
m
s; Duty Cycle
v
2.0%.
Order this document
by BF421/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
BF421
BF423
CASE 2904, STYLE 14
TO92 (TO226AA)
1
2
3
Motorola, Inc. 1996
COLLECTOR
2
3
BASE
1
EMITTER
BF421 BF423
2
Motorola SmallSignal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25
C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 25 mA, VCE = 20 Vdc)
BF421
BF423
hFE
50
50
--
--
--
Collector Emitter Saturation Voltage
(IC = 20 mAdc, IB = 2.0 mAdc)
VCE(sat)
--
0.5
Vdc
Base Emitter Saturation Voltage
(IC = 20 mA, IB = 2.0 mA)
VBE(sat)
--
2.0
Vdc
SMALL SIGNAL CHARACTERISTICS
Current Gain -- Bandwidth Product
(IC = 10 mAdc, VCE = 10 Vdc, f = 20 MHz)
fT
60
--
MHz
Common Emitter Feedback Capacitance
(VCB = 30 Vdc, IE = 0, f = 1.0 MHz)
Cre
--
2.8
pF
BF421 BF423
3
Motorola SmallSignal Transistors, FETs and Diodes Device Data
Figure 1. DC Current Gain
IC, COLLECTOR CURRENT (mA)
150
1.0
15
h
FE
, DC CURRENT
GAIN
TJ = +125
C
+25
C
55
C
VCE = 10 Vdc
20
30
50
70
100
2.0
3.0
5.0
7.0
10
20
30
50
80
100
C, CAP
ACIT
ANCE (pF)
Figure 2. Capacitances
VR, REVERSE VOLTAGE (VOLTS)
0.1
100
50
20
1.0
Ccb
10
2.0
5.0
Cib
Figure 3. CurrentGain -- Bandwidth Product
IC, COLLECTOR CURRENT (mA)
50
20
10
5.0
2.0
100
60
40
30
20
0
TJ = 25
C
VCE = 20 Vdc
f
, CURRENTGAIN -- BANDWIDTH PRODUCT
(MHz)
T
1.0
IC, COLLECTOR CURRENT (mA)
Figure 4. "On" Voltages
V
, VOL
T
AGE (VOL
TS)
1.0
0
VCE(sat) @ IC/IB = 10 mA
VBE @ VCE = 10 V
0.8
0.6
0.4
0.2
VCE, COLLECTOREMITTER VOLTAGE (VOLTS)
I C
, COLLECT
OR CURRENT
(mA)
BF423
Figure 5. Active Region -- Safe Operating Area
BONDING WIRE LIMITATION
SECOND BREAKDOWN
LIMITATION
BF421
100
s
1.0 ms
TJ = 150
C
1.5 WATT THERMAL
LIMITATION @ TC = 25
C
625 mW THERMAL
LIMITATION @ TA = 25
C
500
5.0
10
20
50
100
200
0.2 0.5 1.0 2.0 5.0 10 20
50 100 200 500 1000
80
100
50
20
10
5.0
2.0
1.0
100
3.0
5.0
10
20 30
50
100
200 300
1.0 s
BF421 BF423
4
Motorola SmallSignal Transistors, FETs and Diodes Device Data
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
F
B
K
G
H
SECTION XX
C
V
D
N
N
X X
SEATING
PLANE
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.175
0.205
4.45
5.20
B
0.170
0.210
4.32
5.33
C
0.125
0.165
3.18
4.19
D
0.016
0.022
0.41
0.55
F
0.016
0.019
0.41
0.48
G
0.045
0.055
1.15
1.39
H
0.095
0.105
2.42
2.66
J
0.015
0.020
0.39
0.50
K
0.500
12.70
L
0.250
6.35
N
0.080
0.105
2.04
2.66
P
0.100
2.54
R
0.115
2.93
V
0.135
3.43
1
CASE 02904
(TO226AA)
ISSUE AD
STYLE 14:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
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BF421/D
*BF421/D*
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