1
Motorola SmallSignal Transistors, FETs and Diodes Device Data
VHF Transistor
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector Emitter Voltage
VCEO
20
Vdc
Collector Base Voltage
VCBO
30
Vdc
Emitter Base Voltage
VEBO
3.0
Vdc
Collector Current -- Continuous
IC
100
mAdc
Total Device Dissipation @ TA = 25
C
Derate above 25
C
PD
625
5.0
mW
mW/
C
Total Device Dissipation @ TC = 25
C
Derate above 25
C
PD
1.5
12
Watt
mW/
C
Operating and Storage Junction
Temperature Range
TJ, Tstg
55 to +150
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
R
q
JA
200
C/W
Thermal Resistance, Junction to Case
R
q
JC
83.3
C/W
ELECTRICAL CHARACTERISTICS
(TA = 25
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0)
V(BR)CEO
20
--
--
Vdc
Collector Base Breakdown Voltage (IC = 10
m
Adc, IE = 0)
V(BR)CBO
30
--
--
Vdc
Emitter Base Breakdown Voltage (IE = 10
m
Adc, IC = 0)
V(BR)EBO
3.0
--
--
Vdc
Collector Cutoff Current (VCB = 20 Vdc, IE = 0)
ICBO
--
--
100
nAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 5.0 mAdc, VCE = 10 Vdc)
(IC = 20 mAdc, VCE = 10 Vdc)
hFE
35
40
--
--
--
--
--
Collector Emitter Saturation Voltage (IC = 30 mAdc, IB = 2.0 mAdc)
VCE(sat)
--
--
1.0
Vdc
Base Emitter Saturation Voltage (IC = 30 mAdc, IB = 2.0 mAdc)
VBE(sat)
--
--
1.0
Vdc
SMALL SIGNAL CHARACTERISTICS
Current Gain -- Bandwidth Product
(IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz)
(IC = 30 mAdc, VCE = 10 Vdc, f = 100 MHz)
fT
700
600
--
--
--
--
MHz
Common Emitter Feedback Capacitance
(VCB = 10 Vdc, Pf = 0, f = 10 MHz)
Cre
--
0.65
--
pF
Noise Figure (IC = 4.0 mA, VCE = 10 V, RS = 50
, f = 200 MHz)
Nf
--
3.0
--
dB
Order this document
by BF959/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
BF959
CASE 2904, STYLE 21
TO92 (TO226AA)
1
2
3
Motorola, Inc. 1996
COLLECTOR
1
3
BASE
2
EMITTER
BF959
2
Motorola SmallSignal Transistors, FETs and Diodes Device Data
Figure 1. hFE at 10 V
IC, COLLECTOR CURRENT (mA)
30
50
200
500
1000
10
1
Figure 2. VCE(sat) at IC/IB = 10
IC, COLLECTOR CURRENT (mA)
10
20
30
50
2
3
4 5
h
FE
, DC CURRENT
GAIN
100
40
20
100
30
50
200
500
10
1
10
20
30
50
2
3
4
5
100
40
20
Figure 3. CurrentGain -- Bandwidth Product
IC, COLLECTOR CURRENT (mA)
0.8
1.2
1.6
1.8
2.0
0.4
1
Figure 4. Capacitances
VR, REVERSE VOLTAGE (VOLTS)
10
20
30
50
2
3
4 5
1.4
1
0.6
100
1
10
20
30
50
2
3
4 5
100
f
, CURRENTGAIN -- BANDWIDTH PRODUCT
(GHz)
T
C, CAP
ACIT
ANCE (pF)
0.8
1.2
1.6
1.8
0.4
1.4
1
0.6
0.2
Figure 5. Input Impedance at 30 MHz
IC, COLLECTOR CURRENT (mA)
0.3
0.5
2
5
10
0.1
1
Figure 6. Output Impedance at 30 MHz
IC, COLLECTOR CURRENT (mA)
10
20
30
50
2
3
4 5
1
0.4
0.2
100
1
10
20
30
50
2
3
4
5
Y1
1e (ms)
40
100
300
500
20
200
50
30
10
Y22e (
s)
3
4
mV
5 V
10 V
2 V
Cob
Cib
Cre
VCE = 10 V
g11e
b11e
VCE = 10 V
b22e
g22e
40
BF959
3
Motorola SmallSignal Transistors, FETs and Diodes Device Data
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
F
B
K
G
H
SECTION XX
C
V
D
N
N
X X
SEATING
PLANE
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.175
0.205
4.45
5.20
B
0.170
0.210
4.32
5.33
C
0.125
0.165
3.18
4.19
D
0.016
0.022
0.41
0.55
F
0.016
0.019
0.41
0.48
G
0.045
0.055
1.15
1.39
H
0.095
0.105
2.42
2.66
J
0.015
0.020
0.39
0.50
K
0.500
12.70
L
0.250
6.35
N
0.080
0.105
2.04
2.66
P
0.100
2.54
R
0.115
2.93
V
0.135
3.43
1
CASE 02904
(TO226AA)
ISSUE AD
STYLE 21:
PIN 1. COLLECTOR
2. EMITTER
3. BASE
BF959
4
Motorola SmallSignal Transistors, FETs and Diodes Device Data
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