1
Motorola SmallSignal Transistors, FETs and Diodes Device Data
JFET Amplifiers
NChannel
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain Source Voltage
VDS
25
Vdc
Gate Source Voltage
VGS
25
Vdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation(1)
TA = 25
C
Derate above 25
C
PD
225
1.8
mW
mW/
C
Thermal Resistance Junction to Ambient
R
q
JA
556
C/W
Total Device Dissipation
Alumina Substrate,(2) TA = 25
C
Derate above 25
C
PD
300
2.4
mW
mW/
C
Thermal Resistance Junction to Ambient
R
q
JA
417
C/W
Junction and Storage Temperature
TJ, Tstg
55 to +150
C
DEVICE MARKING
BFR30LT1 = M1; BFR31LT1 = M2
ELECTRICAL CHARACTERISTICS
(TA = 25
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Gate Reverse Current
(VGS = 10 Vdc, VDS = 0)
IGSS
--
0.2
nAdc
Gate Source Cutoff Voltage
(ID = 0.5 nAdc, VDS = 10 Vdc)
BFR30
BFR31
VGS(OFF)
--
--
5.0
2.5
Vdc
Gate Source Voltage
(ID = 1.0 mAdc, VDS = 10 Vdc)
BFR30
BFR31
(ID = 50
m
Adc, VDS = 10 Vdc)
BFR30
BFR31
VGS
0.7
--
--
--
3.0
1.3
4.0
2.0
Vdc
1. Device mounted on FR4 glass epoxy printed circuit board using the recommended footprint.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Thermal Clad is a registered trademark of the Berquist Company.
Order this document
by BFR30LT1/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
BFR30LT1
BFR31LT1
CASE 318 08, STYLE 10
SOT 23 (TO 236AB)
1
2
3
Motorola, Inc. 1996
1 DRAIN
2 SOURCE
3
GATE
BFR30LT1 BFR31LT1
2
Motorola SmallSignal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25
C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
Zero Gate Voltage Drain Current
(VDS = 10 Vdc, VGS = 0)
BFR30
BFR31
IDSS
4.0
1.0
10
5.0
mAdc
SMALL SIGNAL CHARACTERISTICS
Forward Transconductance
(ID = 1.0 mAdc, VDS = 10 Vdc, f = 1.0 kHz)
BFR30
BFR31
(ID = 200
m
Adc, VDS = 10 Vdc, f = 1.0 kHz)
BFR30
BFR31
yfs
1.0
1.5
0.5
0.75
4.0
4.5
--
--
mAdc
Output Admittance
(ID = 1.0 mAdc, VDS = 10 Vdc, f = 1.0 kHz)
BFR30
(ID = 200
m
Adc, VDS = 10 Vdc)
BFR31
yos
40
20
25
15
m
Adc
Input Capacitance
(ID = 1.0 mAdc, VDS = 10 Vdc, f = 1.0 MHz)
(ID = 200
m
Adc, VDS = 10 Vdc, f = 1.0 MHz)
Ciss
--
--
5.0
4.0
pF
Reverse Transfer Capacitance
(ID = 1.0 mAdc, VDS = 10 Vdc, f = 1.0 MHz)
(ID = 200
m
Adc, VDS = 10 Vdc, f = 1.0 MHz)
Crss
--
--
1.5
1.5
pF
BFR30LT1 BFR31LT1
3
Motorola SmallSignal Transistors, FETs and Diodes Device Data
TYPICAL CHARACTERISTICS
f, FREQUENCY (kHz)
Figure 1. Noise Figure versus Frequency
RS, SOURCE RESISTANCE (Megohms)
Figure 2. Noise Figure versus Source
Resistance
VDS, DRAIN SOURCE VOLTAGE (VOLTS)
Figure 3. Typical Drain Characteristics
VGS, GATE SOURCE VOLTAGE (VOLTS)
Figure 4. Common Source Transfer
Characteristics
14
0.01
4
3
2
0
1.0
0.4
0.2
0
12
1
0.1
1.0
10
100
5
10
8
6
4
2
1.2
0.8
0.6
0
5
10
15
20
25
0
0.6
0.4
0.2
0.8
1.2
1.0
0.8
0.4
0
1.2
0
, DRAIN CURRENT
(mA)
DI
, DRAIN CURRENT
(mA)
DI
NF
, NOISE FIGURE (dB)
NF
, NOISE FIGURE (dB)
0.001
0.01
0.1
1.0
10
VDS
= 15 V
VGS
= 0
RS
= 1 M
W
VDS = 15 V
VGS = 0
f = 1 kHz
VDS = 15 V
VGS = 0 V
0.2 V
0.4 V
0.6 V
0.8 V
1.0 V
VGS(off)
^
1.2 V
VGS(off)
^
1.2 V
BFR30LT1 BFR31LT1
4
Motorola SmallSignal Transistors, FETs and Diodes Device Data
TYPICAL CHARACTERISTICS
VDS, DRAIN SOURCE VOLTAGE (VOLTS)
Figure 5. Typical Drain Characteristics
VGS, GATE SOURCE VOLTAGE (VOLTS)
Figure 6. Common Source Transfer
Characteristics
VDS, DRAIN SOURCE VOLTAGE (VOLTS)
Figure 7. Typical Drain Characteristics
VGS, GATE SOURCE VOLTAGE (VOLTS)
Figure 8. Common Source Transfer
Characteristics
0
0
4
3
2
1
0
10
4
2
0
4
5
5
10
15
20
25
5
4
3
2
1
0
7
8
6
6
5
4
3
2
1
5
3
2
1
0
, DRAIN CURRENT
(mA)
DI
VDS = 15 V
VGS(off)
^
5.8 V
, DRAIN CURRENT
(mA)
DI
, DRAIN CURRENT
(mA)
DI
, DRAIN CURRENT
(mA)
DI
VDS = 15 V
10
4
2
0
8
6
0
5
10
15
20
25
VGS(off)
^
5.8 V
VGS = 0 V
VGS = 0 V
2 V
1 V
3 V
1 V
2 V
3 V
4 V
5 V
VGS(off)
^
3.5 V
VGS(off)
^
3.5 V
Note: Graphical data is presented for dc conditions. Tabular
data is given for pulsed conditions (Pulse Width = 630
ms, Duty Cycle = 10%). Under dc conditions, self heat-
ing in higher IDSS units reduces IDSS.
BFR30LT1 BFR31LT1
5
Motorola SmallSignal Transistors, FETs and Diodes Device Data
INFORMATION FOR USING THE SOT23 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor packages must
be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
SOT23
mm
inches
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
SOT23 POWER DISSIPATION
The power dissipation of the SOT23 is a function of the
drain pad size. This can vary from the minimum pad size for
soldering to a pad size given for maximum power dissipation.
Power dissipation for a surface mount device is determined
by TJ(max), the maximum rated junction temperature of the
die, R
JA, the thermal resistance from the device junction to
ambient, and the operating temperature, TA. Using the
values provided on the data sheet for the SOT23 package,
PD can be calculated as follows:
PD =
TJ(max) TA
R
JA
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values into
the equation for an ambient temperature TA of 25
C, one can
calculate the power dissipation of the device which in this
case is 225 milliwatts.
PD =
150
C 25
C
556
C/W
= 225 milliwatts
The 556
C/W for the SOT23 package assumes the use
of the recommended footprint on a glass epoxy printed circuit
board to achieve a power dissipation of 225 milliwatts. There
are other alternatives to achieving higher power dissipation
from the SOT23 package. Another alternative would be to
use a ceramic substrate or an aluminum core board such as
Thermal Clad
TM
. Using a board material such as Thermal
Clad, an aluminum core board, the power dissipation can be
doubled using the same footprint.
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within a
short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
Always preheat the device.
The delta temperature between the preheat and
soldering should be 100
C or less.*
When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering method,
the difference shall be a maximum of 10
C.
The soldering temperature and time shall not exceed
260
C for more than 10 seconds.
When shifting from preheating to soldering, the
maximum temperature gradient shall be 5
C or less.
After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and result
in latent failure due to mechanical stress.
Mechanical stress or shock should not be applied during
cooling.
* Soldering a device without preheating can cause excessive
thermal shock and stress which can result in damage to the
device.
BFR30LT1 BFR31LT1
6
Motorola SmallSignal Transistors, FETs and Diodes Device Data
PACKAGE DIMENSIONS
D
J
K
L
A
C
B S
H
G
V
3
1
2
CASE 31808
ISSUE AE
SOT23 (TO236AB)
DIM
A
MIN
MAX
MIN
MAX
MILLIMETERS
0.1102
0.1197
2.80
3.04
INCHES
B
0.0472
0.0551
1.20
1.40
C
0.0350
0.0440
0.89
1.11
D
0.0150
0.0200
0.37
0.50
G
0.0701
0.0807
1.78
2.04
H
0.0005
0.0040
0.013
0.100
J
0.0034
0.0070
0.085
0.177
K
0.0180
0.0236
0.45
0.60
L
0.0350
0.0401
0.89
1.02
S
0.0830
0.0984
2.10
2.50
V
0.0177
0.0236
0.45
0.60
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
STYLE 10:
PIN 1. DRAIN
2. SOURCE
3. GATE
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different
applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does
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associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
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BFR30LT1/D
*BFR30LT1/D*
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