1
BFR92ALT1
MOTOROLA RF DEVICE DATA
The RF Line
NPN Silicon
High-Frequency Transistors
Designed primarily for use in highgain, lownoise, smallsignal UHF and
microwave amplifiers constructed with thick and thinfilm circuits using surface
mount components.
T1 suffix indicates tape and reel packaging of 3,000 units per reel.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
VCEO
15
Vdc
CollectorBase Voltage
VCBO
20
Vdc
EmitterBase Voltage
VEBO
2.0
Vdc
Collector Current -- Continuous
IC
25
mAdc
Maximum Junction Temperature
TJmax
150
C
Power Dissipation, Tcase = 75
C
Derate linearly above Tcase = 75
C @
PD(max)
0.273
3.64
W
mW/
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Storage Temperature
Tstg
55 to +150
C
Thermal Resistance Junction to Case
R
JC
275
C/W
DEVICE MARKING
BFR92ALT1 = P2
ELECTRICAL CHARACTERISTICS
(TA = 25
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage (1)
(IC = 10 mA)
V(BR)CEO
15
--
Vdc
CollectorBase Breakdown Voltage
(IC = 100
A)
V(BR)CBO
20
--
Vdc
EmitterBase Breakdown Voltage
(IC = 100
A)
V(BR)EBO
2.0
--
Vdc
Collector Cutoff Current
(VCB = 10 V)
ICBO
--
50
nA
ON CHARACTERISTICS
DC Current Gain
(IC = 14 mA, VCE = 10 V)
hFE
40
--
--
CollectorEmitter Saturation Voltage (1)
(IC = 25 mA, IB = 5.0 mA)
VCE(sat)
--
0.5
Vdc
BaseEmitter Saturation Voltage (1)
(IC = 25 mA, IB = 5.0 mA)
VBE(sat)
--
1.2
Vdc
NOTE:
(continued)
1. Pulse Width
300
s, Duty Cycle
2.0%.
Order this document
by BFR92ALT1/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
BFR92ALT1
RF TRANSISTORS
NPN SILICON
CASE 31808, STYLE 6
SOT23
LOW PROFILE
Motorola, Inc. 1995
REV 7
BFR92ALT1
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS -- continued
(TA = 25
C unless otherwise noted)
Characteristic
Symbol
Typ
Unit
SMALLSIGNAL CHARACTERISTICS
CurrentGain -- Bandwidth Product
(IC = 14 mA, VCE = 10 V, f = 500 MHz)
fT
4.5
GHz
Noise Figure
(VCE = 1.5 V, IC = 3.0 mA, RS = 50
, f = 500 MHz)
NF
3.0
dB
CapacitanceCollector to Base
(VCB = 10 Vdc, f = 1.0 MHz)
Ccb
0.7
pF
PACKAGE DIMENSIONS
CASE 31808
ISSUE AE
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
D
J
K
L
A
C
B S
H
G
V
3
1
2
DIM
A
MIN
MAX
MIN
MAX
MILLIMETERS
0.1102
0.1197
2.80
3.04
INCHES
B
0.0472
0.0551
1.20
1.40
C
0.0350
0.0440
0.89
1.11
D
0.0150
0.0200
0.37
0.50
G
0.0701
0.0807
1.78
2.04
H
0.0005
0.0040
0.013
0.100
J
0.0034
0.0070
0.085
0.177
K
0.0140
0.0285
0.35
0.69
L
0.0350
0.0401
0.89
1.02
S
0.0830
0.1039
2.10
2.64
V
0.0177
0.0236
0.45
0.60
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIUMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
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BFR92ALT1/D
*BFR92ALT1/D*
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