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Motorola, Inc. 1997
Logic Level TMOS
NChannel Enhancement Mode
This TMOS FET is designed for high voltage, high speed
switching applications such as line drivers, relay drivers, CMOS
logic, microprocessor or TTL to high voltage interface and high
voltage display drivers.
Low Drive Requirement, VGS = 3.0 V max
Inherent Current Sharing Capability Permits Easy Paralleling of
many Devices
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain Source Voltage
VDSS
200
Vdc
GateSource Voltage
VGS
20
Vdc
Drain Current
Continuous(1)
Pulsed(2)
ID
IDM
250
500
mAdc
Total Power Dissipation
@ TA = 25
C
Derate above TA = 25
C
PD
350
6.4
mW
mW/
C
Operating and Storage Temperature Range
TJ, Tstg
55 to +150
C
1. The Power Dissipation of the package may result in a lower continuous drain current.
2. Pulse Test: Pulse Width
v
300
s, Duty Cycle
v
2.0%.
TMOS is a registered trademark of Motorola, Inc.
Order this document
by BS108/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
BS108
200 VOLTS
NCHANNEL TMOS
POWER FET
LOGIC LEVEL
CASE 2904, STYLE 30
TO92
1
2
3
1 DRAIN
2
GATE
3 SOURCE
BS108
2
Motorola SmallSignal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DrainSource Breakdown Voltage
(VGS = 0, ID = 10
A)
V(BR)DSS
200
--
--
Vdc
Zero Gate Voltage Drain Current
(VDSS = 130 Vdc, VGS = 0)
IDSS
--
--
30
nAdc
GateBody Leakage Current
(VGS = 15 Vdc, VDS = 0)
IGSSF
--
--
10
nAdc
ON CHARACTERISTICS (2)
Gate Threshold Voltage
(ID = 1.0 mA, VDS = VGS)
VGS(th)
0.5
--
1.5
Vdc
Static DraintoSource OnResistance
(VGS = 2.0 Vdc, ID = 50 mA)
(VGS = 2.8 Vdc, ID = 100 mA)
rDS(on)
--
--
--
--
10
8.0
Ohms
Drain Cutoff Current
(VGS = 0.2 V, VDS = 70 V)
IDSX
--
--
25
m
A
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 V, VGS = 0, f = 1.0 MHz)
Ciss
--
--
150
pF
Output Capacitance
(VDS = 25 V, VGS = 0, f = 1.0 MHz)
Coss
--
--
30
pF
Reverse Transfer Capacitance
(VDS = 25 V, VGS = 0, f = 1.0 MHz)
Crss
--
--
10
pF
SWITCHING CHARACTERISTICS
TurnOn Time (See Figure 1)
td(on)
--
--
15
ns
TurnOff Time (See Figure 1)
td(off)
--
--
15
ns
2. Pulse Test: Pulse Width
300
s, Duty Cycle = 2.0%.
Figure 1. Switching Test Circuit
Figure 2. Switching Waveforms
RESISTIVE SWITCHING
OUTPUT
INVERTED
50%
10%
50%
toff
ton
Vin
Vout
PULSE
WIDTH
90%
10%
INPUT
90%
90%
10 V
20 dB
50
ATTENUATOR
PULSE GENERATOR
+25 V
Vin
40 pF
1.0 M
50
23
50
Vout
TO SAMPLING SCOPE
50
INPUT
BS108
3
Motorola SmallSignal Transistors, FETs and Diodes Device Data
PACKAGE DIMENSIONS
CASE 02904
(TO226AA)
ISSUE AD
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
F
B
K
G
H
SECTION XX
C
V
D
N
N
X X
SEATING
PLANE
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.175
0.205
4.45
5.20
B
0.170
0.210
4.32
5.33
C
0.125
0.165
3.18
4.19
D
0.016
0.022
0.41
0.55
F
0.016
0.019
0.41
0.48
G
0.045
0.055
1.15
1.39
H
0.095
0.105
2.42
2.66
J
0.015
0.020
0.39
0.50
K
0.500
12.70
L
0.250
6.35
N
0.080
0.105
2.04
2.66
P
0.100
2.54
R
0.115
2.93
V
0.135
3.43
1
STYLE 30:
PIN 1. DRAIN
2. GATE
3. SOURCE
BS108
4
Motorola SmallSignal Transistors, FETs and Diodes Device Data
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Mfax is a trademark of Motorola, Inc.
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BS108/D
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