ChipFind - документация

Электронный компонент: BSS123LT1

Скачать:  PDF   ZIP
1
Motorola SmallSignal Transistors, FETs and Diodes Device Data
TMOS FET Transistor
NChannel
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
DrainSource Voltage
VDSS
100
Vdc
GateSource Voltage
-- Continuous
-- Nonrepetitive (tp
50
s)
VGS
VGSM
20
40
Vdc
Vpk
Drain Current
Continuous(1)
Pulsed(2)
ID
IDM
0.17
0.68
Adc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR 5 Board(3)
TA = 25
C
Derate above 25
C
PD
225
1.8
mW
mW/
C
Thermal Resistance, Junction to Ambient
R
q
JA
556
C/W
Junction and Storage Temperature
TJ, Tstg
55 to +150
C
DEVICE MARKING
BSS123LT1 = SA
ELECTRICAL CHARACTERISTICS
(TA = 25
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DrainSource Breakdown Voltage
(VGS = 0, ID = 250
Adc)
V(BR)DSS
100
--
--
Vdc
Zero Gate Voltage Drain Current
(VGS = 0, VDS = 100 Vdc) TJ = 25
C
TJ = 125
C
IDSS
--
--
--
--
15
60
Adc
GateBody Leakage Current
(VGS = 20 Vdc, VDS = 0)
IGSS
--
--
50
nAdc
ON CHARACTERISTICS(4)
Gate Threshold Voltage
(VDS = VGS, ID = 1.0 mAdc)
VGS(th)
0.8
--
2.8
Vdc
Static DrainSource OnResistance
(VGS = 10 Vdc, ID = 100 mAdc)
rDS(on)
--
5.0
6.0
Forward Transconductance
(VDS = 25 Vdc, ID = 100 mAdc)
gfs
80
--
--
mmhos
1. The Power Dissipation of the package may result in a lower continuous drain current.
2. Pulse Width
v
300
m
s, Duty Cycle
v
2.0%.
3. FR 5 = 1.0
0.75
0.062 in.
4. Pulse Test: Pulse Width
v
300
m
s, Duty Cycle
v
2.0%.
Preferred devices are Motorola recommended choices for future use and best overall value.
Order this document
by BSS123LT1/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
BSS123LT1
Motorola Preferred Device
1
2
3
CASE 318 08, STYLE 21
SOT 23 (TO 236AB)
Motorola, Inc. 1997
3 DRAIN
2 SOURCE
1
GATE
REV 2
BSS123LT1
2
Motorola SmallSignal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25
C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Ciss
--
20
--
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Coss
--
9.0
--
pF
Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Crss
--
4.0
--
pF
SWITCHING CHARACTERISTICS(4)
TurnOn Delay Time
(VCC = 30 Vdc, IC = 0.28 Adc,
td(on)
--
20
--
ns
TurnOff Delay Time
( CC
, C
,
VGS = 10 Vdc, RGS = 50
)
td(off)
--
40
--
ns
REVERSE DIODE
Diode Forward OnVoltage
(ID = 0.34 Adc, VGS = 0 Vdc)
VSD
--
--
1.3
V
4. Pulse Test: Pulse Width
v
300
m
s, Duty Cycle
v
2.0%.
I D
, DRAIN CURRENT
(AMPS)
r DS(on)
,
ST
A
TIC DRAINSOURCE ONRESIST
ANCE
(NORMALIZED)
V
GS(th)
, THRESHOLD
VOL
T
AGE
(NORMALIZED)
I D
, DRAIN CURRENT
(AMPS)
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
10
0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
VDS, DRAN SOURCE VOLTAGE (VOLTS)
Figure 1. Ohmic Region
1.0
0.8
0.6
0.4
0.2
10
0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
VGS, GATE SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
1.2
1.05
1.1
1.10
1.0
0.95
0.9
0.85
0.8
0.75
0.7
60
20
+ 20
+ 60
+ 100
+ 140
60
20
+ 20
+ 60
+ 100
+ 140
T, TEMPERATURE (
C)
Figure 3. Temperature versus Static
DrainSource OnResistance
T, TEMPERATURE (
C)
Figure 4. Temperature versus Gate
Threshold Voltage
TA = 25
C
VGS = 10 V
9 V
8 V
7 V
6 V
4 V
3 V
5 V
VDS = 10 V
55
C
25
C
125
C
VGS = 10 V
ID = 200 mA
VDS = VGS
ID = 1.0 mA
BSS123LT1
3
Motorola SmallSignal Transistors, FETs and Diodes Device Data
INFORMATION FOR USING THE SOT23 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor packages must
be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
SOT23
mm
inches
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
SOT23 POWER DISSIPATION
The power dissipation of the SOT23 is a function of the
pad size. This can vary from the minimum pad size for
soldering to a pad size given for maximum power dissipation.
Power dissipation for a surface mount device is determined
by TJ(max), the maximum rated junction temperature of the
die, R
JA, the thermal resistance from the device junction to
ambient, and the operating temperature, TA. Using the
values provided on the data sheet for the SOT23 package,
PD can be calculated as follows:
PD =
TJ(max) TA
R
JA
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values into
the equation for an ambient temperature TA of 25
C, one can
calculate the power dissipation of the device which in this
case is 225 milliwatts.
PD =
150
C 25
C
556
C/W
= 225 milliwatts
The 556
C/W for the SOT23 package assumes the use
of the recommended footprint on a glass epoxy printed circuit
board to achieve a power dissipation of 225 milliwatts. There
are other alternatives to achieving higher power dissipation
from the SOT23 package. Another alternative would be to
use a ceramic substrate or an aluminum core board such as
Thermal Clad
TM
. Using a board material such as Thermal
Clad, an aluminum core board, the power dissipation can be
doubled using the same footprint.
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within a
short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
Always preheat the device.
The delta temperature between the preheat and
soldering should be 100
C or less.*
When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering method,
the difference shall be a maximum of 10
C.
The soldering temperature and time shall not exceed
260
C for more than 10 seconds.
When shifting from preheating to soldering, the
maximum temperature gradient shall be 5
C or less.
After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and result
in latent failure due to mechanical stress.
Mechanical stress or shock should not be applied during
cooling.
* Soldering a device without preheating can cause excessive
thermal shock and stress which can result in damage to the
device.
BSS123LT1
4
Motorola SmallSignal Transistors, FETs and Diodes Device Data
PACKAGE DIMENSIONS
D
J
K
L
A
C
B S
H
G
V
3
1
2
CASE 31808
ISSUE AE
SOT23 (TO236AB)
DIM
A
MIN
MAX
MIN
MAX
MILLIMETERS
0.1102
0.1197
2.80
3.04
INCHES
B
0.0472
0.0551
1.20
1.40
C
0.0350
0.0440
0.89
1.11
D
0.0150
0.0200
0.37
0.50
G
0.0701
0.0807
1.78
2.04
H
0.0005
0.0040
0.013
0.100
J
0.0034
0.0070
0.085
0.177
K
0.0180
0.0236
0.45
0.60
L
0.0350
0.0401
0.89
1.02
S
0.0830
0.0984
2.10
2.50
V
0.0177
0.0236
0.45
0.60
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals"
must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of
others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury
or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal
Opportunity/Affirmative Action Employer.
Mfax is a trademark of Motorola, Inc.
How to reach us:
USA / EUROPE / Locations Not Listed
: Motorola Literature Distribution;
JAPAN: Nippon Motorola Ltd.; TatsumiSPDJLDC, 6F SeibuButsuryuCenter,
P.O. Box 5405, Denver, Colorado 80217. 3036752140 or 18004412447
3142 Tatsumi KotoKu, Tokyo 135, Japan. 81335218315
Mfax
TM
: RMFAX0@email.sps.mot.com TOUCHTONE 6022446609
ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,
US & Canada ONLY 18007741848
51 Ting Kok Road, Tai Po, N.T., Hong Kong. 85226629298
INTERNET: http://motorola.com/sps
BSS123LT1/D