31
Motorola Bipolar Power Transistor Device Data
NPN Silicon Darlington Power
Transistor
The BU323AP is a monolithic darlington transistor designed for automotive ignition,
switching regulator and motor control applications.
CollectorEmitter Sustaining Voltage --
VCER(sus) = 475 Vdc
125 Watts Capability at 50 Volts
VCE Sat Specified at 40
_
C = 2.0 V Max. at IC = 6.0 A
Photoglass Passivation for Reliability and Stability
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
VCEO(sus)
400
Vdc
CollectorEmitter Voltage
VCEV
475
Vdc
EmitterBase Voltage
VEB
6.0
Vdc
Collector Current -- Continuous
-- Peak (1)
IC
ICM
10
16
Adc
Base Current -- Continuous
-- Peak (1)
IB
IBM
3.0
Adc
Total Power Dissipation -- TC = 25
_
C
-- TC = 100
_
C
Derate above 25
_
C
PD
125
100
1.0
Watts
Watts
W/
_
C
Operating and Storage Junction Temperature Range
TJ, Tstg
65 to + 200
_
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
JC
1.0
_
C/W
Maximum Lead Temperature for Soldering Purposes:
1/8
from Case for 5 Seconds
TL
275
_
C
(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle
x
10%.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BU323AP/D
Motorola, Inc. 1995
BU323AP
DARLINGTON
NPN SILICON
POWER TRANSISTOR
400 VOLTS
125 WATTS
CASE 340D01
TO218 TYPE
COLLECTOR
EMITTER
BASE
1 k
30
REV 7
BU323AP
32
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TC = 25
_
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS1
CollectorEmitter Sustaining Voltage (Figure 1)
L = 10 mH
(IC = 200 mAdc, IB = 0, Vclamp = Rated VCEO)
VCEO(sus)
400
Vdc
CollectorEmitter Sustaining Voltage (Figure 1)
(IC = 3 A, RBE = 100 Ohms, L = 500
H)
Unclamped
VCER(sus)
475
Vdc
Collector Cutoff Current (Rated VCER, RBE = 100 Ohms)
ICER
1
mAdc
Collector Cutoff Current (Rated VCBO, IE = 0)
ICBO
1
mAdc
Emitter Cutoff Current (VEB = 6 Vdc, IC = 0)
IEBO
40
mAdc
ON CHARACTERISTICS1
DC Current Gain
(IC = 3 Adc, VCE = 6 Vdc)
(IC = 6 Adc, VCE = 6 Vdc)
(IC = 10 Adc, VCE = 6 Vdc)
hFE
300
150
50
550
350
150
2000
CollectorEmitter Saturation Voltage
(IC = 3 Adc, IB = 60 mAdc)
(IC = 6 Adc, IB = 120 mAdc)
(IC = 10 Adc, IB = 300 mAdc
(IC = 6 Adc, IB = 120 mAdc, TC = 40
_
C)
VCE(sat)
1.5
1.7
2.7
2.0
Vdc
BaseEmitter Saturation Voltage
(IC = 6 Adc, IB = 120 mAdc)
(IC = 10 Adc, IB = 300 mAdc)
(IC = 6 Adc, IB = 120 mAdc, TC = 40
_
C)
VBE(sat)
2.2
3
2.4
Vdc
BaseEmitter On Voltage (IC = 10 Adc, VCE = 6 Vdc)
VBE(on)
2.5
Vdc
Diode Forward Voltage (IF = 10 Adc)
Vf
2
3.5
Vdc
DYNAMIC CHARACTERISTICS
Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 100 kHz)
Cob
165
350
pF
SWITCHING CHARACTERISTICS
Storage Time
(VCC = 12 Vdc, IC = 6 Adc,
IB1 = IB2 = 0.3 Adc) Fig. 2
ts
7.5
15
s
Fall Time
(VCC = 12 Vdc, IC = 6 Adc,
IB1 = IB2 = 0.3 Adc) Fig. 2
tf
5.2
15
s
FUNCTIONAL TESTS
Second Breakdown Collector Current with
BaseForward Biased
IS/B
See
Figure 10
Pulsed Energy Test (See Figure 12)
IC2L / 2
550
mJ
1Pulse Test: Pulse Width = 300
s, Duty Cycle = 2%.
0 V
t1
20 ms
*
470
1K
30
L
47
1N4001
BC337
VCEO
VCER
100
B
TUT
C
*
E
Vclamp
UNCLAMPED
CLAMPED
* Adjust t1 such that
*
IC reaches Required
*
value.
VCC = 16 Vdc
ftest = 200 Hz
PULSE WIDTH = 1 ms
1K
30
B
TUT
C
E
40
51
100
IB = 0.3 Adc
VCC = 12 Vdc
2
/20 W
IC = 6 Adc
15 Vdc
0 Vdc
1N4001
Figure 1. Sustaining Voltage Test Circuit
Figure 2. Switching Times Test Circuit
BU323AP
33
Motorola Bipolar Power Transistor Device Data
, COLLECT
OR CURRENT
(
A)
I C
V
CE
, COLLECT
OREMITTER VOL
T
AGE (VOL
TS)
2000
0.1
Figure 3. DC Current Gain
IC, COLLECTOR CURRENT (AMP)
20
0.2
0.3
0.5 0.7
1
5
7
10
500
200
100
70
Figure 4. Collector Saturation Region
3
0.002
IB, BASE CURRENT (AMP)
0.5
0.005 0.01
0.02
0.05
0.2
0.5
1
2
2.5
2
1.5
1
IC = 0.5 A
TJ = 25
C
3
10 A
700
300
h
FE
, DC CURRENT
GAIN
TJ = 150
C
25
C
50
30
2
3
0.1
1.7
0.1
Figure 5. CollectorEmitter Saturation Voltage
IC, COLLECTOR CURRENT (A)
0.2
0.5
1.0
2.0
10
1.6
1.4
1.3
0.5
IC/IB = 50
TJ = 25
C
1.5
Figure 6. BaseEmitter Voltage
1000
VCE = 3 Vdc
VCE = 6 Vdc
6
V
CE(sat)
, COLLECT
OREMITTER SA
TURA
TION VOL
T
AGE (V)
1.2
1.1
0.9
0.8
1.0
0.7
0.6
5.0
2.2
0.1
IC, COLLECTOR CURRENT (A)
0.2
0.5
1.0
2.0
10
2.1
1.9
1.8
1.0
2.0
1.7
1.6
1.4
1.3
1.5
1.2
1.1
5.0
TJ = 25
C
Figure 7. TurnOff Switching Time
10
0.2
IC, COLLECTOR CURRENT (AMP)
0.1
0.3
0.5 0.7
1
3
5
20
TJ = 25
C
IC/IB = 20
VCE = 12 Vdc
t,
TIME (
s)
2
7
5
3
2
1
ts
0.7
0.5
0.3
0.2
7
10
tf
Figure 8. Collector Cutoff Region
104
0.2
VBE, BASEEMITTER VOLTAGE (VOLTS)
10 1
0
+ 0.2
103
102
101
100
+ 0.4
+ 0.6
+ 0.8
REVERSE
VCE = 250 Vdc
TJ = 150
C
IC = ICES
75
C
25
C
TJ = 40
C
TJ = 40
C
V
CE(sat)
, COLLECT
OREMITTER SA
TURA
TION VOL
T
AGE (V)
FORWARD
BU323AP
34
Motorola Bipolar Power Transistor Device Data
Figure 9. Thermal Response
t, TIME (ms)
1
0.01
0.01
0.5
0.2
0.1
0.05
0.02
r(t)
,
TRANSIENT
THERMAL
RESIST
ANCE
0.05
1
2
5
10
20
50
100
200
2000
500
R
JC(t) = r(t) R
JC
R
JC =
C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) TC = P(pk) R
JC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D = 0.5
0.2
0.05
0.02
0.01
SINGLE PULSE
0.1
0.7
0.3
0.07
0.03
0.02
0.1
0.5
0.2
(NORMALIZED)
1000
50
5
Figure 10. Forward Bias Safe Operating Area
VCE, COLLECTOREMITTER VOLTAGE (VOLTS)
20
10
5
1
0.005
30
70
BONDING WIRE LIMIT
THERMAL LIMIT (SINGLE PULSE)
SECOND BREAKDOWN LIMIT
I C
, COLLECT
OR CURRENT
(AMP)
dc
100
s
0.2
0.01
10
20
5.0 ms
1.0 ms
100
200 300
500
2
0.1
50
TC = 25
C
There are two limitations on the power handling ability of a
transistor average junction temperature and second break-
down. Safe operating area curves indicate IC VCE limits of
the transistor that must be observed for reliable operation,
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 10 is based on TC = 25
_
C, TJ(pk) is
variable depending on power level. Second breakdown pulse
limits are valid for duty cycles to 10% but must be derated
when TC
25
_
C. Second breakdown limitations do not der-
ate the same as thermal limitations. Allowable current at the
voltages shown on Figure 10 may be found at any case tem-
perature by using the appropriate curve on Figure 11.
TJ(pk) may be calculated from the data in Figure 11. At high
case temperatures, thermal limitations will reduce the power
that can be handled to values less than the limitations im-
posed by second breakdown.
100
0
Figure 11. Power Derating
TC, CASE TEMPERATURE (
C)
80
0
80
120
POWER DERA
TING F
ACT
OR (%)
40
20
40
160
200
60
THERMAL
DERATING
SECOND BREAKDOWN
DERATING
Figure 12. Ignition Test Circuit
0 Vdc
t1
50 ms
1K
30
B
470
VCC = 16 Vdc
1N4001
BC337
47
VZ
C
E
TUT
2.2
0.22
F
100
1N4001
<1
11 mH
INDUCTIVE LOAD
t1 to be selected such that IC reaches 10 Adc before switchoff.
NOTE: Figure 12 specifies energy handling capabilities in an automotive ignition circuit.
VZ = 350 V (BU323P)
VZ =
400 V (BU323AP)
at IZ = 20 mA
BU323AP
35
Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS
CASE 340D01
TO218 TYPE
ISSUE A
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
A
D
V
G
K
S
L
U
B
Q
E
C
J
H
DIM
MIN
MAX
MIN
MAX
INCHES
MILLIMETERS
A
19.00
19.60
0.749
0.771
B
14.00
14.50
0.551
0.570
C
4.20
4.70
0.165
0.185
D
1.00
1.30
0.040
0.051
E
1.45
1.65
0.058
0.064
G
5.21
5.72
0.206
0.225
H
2.60
3.00
0.103
0.118
J
0.40
0.60
0.016
0.023
K
28.50
32.00
1.123
1.259
L
14.70
15.30
0.579
0.602
Q
4.00
4.25
0.158
0.167
S
17.50
18.10
0.689
0.712
U
3.40
3.80
0.134
0.149
V
1.50
2.00
0.060
0.078
1
2
3
4
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