1
Motorola Bipolar Power Transistor Device Data
Advance Information
NPN Silicon Power Darlington
High Voltage Autoprotected
The BU323Z is a planar, monolithic, highvoltage power Darlington with a builtin
active zener clamping circuit. This device is specifically designed for unclamped,
inductive applications such as Electronic Ignition, Switching Regulators and Motor
Control, and exhibit the following main features:
Integrated HighVoltage Active Clamp
Tight Clamping Voltage Window (350 V to 450 V) Guaranteed
Over the 40
C to +125
C Temperature Range
Clamping Energy Capability 100% Tested in a Live
Ignition Circuit
High DC Current Gain/Low Saturation Voltages
Specified Over Full Temperature Range
Design Guarantees Operation in SOA at All Times
Offered in Plastic SOT93/TO218 Type or
TO220 Packages
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorEmitter Sustaining Voltage
VCEO
350
Vdc
CollectorEmitter Voltage
VEBO
6.0
Vdc
Collector Current -- Continuous
-- Peak
IC
ICM
10
20
Adc
Base Current -- Continuous
-- Peak
IB
IBM
3.0
6.0
Adc
Total Power Dissipation
(TC = 25
_
C)
Derate above 25
_
C
PD
150
1.0
Watts
W/
_
C
Operating and Storage Junction Temperature Range
TJ, Tstg
65 to + 175
_
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
JC
1.0
_
C/W
Maximum Lead Temperature for Soldering Purposes:
1/8
from Case for 5 Seconds
TL
260
_
C
This document contains information on a new product. Specifications and information herein are subject to change without notice.
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BU323Z/D
Motorola, Inc. 1996
BU323Z
AUTOPROTECTED
DARLINGTON
10 AMPERES
360 450 VOLTS CLAMP
150 WATTS
CASE 340D02
SOT93/TO218 TYPE
360 V
CLAMP
REV 8
BU323Z
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TC = 25
_
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS (1)
CollectorEmitter Clamping Voltage (IC = 7.0 A)
(TC = 40
C to +125
C)
VCLAMP
350
--
450
Vdc
CollectorEmitter Cutoff Current
(VCE = 200 V, IB = 0)
ICEO
--
--
100
Adc
EmitterBase Leakage Current
(VEB = 6.0 Vdc, IC = 0)
IEBO
--
--
50
mAdc
ON CHARACTERISTICS (1)
BaseEmitter Saturation Voltage
(IC = 8.0 Adc, IB = 100 mAdc)
(IC = 10 Adc, IB = 0.25 Adc)
VBE(sat)
--
--
--
--
2.2
2.5
Vdc
CollectorEmitter Saturation Voltage
(IC = 7.0 Adc, IB = 70 mAdc)
(TC = 125
C)
(IC = 8.0 Adc, IB = 0.1 Adc)
(TC = 125
C)
(IC = 10 Adc, IB = 0.25 Adc)
VCE(sat)
--
--
--
--
--
--
--
--
--
--
1.6
1.8
1.8
2.1
1.7
Vdc
BaseEmitter On Voltage
(IC = 5.0 Adc, VCE = 2.0 Vdc)
(TC = 40
C to +125
C)
(IC = 8.0 Adc, VCE = 2.0 Vdc)
VBE(on)
1.1
1.3
--
--
2.1
2.3
Vdc
Diode Forward Voltage Drop
(IF = 10 Adc)
VF
--
--
2.5
Vdc
DC Current Gain
(IC = 6.5 Adc, VCE = 1.5 Vdc)
(TC = 40
C to +125
C)
(IC = 5.0 Adc, VCE = 4.6 Vdc)
hFE
150
500
--
--
--
3400
--
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth
(IC = 0.2 Adc, VCE = 10 Vdc, f = 1.0 MHz)
fT
--
--
2.0
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cob
--
--
200
pF
Input Capacitance
(VEB = 6.0 V)
Cib
--
--
550
pF
CLAMPING ENERGY (see notes)
Repetitive NonDestructive Energy Dissipated at turnoff:
(IC = 7.0 A, L = 8.0 mH, RBE = 100
) (see Figures 2 and 4)
WCLAMP
200
--
--
mJ
SWITCHING CHARACTERISTICS: Inductive Load (L = 10 mH)
Fall Time
(IC = 6.5 A, IB1 = 45 mA,
tfi
--
625
--
ns
Storage Time
(IC = 6.5 A, IB1 = 45 mA,
VBE(off) = 0, RBE(off) = 0,
VCC 14 V VZ 300 V)
tsi
--
10
30
s
Crossover Time
(
)
(
)
VCC = 14 V, VZ = 300 V)
tc
--
1.7
--
s
(1) Pulse Test: Pulse Width
300
s, Duty Cycle = 2.0%.
BU323Z
3
Motorola Bipolar Power Transistor Device Data
Figure 1. IC = f(VCE) Curve Shape
IC
INOM = 6.5 A
Output transistor turns on: IC = 40 mA
High Voltage Circuit turns on: IC = 20 mA
Avalanche diode turns on: IC = 100
A
Icer Leakage Current
250 V
300 V
340 V
VCE
VCLAMP NOMINAL
= 400 V
By design, the BU323Z has a builtin avalanche diode and
a special high voltage driving circuit. During an autoprotect
cycle, the transistor is turned on again as soon as a voltage,
determined by the zener threshold and the network, is
reached. This prevents the transistor from going into a
Reverse Bias Operating limit condition. Therefore, the device
will have an extended safe operating area and will always
appear to be in "FBSOA." Because of the builtin zener and
associated network, the IC = f(VCE) curve exhibits an
unfamiliar shape compared to standard products as shown in
Figure 1.
Figure 2. Basic Energy Test Circuit
MERCURY CONTACTS
WETTED RELAY
VCE
MONITOR
(VGATE)
L INDUCTANCE
(8 mH)
IB CURRENT
SOURCE
VBEoff
IB2 SOURCE
IC CURRENT
SOURCE
0.1
NON
INDUCTIVE
IC
MONITOR
RBE = 100
The bias parameters, VCLAMP, IB1, VBE(off), IB2, IC, and
the inductance, are applied according to the Device Under
Test (DUT) specifications. VCE and IC are monitored by the
test system while making sure the load line remains within
the limits as described in Figure 4.
Note: All BU323Z ignition devices are 100% energy tested,
per the test circuit and criteria described in Figures 2 and 4,
to the minimum guaranteed repetitive energy, as specified in
the device parameter section. The device can sustain this
energy on a repetitive basis without degrading any of the
specified electrical characteristics of the devices. The units
under test are kept functional during the complete test se-
quence for the test conditions described:
IC(peak) = 7.0 A, ICH = 5.0 A, ICL = 100 mA, IB = 100 mA,
RBE = 100
, Vgate = 280 V, L = 8.0 mH
Figure 3. Forward Bias Safe Operating Area
VCE, COLLECTOREMITTER VOLTAGE (VOLTS)
1000
340 V
100
10
0.001
0.01
0.1
1
10
TC = 25
C
250 ms
10 ms
1 ms
300
s
I C
, COLLECT
OR
CURRENT
(AMPS)
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
CURVES APPLY BELOW
RATED VCEO
BU323Z
4
Motorola Bipolar Power Transistor Device Data
Figure 4. Energy Test Criteria for BU323Z
The shaded area represents the amount of energy the de-
vice can sustain, under given DC biases (IC/IB/VBE(off)/
RBE), without an external clamp; see the test schematic dia-
gram, Figure 2.
The transistor PASSES the Energy test if, for the inductive
load and ICPEAK/IB/VBE(off) biases, the VCE remains outside
the shaded area and greater than the VGATE minimum limit,
Figure 4a.
The transistor FAILS if the VCE is less than the VGATE
(minimum limit) at any point along the VCE/IC curve as
shown on Figures 4b, and 4c. This assures that hot spots
and uncontrolled avalanche are not being generated in the
die, and the transistor is not damaged, thus enabling the
sustained energy level required.
The transistor FAILS if its Collector/Emitter breakdown
voltage is less than the VGATE value, Figure 4d.
ICPEAK
Figure 4a.
IC
IC HIGH
IC LOW
VCE
VGATE MIN
ICPEAK
IC
IC HIGH
IC LOW
VCE
VGATE MIN
Figure 4b.
ICPEAK
IC
IC HIGH
IC LOW
VCE
VGATE MIN
Figure 4c.
ICPEAK
IC
IC HIGH
IC LOW
VCE
VGATE MIN
Figure 4d.
BU323Z
5
Motorola Bipolar Power Transistor Device Data
Figure 5. DC Current Gain
IC, COLLECTOR CURRENT (MILLIAMPS)
10000
1000
100
10
100
1000
10000
TJ = 125
C
25
C
h
FE
, DC CURRENT
GAIN
40
C
VCE = 1.5 V
Figure 6. DC Current Gain
IC, COLLECTOR CURRENT (MILLIAMPS)
100000
1000
100
10
100
1000
10000
TYPICAL
h
FE
, DC CURRENT
GAIN
VCE = 5 V, TJ = 25
C
10000
TYP + 6
TYP 6
Figure 7. Collector Saturation Region
IB, BASE CURRENT (AMPS)
100
10
1
0
2.5
4.0
5.0
TJ = 25
C
IC = 3 A
V
CE
, COLLECT
OREMITTER VOL
T
AGE (VOL
TS)
4.5
2.0
3.5
3.0
1.0
0.5
1.5
5 A
7 A
8 A
10 A
Figure 8. CollectorEmitter Saturation Voltage
IC, COLLECTOR CURRENT (AMPS)
10
1
0.1
0.4
1.4
2.0
2.4
V
CE
, COLLECT
OREMITTER VOL
T
AGE (VOL
TS)
2.2
1.2
1.8
1.6
0.8
0.6
1.0
TJ = 125
C
25
C
IC/IB = 150
Figure 9. BaseEmitter Saturation Voltage
IC, COLLECTOR CURRENT (AMPS)
10
1
0.1
0.8
1.8
2.0
1.4
1.6
1.2
1.0
Figure 10. BaseEmitter "ON" Voltages
IC, COLLECTOR CURRENT (AMPS)
10
1
0.1
0.6
1.4
1.8
2.0
1.2
1.6
0.8
1.0
V
BE
, BASEEMITTER VOL
T
AGE (VOL
TS)
IC/IB = 150
TJ = 25
C
125
C
V
BE(on)
, BASEEMITTER VOL
T
AGE (VOL
TS)
VCE = 2 VOLTS
TJ = 25
C
125
C
BU323Z
6
Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS
CASE 340D02
SOT93/TO218 TYPE
ISSUE B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
A
D
V
G
K
S
L
U
B
Q
E
C
J
H
DIM
MIN
MAX
MIN
MAX
INCHES
MILLIMETERS
A
20.35
0.801
B
14.70
15.20
0.579
0.598
C
4.70
4.90
0.185
0.193
D
1.10
1.30
0.043
0.051
E
1.17
1.37
0.046
0.054
G
5.40
5.55
0.213
0.219
H
2.00
3.00
0.079
0.118
J
0.50
0.78
0.020
0.031
K
31.00 REF
1.220 REF
L
16.20
0.638
Q
4.00
4.10
0.158
0.161
S
17.80
18.20
0.701
0.717
U
4.00 REF
0.157 REF
V
1.75 REF
0.069
1
2
3
4
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals"
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BU323Z/D
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