1
Motorola Bipolar Power Transistor Device Data
NPN Power Transistors
These devices are high voltage, high speed transistors for horizontal deflection
output stages of TV's and CRT's.
High Voltage: VCEV = 330 or 400 V
Fast Switching Speed: tf = 750 ns (max)
Low Saturation Voltage: VCE(sat) = 1 V (max) @ 5 A
Packaged in Compact JEDEC TO220AB
MAXIMUM RATINGS
Rating
Symbol
BU406
BU407
Unit
CollectorEmitter Voltage
VCEO
200
150
Vdc
CollectorEmitter Voltage
VCEV
400
330
Vdc
CollectorBase Voltage
VCBO
400
330
Vdc
Emitter Base Voltage
VEBO
6
Vdc
Collector Current -- Continuous
Peak Repetitive
Peak (10 ms)
IC
7
10
15
Adc
Base Current
IB
4
Adc
Total Device Dissipation, TC = 25
_
C
Derate above TC = 25
_
C
PD
60
0.48
Watts
W/
_
C
Operating and Storage
Junction Temperature Range
TJ, Tstg
65 to 150
_
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
JC
2.08
_
C/W
Thermal Resistance, Junction to Ambient
R
JA
70
_
C/W
Lead Temperature for Soldering Purposes:
1/8
from Case for 5 Seconds
TL
275
_
C
ELECTRICAL CHARACTERISTICS
(TC = 25
_
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage(1)
BU406
(IC = 100 mAdc, IB = 0)
BU407
VCEO(sus)
200
150
--
--
--
--
Vdc
Collector Cutoff Current
(VCE = Rated VCEV, VBE = 0)
(VCE = Rated VCEO + 50 Vdc, VBE = 0)
(VCE = Rated VCEO + 50 Vdc, VBE = 0, TC = 150
_
C)
ICES
--
--
--
--
--
--
5
0.1
1
mAdc
Emitter Cutoff Current
BU406, BU407
(VEB = 6 Vdc, IC = 0)
IEBO
--
--
1
mAdc
ON CHARACTERISTICS (1)
CollectorEmitter Saturation Voltage (IC = 5 Adc, IB = 0.5 Adc)
VCE(sat)
--
--
1
Vdc
BaseEmitter Saturation Voltage (IC = 5 Adc, IB = 0.5 Adc)
VBE(sat)
--
--
1.2
Vdc
Forward Diode Voltage (IEC = 5 Adc) "D" only
VEC
--
--
2
Volts
(1) Pulse Test: Pulse Width
v
300
s, Duty Cycle
v
1%.
(continued)
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BU406/D
Motorola, Inc. 1995
BU406
BU407
7 AMPERES
NPN SILICON
POWER TRANSISTORS
60 WATTS
150 and 200 VOLTS
CASE 221A06
TO220AB
REV 2
BU406 BU407
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS -- continued
(TC = 25
_
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
DYNAMIC CHARACTERISTICS
CurrentGain -- Bandwidth Product
(IC = 0.5 Adc, VCE = 10 Vdc, ftest = 20 MHz)
fT
10
--
--
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1 MHz)
Cob
--
80
--
pF
SWITCHING CHARACTERISTICS
Inductive Load Crossover Time
(VCC = 40 Vdc, IC = 5 Adc,
IB1 = IB2 = 0.5 Adc, L = 150
H)
tc
--
--
0.75
s
100
0.1
Figure 1. DC Current Gain
IC, COLLECTOR CURRENT (AMPS)
10
0.2 0.3 0.5
0.7
1
5
7
10
50
20
70
30
h
FE
, DC CURRENT
GAIN
TJ = 100
C
25
C
2
3
VCE = 5 V
10
2
VCE, COLLECTOREMITTER VOLTAGE (VOLTS)
1
7
20
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
I C
, COLLECT
OR CURRENT
(AMP)
3
5
30
50
70
200
0.1
10
TC = 25
C
Figure 2. Maximum Rated Forward
Bias Safe Operating Area
100
BU407
BU406
dc
BU406 BU407
3
Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS
CASE 221A06
TO220AB
ISSUE Y
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.570
0.620
14.48
15.75
B
0.380
0.405
9.66
10.28
C
0.160
0.190
4.07
4.82
D
0.025
0.035
0.64
0.88
F
0.142
0.147
3.61
3.73
G
0.095
0.105
2.42
2.66
H
0.110
0.155
2.80
3.93
J
0.018
0.025
0.46
0.64
K
0.500
0.562
12.70
14.27
L
0.045
0.060
1.15
1.52
N
0.190
0.210
4.83
5.33
Q
0.100
0.120
2.54
3.04
R
0.080
0.110
2.04
2.79
S
0.045
0.055
1.15
1.39
T
0.235
0.255
5.97
6.47
U
0.000
0.050
0.00
1.27
V
0.045
1.15
Z
0.080
2.04
B
Q
H
Z
L
V
G
N
A
K
F
1
2 3
4
D
SEATING
PLANE
T
C
S
T
U
R
J
BU406 BU407
4
Motorola Bipolar Power Transistor Device Data
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
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BU406/D
*BU406/D*
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