1
Motorola Bipolar Power Transistor Device Data
Designer's
TM
Data Sheet
High Speed, High Gain Bipolar
NPN Power Transistor with
Integrated Collector-Emitter
Diode and Built-in Efficient
Antisaturation Network
The BUL45D2 is stateofart High Speed High gain BIPolar transistor (H2BIP).
High dynamic characteristics and lot to lot minimum spread (
150 ns on storage time)
make it ideally suitable for light ballast applications. Therefore, there is no need to
guarantee an hFE window.
Main features:
Low Base Drive Requirement
High Peak DC Current Gain (55 Typical) @ IC = 100 mA
Extremely Low Storage Time Min/Max Guarantees Due to the
H2BIP Structure which Minimizes the Spread
Integrated CollectorEmitter Free Wheeling Diode
Fully Characterized and Guaranteed Dynamic VCE(sat)
"6 Sigma" Process Providing Tight and Reproductible Parameter Spreads
It's characteristics make it also suitable for PFC application.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorEmitter Sustaining Voltage
VCEO
400
Vdc
CollectorBase Breakdown Voltage
VCBO
700
Vdc
CollectorEmitter Breakdown Voltage
VCES
700
Vdc
EmitterBase Voltage
VEBO
12
Vdc
Collector Current -- Continuous
-- Peak (1)
IC
ICM
5
10
Adc
Base Current -- Continuous
Base Current
-- Peak (1)
IB
IBM
2
4
Adc
*Total Device Dissipation @ TC = 25
_
C
*Derate above 25
C
PD
75
0.6
Watt
W/
_
C
Operating and Storage Temperature
TJ, Tstg
65 to 150
_
C
THERMAL CHARACTERISTICS
Thermal Resistance
-- Junction to Case
-- Junction to Ambient
R
JC
R
JA
1.65
62.5
_
C/W
Maximum Lead Temperature for Soldering Purposes:
1/8
from case for 5 seconds
TL
260
_
C
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle
10%.
Designer's and SWITCHMODE are trademarks of Motorola, Inc.
Designer's Data for "Worst Case" Conditions -- The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves -- representing boundaries on device characteristics -- are given to facilitate "worst case" design.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BUL45D2/D
Motorola, Inc. 1995
BUL45D2
POWER TRANSISTORS
5 AMPERES
700 VOLTS
75 WATTS
CASE 221A06
TO220AB
BUL45D2
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TC = 25
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage
(IC = 100 mA, L = 25 mH)
VCEO(sus)
400
450
Vdc
CollectorBase Breakdown Voltage
(ICBO = 1 mA)
VCBO
700
910
Vdc
EmitterBase Breakdown Voltage
(IEBO = 1 mA)
VEBO
12
14.1
Vdc
Collector Cutoff Current
(VCE = Rated VCEO, IB = 0)
ICEO
100
Adc
Collector Cutoff Current (VCE = Rated VCES, VEB = 0)
Collector Cutoff Current
(VCE = 500 V, VEB = 0)
@ TC = 25
C
@ TC = 125
C
@ TC = 125
C
ICES
100
500
100
Adc
EmitterCutoff Current
(VEB = 10 Vdc, IC = 0)
IEBO
100
Adc
ON CHARACTERISTICS
BaseEmitter Saturation Voltage
(IC = 0.8 Adc, IB = 80 mAdc)
@ TC = 25
C
@ TC = 125
C
VBE(sat)
0.8
0.7
1
0.9
Vdc
(IC = 2 Adc, IB = 0.4 Adc)
@ TC = 25
C
@ TC = 125
C
0.89
0.79
1
0.9
CollectorEmitter Saturation Voltage
(IC = 0.8 Adc, IB = 80 mAdc)
@ TC = 25
C
@ TC = 125
C
VCE(sat)
0.28
0.32
0.4
0.5
Vdc
(IC = 2 Adc, IB = 0.4 Adc)
@ TC = 25
C
@ TC = 125
C
0.32
0.38
0.5
0.6
(IC = 0.8 Adc, IB = 40 mAdc)
@ TC = 25
C
@ TC = 125
C
0.46
0.62
0.75
1
DC Current Gain
(IC = 0.8 Adc, VCE = 1 Vdc)
@ TC = 25
C
@ TC = 125
C
hFE
22
20
34
29
--
(IC = 2 Adc, VCE = 1 Vdc)
@ TC = 25
C
@ TC = 125
C
10
7
14
9.5
DIODE CHARACTERISTICS
Forward Diode Voltage
(IEC = 1 Adc)
@ TC = 25
C
@ TC = 125
C
VEC
1.04
0.7
1.5
V
(IEC = 2 Adc)
@ TC = 25
C
@ TC = 125
C
1.2
1.6
(IEC = 0.4 Adc)
@ TC = 25
C
@ TC = 125
C
0.85
0.62
1.2
Forward Recovery Time (see Figure 27)
(IF = 1 Adc, di/dt = 10 A/
s)
@ TC = 25
C
Tfr
330
ns
(IF = 2 Adc, di/dt = 10 A/
s)
@ TC = 25
C
360
(IF = 0.4 Adc, di/dt = 10 A/
s)
@ TC = 25
C
320
BUL45D2
3
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TC = 25
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth
(IC = 0.5 Adc, VCE = 10 Vdc, f = 1 MHz)
fT
13
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1 MHz)
Cob
50
75
pF
Input Capacitance
(VEB = 8 Vdc)
Cib
340
500
pF
DYNAMIC SATURATION VOLTAGE
Dynamic Saturation
Voltage:
Determined 1
s and
3
s respectively after
rising IB1 reaches
90% of final IB1
IC = 1 A
IB1 = 100 mA
VCC = 300 V
@ 1
s
@ TC = 25
C
@ TC = 125
C
VCE(dsat)
3.7
9.4
V
Dynamic Saturation
Voltage:
Determined 1
s and
3
s respectively after
rising IB1 reaches
90% of final IB1
IB1 = 100 mA
VCC = 300 V
@ 3
s
@ TC = 25
C
@ TC = 125
C
0.35
2.7
V
s and
3
s respectively after
rising IB1 reaches
90% of final IB1
IC = 2 A
IB1 = 0.8 A
VCC = 300 V
@ 1
s
@ TC = 25
C
@ TC = 125
C
3.9
12
V
90% of final IB1
IB1 = 0.8 A
VCC = 300 V
@ 3
s
@ TC = 25
C
@ TC = 125
C
0.4
1.5
V
SWITCHING CHARACTERISTICS: Resistive Load (D.C.
10%, Pulse Width = 20
s)
Turnon Time
IC = 2 Adc, IB1 = 0.4 Adc
IB2 = 1 Adc
VCC = 300 Vdc
@ TC = 25
C
@ TC = 125
C
ton
90
105
150
ns
Turnoff Time
IB2 = 1 Adc
VCC = 300 Vdc
@ TC = 25
C
@ TC = 125
C
toff
1.15
1.5
1.3
s
Turnon Time
IC = 2 Adc, IB1 = 0.4 Adc
IB2 = 0.4 Adc
VCC = 300 Vdc
@ TC = 25
C
@ TC = 125
C
ton
90
110
150
ns
Turnoff Time
IB2 = 0.4 Adc
VCC = 300 Vdc
@ TC = 25
C
@ TC = 125
C
toff
2.1
3.1
2.4
s
SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = 300 V, VCC = 15 V, L = 200
H)
Fall Time
IC = 1 Adc
IB1 = 100 mAdc
IB2 = 500 mAdc
@ TC = 25
C
@ TC = 125
C
tf
90
93
150
ns
Storage Time
IC = 1 Adc
IB1 = 100 mAdc
IB2 = 500 mAdc
@ TC = 25
C
@ TC = 125
C
ts
0.72
1.05
0.9
s
Crossover Time
IB2 = 500 mAdc
@ TC = 25
C
@ TC = 125
C
tc
95
95
150
ns
Fall Time
IC = 2 Adc
IB1 = 0.4 Adc
IB2 = 0.4 Adc
@ TC = 25
C
@ TC = 125
C
tf
80
105
150
ns
Storage Time
IC = 2 Adc
IB1 = 0.4 Adc
IB2 = 0.4 Adc
@ TC = 25
C
@ TC = 125
C
ts
1.95
2.9
2.25
s
Crossover Time
IB2 = 0.4 Adc
@ TC = 25
C
@ TC = 125
C
tc
225
450
300
ns
BUL45D2
4
Motorola Bipolar Power Transistor Device Data
TYPICAL STATIC CHARACTERISTICS
Figure 1. DC Current Gain @ 1 Volt
100
80
60
40
20
0
10
1
0.1
0.01
0.001
IC, COLLECTOR CURRENT (AMPS)
h
FE
, DC CURRENT
GAIN
TJ = 125
C
TJ = 25
C
TJ = 20
C
VCE = 1 V
Figure 2. DC Current Gain @ 5 Volt
100
80
60
40
20
0
10
1
0.1
0.01
0.001
IC, COLLECTOR CURRENT (AMPS)
h
FE
, DC CURRENT
GAIN
TJ = 125
C
TJ = 25
C
TJ = 20
C
VCE = 5 V
Figure 3. Collector Saturation Region
4
2
0
10
0.1
0.01
0.001
IB, BASE CURRENT (AMPS)
IC = 500 mA
Figure 4. CollectorEmitter Saturation Voltage
10
1
0.1
10
1
0.1
0.01
0.001
IC, COLLECTOR CURRENT (AMPS)
TJ = 125
C
TJ = 25
C
TJ = 20
C
IC/IB = 5
V
CE
, VOL
T
AGE (VOL
TS)
V
CE
, VOL
T
AGE (VOL
TS)
3
1
TJ = 25
C
1 A
4 A
Figure 5. CollectorEmitter Saturation Voltage
10
1
0.1
10
0.1
0.01
0.001
IC, COLLECTOR CURRENT (AMPS)
Figure 6. CollectorEmitter Saturation Voltage
10
1
0.1
1
0.1
0.01
0.001
IC, COLLECTOR CURRENT (AMPS)
TJ = 125
C
TJ = 25
C
TJ = 20
C
V
CE
, VOL
T
AGE (VOL
TS)
V
CE
, VOL
T
AGE (VOL
TS)
1
IC/IB = 10
TJ = 125
C
TJ = 25
C
TJ = 20
C
IC/IB = 20
1
5 A
3 A
2 A
10
BUL45D2
5
Motorola Bipolar Power Transistor Device Data
TYPICAL STATIC CHARACTERISTICS
Figure 7. BaseEmitter Saturation Region
10
1
0.1
10
0.1
0.01
0.001
IC, COLLECTOR CURRENT (AMPS)
Figure 8. BaseEmitter Saturation Region
10
1
0.1
10
0.1
0.01
0.001
IC, COLLECTOR CURRENT (AMPS)
TJ = 125
C
TJ = 25
C
TJ = 20
C
V
BE
, VOL
T
AGE (VOL
TS)
V
BE
, VOL
T
AGE (VOL
TS)
1
TJ = 125
C
TJ = 25
C
TJ = 20
C
IC/IB = 10
1
IC/IB = 5
Figure 9. BaseEmitter Saturation Region
10
1
0.1
1
0.1
0.01
0.001
IC, COLLECTOR CURRENT (AMPS)
Figure 10. Forward Diode Voltage
10
1
0.1
10
0.1
0.01
REVERSE EMITTERCOLLECTOR CURRENT (AMPS)
125
C
25
C
V
BE
, VOL
T
AGE (VOL
TS)
FOR
W
ARD DIODE VOL
T
AGE (VOL
TS)
TJ = 125
C
TJ = 25
C
TJ = 20
C
1
IC/IB = 20
Figure 11. Capacitance
1000
10
1
100
10
1
VR, REVERSE VOLTAGE (VOLTS)
C, CAP
ACIT
ANCE (pF)
100
Cib (pF)
Cob (pF)
TJ = 25
C
f(test) = 1 MHz
Figure 12. BVCER = f(ICER)
1000
700
400
1000
100
10
RBE (
)
BVCER (VOL
TS)
TJ = 25
C
BVCER @ 10 mA
900
800
600
500
BVCER(sus) @ 200 mA
10
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