1
Motorola Bipolar Power Transistor Device Data
Complementary Silicon Power
Transistors
These complementary silicon power transistors are designed for highspeed
switching applications, such as switching regulators and high frequency inverters.
The devices are also wellsuited for drivers for high power switching circuits.
Fast Switching -- tf = 90 ns (Max)
Key Parameters Specified @ 100
_
C
Low CollectorEmitter Saturation Voltage --
VCE(sat) = 1.0 V (Max) @ 8.0 A
Complementary Pairs Simplify Circuit Designs
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
VCEO
80
Vdc
CollectorEmitter Voltage
VCEV
100
Vdc
Emitter Base Voltage
VEB
7.0
Vdc
Collector Current -- Continuous
-- Peak (1)
IC
ICM
15
20
Adc
Total Power Dissipation
@ TC = 25
_
C
Derate above 25
_
C
PD
83
0.67
Watts
W/
_
C
Operating and Storage Junction
Temperature Range
TJ, Tstg
55 to 150
_
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
JC
1.5
_
C/W
Thermal Resistance, Junction to Ambient
R
JA
62.5
_
C/W
Maximum Lead Temperature for Soldering
Purposes: 1/8
from Case for 5 Seconds
TL
275
_
C
(1) Pulse Width
v
6.0 ms, Duty Cycle
v
50%.
NOTE: All polarities are shown for NPN transistors. For PNP transistors, reverse polarities.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by D44VH/D
Motorola, Inc. 1995
D44VH
D45VH
15 AMPERE
COMPLEMENTARY
SILICON
POWER TRANSISTORS
80 VOLTS
83 WATTS
CASE 221A06
TO220AB
NPN
PNP
D44VH D45VH
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TC = 25
_
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage (1)
(IC = 25 mAdc, IB = 0)
VCEO(sus)
80
--
--
Vdc
CollectorEmitter Cutoff Current
(VCE = Rated VCEV, VBE(off) = 4.0 Vdc)
(VCE = Rated VCEV, VBE(off) = 4.0 Vdc, TC = 100
_
C)
ICEV
--
--
--
--
10
100
Adc
Emitter Base Cutoff Current
(VEB = 7.0 Vdc, IC = 0)
IEBO
--
--
10
Adc
ON CHARACTERISTICS (1)
DC Current Gain
(IC = 2.0 Adc, VCE = 1.0 Vdc)
(IC = 4.0 Adc, VCE = 1.0 Vdc)
hFE
35
20
--
--
--
--
--
CollectorEmitter Saturation Voltage
(IC = 8.0 Adc, IB = 0.4 Adc)
D44VH10
(IC = 8.0 Adc, IB = 0.8 Adc)
D45VH10
(IC = 15 Adc, IB = 3.0 Adc, TC = 100
_
C)
D44VH10
D45VH10
VCE(sat)
--
--
--
--
--
--
--
--
0.4
1.0
0.8
1.5
Vdc
BaseEmitter Saturation Voltage
(IC = 8.0 Adc, IB = 0.4 Adc)
D44VH10
(IC = 8.0 Adc, IB = 0.8 Adc)
D45VH10
(IC = 8.0 Adc, IB = 0.4 Adc, TC = 100
_
C)
D44VH10
(IC = 8.0 Adc, IB = 0.8 Adc, TC = 100
_
C)
D45VH10
VBE(sat)
--
--
--
--
--
--
--
--
1.2
1.0
1.1
1.5
Vdc
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth Product
(IC = 0.1 Adc, VCE = 10 Vdc, f = 20 MHz)
fT
--
50
--
MHz
Output Capacitance
(VCB = 10 Vdc, IC = 0, ftest = 1.0 MHz)
D44VH10
D45VH10
Cob
--
--
120
275
--
--
pF
SWITCHING CHARACTERISTICS
Delay Time
(VCC = 20 Vdc, IC = 8.0 Adc,
IB1 = IB2 = 0.8 Adc)
td
--
--
50
ns
Rise Time
(VCC = 20 Vdc, IC = 8.0 Adc,
tr
--
--
250
Storage Time
CC = 20 Vdc, IC = 8.0 Adc,
IB1 = IB2 = 0.8 Adc)
ts
--
--
700
Fall Time
tf
--
--
90
(1) Pulse Test: Pulse Width
v
300
s, Duty Cycle
v
2%.
D44VH D45VH
3
Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS
CASE 221A06
TO220AB
ISSUE Y
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.570
0.620
14.48
15.75
B
0.380
0.405
9.66
10.28
C
0.160
0.190
4.07
4.82
D
0.025
0.035
0.64
0.88
F
0.142
0.147
3.61
3.73
G
0.095
0.105
2.42
2.66
H
0.110
0.155
2.80
3.93
J
0.018
0.025
0.46
0.64
K
0.500
0.562
12.70
14.27
L
0.045
0.060
1.15
1.52
N
0.190
0.210
4.83
5.33
Q
0.100
0.120
2.54
3.04
R
0.080
0.110
2.04
2.79
S
0.045
0.055
1.15
1.39
T
0.235
0.255
5.97
6.47
U
0.000
0.050
0.00
1.27
V
0.045
1.15
Z
0.080
2.04
B
Q
H
Z
L
V
G
N
A
K
F
1
2 3
4
D
SEATING
PLANE
T
C
S
T
U
R
J
D44VH D45VH
4
Motorola Bipolar Power Transistor Device Data
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