1
Motorola Optoelectronics Device Data
6-Pin DIP Optoisolators
Transistor Output
The M4N25 device consists of a gallium arsenide infrared emitting diode
optically coupled to a silicon NPN phototransistor detector.
Most Economical Optoisolator Choice for Medium Speed, Switching Applications
Meets or Exceeds All JEDEC Registered Specifications
Applications
General Purpose Switching Circuits
Interfacing and coupling systems of different potentials and impedances
I/O Interfacing
Solid State Relays
MAXIMUM RATINGS
(TA = 25
C unless otherwise noted)
Rating
Symbol
Value
Unit
INPUT LED
Reverse Voltage
VR
3
Volts
Forward Current -- Continuous
IF
60
mA
LED Power Dissipation @ TA = 25
C
with Negligible Power in Output Detector
Derate above 25
C
PD
100
1.41
mW
mW/
C
OUTPUT TRANSISTOR
CollectorEmitter Voltage
VCEO
30
Volts
EmitterCollector Voltage
VECO
7
Volts
CollectorBase Voltage
VCBO
70
Volts
Collector Current -- Continuous
IC
50
mA
Detector Power Dissipation @ TA = 25
C
with Negligible Power in Input LED
Derate above 25
C
PD
150
1.76
mW
mW/
C
TOTAL DEVICE
Isolation Surge Voltage(1)
(Peak ac Voltage, 60 Hz, 1 sec Duration)
VISO
7500
Vac(pk)
Total Device Power Dissipation @ TA = 25
C
Derate above 25
C
PD
250
2.94
mW
mW/
C
Ambient Operating Temperature Range(2)
TA
55 to +100
C
Storage Temperature Range(2)
Tstg
55 to +150
C
Soldering Temperature (10 sec, 1/16
from case)
TL
260
C
1. Isolation surge voltage is an internal device dielectric breakdown rating.
1.
For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.
2. Refer to Quality and Reliability Section in Opto Data Book for information on test conditions.
Order this document
by M4N25/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
M4N25
SCHEMATIC
PIN 1. LED ANODE
2. LED CATHODE
3. N.C.
4. EMITTER
5. COLLECTOR
6. BASE
1
2
3
6
5
4
STANDARD THRU HOLE
STYLE 1 PLASTIC
1
6
Motorola, Inc. 1997
M4N25
2
Motorola Optoelectronics Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25
C unless otherwise noted)(1)
Characteristic
Symbol
Min
Typ(1)
Max
Unit
INPUT LED
Forward Voltage (IF = 10 mA)
TA = 25
C
TA = 55
C
TA = 100
C
VF
--
--
--
1.15
1.3
1.05
1.5
--
--
Volts
Reverse Leakage Current (VR = 3 V)
IR
--
--
100
A
Capacitance (V = 0 V, f = 1 MHz)
CJ
--
18
--
pF
OUTPUT TRANSISTOR
CollectorEmitter Dark Current
(VCE = 10 V, TA = 25
C)
ICEO
--
1
50
nA
(VCE = 10 V, TA = 100
C)
ICEO
--
1
--
A
CollectorBase Dark Current (VCB = 10 V)
ICBO
--
0.2
--
nA
CollectorEmitter Breakdown Voltage (IC = 1 mA)
V(BR)CEO
30
45
--
Volts
CollectorBase Breakdown Voltage (IC = 100
A)
V(BR)CBO
70
100
--
Volts
EmitterCollector Breakdown Voltage (IE = 100
A)
V(BR)ECO
7
7.8
--
Volts
CollectorEmitter Capacitance (f = 1 MHz, VCE = 0)
CCE
--
7
--
pF
CollectorBase Capacitance (f = 1 MHz, VCB = 0)
CCB
--
19
--
pF
EmitterBase Capacitance (f = 1 MHz, VEB = 0)
CEB
--
9
--
pF
COUPLED
Output Collector Current (IF = 10 mA, VCE = 10 V)
IC (CTR)(2)
2 (20)
7 (70)
--
mA (%)
CollectorEmitter Saturation Voltage (IC = 2 mA, IF = 50 mA)
VCE(sat)
--
0.15
0.5
Volts
TurnOn Time (IF = 10 mA, VCC = 10 V, RL = 100
)(3)
ton
--
2.8
--
s
TurnOff Time (IF = 10 mA, VCC = 10 V, RL = 100
)(3)
toff
--
4.5
--
s
Rise Time (IF = 10 mA, VCC = 10 V, RL = 100
)(3)
tr
--
2
--
s
Fall Time (IF = 10 mA, VCC = 10 V, RL = 100
)(3)
tf
--
2
--
s
Isolation Voltage (f = 60 Hz, t = 1 sec)(4)
VISO
7500
--
--
Vac(pk)
Isolation Resistance (V = 500 V)(4)
RISO
1011
--
--
Isolation Capacitance (V = 0 V, f = 1 MHz)(4)
CISO
--
0.2
--
pF
1. Always design to the specified minimum/maximum electrical limits (where applicable).
2. Current Transfer Ratio (CTR) = IC/IF x 100%.
3. For test circuit setup and waveforms, refer to Figure 14.
4. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.
M4N25
3
Motorola Optoelectronics Device Data
Figure 1. Forward Voltage vs. Forward Current
Figure 2. Normalized NonSaturated and
Saturated CTR, TA = 25
C vs. LED Current
Figure 3. Normalized NonSaturated and Saturated
CTR, TA = 50
C vs. LED Current
Figure 4. Normalized NonSaturated and Saturated
CTR, TA = 70
C vs. LED Current
Figure 5. Normalized NonSaturated and Saturated
CTR, TA = 85
C vs. LED Current
10
100
0.1
IF, FORWARD CURRENT (mA)
1.4
1.3
1.1
1.2
1.0
IF, LED CURRENT (mA)
10
100
0
1.0
0
V
F
, FOR
W
ARD
VOL
T
AGE
(V)
NCTR, NORMALIZED CTR
0.9
0.8
0.7
1.0
1.0
0.5
1.5
TA = 55
C
TA = 25
C
TA = 85
C
NORMALIZED TO:
VCE = 10 V
IF = 10 mA
TA = 25
C
CTRCE(sat) VCE = 0.4 V
TA = 25
C
NCTR
NCTR(sat)
10
100
0.1
IF, LED CURRENT (mA)
1.5
1.0
0.5
NCTR, NORMALIZED CTR
0
1.0
NORMALIZED TO:
VCE = 10 V
IF = 10 mA
TA = 25
C
CTRCE(sat) VCE = 0.4 V
NCTR
NCTR(sat)
TA = 85
C
10
100
0.1
IF, LED CURRENT (mA)
1.5
1.0
0.5
NCTR, NORMALIZED CTR
0
1.0
NORMALIZED TO:
VCE = 10 V
IF = 10 mA
TA = 25
C
CTRCE(sat) VCE = 0.4 V
NCTR
NCTR(sat)
TA = 50
C
10
100
0.1
IF, LED CURRENT (mA)
1.5
1.0
0.5
NCTR, NORMALIZED CTR
0
1.0
NORMALIZED TO:
VCE = 10 V
IF = 10 mA
TA = 25
C
CTRCE(sat) VCE = 0.4 V
NCTR
NCTR(sat)
TA = 70
C
M4N25
4
Motorola Optoelectronics Device Data
Figure 6. CollectorEmitter Current
vs. Temperature and LED Current
Figure 7. CollectorEmitter Leakage
Current vs. Temperature
Figure 8. Normalized CTRcb vs. LED
Current and Temperature
Figure 9. Normalized Photocurrent vs.
lF and Temperature
Figure 10. Normalized NonSaturated HFE vs. Base
Current and Temperature
IF, LED CURRENT (mA)
10
0
35
20
15
10
5.0
0
20
I CE
, COLLECT
OR
CURRENT
(mA)
30
40
50
60
30
25
25
C
50
C
70
C
85
C
0
40
20
TA, AMBIENT TEMPERATURE (
C)
105
102
101
100
101
102
20
, COLLECT
OREMITTER
(nA)
I CEO
60
100
80
103
104
VCE = 10 V
TYPICAL
10
100
0.1
IF, LED CURRENT (mA)
1.5
1.0
0.5
NCTR
0
1.0
, NORMALIZED CTR
CB
CB
25
C
50
C
70
C
NORMALIZED TO:
IF = 10 mA
VCB = 9.3 V
TA = 25
C
10
100
0.1
IF, LED CURRENT (mA)
10
1.0
0.1
NORMALIZED PHOT
OCURRENT
0.01
1.0
NORMALIZED TO:
IF = 10 mA
TA = 25
C
25
C
50
C
70
C
20
C
IB, BASE CURRENT (
m
A)
100
1000
1.0
0.6
0.4
NH
10
0.8
1.0
1.2
, NORMALIZED H
FE
FE
NORMALIZED TO:
VCE = 10 V
IB = 20
m
A
TA = 25
C
25
C
50
C
70
C
20
C
M4N25
5
Motorola Optoelectronics Device Data
Figure 11. Normalized HFE vs. Base Current
and Temperature
Figure 12. Propagation Delay vs. Collector
Load Resistor
Figure 13. Switching Timing
Figure 14. Switching Schematic
100
1000
1.0
IB, BASE CURRENT (
m
A)
1.5
1.0
0.5
0
NH
10
, NORMALIZED SA
TURA
TED H
FE(sat)
FE
NORMALIZED TO:
VCE = 10 V
IB = 20
m
A
TA = 25
C
25
C
50
C
70
C
20
C
VCE = 0.4 V
RL, COLLECTOR LOAD RESISTOR (K
W
)
1.0
0.1
1000
100
10
1.0
tp
LH
,
PROP
AGA
TION
DELA
Y
( s)
10
100
m
tpLH
tpHL
tp
HL
,
PROP
AGA
TION
DELA
Y
( s)
m
2.5
2.0
1.5
1.0
TA = 25
C
IF = 10 mA
VCC = 5.0 V
VTH = 1.5 V
IF
VO
tPHL
tS
tF
VTH = 1.5 V
tPLH
tR
tD
RL
VO
VCC = 5.0 V
F = 10 KHz
DF = 50%
IF = 10 mA
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