363
Motorola Thyristor Device Data
Triacs
Silicon Bidirectional Thyristors
. . . designed primarily for full-wave ac control applications, such as solid-state relays,
motor controls, heating controls and power supplies; or wherever full-wave silicon
gate controlled solid-state devices are needed. Triac type thyristors switch from a
blocking to a conducting state for either polarity of applied anode voltage with positive
or negative gate triggering.
Blocking Voltage to 800 Volts
All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity
and Stability
Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat
Dissipation and Durability
Gate Triggering Guaranteed in Three Modes (MAC15FP Series) or Four Modes
(MAC15AFP Series)
MAXIMUM RATINGS
(TJ = 25
C unless otherwise noted.)
Rating
Symbol
Value
Unit
Repetitive Peak Off-State Voltage(1) (TJ = 40 to +125
C,
1/2 Sine Wave 50 to 60 Hz, Gate Open)
MAC15-4FP, MAC15A4FP
MAC15-6FP, MAC15A6FP
MAC15-8FP, MAC15A8FP
MAC15-10FP, MAC15A10FP
VDRM
200
400
600
800
Volts
On-State RMS Current (TC = +80
C)(2)
Full Cycle Sine Wave 50 to 60 Hz (TC = +95
C)
IT(RMS)
15
12
Amps
Peak Nonrepetitive Surge Current (One Full Cycle, 60 Hz, TC = +80
C)
preceded and followed by rated current
ITSM
150
Amps
Peak Gate Power (TC = +80
C, Pulse Width = 2
s)
PGM
20
Watts
Average Gate Power (TC = +80
C, t = 8.3 ms)
PG(AV)
0.5
Watt
Peak Gate Current
IGM
2
Amps
Peak Gate Voltage
VGM
10
Volts
RMS Isolation Voltage (TA = 25
C, Relative Humidity
p
20%)
V(ISO)
1500
Volts
Operating Junction Temperature
TJ
40 to +125
C
Storage Temperature Range
Tstg
40 to +150
C
1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
2. The case temperature reference point for all TC measurements is a point on the center lead of the package as close as possible to the plastic
body.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MAC15FP
Series
MAC15AFP
Series
CASE 221C-02
STYLE 3
ISOLATED TRIACs
THYRISTORS
15 AMPERES RMS
200 thru 800 VOLTS
MT1
G
MT2
MAC15FP Series MAC15AFP Series
364
Motorola Thyristor Device Data
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
JC
2
C/W
Thermal Resistance, Case to Sink
R
CS
2.2 (typ)
C/W
Thermal Resistance, Junction to Ambient
R
JA
60
C/W
ELECTRICAL CHARACTERISTICS
(TC = 25
C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
Peak Blocking Current (Either Direction) TJ = 25
C
(VD = Rated VDRM, TJ = 125
C, Gate Open)
IDRM
--
--
--
--
10
2
A
mA
Peak On-State Voltage (Either Direction)
(ITM = 21 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle
p
2%)
VTM
--
1.3
1.6
Volts
Gate Trigger Current (Continuous dc)
(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms)
MT2(+), G(+)
MT2(+), G()
MT2(), G()
MT2(), G(+) "A" SUFFIX ONLY
IGT
--
--
--
--
--
--
--
--
50
50
50
75
mA
Gate Trigger Voltage (Continuous dc)
(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms)
MT2(+), G(+)
MT2(+), G()
MT2(), G()
MT2(), G(+) "A" SUFFIX ONLY
(Main Terminal Voltage = Rated VDRM, RL = 10 k
, TJ = +110
C)
MT2(+), G(+); MT2(), G(); MT2(+), G()
MT2(), G(+) "A" SUFFIX ONLY
VGT
--
--
--
--
0.2
0.2
0.9
0.9
1.1
1.4
--
--
2
2
2
2.5
--
--
Volts
Holding Current (Either Direction)
(Main Terminal Voltage = 12 Vdc, Gate Open,
Initiating Current = 200 mA)
IH
--
6
40
mA
Turn-On Time
(VD = Rated VDRM, ITM = 17 A, IGT = 120 mA,
Rise Time = 0.1
s, Pulse Width = 2
s)
tgt
--
1.5
--
s
Critical Rate of Rise of Commutation Voltage
(VD = Rated VDRM, ITM = 21 A, Commutating di/dt = 7.6 A/ms,
Gate Unenergized, TC = 80
C)
dv/dt(c)
--
5
--
V/
s
QUADRANT DEFINITIONS
QUADRANT II
QUADRANT I
QUADRANT III
QUADRANT IV
MT2(+)
MT2()
MT2(+), G()
MT2(+), G(+)
MT2(), G()
MT2(), G(+)
G()
G(+)
Trigger devices are recommended for gating on Triacs. They provide:
1. Consistent predictable turn-on points.
2. Simplified circuitry.
3. Fast turn-on time for cooler, more efficient and reliable operation.
ELECTRICAL CHARACTERISTICS of RECOMMENDED
BIDIRECTIONAL SWITCHES
Usage
General
Part Number
MBS4991
MBS4992
VS
610 V
7.59 V
IS
350
A Max
120
A Max
VS1VS2
0.5 V Max
0.2 V Max
Temperature
Coefficient
0.02%/
C Typ
1. Ratings apply for open gate conditions. Thyristor devices shall not be tested with a constant current source for blocking capability such that the
voltage applied exceeds the rated blocking voltage.
MAC15FP Series MAC15AFP Series
365
Motorola Thyristor Device Data
T
, CASE
TEMPERA
TURE ( C)
C
GTMV , GA
TE
TRIGGER VOL
T
AGE (NORMALIZED)
Figure 4. Typical Gate Trigger Current
Figure 1. RMS Current Derating
Figure 3. Typical Gate Trigger Voltage
Figure 2. On-State Power Dissipation
Figure 5. Maximum On-State Characteristics
130
120
100
80
90
110
14
0
2
4
6
8
12
10
16
dc
30
60
90
= CONDUCTION ANGLE
125
C
150
to 180
TJ = 125
C
= CONDUCTION ANGLE
= 180
30
60
90
120
dc
16
20
8
12
4
0
14
0
2
4
6
8
12
10
16
IT(RMS), RMS ON-STATE CURRENT (AMP)
IT(RMS), RMS ON-STATE CURRENT (AMP)
60
120
40
0
20
20
40
60
80
100
140
OFF-STATE VOLTAGE = 12 Vdc
ALL MODES
0.7
0.5
0.3
3
2
1
60
120
40
0
20
20
40
60
80
100
140
TJ, JUNCTION TEMPERATURE (
C)
0.7
0.5
0.3
3
2
1
OFF-STATE VOLTAGE = 12 Vdc
ALL MODES
1
30
2
3
5
7
10
20
50
70
100
0.1
0.7
0.5
0.3
0.2
TJ = 25
C
125
C
4
0.4
0.8
1.2
1.6
2
2.4
2.8
3.6
3.2
4.4
vT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
TJ, JUNCTION TEMPERATURE (
C)
I , , GA
TE
TRIGGER CURRENT
(NORMALIZED)
GTM
D(A
V)
P
,
A
VERAGE POWER DISSIP
A
TION (W
A
TTS)
F
i , INST
ANT
ANEOUS FOR
W
ARD CURRENT
(AMP)
TYPICAL CHARACTERISTICS
MAC15FP Series MAC15AFP Series
366
Motorola Thyristor Device Data
NUMBER OF CYCLES
10
3
7
2
5
Figure 6. Typical Holding Current
Figure 8. Thermal Response
1
Figure 7. Maximum Nonrepetitive Surge Current
60
120
40
0
20
20
40
60
80
100
140
TJ, JUNCTION TEMPERATURE (
C)
0.7
0.5
0.3
3
2
1
GATE OPEN
APPLIES TO EITHER DIRECTION
0.1
5 k
2 k
1 k
500
200
100
50
20
10
10 k
Z
JC(t) = r(t)
R
JC
t, TIME (ms)
1
0.2
0.5
5
0.02
0.1
0.01
2
1
0.5
0.2
0.05
r(t),
TRANSIENT
THERMAL
RESIST
ANCE
(NORMALIZED)
TC = 80
C
f = 60 Hz
300
200
100
70
50
30
I , HOLDING CURRENT
(NORMALIZED)
H
I , PEAK SURGE CURRENT
(AMP)
TSM
SURGE IS PRECEDED AND FOLLOWED BY RATED CURRENT
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