1
Motorola Thyristor Device Data
Triacs
Silicon Bidirectional Triode Thyristors
. . . designed primarily for full-wave ac control applications, such as lighting systems,
heater controls, motor controls and power supplies; or wherever full-wave silicon-
gate-controlled devices are needed.
Off-State Voltages to 800 Volts
All Diffused and Glass Passivated Junctions for Parameter Uniformity and Stability
Small, Rugged Thermowatt Construction for Thermal Resistance and High Heat
Dissipation
Gate Triggering Guaranteed in Three Modes (MAC223FP Series) or
Four Modes (MAC223AFP Series)
MAXIMUM RATINGS
(TJ = 25
unless otherwise noted.)
Rating
Symbol
Value
Unit
Peak Repetitive Off-State Voltage(1) (TJ = 40 to +125
C,
1/2 Sine Wave 50 to 60 Hz, Gate Open)
MAC223-4FP, MAC223A4FP
MAC223-6FP, MAC223A6FP
MAC223-8FP, MAC223A8FP
MAC223-10FP, MAC223A10FP
VDRM
200
400
600
800
Volts
On-State RMS Current (TC = +80
C) Full Cycle Sine Wave 50 to 60 Hz(2)
IT(RMS)
25
Amps
Peak Nonrepetitive Surge Current (One Full Cycle, 60 Hz, TC = 80
C,
preceded and followed by rated current)
ITSM
250
Amps
Circuit Fusing (t = 8.3 ms)
I2t
260
A2s
Peak Gate Power (t
p
2
s)
PGM
20
Watts
Average Gate Power (TC = +80
C, t
p
8.3 ms)
PG(AV)
0.5
Watt
Peak Gate Current (t
p
2
s)
IGM
2
Amps
Peak Gate Voltage (t
p
2
s)
VGM
10
Volts
RMS Isolation Voltage (TA = 25
C, Relative Humidity
p
20%)
V(ISO)
1500
Volts
Operating Junction Temperature
TJ
40 to +125
C
Storage Temperature Range
Tstg
40 to +150
C
Mounting Torque
--
8
in. lb.
1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
2. The case temperature reference point for all TC measurements is a point on the center lead of the package as close as possible to the plastic
body.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
JC
1.2
C/W
Thermal Resistance, Case to Sink
R
CS
2.2
C/W
Thermal Resistance, Junction to Ambient
R
JA
60
C/W
Order this document
by MAC223FP/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Motorola, Inc. 1995
MAC223FP
Series
MAC223AFP
Series
CASE 221C-02
STYLE 3
ISOLATED TRIACs
THYRISTORS
25 AMPERES RMS
200 thru 800 VOLTS
MT1
G
MT2
MAC223FP Series MAC223AFP Series
2
Motorola Thyristor Device Data
ELECTRICAL CHARACTERISTICS
(TC = 25
C and either polarity of MT2 to MT1 voltage unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
Peak Blocking Current(1)
TJ = 25
C
(VD = Rated VDRM, Gate Open)
TJ = 125
C
IDRM
--
--
--
--
10
2
A
mA
Peak On-State Voltage
(ITM = 35 A Peak, Pulse Width
p
2 ms, Duty Cycle
p
2%)
VTM
--
1.4
1.85
Volts
Gate Trigger Current (Continuous dc)
(VD = 12 V, RL = 100
)
MT2(+), G(+); MT2(), G(); MT2(+), G()
MT2(), G(+) "A" SUFFIX ONLY
IGT
--
--
20
30
50
75
mA
Gate Trigger Voltage (Continuous dc)
(VD = 12 V, RL = 100
)
MT2(+), G(+); MT2(), G(); MT(+), G()
MT2(), G(+) "A" SUFFIX ONLY
(VD = Rated VDRM, TJ = 125
C, RL = 10 k)
MT(+), G(+); MT2(), G(); MT2(+), G()
MT2(), G(+) "A" SUFFIX ONLY
VGT
--
--
0.2
0.2
1.1
1.3
0.4
0.4
2
2.5
--
--
Volts
Holding Current
(VD = 12 V, ITM = 200 mA, Gate Open)
IH
--
10
50
mA
Gate Controlled Turn-On Time
(VD = Rated VDRM, ITM = 35 A Peak, IG = 200 mA)
tgt
--
1.5
--
s
Critical Rate of Rise of Off-State Voltage
(VD = Rated VDRM, Exponential Waveform, TC = 125
C)
dv/dt
--
40
--
V/
s
Critical Rate of Rise of Commutation Voltage
(VD = Rated VDRM, ITM = 35 A Peak, Commutating
di/dt = 12.6 A/ms, Gate Unenergized, TC = 80
C)
dv/dt(c)
--
5
--
V/
s
1. Ratings apply for open gate conditions. Devices shall not be tested with a constant current source for blocking voltage such that the voltage
applied exceeds the rated blocking voltage.
T
, MAXIMUM
ALLOW
ABLE CASE
TEMPERA
TURE ( C)
C
Figure 2. On-State Power Dissipation
Figure 1. RMS Current Derating
75
95
IT(RMS), RMS ON-STATE CURRENT (AMPS)
25
20
5
125
115
85
10
0
15
105
10
0
0
25
20
40
30
20
10
5
15
IT(RMS), RMS ON-STATE CURRENT (AMPS)
P
,
A
VERAGE POWER DISSIP
A
TION (W
A
TTS)
D(A
V)
MAC223FP Series MAC223AFP Series
3
Motorola Thyristor Device Data
Figure 3. Gate Trigger Current
Figure 4. Gate Trigger Voltage
Figure 6. Typical On-State Characteristics
Figure 5. Hold Current
60
120
40
0
20
20
40
60
80
100
140
TJ, JUNCTION TEMPERATURE (
C)
3
2
1
0.5
0.3
0.2
0.1
VD = 12 V
RL = 100
vTM, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
1
0.5
0.1
5
10
50
100
200
0
1
2
3
4
TJ = 25
C
ITM = 200 mA
GATE OPEN
NORMALIZED GA
TE VOL
T
AGE
NORMALIZED GA
TE CURRENT
NORMALIZED HOLD CURRENT
TMi , INST
ANT
ANEOUS ON-ST
A
TE CURRENT
(AMPS)
60
120
40
0
20
20
40
60
80
100
140
TJ, JUNCTION TEMPERATURE (
C)
2
1
0.5
0.3
0.2
0.1
60
120
40
0
20
20
40
60
80
100
140
TJ, JUNCTION TEMPERATURE (
C)
3
2
1
0.5
0.3
0.2
0.1
VD = 12 V
RL = 100
TYPICAL CHARACTERISTICS
MAC223FP Series MAC223AFP Series
4
Motorola Thyristor Device Data
PACKAGE DIMENSIONS
CASE 221C-02
1 2 3
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. LEAD DIMENSIONS UNCONTROLLED WITHIN
DIMENSION Z.
STYLE 3:
PIN 1. MT 1
2. MT 2
3. GATE
Y
B
T
Q
P
A
K
H
Z
G
L
F
D
3 PL
M
B
M
0.25 (0.010)
Y
E
N
S
J
R
C
SEATING
PLANE
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.680
0.700
17.28
17.78
B
0.388
0.408
9.86
10.36
C
0.175
0.195
4.45
4.95
D
0.025
0.040
0.64
1.01
E
0.340
0.355
8.64
9.01
F
0.140
0.150
3.56
3.81
G
0.100 BSC
2.54 BSC
H
0.110
0.155
2.80
3.93
J
0.018
0.028
0.46
0.71
K
0.500
0.550
12.70
13.97
L
0.045
0.070
1.15
1.77
N
0.049
1.25
P
0.270
0.290
6.86
7.36
Q
0.480
0.500
12.20
12.70
R
0.090
0.120
2.29
3.04
S
0.105
0.115
2.67
2.92
Z
0.070
0.090
1.78
2.28
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different
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MAC223FP/D
*MAC223FP/D*
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